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15 条记录 (耗时 0.047 秒)

    Gettering of particles during plasma processing
    2.
    发明授权
    Gettering of particles during plasma processing 失效
    在等离子体处理期间吸收颗粒

    公开(公告)号：US5433258A

    公开(公告)日：1995-07-18

    申请号：US191894

    申请日：1994-02-04

    申请人： Michael S. Barnes ,  Dennis K. Coultas ,  John C. Forster ,  John H. Keller ,  James A. O'Neill

    发明人： Michael S. Barnes ,  Dennis K. Coultas ,  John C. Forster ,  John H. Keller ,  James A. O'Neill

    IPC分类号： C23C14/00 ,  C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  C23C16/30 ,  C23C14/34 ,  C23C16/50 ,  H05H1/00

    CPC分类号： H01J37/32431 ,  H01J2237/022 ,  H01J2237/028

    摘要： Apparatus and methods for plasma processing involving the gettering of particles having a high charge to mass ratio away from a semiconductor wafer are disclosed. In one aspect of the invention, magnets are used to produce a magnetic field which is transverse to an electric field to draw the negative particles away from the wafer to prevent the formation of a sheath which can trap the particles. In a second aspect of the invention, a power source is connected to the wafer electrode to maintain a negative charge on the wafer, thereby preventing negative particles from being drawn to the wafer surface when the plasma is turned off. In other embodiments of the invention, a low density plasma source is used to produce a large plasma sheath which permits particles to cross a chamber to be gettered. A low density plasma discharge followed by a pulse to a higher density is used to overcome the negative effect of an insulating layer between the wafer and the wafer electrode.

    摘要翻译： 公开了用于等离子体处理的装置和方法，其涉及吸收远离半导体晶片的高电荷质量比的颗粒。 在本发明的一个方面，磁体用于产生横向于电场的磁场，以将负极微粒从晶片上拉出以防止形成能够捕获颗粒的护套。 在本发明的第二方面中，电源连接到晶片电极以在晶片上保持负电荷，从而防止当等离子体截止时负极被吸引到晶片表面。 在本发明的其它实施例中，使用低密度等离子体源来产生允许颗粒穿过室的大等离子体鞘。 使用低密度等离子体放电，随后是脉冲到较高密度，以克服晶片和晶片电极之间的绝缘层的负面影响。

    Apparatus for gettering of particles during plasma processing
    3.
    发明授权
    Apparatus for gettering of particles during plasma processing 失效
    用于在等离子体处理期间吸除颗粒的装置

    公开(公告)号：US5332441A

    公开(公告)日：1994-07-26

    申请号：US785628

    申请日：1991-10-31

    申请人： Michael S. Barnes ,  Dennis K. Coultas ,  John C. Forster ,  John H. Keller ,  James A. O'Neill

    发明人： Michael S. Barnes ,  Dennis K. Coultas ,  John C. Forster ,  John H. Keller ,  James A. O'Neill

    IPC分类号： C23C14/00 ,  C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  C23C16/00 ,  B05C5/00

    CPC分类号： H01J37/32431 ,  H01J2237/022 ,  H01J2237/028

    摘要： Apparatus for plasma processing involving the gettering of particles having a high charge to mass ratio away from a semiconductor wafer are disclosed. In one aspect of the invention, magnets are used to produce a magnetic field which is transverse to an electric field to draw the negative particles away from the wafer to prevent the formation of a sheath which can trap the particles. In a second aspect of the invention, a power source is connected to the wafer electrode to maintain a negative charge on the wafer, thereby preventing negative particles from being drawn to the wafer surface when the plasma is turned off. In other embodiments of the invention, a low density plasma source is used to produce a large plasma sheath which permits particles to cross a chamber to be gettered. A low density plasma discharge followed by a pulse to a higher density is used to overcome the negative effect of an insulating layer between the wafer and the wafer electrode.

    摘要翻译： 公开了一种用于等离子体处理的装置，其涉及吸收远离半导体晶片的高电荷质量比的颗粒。 在本发明的一个方面，磁体用于产生横向于电场的磁场，以将负极微粒从晶片上拉出以防止形成能够捕获颗粒的护套。 在本发明的第二方面中，电源连接到晶片电极以在晶片上保持负电荷，从而防止当等离子体截止时负极被吸引到晶片表面。 在本发明的其它实施例中，使用低密度等离子体源来产生允许颗粒穿过室的大等离子体鞘。 使用低密度等离子体放电，随后是脉冲到较高密度，以克服晶片和晶片电极之间的绝缘层的负面影响。

    OFFLOAD COMPUTING PROTOCOL
    5.
    发明申请
    OFFLOAD COMPUTING PROTOCOL 审中-公开

    公开(公告)号：US20180165131A1

    公开(公告)日：2018-06-14

    申请号：US15375940

    申请日：2016-12-12

    申请人： Fearghal O'Hare ,  Michael Nolan ,  James A. O'Neill

    发明人： Fearghal O'Hare ,  Michael Nolan ,  James A. O'Neill

    IPC分类号： G06F9/50 ,  H04L12/24 ,  H04W4/00 ,  G06F9/455

    摘要： Systems and methods for are provided for offloading computing tasks from constrained devices. An example apparatus includes an offload computing protocol (OCP) enabled device. The OCP enabled device includes OCP extensions to the operating system to enable the offloading of computing tasks. A proximity locator may use a radio transceiver to locate an OCP device that can accept a computing task. The OCP enabled device may include an OCP bundle comprising code and data, wherein the OCP bundle is to be sent to the OCP device.

    Method and apparatus for optical emission end point detection in plasma etching processes
    8.
    发明授权
    Method and apparatus for optical emission end point detection in plasma etching processes 失效
    等离子体蚀刻工艺中的光发射端点检测方法和装置

    公开(公告)号：US5308414A

    公开(公告)日：1994-05-03

    申请号：US995727

    申请日：1992-12-23

    申请人： James A. O'Neill ,  Michael L. Passow ,  Jyothi Singh

    发明人： James A. O'Neill ,  Michael L. Passow ,  Jyothi Singh

    IPC分类号： G01J3/00 ,  G01J3/443 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/00 ,  H05H1/46 ,  G01N21/00

    CPC分类号： H01J37/32935

    摘要： An apparatus and method for determining the time at which a plasma etching process should be terminated. The process generates at least one etch product species and a continuum plasma emission. The apparatus monitors the optical emission intensity of the plasma in a narrow band centered about a predetermined spectral line and generates a first signal indicative of the spectral intensity of the etch product species. The apparatus further monitors the optical emission intensity of the plasma in a wide band and generates a second signal indicative of the spectral intensity of the continuum plasma emission. The apparatus further monitors the magnitudes of the first and second signals and generates a termination signal when the magnitudes diverge.

    摘要翻译： 一种用于确定等离子体蚀刻工艺应终止的时间的装置和方法。 该方法产生至少一种蚀刻产物物质和连续体等离子体发射。 该装置以围绕预定光谱线为中心的窄带监测等离子体的光发射强度，并产生指示蚀刻产物种类的光谱强度的第一信号。 该装置进一步监测宽带中的等离子体的光发射强度，并产生指示连续体等离子体发射的光谱强度的第二信号。 该装置还监视第一和第二信号的幅度，并且当幅度发散时产生终止信号。

    Aluminum oxide LPCVD system
    9.
    发明授权
    Aluminum oxide LPCVD system 失效
    氧化铝LPCVD系统

    公开(公告)号：US5540777A

    公开(公告)日：1996-07-30

    申请号：US541284

    申请日：1995-10-12

    申请人： Steven G. Barbee ,  Jonathan D. Chapple-Sokol ,  Richard A. Conti ,  Richard Hsiao ,  James A. O'Neill ,  Narayana V. Sarma ,  Donald L. Wilson ,  Justin W.-C. Wong ,  Steven P. Zuhoski

    发明人： Steven G. Barbee ,  Jonathan D. Chapple-Sokol ,  Richard A. Conti ,  Richard Hsiao ,  James A. O'Neill ,  Narayana V. Sarma ,  Donald L. Wilson ,  Justin W.-C. Wong ,  Steven P. Zuhoski

    IPC分类号： C23C16/40 ,  C23C16/448 ,  C23C16/52 ,  H01L21/205 ,  H01L21/31 ,  H01L21/316 ,  C23C16/00

    CPC分类号： C23C16/403 ,  C23C16/4481 ,  C23C16/52

    摘要： A process and apparatus for Al.sub.2 O.sub.3 CVD on silicon wafers using aluminum tri-isopropoxide in a high-volume production environment is presented. The conditions required to use ATI in a production environment and provide maximum utilization of ATI are first of all delivery of ATI via direct evaporation. The ATI source bottle is pumped out (bypassing substrates) until propene and isopropanol signals are reduced to 1% of process pressure before start of aluminum oxide deposition. Either IR spectroscopy or mass spectrometry can be used to provide a control signal to the microprocessor controller. Heating the supplied tetramer to 120.degree. C. for two hours assures complete conversion to trimer. The ATI is stored at 90.degree. C. to minimize decomposition during idle periods and allow recovery of trimer upon return to 120.degree. C. for two hours. During periods of demand, the ATI is held at 120.degree. C. to minimize decomposition.

    摘要翻译： 介绍了在大批量生产环境中使用三异丙氧基铝的硅晶片上Al2O3 CVD的工艺和装置。 在生产环境中使用ATI并提供ATI的最大利用率所需的条件首先通过直接蒸发传送ATI。 在开始氧化铝沉积之前，将ATI源瓶泵出（旁路基板），直到丙烯和异丙醇信号降低到过程压力的1％。 可以使用红外光谱或质谱法向微处理器控制器提供控制信号。 将供应的四聚体加热至120℃保持两小时，确保完全转化为三聚体。 将ATI储存在90℃以使空闲期间的分解最小化，并允许在回到120℃回收三聚体两小时。 在需求期间，ATI保持在120℃以最小化分解。

    Fishing rod apparatus
    10.
    发明授权
    Fishing rod apparatus 失效
    钓鱼竿设备

    公开(公告)号：US5193298A

    公开(公告)日：1993-03-16

    申请号：US826032

    申请日：1992-01-27

    申请人： James A. O'Neill

    发明人： James A. O'Neill

    IPC分类号： A01K91/02

    CPC分类号： A01K91/02

    摘要： A fishing rod apparatus is arranged with a first and second rod tube reciprocatably mounting a plunger therethrough. The second rod tube selectively utilizes spring or pneumatic pressure to direct the rod exteriorly through a forward end portion of the first tube. The forward end portion of the first tube is arranged to position a fishing line support such as a float to direct the associated fishing line to a desired target casting position relative to the rod structure.

    摘要翻译： 钓竿装置布置有第一和第二杆管，其可往复运动地安装柱塞通过其中。 第二杆管选择性地利用弹簧或气动压力将杆引导到第一管的前端部分外部。 第一管的前端部分布置成定位钓线支撑件例如浮子，以将相关联的钓鱼线相对于杆结构引导到期望的目标铸造位置。