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11.
公开(公告)号:US20230230818A1
公开(公告)日:2023-07-20
申请号:US18183090
申请日:2023-03-13
Applicant: Kokusai Electric Corporation
Inventor: Tetsuaki Inada , Junya Konishi , Masaki Murobayashi , Takeshi Yasui , Takeo Sato
IPC: H01J37/32
CPC classification number: H01J37/32834 , H01J37/321 , H01J37/32449 , H01J37/32522 , H01J37/32743 , H01J2237/182 , H01J2237/186 , H01J2237/188 , H01J2237/334 , H01J2237/24585
Abstract: According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process vessel in which a substrate is processed; an outer vessel configured to cover an outer circumference of the process vessel; a gas flow path provided between the outer vessel and the outer circumference of the process vessel; an exhaust path in communication with the gas flow path; an adjusting valve configured to be capable of adjusting a conductance of the exhaust path; a first exhaust apparatus provided on the exhaust path downstream of the adjusting valve; a pressure sensor configured to measure an inner pressure of the outer vessel; and a controller configured to be capable of adjusting an exhaust volume flow rate of the first exhaust apparatus by controlling the first exhaust apparatus based on a pressure measured by the pressure sensor.