公开(公告)号：US20240105423A1

公开(公告)日：2024-03-28

申请号：US18527833

申请日：2023-12-04

Applicant: Kokusai Electric Corporation

Inventor： Takeshi Yasui ,  Katsunori Funaki ,  Masaki Murobayashi ,  Koichiro Harada

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/308

CPC classification number: H01J37/3211 ,  H01J37/3244 ,  H01L21/02247 ,  H01L21/308 ,  H01J2237/24564 ,  H01J2237/334

Abstract: There is provided a plasma vessel in which a process gas is plasma-excited; a substrate process chamber which is in communication with the plasma vessel; a gas supply system supplying the process gas; and a coil installed to wind around an outer periphery of the plasma vessel and supplied with high-frequency power, wherein the coil is installed such that: a distance from an inner periphery of the coil to an inner periphery of the plasma vessel at a predetermined position on the coil is different from a distance from the inner periphery of the coil to the inner periphery of the plasma vessel at another position on the coil; and a distance from the inner periphery of the coil to the inner periphery of the plasma vessel at a position at which an amplitude of a standing wave of a voltage applied to the coil is maximized is maximized.

公开(公告)号：USD981970S1

公开(公告)日：2023-03-28

申请号：US29806527

申请日：2021-09-03

Applicant: KOKUSAI ELECTRIC CORPORATION

Designer： Tetsuaki Inada ,  Takeshi Yasui

公开(公告)号：US20250095969A1

公开(公告)日：2025-03-20

申请号：US18884724

申请日：2024-09-13

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Takeshi Yasui ,  Yukinori Aburatani

IPC: H01J37/32

Abstract: There is provided a technique that includes: a mounting table configured to be capable of mounting a substrate on the mounting table; a heater located above the mounting table and configured to radiate heat rays toward the substrate mounted on the mounting table to heat the substrate; a process container disposed below the heater and configured to accommodate the mounting table, wherein at least a portion of the process container, which is located adjacent to the heater, is made of opaque quartz; and a sealer configured such that transmission of heat rays reflected from the substrate to the sealer is suppressed by the at least a portion of the process container and airtightness between the process container and the heater is maintained by a seal.

公开(公告)号：US12249485B2

公开(公告)日：2025-03-11

申请号：US18527833

申请日：2023-12-04

Applicant: Kokusai Electric Corporation

Inventor： Takeshi Yasui ,  Katsunori Funaki ,  Masaki Murobayashi ,  Koichiro Harada

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/308

Abstract: There is provided a plasma vessel in which a process gas is plasma-excited; a substrate process chamber which is in communication with the plasma vessel; a gas supply system supplying the process gas; and a coil installed to wind around an outer periphery of the plasma vessel and supplied with high-frequency power, wherein the coil is installed such that: a distance from an inner periphery of the coil to an inner periphery of the plasma vessel at a predetermined position on the coil is different from a distance from the inner periphery of the coil to the inner periphery of the plasma vessel at another position on the coil; and a distance from the inner periphery of the coil to the inner periphery of the plasma vessel at a position at which an amplitude of a standing wave of a voltage applied to the coil is maximized is maximized.

公开(公告)号：US11905596B2

公开(公告)日：2024-02-20

申请号：US17484586

申请日：2021-09-24

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Teruo Yoshino ,  Takeshi Yasui ,  Masaki Murobayashi ,  Koichiro Harada ,  Tadashi Terasaki ,  Masanori Nakayama

IPC: H01J37/32 ,  C23C16/505 ,  H05H1/46 ,  C23C16/44 ,  C23C16/52 ,  C23C16/458 ,  H01L21/02

CPC classification number: C23C16/505 ,  C23C16/44 ,  C23C16/4583 ,  C23C16/52 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32174 ,  H01J37/32568 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02274 ,  H05H1/46

Abstract: A substrate processing apparatus comprising: a substrate process chamber having a plasma generation space where a processing gas is plasma-excited and a substrate processing space communicating with the plasma generation space; a substrate mounting table installed inside the substrate processing space and for mounting a substrate; an inductive coupling structure provided with a coil installed to be wound around an outer periphery of the plasma generation space; a substrate support table elevating part for raising and lowering the substrate mounting table; a gas supply part for supplying the processing gas to the plasma generation space; and a controller for controlling the substrate support table elevating part, based on a power value of a high-frequency power supplied to the coil, so that the substrate mounted on the substrate mounting table is positioned at a target height according to the power value and spaced apart from a lower end of the coil.

公开(公告)号：US11837440B2

公开(公告)日：2023-12-05

申请号：US16821511

申请日：2020-03-17

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Takeshi Yasui ,  Katsunori Funaki ,  Masaki Murobayashi ,  Koichiro Harada

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/308

CPC classification number: H01J37/3211 ,  H01J37/3244 ,  H01L21/02247 ,  H01L21/308 ,  H01J2237/24564 ,  H01J2237/334

Abstract: There is provided a plasma vessel in which a process gas is plasma-excited; a substrate process chamber which is in communication with the plasma vessel; a gas supply system supplying the process gas; and a coil installed to wind around an outer periphery of the plasma vessel and supplied with high-frequency power, wherein the coil is installed such that: a distance from an inner periphery of the coil to an inner periphery of the plasma vessel at a predetermined position on the coil is different from a distance from the inner periphery of the coil to the inner periphery of the plasma vessel at another position on the coil; and a distance from the inner periphery of the coil to the inner periphery of the plasma vessel at a position at which an amplitude of a standing wave of a voltage applied to the coil is maximized is maximized.

公开(公告)号：US11155922B2

公开(公告)日：2021-10-26

申请号：US16136943

申请日：2018-09-20

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Teruo Yoshino ,  Takeshi Yasui ,  Masaki Murobayashi ,  Koichiro Harada ,  Tadashi Terasaki ,  Masanori Nakayama

IPC: H01L21/02 ,  C23C16/52 ,  C23C16/505 ,  H05H1/46 ,  H01J37/32 ,  C23C16/458 ,  C23C16/44

Abstract: A method of manufacturing a semiconductor device includes: loading a substrate into a substrate process chamber having a plasma generation space in which a processing gas is plasma-excited and a substrate process space communicating with the plasma generation space; mounting the substrate on a substrate mounting table installed inside the substrate process space; adjusting a height of the substrate mounting table so that the substrate is located at a height lower than a lower end of a coil, the coil configured to wind around an outer periphery of the plasma generation space so as to have a diameter larger than a diameter of the substrate; supplying the processing gas to the plasma generation space; plasma-exciting the processing gas supplied to the plasma generation space by supplying a high-frequency power to the coil to resonate the coil; and processing the substrate mounted on the substrate mounting table by the plasma-excitation.

公开(公告)号：US12230474B2

公开(公告)日：2025-02-18

申请号：US17576216

申请日：2022-01-14

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Takeshi Yasui ,  Tetsuaki Inada ,  Masaki Murobayashi

IPC: H01J37/32 ,  C23C16/52 ,  H01L21/308 ,  H01L21/67

Abstract: There is included a process container; a gas supply system; and a coil provided with a section between a first grounding point and a second grounding point of the coil so as to be spirally wound a plurality of times along an outer periphery of the process container, wherein the coil is configured so that a coil separation distance, which is a distance from an inner periphery of the coil to an inner periphery of the process container, in a partial section of a first winding section, which is a section where the coil winds once along the outer periphery of the process container in a direction from the first grounding point toward the second grounding point, is longer than a coil separation distance in another partial section of the first winding section continuous with the partial section of the first winding section.

公开(公告)号：US11869748B2

公开(公告)日：2024-01-09

申请号：US17014684

申请日：2020-09-08

Applicant: Kokusai Electric Corporation

Inventor： Takeshi Yasui ,  Katsunori Funaki ,  Yasutoshi Tsubota ,  Koichiro Harada

IPC: H01J37/32 ,  C23C14/00 ,  C23C14/06 ,  C23C16/44

CPC classification number: H01J37/321 ,  H01J37/32697 ,  C23C14/0068 ,  C23C14/0641 ,  C23C16/4401 ,  H01J37/3244 ,  H01J37/32504 ,  H01J2237/0262

Abstract: Described herein is a technique capable of suppressing sputtering on an inner peripheral surface of a process vessel when a process gas is plasma-excited in the process vessel. According to one aspect thereof, a substrate processing apparatus includes: a process vessel accommodating a process chamber where a process gas is excited into plasma; a gas supplier supplying the process gas into the process chamber; a coil wound around an outer peripheral surface of the process vessel and spaced apart therefrom, wherein a high frequency power is supplied to the coil; and an electrostatic shield disposed between the outer peripheral surface and the coil, wherein the electrostatic shield includes: a partition extending in a circumferential direction to partition between a part of the coil and the outer peripheral surface; and an opening extending in the circumferential direction and opened between another part of the coil and the outer peripheral surface.

公开(公告)号：US12195854B2

公开(公告)日：2025-01-14

申请号：US18419890

申请日：2024-01-23

Applicant: Kokusai Electric Corporation

Inventor： Teruo Yoshino ,  Takeshi Yasui ,  Masaki Murobayashi ,  Koichiro Harada ,  Tadashi Terasaki ,  Masanori Nakayama

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/458 ,  C23C16/505 ,  C23C16/52 ,  H01L21/02 ,  H05H1/46

Abstract: A substrate processing apparatus comprising: a substrate process chamber having a plasma generation space where a processing gas is plasma-excited and a substrate processing space communicating with the plasma generation space; a substrate mounting table installed inside the substrate processing space and for mounting a substrate; an inductive coupling structure provided with a coil installed to be wound around an outer periphery of the plasma generation space; a substrate support table elevating part for raising and lowering the substrate mounting table; a gas supply part for supplying the processing gas to the plasma generation space; and a controller for controlling the substrate support table elevating part, based on a power value of a high-frequency power supplied to the coil, so that the substrate mounted on the substrate mounting table is positioned at a target height according to the power value and spaced apart from a lower end of the coil.