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    RING RESONATORS HAVING Si AND/OR SiN WAVEGUIDES
    4.
    发明申请
    RING RESONATORS HAVING Si AND/OR SiN WAVEGUIDES 审中-公开
    具有Si和/或SiN波长的环形谐振器

    公开(公告)号：US20130156369A1

    公开(公告)日：2013-06-20

    申请号：US13535746

    申请日：2012-06-28

    申请人： Sahnggi Park ,  Kap-Joong Kim ,  In Gyoo Kim ,  Gyungock Kim

    发明人： Sahnggi Park ,  Kap-Joong Kim ,  In Gyoo Kim ,  Gyungock Kim

    IPC分类号： G02B6/12

    CPC分类号： G02B6/12007 ,  G02B2006/12061

    摘要： Provided is a ring resonator including first and second waveguides disposed spaced apart from each other, on a substrate, and at least one channel including at least one ring waveguide arranged in a row between the first and second waveguides. The first and second waveguides and the ring waveguide may be formed of silicon, a width of the ring waveguide may range from 0.7 μm to 1.5 μm, a height of the ring waveguide may range from 150 nm to 300 nm, and a space between the first and second waveguides and the ring waveguide most adjacent thereto may range from 250 nm to 1 mm.

    摘要翻译： 提供了一种环形谐振器，包括彼此间隔开地布置在衬底上的第一和第二波导，以及包括在第一和第二波导之间布置成一行的至少一个环形波导的至少一个通道。 第一和第二波导和环形波导可以由硅形成，环形波导的宽度可以在0.7μm到1.5μm的范围内，环形波导的高度可以在150nm到300nm的范围内， 第一和第二波导以及与其最相邻的环形波导可以在250nm至1mm的范围内。

    Method of tuning resonance wavelength of ring resonator
    5.
    发明授权
    Method of tuning resonance wavelength of ring resonator 失效
    调谐环谐振器谐振波长的方法

    公开(公告)号：US08644657B2

    公开(公告)日：2014-02-04

    申请号：US13175567

    申请日：2011-07-01

    申请人： Sahnggi Park ,  Gyungock Kim

    发明人： Sahnggi Park ,  Gyungock Kim

    IPC分类号： G02B6/26 ,  G02B6/42

    CPC分类号： H01P7/088 ,  G02F1/0147 ,  G02F1/3132 ,  H01P1/2135

    摘要： Provided is a method of tuning a resonance wavelength of a ring resonator. The method of tuning the resonance wavelength of a ring resonator includes preparing a ring resonator which contains a ring waveguide and a dielectric layer covering the ring waveguide, and heating the ring resonator to induce a refractive index phase change of the dielectric layer.

    摘要翻译： 提供了调谐环形谐振器的谐振波长的方法。 调谐环形谐振器的谐振波长的方法包括制备环形谐振器，该环形谐振器包含环形波导和覆盖环形波导的电介质层，并且加热环形谐振器以引起电介质层的折射率相位变化。

    OPTICAL DEVICE AND METHOD OF FABRICATING THE SAME
    6.
    发明申请
    OPTICAL DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
    光学装置及其制造方法

    公开(公告)号：US20100303435A1

    公开(公告)日：2010-12-02

    申请号：US12555767

    申请日：2009-09-08

    申请人： Sahnggi Park ,  Kap-Joong Kim ,  Duk Jun Kim ,  Gyungock Kim

    发明人： Sahnggi Park ,  Kap-Joong Kim ,  Duk Jun Kim ,  Gyungock Kim

    IPC分类号： G02B6/00 ,  G03F7/20

    CPC分类号： G02B6/12007

    摘要： Provided are an optical device and a method of fabricating the same. The optical device includes: a substrate; and a ring resonator on the substrate. The ring resonator includes: a cladding layer including a lower cladding layer and an upper cladding layer on the substrate; a core including a plurality of rings between the lower cladding layer and the upper cladding layer; and an embeded layer interposed between the core and the cladding layer and having a refractive index less than that of the core and more than that of the cladding layer.

    摘要翻译： 提供了一种光学器件及其制造方法。 光学装置包括：基板; 和在基板上的环形谐振器。 环形谐振器包括：在基板上包括下包层和上包层的包层; 芯包括在下包层和上包层之间的多个环; 以及插入在芯和包覆层之间并且折射率小于芯的折射率并且大于包覆层的折射率的嵌入层。

    Reflective semiconductor optical amplifier (R-SOA) with dual buried heterostructure
    7.
    发明授权
    Reflective semiconductor optical amplifier (R-SOA) with dual buried heterostructure 有权
    具有双掩埋异质结构的反射半导体光放大器（R-SOA）

    公开(公告)号：US07920322B2

    公开(公告)日：2011-04-05

    申请号：US11924772

    申请日：2007-10-26

    申请人： Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

    发明人： Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

    IPC分类号： H01S5/00 ,  H01L29/06 ,  H01L33/20

    CPC分类号： G02B6/1228 ,  G02B2006/121 ,  H01L33/0045 ,  H01S5/026 ,  H01S5/028 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/227 ,  H01S5/50

    摘要： Provided are a reflective semiconductor optical amplifier (R-SOA) and a superluminescent diode (SLD). The R-SOA includes: a substrate; an optical waveguide including a lower clad layer, an active layer independent of the polarization of light, and an upper clad layer sequentially stacked on the substrate, the optical waveguide comprising linear, curved, and tapered waveguide areas; and a current blocking layer formed around the optical waveguide to block a flow of current out of the active layer, wherein the linear and curved waveguide areas have a single buried hetero (BH) structure, and the tapered waveguide area has a dual BH structure.

    摘要翻译： 提供了反射半导体光放大器（R-SOA）和超发光二极管（SLD）。 R-SOA包括：基板; 包括下包层，独立于光的偏振的有源层和顺序地堆叠在基板上的上包层的光波导，所述光波导包括线性，弯曲和锥形的波导区域; 以及形成在所述光波导周围的电流阻挡层，以阻挡所述有源层中的电流流动，其中所述线性和弯曲波导区域具有单个埋入异质（BH）结构，并且所述锥形波导区域具有双BH结构。

    Poled fiber, a method of fabricating the poled fiber, and a dispersion compensator
    8.
    发明授权
    Poled fiber, a method of fabricating the poled fiber, and a dispersion compensator 有权
    极化纤维，制造极化纤维的方法和色散补偿器

    公开(公告)号：US06845201B2

    公开(公告)日：2005-01-18

    申请号：US10241993

    申请日：2002-09-12

    申请人： Jongbae Kim ,  Sahnggi Park ,  Yonggyu Choi ,  Jungjin Ju

    发明人： Jongbae Kim ,  Sahnggi Park ,  Yonggyu Choi ,  Jungjin Ju

    IPC分类号： G02B6/00 ,  G02B6/02 ,  G02B6/34 ,  G02F1/355

    CPC分类号： G02F1/3558 ,  G02B6/29394 ,  G02F2201/02

    摘要： A method of fabricating a poled fiber and a dispersion compensator. The method including patterning to cover an etching-resistant material on the body portions of the cladding and on one end or both ends of the optical fiber excluding the portions to be grooved in the longitudinal direction, etching the bare portions of the cladding excluding the portions covered with the etching-resistant material, evaporating electrodes on the etched portions and applying a voltage to the electrodes, and inducing periodic poling generating optical phenomenon of the second-order nonlinearity to the optical fiber through the patterned electrodes. The compensator including a periodic poled fiber to generate a phase conjugate wave of a difference frequency between a pump light and a signal light received from a fiber coupler, and a filter to pass the phase conjugate wave coming out from the periodic poled fiber.

    摘要翻译： 一种制造极化纤维和色散补偿器的方法。 该方法包括图案化以覆盖在包层的主体部分上以及光纤的一端或两端的除了在纵向方向上被切槽的部分之外的耐腐蚀材料，蚀刻除了部分之外的包层的裸露部分 用耐腐蚀材料覆盖，在蚀刻部分上蒸发电极并向电极施加电压，并且通过图案化电极引起周期性极化产生对光纤的二次非线性的光学现象。 补偿器包括周期性极化纤维，以产生泵浦光与从光纤耦合器接收的信号光之间的差分频率的相位共轭波，以及滤波器，以使从周期极化纤维出来的相位共轭波通过。

    Reflective semiconductor optical amplifier (R-SOA) and superluminescent diode (SLD)
    9.
    发明授权
    Reflective semiconductor optical amplifier (R-SOA) and superluminescent diode (SLD) 有权
    反射半导体光放大器（R-SOA）和超发光二极管（SLD）

    公开(公告)号：US08363314B2

    公开(公告)日：2013-01-29

    申请号：US12929970

    申请日：2011-02-28

    申请人： Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

    发明人： Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

    IPC分类号： H01S5/227

    CPC分类号： G02B6/1228 ,  G02B2006/121 ,  H01L33/0045 ,  H01S5/026 ,  H01S5/028 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/227 ,  H01S5/50

    摘要： Provided are a reflective semiconductor optical amplifier (R-SOA) and a superluminescent diode (SLD). The R-SOA includes: a substrate; an optical waveguide including a lower clad layer, an active layer independent of the polarization of light, and an upper clad layer sequentially stacked on the substrate, the optical waveguide comprising linear, curved, and tapered waveguide areas; and a current blocking layer formed around the optical waveguide to block a flow of current out of the active layer, wherein the linear and curved waveguide areas have a single buried hetero (BH) structure, and the tapered waveguide area has a dual BH structure.

    摘要翻译： 提供了反射半导体光放大器（R-SOA）和超发光二极管（SLD）。 R-SOA包括：基板; 包括下包层，独立于光的偏振的有源层和顺序地堆叠在基板上的上包层的光波导，所述光波导包括线性，弯曲和锥形的波导区域; 以及形成在所述光波导周围的电流阻挡层，以阻挡所述有源层中的电流流动，其中所述线性和弯曲波导区域具有单个埋入异质（BH）结构，并且所述锥形波导区域具有双BH结构。

    Optical vision chip (OVC) and image recognition method using the same
    10.
    发明授权
    Optical vision chip (OVC) and image recognition method using the same 失效
    光学视觉芯片（OVC）和图像识别方法使用相同

    公开(公告)号：US08000537B2

    公开(公告)日：2011-08-16

    申请号：US11930507

    申请日：2007-10-31

    申请人： Sahnggi Park ,  Won Pil Yu ,  Kwang Ryong Oh

    发明人： Sahnggi Park ,  Won Pil Yu ,  Kwang Ryong Oh

    IPC分类号： G06K9/74

    CPC分类号： G06K9/74

    摘要： Provided are an optical vision chip (OVC) and an image recognition method using the OVC. The OVC includes: a first display displaying an object image; a second display displaying a standard model image; and an optical sensor optically or electrically coupling the object image and the standard model image respectively displayed on the first and second displays and outputting a difference between the object image and the standard model image as an electrical signal.

    摘要翻译： 提供了一种光学视觉芯片（OVC）和使用OVC的图像识别方法。 OVC包括：显示对象图像的第一显示; 显示标准模型图像的第二显示器; 以及光学或电学耦合分别显示在第一和第二显示器上的对象图像和标准模型图像的光学传感器，并且将对象图像和标准模型图像之间的差作为电信号输出。