公开(公告)号：US20240168335A1

公开(公告)日：2024-05-23

申请号：US18502178

申请日：2023-11-06

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Takuo KAITOH ,  Ryo ONODERA ,  Tomoyuki ITO ,  Yoshinori TANAKA

IPC: G02F1/13357 ,  G02F1/1334 ,  H01L27/12

CPC classification number: G02F1/133615 ,  G02F1/1334 ,  H01L27/1225

Abstract: A display device includes a first nitride insulating film arranged on a first substrate, a gate electrode arranged along a first direction on the first nitride insulating film, a second nitride insulating film arranged on the gate electrode, a first oxide insulating film arranged on the second nitride insulating film, and an oxide semiconductor layer arranged on the first oxide insulating film, wherein the gate electrode has a first titanium layer, an aluminum layer, and a second titanium layer stacked in order from the first nitride insulating film side, and a thickness of the second titanium layer is greater than a thickness of the first titanium layer.

公开(公告)号：US20240160069A1

公开(公告)日：2024-05-16

申请号：US18509920

申请日：2023-11-15

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Takuo KAITOH ,  Tomoyuki ITO ,  Yoshinori TANAKA

IPC: G02F1/1362 ,  G02F1/1333 ,  G02F1/13357

CPC classification number: G02F1/136286 ,  G02F1/133365 ,  G02F1/133615

Abstract: A display device includes a wiring region including a gate wiring, a source wiring intersecting the gate wiring, and a first insulating layer between the gate wiring and the source wiring and an opening region including a pixel electrode on the first insulating layer and adjacent to the wiring region. The first insulating layer includes a first oxide insulating layer and a first nitride insulating layer, the first oxide insulating layer is disposed over the wiring region and the opening region, the first nitride insulating layer is disposed in the wiring region and includes a first opening overlapping the opening region, and the pixel electrode overlaps the first opening.

公开(公告)号：US20220246764A1

公开(公告)日：2022-08-04

申请号：US17724512

申请日：2022-04-20

Applicant: Japan Display Inc.

Inventor： Isao SUZUMURA ,  Hajime WATAKABE ,  Akihiro HANADA ,  Ryo ONODERA ,  Tomoyuki ITO

IPC: H01L29/786

Abstract: The present invention addresses the problem of: realizing a TFT that uses an oxide semiconductor and that is capable of maintaining stable characteristics even in the case where the TFT is miniaturized; and realizing a display device that has high-definition pixels using such a TFT. To solve this problem, the present invention has the following configuration. A semiconductor device including an oxide semiconductor TFT formed using an oxide semiconductor film 109, the semiconductor device being characterized in that: the channel length of the oxide semiconductor TFT is 1.3 to 2.3 μm; and the sheet resistance of a source region 1092 and a drain region 1091 of the oxide semiconductor film 109 is 1.4 to 20 KΩ/□.

公开(公告)号：US20220140117A1

公开(公告)日：2022-05-05

申请号：US17511633

申请日：2021-10-27

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Takuo KAITOH ,  Ryo ONODERA ,  Takashi OKADA ,  Tomoyuki ITO ,  Toshiki KANEKO

IPC: H01L29/66 ,  H01L29/786 ,  H01L21/385

Abstract: According to one embodiment, a method for manufacturing a semiconductor device, includes forming a first insulating film which covers a gate electrode, forming an island-shaped oxide semiconductor in contact with the first insulating film, forming a second insulating film which covers the oxide semiconductor, forming a source electrode in contact with the oxide semiconductor, forming a drain electrode in contact with the oxide semiconductor, forming a third insulating film which covers the source electrode and the drain electrode and forming a channel region between the source electrode and the drain electrode by supplying oxygen from the third insulating film to the oxide semiconductor via the second insulating film.

公开(公告)号：US20200326571A1

公开(公告)日：2020-10-15

申请号：US16911930

申请日：2020-06-25

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Tomoyuki ITO

IPC: G02F1/1368 ,  H01L29/786 ,  H01L27/12 ,  H01L27/32

Abstract: The purpose of the present invention is to suppress the change in characteristics of the TFT formed on the polyimide substrate. An example of the present invention is a display device having a first TFT of an oxide semiconductor film and a second TFT of a polysilicon film formed on the substrate made of resin including the first TFT and the second TFT do not overlap in a plan view, a distance between the second TFT and the substrate is shorter than a distance between the first TFT and the substrate in a cross sectional view, a second polysilicon film is formed between the oxide semiconductor film and the substrate, the second polysilicon film is made of the same material as the first polysilicon film and is formed on the same layer that the first polysilicon is formed.