公开(公告)号：US20220223707A1

公开(公告)日：2022-07-14

申请号：US17657168

申请日：2022-03-30

Applicant: Japan Display Inc.

Inventor： Akihiro Hanada ,  Takuo Kaitoh ,  Hajime Watakabe

IPC: H01L29/49 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1368

Abstract: The purpose of the present invention is to suppress a change in characteristics of a TFT using an oxide semiconductor film caused by that oxygen in the oxide semiconductor film is extracted by metal electrode. The main structure of the present invention is as follows. A semiconductor device having a TFT, in which a gate insulating film is formed on a gate electrode, and an oxide semiconductor film is formed on the gate insulating film; the oxide semiconductor film including a channel region, a drain region, and a source region; in which a metal nitride film is formed on a top surface of the gate electrode in an opposing portion to the channel region in a plan view; and the metal nitride film is not formed at a part of the top surface of the gate electrode.

公开(公告)号：US12189253B2

公开(公告)日：2025-01-07

申请号：US18673809

申请日：2024-05-24

Applicant: Japan Display Inc.

Inventor： Akihiro Hanada ,  Takuo Kaitoh ,  Ryo Onodera ,  Motochika Yukawa

IPC: G02F1/1339 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368

Abstract: A display device includes a first conductive layer arranged on a first substrate and extending in a first direction, a first insulating film arranged on the first conductive layer, a second conductive layer arranged on the first insulating film and extending in a second direction intersecting the first direction, a second insulating film arranged on the second conductive layer and extending in the first direction and the second direction, a transparent conductive layer arranged on the second insulating film and extending in the first direction and the second direction, a third insulating film arranged on the first conductive layer, and a second substrate opposing the first substrate.

公开(公告)号：US12158661B2

公开(公告)日：2024-12-03

申请号：US18502178

申请日：2023-11-06

Applicant: Japan Display Inc.

Inventor： Akihiro Hanada ,  Takuo Kaitoh ,  Ryo Onodera ,  Tomoyuki Ito ,  Yoshinori Tanaka

IPC: G02F1/13357 ,  G02F1/1334 ,  H01L27/12

Abstract: A display device includes a first nitride insulating film arranged on a first substrate, a gate electrode arranged along a first direction on the first nitride insulating film, a second nitride insulating film arranged on the gate electrode, a first oxide insulating film arranged on the second nitride insulating film, and an oxide semiconductor layer arranged on the first oxide insulating film, wherein the gate electrode has a first titanium layer, an aluminum layer, and a second titanium layer stacked in order from the first nitride insulating film side, and a thickness of the second titanium layer is greater than a thickness of the first titanium layer.

公开(公告)号：US12154989B2

公开(公告)日：2024-11-26

申请号：US17523054

申请日：2021-11-10

Applicant: Japan Display Inc.

Inventor： Akihiro Hanada ,  Takuo Kaitoh

IPC: H01L29/786

Abstract: A semiconductor device includes a thin-film transistor. The thin-film transistor comprises an oxide semiconductor layer, a gate insulating layer, a gate electrode overlapped on the oxide semiconductor layer through the gate insulating layer, a source electrode in contact with the oxide semiconductor layer, a drain electrode in contact with the oxide semiconductor layer and n (n is a natural number) metal layer(s) in contact with the oxide semiconductor layer and disposed across the oxide semiconductor layer between the source electrode and the drain electrode. The oxide semiconductor layer has (n+1) channel regions between the source electrode and the drain electrode in a plan view.

公开(公告)号：US12068399B2

公开(公告)日：2024-08-20

申请号：US17511633

申请日：2021-10-27

Applicant: Japan Display Inc.

Inventor： Akihiro Hanada ,  Takuo Kaitoh ,  Ryo Onodera ,  Takashi Okada ,  Tomoyuki Ito ,  Toshiki Kaneko

IPC: H01L29/66 ,  H01L21/385 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/385 ,  H01L27/1225 ,  H01L29/7869

Abstract: According to one embodiment, a method for manufacturing a semiconductor device, includes forming a first insulating film which covers a gate electrode, forming an island-shaped oxide semiconductor in contact with the first insulating film, forming a second insulating film which covers the oxide semiconductor, forming a source electrode in contact with the oxide semiconductor, forming a drain electrode in contact with the oxide semiconductor, forming a third insulating film which covers the source electrode and the drain electrode and forming a channel region between the source electrode and the drain electrode by supplying oxygen from the third insulating film to the oxide semiconductor via the second insulating film.

公开(公告)号：US11599001B2

公开(公告)日：2023-03-07

申请号：US17126475

申请日：2020-12-18

Applicant: Japan Display Inc.

Inventor： Akio Takimoto ,  Toshiki Kaneko ,  Takuo Kaitoh ,  Kazuhiro Nishiyama ,  Hiroyuki Kimura

IPC: G09G3/36 ,  G02F1/137 ,  F21V8/00 ,  G02F1/1335 ,  H04N5/225

Abstract: According to one embodiment, an electronic apparatus includes a camera, a first polarizer, a second polarizer, a liquid crystal panel, and a controller controlling the liquid crystal panel. The liquid crystal panel includes a first region and a second region. The controller controls a first opening mode of transmitting light through the first region and the second region, and a second opening mode of making a quantity of light transmitted through the first region smaller than a quantity of light transmitted through the second region.

公开(公告)号：US11215862B2

公开(公告)日：2022-01-04

申请号：US17153336

申请日：2021-01-20

Applicant: Japan Display Inc.

Inventor： Akio Takimoto ,  Toshiki Kaneko ,  Takuo Kaitoh ,  Kazuhiro Nishiyama ,  Hiroyuki Kimura

IPC: G02F1/1333 ,  G02F1/29 ,  F21V8/00 ,  G02F1/1335 ,  H04N5/225 ,  G02F1/1343

Abstract: According to one embodiment, an electronic equipment includes a liquid crystal panel including a display portion, a polarizer superposed on the display portion, and a detection element superposed on the liquid crystal panel and the polarizer to detect infrared rays through the liquid crystal panel and the polarizer.

公开(公告)号：US12191397B2

公开(公告)日：2025-01-07

申请号：US17522258

申请日：2021-11-09

Applicant: Japan Display Inc.

Inventor： Akihiro Hanada ,  Hajime Watakabe ,  Takuo Kaitoh ,  Ryo Onodera

IPC: H01L29/786

Abstract: A semiconductor device includes a thin-film transistor. The thin-film transistor comprises an oxide semiconductor layer, a gate insulating layer, a gate electrode overlapped on the oxide semiconductor layer through the gate insulating layer, a source electrode in contact with the oxide semiconductor layer, a drain electrode in contact with the oxide semiconductor layer and a first metal layer in contact with the oxide semiconductor layer and disposed between the source electrode and the drain electrode at a distance from the source electrode and the drain electrode.

公开(公告)号：US12032256B2

公开(公告)日：2024-07-09

申请号：US18448437

申请日：2023-08-11

Applicant: Japan Display Inc.

Inventor： Takuo Kaitoh ,  Akihiro Hanada ,  Yoshinori Tanaka

IPC: G02F1/1362

CPC classification number: G02F1/136286

Abstract: A display device includes a first substrate, a gate wiring on the first substrate, a first insulating layer on the gate wiring, a source wiring on the first insulating layer and intersecting the gate wiring, a second insulating layer on the source wiring, a pixel electrode on the second insulating layer; and a first buffer layer between the first substrate and the first insulating layer. A refractive index of the first buffer layer is higher than a refractive index of the first substrate, at an interface between the first buffer layer and the first substrate, and the refractive index of the first buffer layer is lower than a refractive index of the first insulating layer, at an interface between the first buffer layer and the first insulating layer.