Load lock system for supercritical fluid cleaning
    2.
    发明授权
    Load lock system for supercritical fluid cleaning 失效
    超临界流体清洗装载锁系统

    公开(公告)号:US07226512B2

    公开(公告)日:2007-06-05

    申请号:US10465906

    申请日:2003-06-18

    IPC分类号: B08B5/04

    摘要: A substrate is transferred from an environment at about vacuum into a load lock through a first door. The substrate is then sealed within the load lock. The pressure within the load lock is raised to a high pressure above vacuum. A second door coupling the load lock to a high-pressure processing chamber is then opened and the substrate moved from the load lock into the high-pressure chamber. The substrate is then sealed within the high-pressure chamber. High-pressure processing, such as high pressure cleaning or high pressure deposition, is then performed on the substrate within the high-pressure chamber. Subsequently, the second door is opened and the substrate transferred into the load lock. The substrate is then sealed within the load lock. The pressure within the load lock is lowered to about vacuum and the first door opened. The substrate is then removed from the load lock into the environment.

    摘要翻译: 将基板从大约真空的环境转移到通过第一门的加载锁定中。 然后将衬底密封在装载锁中。 负载锁中的压力升高到高于真空的高压。 然后打开将负载锁耦合到高压处理室的第二扇门,并且衬底从负载锁移动到高压室中。 然后将衬底密封在高压室内。 然后在高压室内的基板上进行高压处理,例如高压清洗或高压沉积。 随后,打开第二扇门并将基板转移到装载锁中。 然后将衬底密封在装载锁中。 负载锁中的压力降低到大约真空,第一门打开。 然后将衬底从负载锁移除到环境中。

    Automated dense phase fluid cleaning system
    3.
    发明授权
    Automated dense phase fluid cleaning system 失效
    自动密相流体清洗系统

    公开(公告)号:US06857437B2

    公开(公告)日:2005-02-22

    申请号:US10465905

    申请日:2003-06-18

    摘要: Initially, process parameters for dense phase fluid cleaning are determined. Thereafter, a cleaning chamber containing a substrate is pressurized with a dense phase fluid, based on these process parameters. The substrate is then cleaned with the dense phase fluid, again based on these process parameters. Exhaust fluid is subsequently expelled from the cleaning chamber, and thereafter analyzed. The process parameters are then adjusted to adjusted process parameters based on the analysis of the exhaust fluid. Thereafter, the cleaning chamber is again pressurized and cleaning repeated. This pressurization and cleaning is based on the adjusted process parameters. Also, this pressurization and cleaning is repeated until the substrate is sufficiently clean.

    摘要翻译: 最初,确定了密相流体清洗的工艺参数。 此后,基于这些工艺参数,用密相流体对包含基板的清洁室进行加压。 然后用密相流体再次基于这些工艺参数清洗基材。 排气流体随后从清洗室排出,然后分析。 然后根据排放流体的分析将过程参数调整到调整过程参数。 此后,清洁室再次被加压并重复清洗。 这种加压和清洁是基于经过调整的工艺参数。 此外,重复这种加压和清洁,直到基底充分清洁。

    Method of making barrier layers
    4.
    发明授权
    Method of making barrier layers 失效
    制作阻隔层的方法

    公开(公告)号:US07074640B2

    公开(公告)日:2006-07-11

    申请号:US10442860

    申请日:2003-05-20

    IPC分类号: H01L21/00

    摘要: The present invention involves a low-temperature, photoresist-free method of fabricating a barrier layer on a flexible substrate. An embodiment involves the conversion of a precursor into a top-surface imaging layer during a direct patterning step. Preferred precursors are formed from a metal complex comprising at least one ligand selected from the group consisting of acac, carboxylato, alkoxy, azide, carbonyl, nitrato, amine, halide, nitro, and mixtures thereof and at least one metal selected from the group consisting of Li, Al, Si, Ti, V, Cr, Mn, Fe, Ni, Co, Cu, Zn, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Ba, La, Pr, Sm, Eu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Pb, Th, U, Sb, As, Ce, Mg, and mixtures thereof.

    摘要翻译: 本发明涉及在柔性基板上制造阻挡层的低温无光致抗蚀剂方法。 一个实施方案涉及在直接构图步骤期间将前体转化成顶表面成像层。 优选的前体由包含至少一种选自阿卡酸,羧基,烷氧基,叠氮化物,羰基,硝酸根,胺,卤化物,硝基和其混合物的至少一种配体的金属络合物形成,并且选自以下组中的至少一种金属: 的Li,Al,Si,Ti,V,Cr,Mn,Fe,Ni,Co,Cu,Zn,Sr,Y,Zr,Nb,Mo,Ru,Rh,Pd,Ag,In,Sn,Ba,La ,Pr,Sm,Eu,Hf,Ta,W,Re,Os,Ir,Pt,Au,Pb,Th,U,Sb,As,Ce,Mg及其混合物。

    Reactive aqueous metal oxide sols as polishing slurries for low dielectric constant materials
    6.
    发明授权
    Reactive aqueous metal oxide sols as polishing slurries for low dielectric constant materials 失效
    活性含水金属氧化物溶胶作为低介电常数材料的抛光浆料

    公开(公告)号:US06464740B1

    公开(公告)日:2002-10-15

    申请号:US09561387

    申请日:2000-04-27

    IPC分类号: C09K314

    摘要: An aqueous metal oxide sol slurry has been developed for removal of low dielectric constant materials. The slurry is formed directly in solution utilizing non-dehydrated chemically active metal oxide sols which are formed in a colloidal suspension or dispersion. The oxide sols have not undergone any subsequent drying and the particles are believed to be substantially spherical in structure, dimensionally stable and do not change shape over time. The sol particles are mechanically soft and heavily hydrated which reduces surface damage even in the case where soft polymer or porous dielectric films are polished. The sol particles are formed of a chemically active metal oxide material, or combinations thereof, or can be coated on chemically inactive oxide material such as silicon dioxide or can be conformed therewith. The oxide sols can include a bi-modal particle distribution. The slurry can be utilized in CMP processes, with or without conditioning.

    摘要翻译: 已经开发了用于去除低介电常数材料的金属氧化物溶胶浆料水溶液。 使用以胶体悬浮液或分散体形成的非脱水化学活性金属氧化物溶胶,直接在溶液中形成浆液。 氧化物溶胶没有经历任何随后的干燥,并且所述颗粒被认为在结构上基本上是球形的,尺寸稳定的并且不随时间改变形状。 溶胶颗粒机械柔软并且水分高,即使在软质聚合物或多孔电介质膜被抛光的情况下也能降低表面损伤。 溶胶颗粒由化学活性金属氧化物材料或其组合形成,或者可以涂覆在化学惰性氧化物材料如二氧化硅上或者可以与其一致。 氧化物溶胶可以包括双模态粒子分布。 浆料可用于CMP工艺,有或没有调理。

    System and method for mid-pressure dense phase gas and ultrasonic cleaning
    7.
    发明授权
    System and method for mid-pressure dense phase gas and ultrasonic cleaning 失效
    中压密相气体和超声波清洗系统和方法

    公开(公告)号:US07361231B2

    公开(公告)日:2008-04-22

    申请号:US11173603

    申请日:2005-07-01

    IPC分类号: C23G1/00

    摘要: Workpieces are loaded into a cleaning chamber. The cleaning chamber is pressurized with a first dense-phase cleaning fluid, the temperature and pressure of the first dense-phase fluid being maintained at less than about 1500 psi using a temperature control device. The workpieces are soaked in the first dense-phase fluid for a predetermined time period. After soaking, the workpieces are further cleaned by applying a second, localized, high-pressure dense-phase fluid to the surface of the workpieces.

    摘要翻译: 工件装入清洁室。 清洁室用第一密相清洗流体加压,第一密相流体的温度和压力使用温度控制装置保持在小于约1500psi。 将工件在第一密相流体中浸泡预定时间段。 在浸泡之后,通过将第二局部的高压致密相流体施加到工件的表面来进一步清洁工件。