公开(公告)号：US20230307323A1

公开(公告)日：2023-09-28

申请号：US17901812

申请日：2022-09-01

Applicant: KIOXIA CORPORATION

Inventor： Hiroshi NAKAKI ,  Megumi ISHIDUKI

IPC: H01L23/48 ,  G11C16/04 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11582 ,  H01L27/1157 ,  H01L27/11565

CPC classification number: H01L23/481 ,  G11C16/0483 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11582 ,  H01L27/1157 ,  H01L27/11565

Abstract: A semiconductor storage device includes a stacked body in which conductive and insulating layers are alternately stacked in a first direction, conductive lines extending along a second direction intersecting the first direction and arranged along a third direction intersecting the first and second directions, insulators extending along the first and third directions in the body, arranged along the second direction, and dividing conductive layers, columnar bodies extending along the first direction and arranged along the second direction between insulators, each columnar body including a semiconductor body forming memory cells, and vias each connected between a conductive line and a corresponding columnar body. The conductive lines include first through fourth lines, and the columnar bodies include first through fourth bodies, arranged in this order. When viewed from the first direction, the first through fourth columnar bodies respectively overlap and are electrically connected to the first, third, second, and fourth lines.

公开(公告)号：US20210296277A1

公开(公告)日：2021-09-23

申请号：US17010196

申请日：2020-09-02

Applicant: Kioxia Corporation

Inventor： Jun IIJIMA ,  Hiroshi NAKAKI

IPC: H01L23/00 ,  H01L21/78 ,  H01L25/18 ,  H01L25/00

Abstract: In one embodiment, a semiconductor wafer includes a first substrate, a first insulator provided on the first substrate, and a plurality of first pads provided in the first insulator. The wafer further includes a second insulator provided on the first insulator, a plurality of second pads provided on the first pads in the second insulator, a stacked film alternately including a plurality of first insulating layers and a plurality of second insulating layers provided in the second insulator, and a second substrate provided on the second insulator. Furthermore, the first insulator and the second insulator are connected to each other between an edge face of the first insulator and an edge face of the second insulator, and the second insulator intervenes between the first insulator and the stacked film at the edge faces of the first and second insulators.