公开(公告)号：US10677586B2

公开(公告)日：2020-06-09

申请号：US16047818

申请日：2018-07-27

Applicant: KLA-TENCOR CORPORATION

Inventor： John Hench ,  Andrei Veldman

IPC: G01N21/94 ,  G01B11/06 ,  G01N23/083 ,  G06T9/20 ,  G01N21/95

Abstract: The embodiments disclosed herein can enable a target on a semiconductor wafer to be reconstructed and/or imaged. A surface of a target on a semiconductor wafer is measured using a wafer metrology tool. A voxel map of the surface is fixed to match geometry measurements and using scattering density of expected materials. Uniform scaling of the scattering density of all fixed surface voxels can occur.

公开(公告)号：US20200080836A1

公开(公告)日：2020-03-12

申请号：US16047818

申请日：2018-07-27

Applicant: KLA-TENCOR CORPORATION

Inventor： John Hench ,  Andrei Veldman

IPC: G01B11/06 ,  G01N21/95 ,  G06T9/20 ,  G01N23/083

Abstract: The embodiments disclosed herein can enable a target on a semiconductor wafer to be reconstructed and/or imaged. A surface of a target on a semiconductor wafer is measured using a wafer metrology tool. A voxel map of the surface is fixed to match geometry measurements and using scattering density of expected materials. Uniform scaling of the scattering density of all fixed surface voxels can occur.

公开(公告)号：US10481111B2

公开(公告)日：2019-11-19

申请号：US15789992

申请日：2017-10-21

Applicant: KLA-Tencor Corporation

Inventor： John Hench ,  Antonio Gellineau ,  Nikolay Artemiev ,  Joseph A. Di Regolo

IPC: G01N23/20 ,  G01N23/201 ,  G01N23/083 ,  G21K1/06

Abstract: Methods and systems for calibrating the location of x-ray beam incidence onto a specimen in an x-ray scatterometry metrology system are described herein. The precise location of incidence of the illumination beam on the surface of the wafer is determined based on occlusion of the illumination beam by two or more occlusion elements. The center of the illumination beam is determined based on measured values of transmitted flux and a model of the interaction of the beam with each occlusion element. The position of the axis of rotation orienting a wafer over a range of angles of incidence is adjusted to align with the surface of wafer and intersect the illumination beam at the measurement location. A precise offset value between the normal angle of incidence of the illumination beam relative to the wafer surface and the zero angle of incidence as measured by the specimen positioning system is determined.

公开(公告)号：US20180113084A1

公开(公告)日：2018-04-26

申请号：US15789992

申请日：2017-10-21

Applicant: KLA-Tencor Corporation

Inventor： John Hench ,  Antonio Gellineau ,  Nikolay Artemiev ,  Joseph A. Di Regolo

IPC: G01N23/201 ,  G01N23/083

CPC classification number: G01N23/201 ,  G01N23/083 ,  G01N23/20083 ,  G01N2223/054 ,  G01N2223/303 ,  G21K1/067

Abstract: Methods and systems for calibrating the location of x-ray beam incidence onto a specimen in an x-ray scatterometry metrology system are described herein. The precise location of incidence of the illumination beam on the surface of the wafer is determined based on occlusion of the illumination beam by two or more occlusion elements. The center of the illumination beam is determined based on measured values of transmitted flux and a model of the interaction of the beam with each occlusion element. The position of the axis of rotation orienting a wafer over a range of angles of incidence is adjusted to align with the surface of wafer and intersect the illumination beam at the measurement location. A precise offset value between the normal angle of incidence of the illumination beam relative to the wafer surface and the zero angle of incidence as measured by the specimen positioning system is determined.