摘要:
A CHF.sub.3 -based RIE etching process is disclosed using a nitrogen additive to provide high selectivity of SiO.sub.2 or PSG to Al.sub.2 O.sub.3, low chamfering of a photoresist mask, and low RIE lag. The process uses a pressure in the range of about 200-1,000 mTorr, and an appropriate RF bias power, selected based on the size of the substrate being etched. The substrate mounting pedestal is preferably maintained at a temperature of about 0.degree. C. Nitrogen can be provided from a nitrogen-containing molecule, or as N.sub.2. He gas can be added to the gas mixture to enhance the RIE lag-reducing effect of the nitrogen.
摘要翻译:使用氮添加剂公开了基于CHF 3的RIE蚀刻工艺,以提供SiO 2或PSG对Al 2 O 3的高选择性,光刻胶掩模的低倒角和低RIE滞后。 该方法使用约200-1,000mTorr范围内的压力和基于被蚀刻的基底的尺寸选择的适当的RF偏置功率。 衬底安装基座优选保持在约0℃的温度。氮可以由含氮分子或N 2提供。 可以将气体加入到气体混合物中,以提高氮气的RIE滞后效应。
摘要:
An infrared television camera (20) monitors the etching of a substrate (26) in-situ in an etch chamber (24). Temporal and spatial resolution of IR emissions is obtained by monitoring the top surface of the substrate (26) in two-dimensions throughout the course of the etching process. Anomalies in temperature detected on the top surface of the substrate (26) can indicate defects in the substrate (26) itself or in the operation of the etching apparatus. Process feedback control is achieved by adjusting various parameters of the etching apparatus (i.e., gas-pressure, flow pattern, magnetic field, coolant flow to electrode, or the like) to compensate for etching anomalies. Etch uniformity and etch endpoint monitoring is achieved by monitoring the IR emissions resulting from exothermic reaction of the film being etched. IR emissions decline at the end of an exothermic etch reaction. Particulate matter which might otherwise harm the substrate (26) can be identified in the gas-phase with a second IR television camera (34) which images the region above the substrate (26). Particulate matter appears as localized "hot spots" within the gas plasma, and the identification of particulate matter allows corrective measures to be taken.
摘要:
A process for inducing photochemical reactions using laser radiation employs a dielectric waveguide cell formed by a capillary passage communicating at its ends with a gas inlet chamber and a gas outlet chamber, each chamber being configured to encompass a cone of laser radiation focussed onto, or diverging from, the respective end of the capillary passage. The passage is configured to propagate the laser radiation therealong in one or more selected waveguide modes, thus defining an extended region of high fluence.
摘要:
A process for inducing photochemical reactions using laser radiation employs a dielectric waveguide cell formed by a capillary passage communicating at its ends with a gas inlet chamber and a gas outlet chamber, each chamber being configured to encompass a cone of laser radiation focussed onto, or diverging from, the respective end of the capillary passage. The passage is configured to propagate the laser radiation therealong in one or more selected waveguide modes, thus defining an extended region of high fluence.
摘要:
A method is described and claimed for the replenishment of deuterium or tritium concentration in a laser isotope separation process for the production of D.sub.2 O, or for the recovery of tritium from contaminated D.sub.2 O or H.sub.2 O. A working compound is selectively photodissociated by a laser beam and is replenished by contacting an exchange liquid in a countercurrent fashion in a first contacting column. The exchange liquid is replenished with isotope by in turn being contacted with a feed stream in a second contacting apparatus. This second contacting apparatus may be a gas/liquid or liquid/liquid contacting apparatus and the countercurrent flows therein may be about equal or unequal.