摘要:
A magnetic head assembly includes a magnetic recording head, a main magnetic pole, a head slider, a suspension and an actuator arm. The magnetic recording head includes a main magnetic pole having an air bearing surface facing a magnetic recording medium; and a stacked structure having, a first magnetic layer, a second magnetic layer, and an intermediate layer provided between the first magnetic layer and the second magnetic layer. A stacked plane of the stacked structure is inclined with respect to the air bearing surface. The magnetic recording head is mounted on the head slider. The head slider is mounted on one end of the suspension. The actuator arm is connected to the other end of the suspension.
摘要:
According to one embodiment, a magnetic recording head includes a main magnetic pole, a shield, and a stacked structure body. The shield is provided to oppose the main magnetic pole. The stacked structure body is provided between the main magnetic pole and the shield. The stacked structure body includes a first magnetic layer, a second magnetic layer, and an intermediate layer. The first magnetic layer has coercivity lower than a magnetic field applied from the main magnetic pole. A size of a film surface of the second magnetic layer is larger than a size of a film surface of the first magnetic layer. The intermediate layer is provided between the first magnetic layer and the second magnetic layer and is made of a nonmagnetic material. A current is configured to pass between the first magnetic layer and the second magnetic layer.
摘要:
A magnetic head assembly includes a magnetic recording head, a main magnetic pole, a head slider, a suspension and an actuator arm. The magnetic recording head includes a main magnetic pole having an air bearing surface facing a magnetic recording medium; and a stacked structure having, a first magnetic layer, a second magnetic layer, and an intermediate layer provided between the first magnetic layer and the second magnetic layer. A stacked plane of the stacked structure is inclined with respect to the air bearing surface. The magnetic recording head is mounted on the head slider. The head slider is mounted on one end of the suspension. The actuator arm is connected to the other end of the suspension.
摘要:
A spin torque oscillator includes an amorphous soft magnetic layer, a nonmagnetic layer and a hard magnetic layer. The nonmagnetic layer with a close-packed crystal structure is provided on the amorphous soft magnetic layer. The hard magnetic layer with a close-packed crystal structure and perpendicular magnetic anisotropy is provided on the nonmagnetic layer.
摘要:
A spin transfer (torque) oscillator (STO) with a non-magnetic spacer formed between a spin injection layer (SIL) and a field generation layer (FGL), and with an interfacial layer comprised of Fe(100-V)CoV where v is from 5 to 100 atomic % formed between the SIL and non-magnetic spacer is disclosed. A composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture is used to enhance perpendicular magnetic anisotropy (PMA) in the STO device. The interfacial layer quenches SIL oscillations and thereby stabilizes the SIL against FGL oscillations. The interfacial layer preferably has a thickness from 5 to 50 Angstroms and enhances amplitude (dR/R) in the STO device. The STO device may have a top SIL or bottom SIL configuration. The SIL is typically a laminated structure such as (Co/Ni)X where x is between 5 and 50.
摘要:
A spin torque oscillator includes an amorphous soft magnetic layer, a nonmagnetic layer and a hard magnetic layer. The nonmagnetic layer with a close-packed crystal structure is provided on the amorphous soft magnetic layer. The hard magnetic layer with a close-packed crystal structure and perpendicular magnetic anisotropy is provided on the nonmagnetic layer.
摘要:
A spin transfer (torque) oscillator (STO) with a non-magnetic spacer formed between a spin injection layer (SIL) and a field generation layer (FGL), and with an interfacial layer comprised of Fe(100-V)CoV where v is from 5 to 100 atomic % formed between the SIL and non-magnetic spacer is disclosed. A composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture is used to enhance perpendicular magnetic anisotropy (PMA) in the STO device. The interfacial layer quenches SIL oscillations and thereby stabilizes the SIL against FGL oscillations. The interfacial layer preferably has a thickness from 5 to 50 Angstroms and enhances amplitude (dR/R) in the STO device. The STO device may have a top SIL or bottom SIL configuration. The SIL is typically a laminated structure such as (Co/Ni)X where x is between 5 and 50.
摘要:
According to one embodiment, a magnetic recording head includes a main pole configured to apply a recording magnetic field perpendicular to a recording medium, a trailing-shield pole opposed to the main pole with a recording gap therebetween, a high-frequency oscillator between the main pole and the trailing-shield pole in the recording gap, configured to produce a high-frequency magnetic field, a magnetic seed layer between the main pole and the high-frequency oscillator and in contact with the main pole, and a highly oriented magnetic layer of a soft magnetic material superposed on the magnetic seed layer between the main pole and the high-frequency oscillator and in contact with the high-frequency oscillator.
摘要:
A magnetoresistance effect element of the dual spin valve type using a current-perpendicular-to-the-plane (CPP) system where a sensing current flows perpendicular to the stacked faces of a plurality of conductive layers, the magnetoresistance effect element comprises a first unit which includes a free layer and a first pinning layer, a second unit which includes the free layer shared with the first unit and a second pinning layer, a first current control layer which is provided in the first unit and limits the flow quantity of the sensing current, and a second current control layer which is provided in the second unit and limits the flow quantity of the sensing current.
摘要:
A magnetoresistance effect element of the dual spin valve type using a current-perpendicular-to-the-plane (CPP) system where a sensing current flows perpendicular to the stacked faces of a plurality of conductive layers, the magnetoresistance effect element comprises a first unit which includes a free layer and a first pinning layer, a second unit which includes the free layer shared with the first unit and a second pinning layer, a first current control layer which is provided in the first unit and limits the flow quantity of the sensing current, and a second current control layer which is provided in the second unit and limits the flow quantity of the sensing current.