摘要:
A CHF.sub.3 -based RIE etching process is disclosed using a nitrogen additive to provide high selectivity of SiO.sub.2 or PSG to Al.sub.2 O.sub.3, low chamfering of a photoresist mask, and low RIE lag. The process uses a pressure in the range of about 200-1,000 mTorr, and an appropriate RF bias power, selected based on the size of the substrate being etched. The substrate mounting pedestal is preferably maintained at a temperature of about 0.degree. C. Nitrogen can be provided from a nitrogen-containing molecule, or as N.sub.2. He gas can be added to the gas mixture to enhance the RIE lag-reducing effect of the nitrogen.
摘要翻译:使用氮添加剂公开了基于CHF 3的RIE蚀刻工艺,以提供SiO 2或PSG对Al 2 O 3的高选择性,光刻胶掩模的低倒角和低RIE滞后。 该方法使用约200-1,000mTorr范围内的压力和基于被蚀刻的基底的尺寸选择的适当的RF偏置功率。 衬底安装基座优选保持在约0℃的温度。氮可以由含氮分子或N 2提供。 可以将气体加入到气体混合物中,以提高氮气的RIE滞后效应。
摘要:
A substrate is transferred from an environment at about vacuum into a load lock through a first door. The substrate is then sealed within the load lock. The pressure within the load lock is raised to a high pressure above vacuum. A second door coupling the load lock to a high-pressure processing chamber is then opened and the substrate moved from the load lock into the high-pressure chamber. The substrate is then sealed within the high-pressure chamber. High-pressure processing, such as high pressure cleaning or high pressure deposition, is then performed on the substrate within the high-pressure chamber. Subsequently, the second door is opened and the substrate transferred into the load lock. The substrate is then sealed within the load lock. The pressure within the load lock is lowered to about vacuum and the first door opened. The substrate is then removed from the load lock into the environment.
摘要:
Initially, process parameters for dense phase fluid cleaning are determined. Thereafter, a cleaning chamber containing a substrate is pressurized with a dense phase fluid, based on these process parameters. The substrate is then cleaned with the dense phase fluid, again based on these process parameters. Exhaust fluid is subsequently expelled from the cleaning chamber, and thereafter analyzed. The process parameters are then adjusted to adjusted process parameters based on the analysis of the exhaust fluid. Thereafter, the cleaning chamber is again pressurized and cleaning repeated. This pressurization and cleaning is based on the adjusted process parameters. Also, this pressurization and cleaning is repeated until the substrate is sufficiently clean.
摘要:
The present invention involves a low-temperature, photoresist-free method of fabricating a barrier layer on a flexible substrate. An embodiment involves the conversion of a precursor into a top-surface imaging layer during a direct patterning step. Preferred precursors are formed from a metal complex comprising at least one ligand selected from the group consisting of acac, carboxylato, alkoxy, azide, carbonyl, nitrato, amine, halide, nitro, and mixtures thereof and at least one metal selected from the group consisting of Li, Al, Si, Ti, V, Cr, Mn, Fe, Ni, Co, Cu, Zn, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Ba, La, Pr, Sm, Eu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Pb, Th, U, Sb, As, Ce, Mg, and mixtures thereof.
摘要:
The present invention involves fabrication of a hard mask. An embodiment involves the conversion of a precursor into a top-surface imaging layer during a direct patterning step. Another embodiment of the present invention is a method of forming an etched pattern in a substrate. A further embodiment of the present invention is a method of forming an implanted region in a substrate. Preferred precursors are formed from a metal complex comprising at least one ligand selected from the group consisting of acac, carboxylato, alkoxy, azide, carbonyl, nitrato, amine, halide, nitro, and mixtures thereof and at least one metal selected from the group consisting of Li, Al, Si, Ti, V, Cr, Mn, Fe, Ni, Co, Cu, Zn, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Ba, La, Pr, Sm, Eu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Pb, Th, U, Sb, As, Ce, Mg, and mixtures thereof.
摘要:
An aqueous metal oxide sol slurry has been developed for removal of low dielectric constant materials. The slurry is formed directly in solution utilizing non-dehydrated chemically active metal oxide sols which are formed in a colloidal suspension or dispersion. The oxide sols have not undergone any subsequent drying and the particles are believed to be substantially spherical in structure, dimensionally stable and do not change shape over time. The sol particles are mechanically soft and heavily hydrated which reduces surface damage even in the case where soft polymer or porous dielectric films are polished. The sol particles are formed of a chemically active metal oxide material, or combinations thereof, or can be coated on chemically inactive oxide material such as silicon dioxide or can be conformed therewith. The oxide sols can include a bi-modal particle distribution. The slurry can be utilized in CMP processes, with or without conditioning.
摘要:
Workpieces are loaded into a cleaning chamber. The cleaning chamber is pressurized with a first dense-phase cleaning fluid, the temperature and pressure of the first dense-phase fluid being maintained at less than about 1500 psi using a temperature control device. The workpieces are soaked in the first dense-phase fluid for a predetermined time period. After soaking, the workpieces are further cleaned by applying a second, localized, high-pressure dense-phase fluid to the surface of the workpieces.
摘要:
The present invention relates generally to a method and apparatus for converting a precursor material, preferably organometallic, to a film, preferably metal-containing, that is adherent to at least a portion of a substrate. Both method and apparatus include a pre-conversion step or section, and a step or section for substantial conversion of a portion of material from the pre-conversion step or section into the form of a predetermined pattern, wherein this substantial conversion results in a metal-containing patterned layer on the substrate.
摘要:
A process for forming a substantially glass free surface on screened refractory metallurgy areas on a ceramic substrate wherein a thin layer of Pd is deposited over the metallurgy areas and the metallurgy areas subsequently sintered causing the surface refractory metal particles to be fused into a substantially solid metallurgy layer under the catalyzing influence of the Pd.