公开(公告)号：US20160343662A1

公开(公告)日：2016-11-24

申请号：US15223851

申请日：2016-07-29

Applicant: Infineon Technologies AG

Inventor： Thomas Fischer ,  Juergen Foerster ,  Werner Robl ,  Andreas Stueckjuergen

IPC: H01L23/535 ,  H01L21/306

CPC classification number: H01L23/535 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/76838 ,  H01L21/76885 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/05 ,  H01L2221/1078 ,  H01L2224/03614 ,  H01L2224/03622 ,  H01L2224/05166 ,  H01L2224/05186 ,  H01L2224/05193 ,  H01L2224/05647 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00

Abstract: One or more embodiments relate to a method for making a semiconductor structure, comprising: providing a workpiece; forming a barrier layer over the workpiece; forming a separation layer over the barrier layer; forming a conductive layer over the separation layer; and wet etching the conductive layer.

Abstract translation: 一个或多个实施例涉及制造半导体结构的方法，包括：提供工件; 在工件上形成阻挡层; 在阻挡层上形成分离层; 在分离层上形成导电层; 并湿式蚀刻导电层。