公开(公告)号：US20090237770A1

公开(公告)日：2009-09-24

申请号：US12375343

申请日：2007-04-24

Applicant: Hyun-Soo Kim ,  Jeong-Woo Park ,  Bongki Mheen ,  Gyungock Kim

Inventor： Hyun-Soo Kim ,  Jeong-Woo Park ,  Bongki Mheen ,  Gyungock Kim

IPC: G02F1/015 ,  H01L29/78 ,  H01L33/00

CPC classification number: G02F1/025 ,  G02F1/225 ,  G02F1/3132 ,  H01L31/105

Abstract: Provided is an optical device with improved phase shift and propagation loss of light without decreasing the dynamic characteristics of the optical device. The optical device includes a first semiconductor layer which is doped with a first type of conductive impurities and has a uniform thickness; a gate insulating layer which has a ? shape and is formed on a portion of the first semiconductor layer and has a thin center portion; and a second semiconductor layer which covers an upper surface of the gate insulating layer and is doped with a second type of conductive impurities opposite to the first type of conductive type impurities.

Abstract translation: 提供了一种具有改善的相移和光传播损耗的光学器件，而不会降低光学器件的动态特性。 光学器件包括掺杂有第一类导电杂质并具有均匀厚度的第一半导体层; 栅绝缘层， 形成在第一半导体层的一部分上，并且具有薄的中心部分; 以及第二半导体层，其覆盖所述栅极绝缘层的上表面并且掺杂有与所述第一类型的导电类型杂质相反的第二类型的导电杂质。

公开(公告)号：US08761553B2

公开(公告)日：2014-06-24

申请号：US13302371

申请日：2011-11-22

Applicant: Sahnggi Park ,  Gyungock Kim ,  In Gyoo Kim ,  Jeong Woo Park ,  Sang Hoon Kim ,  Do Won Kim

Inventor： Sahnggi Park ,  Gyungock Kim ,  In Gyoo Kim ,  Jeong Woo Park ,  Sang Hoon Kim ,  Do Won Kim

IPC: G02B6/26 ,  G02B6/12

CPC classification number: H04J14/028 ,  G02B6/12007 ,  H01S5/026 ,  H01S5/1032 ,  H01S5/4087 ,  H04J14/02 ,  H04J14/0201

Abstract: Provided is an optical network structure. To configure an optical network structure between hundreds or more of cores in a CPU, intersection between waveguides does not occur, and thus, the optical network structure enables two-way communication between all the cores without an optical switch disposed in an intersection point. The present invention enables a single chip optical network using a silicon photonics optical element, and a CPU chip configured with hundreds or thousands of cores can be developed.

Abstract translation: 提供了一种光网络结构。 为了在CPU中配置数百个或更多个核心之间的光网络结构，不会发生波导之间的交叉，因此，光网络结构在所有核心之间实现双向通信，而光交换机不设置在交叉点。 本发明使得能够使用硅光子学光学元件的单芯片光网络，并且可以开发配置有数百或数千个核的CPU芯片。

公开(公告)号：US08520985B2

公开(公告)日：2013-08-27

申请号：US12975161

申请日：2010-12-21

Applicant: Jeong Woo Park ,  Gyungock Kim

Inventor： Jeong Woo Park ,  Gyungock Kim

IPC: G02F1/025 ,  G02F1/035

CPC classification number: G02F1/025 ,  G02F1/2257 ,  G02F2001/212 ,  G02F2201/12 ,  G02F2202/105

Abstract: Provided is a Mach-Zehnder modulator. The Mach-Zehnder modulator comprises an input wave guide and an output wave guide arranged on a substrate, a first branch wave guide and a second branch wave guide connected in parallel between the input and output wave guides, and a connecting region configured to connect the first branch wave guide and the second branch wave guide. Each of the first and second branch wave guides comprises first doped regions doped with a first dopant and second doped regions doped with a second dopant having different conductivity from the first dopant, and the connecting region is doped with the first dopant and arranged between the first regions of the first and second branch wave guides.

Abstract translation: 提供了马赫 - 曾德尔调制器。 马赫 - 策德尔调制器包括布置在基板上的输入波导和输出波导，在输入和输出波导之间并联连接的第一分支波导和第二分支波导，以及连接区域， 第一分支波导和第二分支波导。 第一和第二分支波导中的每一个包括掺杂有第一掺杂物的第一掺杂区域和掺杂有与第一掺杂剂不同导电性的第二掺杂剂的第二掺杂区域，并且连接区域掺杂有第一掺杂剂并且布置在第一掺杂区域之间 第一和第二分支波导的区域。

公开(公告)号：US08346026B2

公开(公告)日：2013-01-01

申请号：US12517802

申请日：2007-08-07

Applicant: Jeong-Woo Park ,  Gyungock Kim ,  Young-Ahn Leem ,  Hyun-Soo Kim ,  Bongki Mheen

Inventor： Jeong-Woo Park ,  Gyungock Kim ,  Young-Ahn Leem ,  Hyun-Soo Kim ,  Bongki Mheen

IPC: G02F1/035 ,  G02B6/12 ,  G02B6/00

CPC classification number: H01L31/12 ,  H01L27/144

Abstract: Provided are a photoelectric device using a PN diode and a silicon integrated circuit (IC) including the photoelectric device. The photoelectric device includes: a substrate; and an optical waveguide formed as a PN diode on the substrate, wherein a junction interface of the PN diode is formed in a direction in which light advances; and an electrode applying a reverse voltage to the PN diode, wherein N-type and P-type semiconductors of the PN diode are doped at high concentrations and the doping concentration of the N-type semiconductor is higher than or equal to that of the P-type semiconductor.

Abstract translation: 提供了使用PN二极管的光电装置和包括光电装置的硅集成电路（IC）。 光电装置包括：基板; 以及在所述衬底上形成为PN二极管的光波导，其中所述PN二极管的结界面沿光前进的方向形成; 以及向PN二极管施加反向电压的电极，其中PN二极管的N型和P型半导体以高浓度掺杂，并且N型半导体的掺杂浓度高于或等于P 型半导体。

公开(公告)号：US07928442B2

公开(公告)日：2011-04-19

申请号：US12441381

申请日：2007-08-17

Applicant: Bongki Mheen ,  Jeong-Woo Park ,  Hyun-Soo Kim ,  Gyungock Kim

Inventor： Bongki Mheen ,  Jeong-Woo Park ,  Hyun-Soo Kim ,  Gyungock Kim

IPC: H01L31/036

CPC classification number: G02F1/025 ,  G02F1/2257 ,  H01L33/0037

Abstract: Provided is an optical device having a strained buried channel area. The optical device includes: a semiconductor substrate of a first conductive type; a gate insulating layer formed on the semiconductor substrate; a gate of a second conductive type opposite to the first conductive type, formed on the gate insulating layer; a high density dopant diffusion area formed in the semiconductor substrate under the gate and doped with a first conductive type dopant having a higher density than the semiconductor substrate; a strained buried channel area formed of a semiconductor material having a different lattice parameter from a material of which the semiconductor substrate is formed and extending between the gate insulating layer and the semiconductor substrate to contact the high density dopant diffusion area; and a semiconductor cap layer formed between the gate insulating layer and the strained buried channel area.

Abstract translation: 提供了具有应变埋入通道区域的光学装置。 该光学器件包括：第一导电类型的半导体衬底; 形成在半导体衬底上的栅极绝缘层; 形成在栅极绝缘层上的与第一导电类型相反的第二导电类型的栅极; 形成在所述半导体衬底下的高密度掺杂剂扩散区，并且掺杂有比所述半导体衬底更高密度的第一导电型掺杂剂; 由半导体材料形成的应变掩埋沟道区域，具有与形成半导体衬底的材料不同的晶格参数，并且在栅极绝缘层和半导体衬底之间延伸以接触高密度掺杂剂扩散区域; 以及形成在栅绝缘层和应变埋入沟道区之间的半导体盖层。

公开(公告)号：US07994549B2

公开(公告)日：2011-08-09

申请号：US12375343

申请日：2007-04-24

Applicant: Hyun-Soo Kim ,  Jeong-Woo Park ,  Bongki Mheen ,  Gyungock Kim

Inventor： Hyun-Soo Kim ,  Jeong-Woo Park ,  Bongki Mheen ,  Gyungock Kim

IPC: H01L29/76

CPC classification number: G02F1/025 ,  G02F1/225 ,  G02F1/3132 ,  H01L31/105

Abstract: Provided is an optical device with improved phase shift and propagation loss of light without decreasing the dynamic characteristics of the optical device. The optical device includes a first semiconductor layer which is doped with a first type of conductive impurities and has a uniform thickness; a gate insulating layer which has a shape and is formed on a portion of the first semiconductor layer and has a thin center portion; and a second semiconductor layer which covers an upper surface of the gate insulating layer and is doped with a second type of conductive impurities opposite to the first type of conductive type impurities.

Abstract translation: 提供了一种具有改善的相移和光传播损耗的光学器件，而不会降低光学器件的动态特性。 光学器件包括掺杂有第一类导电杂质并具有均匀厚度的第一半导体层; 栅极绝缘层，其具有形状并且形成在所述第一半导体层的一部分上并且具有薄的中心部分; 以及第二半导体层，其覆盖所述栅极绝缘层的上表面并且掺杂有与所述第一类型的导电类型杂质相反的第二类型的导电杂质。

公开(公告)号：US20100002978A1

公开(公告)日：2010-01-07

申请号：US12517802

申请日：2007-08-07

Applicant: Jeong-Woo Park ,  Gyungock Kim ,  Young-Ahn Leem ,  Hyun-Soo Kim ,  Bongki Mheen

Inventor： Jeong-Woo Park ,  Gyungock Kim ,  Young-Ahn Leem ,  Hyun-Soo Kim ,  Bongki Mheen

IPC: G02F1/035 ,  G02B6/12

CPC classification number: H01L31/12 ,  H01L27/144

Abstract: Provided are a photoelectric device using a PN diode and a silicon integrated circuit (IC) including the photoelectric device. The photoelectric device includes: a substrate; and an optical waveguide formed as a PN diode on the substrate, wherein a junction interface of the PN diode is formed in a direction in which light advances; and an electrode applying a reverse voltage to the PN diode, wherein N-type and P-type semiconductors of the PN diode are doped at high concentrations and the doping concentration of the N-type semiconductor is higher than or equal to that of the P-type semiconductor.

Abstract translation: 提供了使用PN二极管的光电装置和包括光电装置的硅集成电路（IC）。 光电装置包括：基板; 以及在所述衬底上形成为PN二极管的光波导，其中所述PN二极管的结界面沿光前进的方向形成; 以及向PN二极管施加反向电压的电极，其中PN二极管的N型和P型半导体以高浓度掺杂，并且N型半导体的掺杂浓度高于或等于P 型半导体。

公开(公告)号：US20090261383A1

公开(公告)日：2009-10-22

申请号：US12441381

申请日：2007-08-17

Applicant: Bongki Mheen ,  Jeong-Woo Park ,  Hyun-Soo Kim ,  Gyungock Kim

Inventor： Bongki Mheen ,  Jeong-Woo Park ,  Hyun-Soo Kim ,  Gyungock Kim

IPC: H01L29/80

CPC classification number: G02F1/025 ,  G02F1/2257 ,  H01L33/0037

Abstract: Provided is an optical device having a strained buried channel area. The optical device includes: a semiconductor substrate of a first conductive type; a gate insulating layer formed on the semiconductor substrate; a gate of a second conductive type opposite to the first conductive type, formed on the gate insulating layer; a high density dopant diffusion area formed in the semiconductor substrate under the gate and doped with a first conductive type dopant having a higher density than the semiconductor substrate; a strained buried channel area formed of a semiconductor material having a different lattice parameter from a material of which the semiconductor substrate is formed and extending between the gate insulating layer and the semiconductor substrate to contact the high density dopant diffusion area; and a semiconductor cap layer formed between the gate insulating layer and the strained buried channel area.

Abstract translation: 提供了具有应变埋入通道区域的光学装置。 该光学器件包括：第一导电类型的半导体衬底; 形成在半导体衬底上的栅极绝缘层; 形成在栅极绝缘层上的与第一导电类型相反的第二导电类型的栅极; 形成在所述半导体衬底下的高密度掺杂剂扩散区，并且掺杂有比所述半导体衬底更高密度的第一导电型掺杂剂; 由半导体材料形成的应变掩埋沟道区域，具有与形成半导体衬底的材料不同的晶格参数，并且在栅极绝缘层和半导体衬底之间延伸以接触高密度掺杂剂扩散区域; 以及形成在栅绝缘层和应变埋入沟道区之间的半导体盖层。

公开(公告)号：US20120027336A1

公开(公告)日：2012-02-02

申请号：US12975161

申请日：2010-12-21

Applicant: Jeong Woo PARK ,  Gyungock Kim

Inventor： Jeong Woo PARK ,  Gyungock Kim

IPC: G02F1/035

CPC classification number: G02F1/025 ,  G02F1/2257 ,  G02F2001/212 ,  G02F2201/12 ,  G02F2202/105

Abstract: Provided is a Mach-Zehnder modulator. The Mach-Zehnder modulator comprises an input wave guide and an output wave guide arranged on a substrate, a first branch wave guide and a second branch wave guide connected in parallel between the input and output wave guides, and a connecting region configured to connect the first branch wave guide and the second branch wave guide. Each of the first and second branch wave guides comprises first doped regions doped with a first dopant and second doped regions doped with a second dopant having different conductivity from the first dopant, and the connecting region is doped with the first dopant and arranged between the first regions of the first and second branch wave guides.

Abstract translation: 提供了马赫 - 曾德尔调制器。 马赫 - 策德尔调制器包括布置在基板上的输入波导和输出波导，在输入和输出波导之间并联连接的第一分支波导和第二分支波导，以及连接区域， 第一分支波导和第二分支波导。 第一和第二分支波导中的每一个包括掺杂有第一掺杂物的第一掺杂区域和掺杂有与第一掺杂剂不同导电性的第二掺杂剂的第二掺杂区域，并且连接区域掺杂有第一掺杂剂并且布置在第一掺杂区域之间 第一和第二分支波导的区域。

公开(公告)号：US20090207472A1

公开(公告)日：2009-08-20

申请号：US12374261

申请日：2007-04-24

Applicant: Hyun-Soo Kim ,  Jeong-Woo Park ,  Bongki Mheen ,  Young-Ahn Leem ,  Gyungock Kim

Inventor： Hyun-Soo Kim ,  Jeong-Woo Park ,  Bongki Mheen ,  Young-Ahn Leem ,  Gyungock Kim

IPC: G02F1/015 ,  H01L29/786

CPC classification number: G02F1/025 ,  G02F2203/50 ,  G11C13/04

Abstract: Provided is an optical device having an edge effect with improved phase shift and propagation loss of light without decreasing the dynamic characteristics of the optical device. The optical device includes a first semiconductor layer which is doped with a first type of conductive impurities, and has a recessed groove in an upper portion thereof; a gate insulating layer covering the groove and a portion of the first semiconductor layer; and a second semiconductor layer which covers an upper surface of the gate insulating layer and is doped with a second type of conductive impurities opposite to the first type of conductive impurities.

Abstract translation: 提供一种具有边缘效应的光学器件，具有改善的相移和光的传播损耗，而不会降低光学器件的动态特性。 光学器件包括掺杂有第一类导电杂质的第一半导体层，并且在其上部具有凹槽; 覆盖所述沟槽和所述第一半导体层的一部分的栅极绝缘层; 以及覆盖所述栅极绝缘层的上表面并且掺杂有与所述第一类型的导电杂质相反的第二类导电杂质的第二半导体层。