公开(公告)号：US4620909A

公开(公告)日：1986-11-04

申请号：US547475

申请日：1983-10-31

申请人： Graham M. Keyser ,  David L. Mader ,  James A. O'Neill

发明人： Graham M. Keyser ,  David L. Mader ,  James A. O'Neill

IPC分类号： B01D59/32 ,  B01D59/34 ,  C07C17/00

CPC分类号： B01D59/34

摘要： A method is described and claimed for the replenishment of deuterium or tritium concentration in a laser isotope separation process for the production of D.sub.2 O, or for the recovery of tritium from contaminated D.sub.2 O or H.sub.2 O. A working compound is selectively photodissociated by a laser beam and is replenished by contacting an exchange liquid in a countercurrent fashion in a first contacting column. The exchange liquid is replenished with isotope by in turn being contacted with a feed stream in a second contacting apparatus. This second contacting apparatus may be a gas/liquid or liquid/liquid contacting apparatus and the countercurrent flows therein may be about equal or unequal.

摘要翻译： 描述并要求保护用于在用于生产D 2 O的激光同位素分离过程中补充氘或氚浓度的方法，或从污染的D 2 O或H 2 O中回收氚。 工作化合物通过激光束选择性地光分解，并且通过在第一接触塔中以逆流方式接触交换液体来补充。 交换液体通过在第二接触装置中与进料流接触而补充同位素。 该第二接触装置可以是气体/液体或液体/液体接触装置，并且其中的逆流流动可以大致相等或不相等。

公开(公告)号：US5534066A

公开(公告)日：1996-07-09

申请号：US143228

申请日：1993-10-29

申请人： James A. O'Neill ,  Michael L. Passow ,  Tina J. Cotler ,  Jonathan D. Chapple-Sokol ,  Richard A. Conti ,  Jyothi Singh

发明人： James A. O'Neill ,  Michael L. Passow ,  Tina J. Cotler ,  Jonathan D. Chapple-Sokol ,  Richard A. Conti ,  Jyothi Singh

IPC分类号： G01N21/33 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  C23F4/00 ,  G01N21/35 ,  H01L21/205 ,  H01L21/302 ,  H01L21/31 ,  H01L31/00 ,  B05C5/00

CPC分类号： G01N21/3504 ,  C23C16/52

摘要： An apparatus for processing a layer on a workpiece includes a source of reactant fluid, a reaction chamber having a support for the workpiece and a fluid delivery apparatus for feeding an input fluid into the reaction chamber with the input fluid being utilized to process the material. An infrared sensor is adapted to cooperate with the fluid delivery apparatus for sensing the concentration of a component of the input fluid. The infrared sensor includes an infrared light source positioned to direct a beam of infrared light at an infrared light detector through the input fluid. The infrared light detector produces an electrical output signal indicative of the amount of light received by the detector and therefore not absorbed by the input fluid.

摘要翻译： 用于处理工件上的层的设备包括反应物流体源，具有用于工件的支撑的反应室和用于将输入流体输送到反应室中的流体输送装置，其中输入流体用于处理材料。 红外传感器适于与流体输送装置配合，用于感测输入流体的组分的浓度。 红外传感器包括红外光源，其被定位成通过输入流体引导红外光检测器处的​​红外光束。 红外光检测器产生指示由检测器接收的光量的电输出信号，因此不被输入流体吸收。

公开(公告)号：US20180165131A1

公开(公告)日：2018-06-14

申请号：US15375940

申请日：2016-12-12

申请人： Fearghal O'Hare ,  Michael Nolan ,  James A. O'Neill

发明人： Fearghal O'Hare ,  Michael Nolan ,  James A. O'Neill

IPC分类号： G06F9/50 ,  H04L12/24 ,  H04W4/00 ,  G06F9/455

摘要： Systems and methods for are provided for offloading computing tasks from constrained devices. An example apparatus includes an offload computing protocol (OCP) enabled device. The OCP enabled device includes OCP extensions to the operating system to enable the offloading of computing tasks. A proximity locator may use a radio transceiver to locate an OCP device that can accept a computing task. The OCP enabled device may include an OCP bundle comprising code and data, wherein the OCP bundle is to be sent to the OCP device.

公开(公告)号：US5433258A

公开(公告)日：1995-07-18

申请号：US191894

申请日：1994-02-04

申请人： Michael S. Barnes ,  Dennis K. Coultas ,  John C. Forster ,  John H. Keller ,  James A. O'Neill

发明人： Michael S. Barnes ,  Dennis K. Coultas ,  John C. Forster ,  John H. Keller ,  James A. O'Neill

IPC分类号： C23C14/00 ,  C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  C23C16/30 ,  C23C14/34 ,  C23C16/50 ,  H05H1/00

CPC分类号： H01J37/32431 ,  H01J2237/022 ,  H01J2237/028

摘要： Apparatus and methods for plasma processing involving the gettering of particles having a high charge to mass ratio away from a semiconductor wafer are disclosed. In one aspect of the invention, magnets are used to produce a magnetic field which is transverse to an electric field to draw the negative particles away from the wafer to prevent the formation of a sheath which can trap the particles. In a second aspect of the invention, a power source is connected to the wafer electrode to maintain a negative charge on the wafer, thereby preventing negative particles from being drawn to the wafer surface when the plasma is turned off. In other embodiments of the invention, a low density plasma source is used to produce a large plasma sheath which permits particles to cross a chamber to be gettered. A low density plasma discharge followed by a pulse to a higher density is used to overcome the negative effect of an insulating layer between the wafer and the wafer electrode.

摘要翻译： 公开了用于等离子体处理的装置和方法，其涉及吸收远离半导体晶片的高电荷质量比的颗粒。 在本发明的一个方面，磁体用于产生横向于电场的磁场，以将负极微粒从晶片上拉出以防止形成能够捕获颗粒的护套。 在本发明的第二方面中，电源连接到晶片电极以在晶片上保持负电荷，从而防止当等离子体截止时负极被吸引到晶片表面。 在本发明的其它实施例中，使用低密度等离子体源来产生允许颗粒穿过室的大等离子体鞘。 使用低密度等离子体放电，随后是脉冲到较高密度，以克服晶片和晶片电极之间的绝缘层的负面影响。

公开(公告)号：US06518145B1

公开(公告)日：2003-02-11

申请号：US09130226

申请日：1998-08-06

申请人： Johann Alsmeier ,  George R. Goth ,  Max G. Levy ,  Victor R. Nastasi ,  James A. O'Neill ,  Paul C. Parries

发明人： Johann Alsmeier ,  George R. Goth ,  Max G. Levy ,  Victor R. Nastasi ,  James A. O'Neill ,  Paul C. Parries

IPC分类号： H01L2176

CPC分类号： H01L21/763 ,  H01L21/823481

摘要： A method of manufacturing a semiconductor trench device comprises forming a dielectric on a substrate, the dielectric having an underlying oxide layer adjacent the substrate, etching a trench in the dielectric and the substrate, forming a recess in the underlying oxide layer, filling the recess with a nitride plug, filling the trench a conductive material and oxidizing the dielectric and the conductive material, wherein the nitride plug controls a shape of a corner of the trench.

摘要翻译： 制造半导体沟槽器件的方法包括在衬底上形成电介质，所述电介质具有与衬底相邻的下面的氧化物层，蚀刻电介质和衬底中的沟槽，在下面的氧化物层中形成凹陷，用 氮化物塞，将沟槽填充导电材料并氧化电介质和导电材料，其中氮化物塞控制沟槽角部的形状。

公开(公告)号：US5431734A

公开(公告)日：1995-07-11

申请号：US234900

申请日：1994-04-28

申请人： Jonathan D. Chapple-Sokol ,  Richard A. Conti ,  James A. O'Neill ,  Narayana V. Sarma ,  Donald L. Wilson ,  Justin W.-C. Wong

发明人： Jonathan D. Chapple-Sokol ,  Richard A. Conti ,  James A. O'Neill ,  Narayana V. Sarma ,  Donald L. Wilson ,  Justin W.-C. Wong

IPC分类号： H01L21/205 ,  C23C16/40 ,  C23C16/44 ,  C23C16/448 ,  C23C16/52 ,  B05C11/00

CPC分类号： C23C16/52 ,  C23C16/403 ,  C23C16/4402 ,  C23C16/4485 ,  Y10S438/935

摘要： A method and apparatus for monitoring and controlling reactant vapors prior to chemical vapor deposition (CVD). The reactant vapors are monitored at full concentration without sampling as they are transported to a CVD reactor. Contaminants detected cause a process controller to switch the transport path to direct reactant vapors to a system pump.

摘要翻译： 一种用于在化学气相沉积（CVD）之前监测和控制反应物蒸气的方法和装置。 当反应物蒸气被输送到CVD反应器时，反应物蒸气以全浓度监测，不进行取样。 检测到的污染物导致过程控制器将输送路径切换为直接反应物蒸汽到系统泵。

公开(公告)号：US5308414A

公开(公告)日：1994-05-03

申请号：US995727

申请日：1992-12-23

申请人： James A. O'Neill ,  Michael L. Passow ,  Jyothi Singh

发明人： James A. O'Neill ,  Michael L. Passow ,  Jyothi Singh

IPC分类号： G01J3/00 ,  G01J3/443 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/00 ,  H05H1/46 ,  G01N21/00

CPC分类号： H01J37/32935

摘要： An apparatus and method for determining the time at which a plasma etching process should be terminated. The process generates at least one etch product species and a continuum plasma emission. The apparatus monitors the optical emission intensity of the plasma in a narrow band centered about a predetermined spectral line and generates a first signal indicative of the spectral intensity of the etch product species. The apparatus further monitors the optical emission intensity of the plasma in a wide band and generates a second signal indicative of the spectral intensity of the continuum plasma emission. The apparatus further monitors the magnitudes of the first and second signals and generates a termination signal when the magnitudes diverge.

摘要翻译： 一种用于确定等离子体蚀刻工艺应终止的时间的装置和方法。 该方法产生至少一种蚀刻产物物质和连续体等离子体发射。 该装置以围绕预定光谱线为中心的窄带监测等离子体的光发射强度，并产生指示蚀刻产物种类的光谱强度的第一信号。 该装置进一步监测宽带中的等离子体的光发射强度，并产生指示连续体等离子体发射的光谱强度的第二信号。 该装置还监视第一和第二信号的幅度，并且当幅度发散时产生终止信号。

公开(公告)号：US5540777A

公开(公告)日：1996-07-30

申请号：US541284

申请日：1995-10-12

申请人： Steven G. Barbee ,  Jonathan D. Chapple-Sokol ,  Richard A. Conti ,  Richard Hsiao ,  James A. O'Neill ,  Narayana V. Sarma ,  Donald L. Wilson ,  Justin W.-C. Wong ,  Steven P. Zuhoski

发明人： Steven G. Barbee ,  Jonathan D. Chapple-Sokol ,  Richard A. Conti ,  Richard Hsiao ,  James A. O'Neill ,  Narayana V. Sarma ,  Donald L. Wilson ,  Justin W.-C. Wong ,  Steven P. Zuhoski

IPC分类号： C23C16/40 ,  C23C16/448 ,  C23C16/52 ,  H01L21/205 ,  H01L21/31 ,  H01L21/316 ,  C23C16/00

CPC分类号： C23C16/403 ,  C23C16/4481 ,  C23C16/52

摘要： A process and apparatus for Al.sub.2 O.sub.3 CVD on silicon wafers using aluminum tri-isopropoxide in a high-volume production environment is presented. The conditions required to use ATI in a production environment and provide maximum utilization of ATI are first of all delivery of ATI via direct evaporation. The ATI source bottle is pumped out (bypassing substrates) until propene and isopropanol signals are reduced to 1% of process pressure before start of aluminum oxide deposition. Either IR spectroscopy or mass spectrometry can be used to provide a control signal to the microprocessor controller. Heating the supplied tetramer to 120.degree. C. for two hours assures complete conversion to trimer. The ATI is stored at 90.degree. C. to minimize decomposition during idle periods and allow recovery of trimer upon return to 120.degree. C. for two hours. During periods of demand, the ATI is held at 120.degree. C. to minimize decomposition.

摘要翻译： 介绍了在大批量生产环境中使用三异丙氧基铝的硅晶片上Al2O3 CVD的工艺和装置。 在生产环境中使用ATI并提供ATI的最大利用率所需的条件首先通过直接蒸发传送ATI。 在开始氧化铝沉积之前，将ATI源瓶泵出（旁路基板），直到丙烯和异丙醇信号降低到过程压力的1％。 可以使用红外光谱或质谱法向微处理器控制器提供控制信号。 将供应的四聚体加热至120℃保持两小时，确保完全转化为三聚体。 将ATI储存在90℃以使空闲期间的分解最小化，并允许在回到120℃回收三聚体两小时。 在需求期间，ATI保持在120℃以最小化分解。

公开(公告)号：US5332441A

公开(公告)日：1994-07-26

申请号：US785628

申请日：1991-10-31

申请人： Michael S. Barnes ,  Dennis K. Coultas ,  John C. Forster ,  John H. Keller ,  James A. O'Neill

发明人： Michael S. Barnes ,  Dennis K. Coultas ,  John C. Forster ,  John H. Keller ,  James A. O'Neill

IPC分类号： C23C14/00 ,  C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  C23C16/00 ,  B05C5/00

CPC分类号： H01J37/32431 ,  H01J2237/022 ,  H01J2237/028

摘要： Apparatus for plasma processing involving the gettering of particles having a high charge to mass ratio away from a semiconductor wafer are disclosed. In one aspect of the invention, magnets are used to produce a magnetic field which is transverse to an electric field to draw the negative particles away from the wafer to prevent the formation of a sheath which can trap the particles. In a second aspect of the invention, a power source is connected to the wafer electrode to maintain a negative charge on the wafer, thereby preventing negative particles from being drawn to the wafer surface when the plasma is turned off. In other embodiments of the invention, a low density plasma source is used to produce a large plasma sheath which permits particles to cross a chamber to be gettered. A low density plasma discharge followed by a pulse to a higher density is used to overcome the negative effect of an insulating layer between the wafer and the wafer electrode.

摘要翻译： 公开了一种用于等离子体处理的装置，其涉及吸收远离半导体晶片的高电荷质量比的颗粒。 在本发明的一个方面，磁体用于产生横向于电场的磁场，以将负极微粒从晶片上拉出以防止形成能够捕获颗粒的护套。 在本发明的第二方面中，电源连接到晶片电极以在晶片上保持负电荷，从而防止当等离子体截止时负极被吸引到晶片表面。 在本发明的其它实施例中，使用低密度等离子体源来产生允许颗粒穿过室的大等离子体鞘。 使用低密度等离子体放电，随后是脉冲到较高密度，以克服晶片和晶片电极之间的绝缘层的负面影响。

公开(公告)号：US5193298A

公开(公告)日：1993-03-16

申请号：US826032

申请日：1992-01-27

申请人： James A. O'Neill

发明人： James A. O'Neill

IPC分类号： A01K91/02

CPC分类号： A01K91/02

摘要： A fishing rod apparatus is arranged with a first and second rod tube reciprocatably mounting a plunger therethrough. The second rod tube selectively utilizes spring or pneumatic pressure to direct the rod exteriorly through a forward end portion of the first tube. The forward end portion of the first tube is arranged to position a fishing line support such as a float to direct the associated fishing line to a desired target casting position relative to the rod structure.

摘要翻译： 钓竿装置布置有第一和第二杆管，其可往复运动地安装柱塞通过其中。 第二杆管选择性地利用弹簧或气动压力将杆引导到第一管的前端部分外部。 第一管的前端部分布置成定位钓线支撑件例如浮子，以将相关联的钓鱼线相对于杆结构引导到期望的目标铸造位置。