摘要:
An electron microscope includes a charged particle beam generator, a detector, a film and a bearing unit. The charged particle beam generator generates a first charged particle beam to bomb an object. The detector detects a second charged particle from the object to form an image. The film disposes on downstream of charged particle beam generator and has a first surface and a second surface. A space between charged particle beam generator and the first surface of film is a vacuum environment. The bearing unit disposes at a side of second surface of film and has a bearing surface and a back surface. The object disposes on the bearing surface of the bearing unit and a distance between an analyzed surface of the object and the film is less than a predetermined spacing. A liquid space exists between the analyzed surface and the film to be filled a liquid.
摘要:
An x-ray analysis apparatus comprises an electron beam assembly for generating a focused electron beam within a first gas pressure environment. A sample assembly is used for retaining a sample within a second gas pressure environment such that the sample receives the electron beam from the electron beam assembly and such that the gas pressure in the second gas pressure environment is greater than the gas pressure within the first gas pressure environment. An x-ray detector is positioned so as to have at least one x-ray sensor element within the first gas pressure environment. The sensor element is mounted to a part of the electron beam assembly which is proximal to the sample assembly and further arranged in use to receive x-rays generated by the interaction between the electron beam and the sample.
摘要:
The invention relates to a charged particle lithography system for exposing a target. The system includes a charged particle beam generator for generating a charged particle beam; an aperture array (6) for forming a plurality of beamlets from the charged particle beam; and a beamlet projector (12) for projecting the beamlets onto a surface of the target. The charged particle beam generator includes a charged particle source (3) for generating a diverging charged particle beam; a collimator system (5a,5b,5c,5d; 72;300) for refracting the diverging charged particle beam; and a cooling arrangement (203) for removing heat from the collimator system, the cooling arrangement comprising a body surrounding at least a portion of the collimator system.
摘要:
The present disclosure relates to a gas field ion source comprising a housing, an electrically conductive tip arranged within the housing, a gas supply for supplying one or more gases to the housing, wherein the one or more gases comprise neon or a noble gas with atoms having a mass larger than neon, and an extractor electrode having a hole to permit ions generated in the neighborhood of the tip to pass through the hole. A surface of the extractor electrode facing the tip can be made of a material having a negative secondary ion sputter rate of less than 10−5 per incident neon ion.
摘要:
A sample storage container of the present invention includes: a storage container (100) that stores a sample (6) under an atmosphere different from an atmosphere of an outside; a diaphragm (10) through which a charged particle beam passes through or transmits; a sample stage (103) that is arranged inside the storage container (100) and that is capable of moving a relative position of the sample (6) to the diaphragm (10) in a horizontal direction and in a vertical direction under an atmospheric state where the atmospheric states inside the storage container and outside the storage container are different each other; and an operating section (104) that moves the sample stage (103) from an outside of the storage container (100), wherein the sample storage container is set in a state where the sample (6) is stored in a vacuum chamber of a charged particle beam apparatus.
摘要:
The present disclosure relates to a gas field ion source having a gun housing, an electrically conductive gun can base attached to the gun housing, an inner tube mounted to the gun can base, the inner tube being made of an electrically isolating ceramic, an electrically conductive tip attached to the inner tube, an outer tube mounted to the gun can base, the outer tube being made of an electrically isolating ceramic, and an extractor electrode attached to the outer tube. The extractor electrode can have an opening for the passage of ions generated in proximity to the electrically conductive tip.
摘要:
An electron-beam induced plasmas is utilized to establish a non-mechanical, electrical contact to a device of interest. This plasma source may be referred to as atmospheric plasma source and may be configured to provide a plasma column of very fine diameter and controllable characteristics. The plasma column traverses the atmospheric space between the plasma source into the atmosphere and the device of interest and acts as an electrical path to the device of interest in such a way that a characteristic electrical signal can be collected from the device. Additionally, by controlling the gases flowing into the plasma column the probe may be used for surface modification, etching and deposition.
摘要:
An interface, a scanning electron microscope and a method for observing an object that is positioned in a non-vacuum environment. The method includes: generating an electron beam in the vacuum environment; scanning a region of the object with the electron beam while the object is located below an object holder; wherein the scanning comprises allowing the electron beam to pass through an aperture of an aperture array, pass through an ultra thin membrane that seals the aperture, and pass through the object holder; wherein the ultra thin membrane withstands a pressure difference between the vacuum environment and the non-vacuum environment; and detecting particles generated in response to an interaction between the electron beam and the object.
摘要:
There are disclosed herein various implementations of a method and system for ion implantation at high temperature surface equilibrium conditions. The method may include situating a III-Nitride semiconductor body in a surface equilibrium chamber, establishing a gas pressure greater than or approximately equal to a surface equilibrium pressure of the III-Nitride semiconductor body, and heating the III-Nitride semiconductor body to an elevated implantation temperature in the surface equilibrium chamber while substantially maintaining the gas pressure. The method also includes implanting the III-Nitride semiconductor body in the surface equilibrium at the elevated implantation temperature chamber while substantially maintaining the gas pressure, the implanting being performed using an ion implanter interfacing with the surface equilibrium chamber.
摘要:
The disclosure relates to a method of operating a gas field ion beam system in which the gas field ion beam system comprises an external housing, an internal housing, arranged within the external housing, an electrically conductive tip arranged within the internal housing, a gas supply for supplying one or more gases to the internal housing, the gas supply having a tube terminating within the internal housing, and an extractor electrode having a hole to permit ions generated in the neighborhood of the tip to pass through the hole into the external housing. The method comprises the step of regularly heating the external housing, the internal housing, the electrically conductive tip, the tube and the extractor electrode to a temperature of above 100° C.