公开(公告)号：US5258631A

公开(公告)日：1993-11-02

申请号：US884878

申请日：1992-05-18

申请人： Toshiyuki Usagawa ,  Kenji Hiruma ,  Masahiko Kawata ,  Shigeo Goto ,  Katsuhiko Mitani ,  Masao Yamane ,  Susumu Takahashi ,  Tomonori Tanoue ,  Yoshinori Imamura

发明人： Toshiyuki Usagawa ,  Kenji Hiruma ,  Masahiko Kawata ,  Shigeo Goto ,  Katsuhiko Mitani ,  Masao Yamane ,  Susumu Takahashi ,  Tomonori Tanoue ,  Yoshinori Imamura

IPC分类号： H01L21/18 ,  H01L21/285 ,  H01L21/331 ,  H01L21/335 ,  H01L27/06 ,  H01L29/737 ,  H01L29/778 ,  H01L29/06 ,  H01L29/167 ,  H01L29/30 ,  H01L31/072

CPC分类号： H01L29/66318 ,  H01L21/182 ,  H01L21/28587 ,  H01L27/0605 ,  H01L29/66462 ,  H01L29/7373 ,  H01L29/7787

摘要： This invention discloses a heterojunction type field effect transistor such as 2DEG-FET and a heterojunction type bipolar transistor such as 2DEG-HBT. The former is fabricated by applying to the formation of its source and drain regions a technique which causes the disorder of the heterojunction by introduction of an impurity such as by ion implantation or a technique which causes the disorder of the heterojunction by forming a film made of at least one kind of material selected from insulators, metals and semiconductors which have a different linear coefficient of thermal expansion from that of the material of a semiconductor substrate on the heterojunction semiconductor region which is to be disordered. The latter is fabricated by applying either of the techniques described above to a base ohmic contact region. These semiconductor devices can reduce the source-gate resistance and the parasitic base resistance. The invention discloses also the structure of the ohmic contact layer which has a trench on the surface thereof and is particularly effective for reducing the source-gate parasitic resistance.

摘要翻译： 本发明公开了一种异质结型场效应晶体管，例如2DEG-FET和异质结型双极晶体管，例如2DEG-HBT。 前者通过应用其源极和漏极区域的形成来制造通过引入杂质例如通过离子注入引起异质结的紊乱的技术或通过形成由 选自绝缘体，金属和半导体的至少一种材料，其具有不同于待混杂的异质结半导体区域上的半导体衬底的材料的线性热膨胀系数。 后者通过将上述技术中的任一种应用于基极欧姆接触区域来制造。 这些半导体器件可以降低源极栅极电阻和寄生基极电阻。 本发明还公开了欧姆接触层的结构，其在其表面上具有沟槽，并且对于减小源极寄生电阻特别有效。

公开(公告)号：US20060144518A1

公开(公告)日：2006-07-06

申请号：US11366621

申请日：2006-03-03

申请人： Tetsunori Kaji ,  Shinichi Tachi ,  Toru Otsubo ,  Katsuya Watanabe ,  Katsuhiko Mitani ,  Junichi Tanaka

发明人： Tetsunori Kaji ,  Shinichi Tachi ,  Toru Otsubo ,  Katsuya Watanabe ,  Katsuhiko Mitani ,  Junichi Tanaka

IPC分类号： C23F1/00

CPC分类号： H01J37/32082 ,  H01J37/32623 ,  H01J37/32678 ,  H01L21/67069

摘要： A plasma processing apparatus includes a vacuum processing chamber having a pair of opposing electrodes for plasma generation, one electrode serving as a sample table for a sample including an insulator film. An electrostatic adsorption film is arranged at the sample table electrode to supply a thermal conductive gas between the film and the sample rear surface. A pressure reducing element is also provided. In addition, arrangements are provided to set a gas pressure within said vacuum processing chamber to 0.5 to 4.0 Pa and to apply a high frequency power of 30 MHz to 200 MHz between the electrodes. An electrode cover is disposed at the other electrode, and a clearance between the electrodes is 30 mm to 100 mm. The electrode cover includes fine apertures to introduce a fluorine-containing etching gas, and a power supply accelerates ions in the plasma

摘要翻译： 等离子体处理装置包括具有一对用于等离子体产生的相对电极的真空处理室，一个用作用于包括绝缘膜的样品的样品台的电极。 在样品台电极处设置静电吸附膜，以在膜和样品后表面之间提供导热气体。 还提供减压元件。 此外，提供了将所述真空处理室内的气体压力设定为0.5〜4.0Pa并在电极之间施加30MHz〜200MHz的高频功率的结构。 电极盖设置在另一个电极处，电极间的间隙为30mm至100mm。 电极盖包括用于引入含氟蚀刻气体的细孔，并且电源加速等离子体中的离子

公开(公告)号：US06245190B1

公开(公告)日：2001-06-12

申请号：US09048075

申请日：1998-03-26

申请人： Toshio Masuda ,  Katsuhiko Mitani ,  Tetsunori Kaji ,  Jun'ichi Tanaka ,  Katsuya Watanabe ,  Shigeru Shirayone ,  Toru Otsubo ,  Ichiro Sasaki ,  Hideshi Fukumoto ,  Makoto Koizumi

发明人： Toshio Masuda ,  Katsuhiko Mitani ,  Tetsunori Kaji ,  Jun'ichi Tanaka ,  Katsuya Watanabe ,  Shigeru Shirayone ,  Toru Otsubo ,  Ichiro Sasaki ,  Hideshi Fukumoto ,  Makoto Koizumi

IPC分类号： H05H146

CPC分类号： H01J37/32091 ,  H01J37/32082 ,  H01J37/32165 ,  H01J37/32623 ,  H01J37/3266 ,  H01J37/32678

摘要： A plasma processing apparatus and a method therefor which can achieve a preferred process rate, a fine pattern process capability, a selectivity and uniformity of processing at the same time compatibly for a large size wafer, which effects are achieved by controlling the plasma state and the dissociation state of etching gas through control of the electron resonance through application of a magnetic field thereto. A high frequency power at 20-300 MHz is applied across a pair of electrodes in a vacuum process chamber, and a magnetic field is formed parallel to the plane of the electrodes in the space between the electrodes. By controlling the intensity of the magnetic field in a range of 100 gauss or smaller, formation of electron cyclotron resonance and electron sheath resonance occurring from interaction between the electrical field and the magnetic field in the electrode sheath portion is controlled. Thereby, the plasma state, i.e., the electron density, electron energy distribution and dissociation state of the process gas in the plasma, can be controlled. The magnetic field is generated by a plurality of coils, an outer shield, and pendant yoke to form magnetic field parallel to the plane of the electrodes in the space between the upper and the bottom electrodes.

摘要翻译： 一种等离子体处理装置及其方法，其能够通过控制等离子体状态和等离子体状态来实现对于大尺寸晶片同时实现优选的处理速率，精细图案处理能力，同时处理的选择性和均匀性， 通过对其施加磁场来控制电子共振来蚀刻气体的解离状态。 在真空处理室中的一对电极上施加20-300MHz的高频功率，并且在电极之间的空间中形成平行于电极平面的磁场。 通过控制100高斯或更小范围内的磁场的强度，控制由电场鞘部分中的电场和磁场之间的相互作用产生的电子回旋共振和电子鞘共振的形成。 由此，可以控制等离子体状态，即等离子体中的处理气体的电子密度，电子能量分布和解离状态。 磁场由多个线圈，外屏蔽和悬挂磁轭产生，以在上电极和下电极之间的空间中形成平行于电极平面的磁场。

公开(公告)号：US5381027A

公开(公告)日：1995-01-10

申请号：US134622

申请日：1993-10-12

申请人： Toshiyuki Usagawa ,  Kenji Hiruma ,  Masahiko Kawata ,  Shigeo Goto ,  Katsuhiko Mitani ,  Masao Yamane ,  Susumu Takahashi ,  Tomonori Tanoue ,  Yoshinori Imamura

发明人： Toshiyuki Usagawa ,  Kenji Hiruma ,  Masahiko Kawata ,  Shigeo Goto ,  Katsuhiko Mitani ,  Masao Yamane ,  Susumu Takahashi ,  Tomonori Tanoue ,  Yoshinori Imamura

IPC分类号： H01L21/18 ,  H01L21/285 ,  H01L21/331 ,  H01L21/335 ,  H01L27/06 ,  H01L29/737 ,  H01L29/778 ,  H01L29/804 ,  H01L29/784

CPC分类号： H01L29/66318 ,  H01L21/182 ,  H01L21/28587 ,  H01L27/0605 ,  H01L29/66462 ,  H01L29/7373 ,  H01L29/7787

摘要： This invention discloses a heterojunction type field effect transistor such as 2DEG-FET and a heterojunction type bipolar transistor such as 2DEG-HBT. The former is fabricated by applying to the formation of its source and drain regions a technique which causes the disorder of the heterojunction by intoduction of an impurity such as by ion implantation or a technique which causes the disorder of the heterojunction by forming a film made of at least one kind of material selected from insulators, metals and semiconductors which have a different linear coefficient of thermal expansion from that of the material of a semiconductor substrate on the heterojunction semiconductor region which is to be disordered. The latter is fabricated by applying either of the techniques described above to a base ohmic contact region. These semiconductor devices can reduce the source-gate resistance and the parasitic base resistance. The invention discloses also the structure of the ohmic contact layer which has a trench on the surface thereof and is particularly effective for reducing the source-gate parasitic resistance.

摘要翻译： 本发明公开了一种异质结型场效应晶体管，例如2DEG-FET和异质结型双极晶体管，例如2DEG-HBT。 前者通过应用于其源极和漏极区域的形成来制造通过诸如通过离子注入引起杂质的异质结的紊乱或通过形成由 选自绝缘体，金属和半导体的至少一种材料，其具有不同于待混杂的异质结半导体区域上的半导体衬底的材料的线性热膨胀系数。 后者通过将上述技术中的任一种应用于基极欧姆接触区域来制造。 这些半导体器件可以降低源极栅极电阻和寄生基极电阻。 本发明还公开了欧姆接触层的结构，其在其表面上具有沟槽，并且对于减小源极寄生电阻特别有效。

公开(公告)号：US5019524A

公开(公告)日：1991-05-28

申请号：US401506

申请日：1989-08-30

申请人： Katsuhiko Mitani ,  Tomonori Tanoue ,  Chushiro Kusano ,  Masayoshi Kobayashi ,  Susumu Takahashi

发明人： Katsuhiko Mitani ,  Tomonori Tanoue ,  Chushiro Kusano ,  Masayoshi Kobayashi ,  Susumu Takahashi

IPC分类号： H01L29/205 ,  H01L21/331 ,  H01L29/10 ,  H01L29/73 ,  H01L29/737

CPC分类号： H01L29/66318 ,  H01L29/1004 ,  H01L29/7371 ,  Y10S148/01 ,  Y10S148/072 ,  Y10S148/084

摘要： Disclosed is a semiconductor device including a heterojunction bipolar transistor in which the front surface of a base layer and the surface of an emitter-base junction are covered with a high-resistivity layer of compound semiconductor containing at least one constituent element common to an emitter layer and the base layer.

公开(公告)号：US4979009A

公开(公告)日：1990-12-18

申请号：US415708

申请日：1989-09-29

申请人： Chushiro Kusano ,  Tomonori Tanoue ,  Katsuhiko Mitani

发明人： Chushiro Kusano ,  Tomonori Tanoue ,  Katsuhiko Mitani

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L29/205 ,  H01L29/737

CPC分类号： H01L29/7371

摘要： 2A heterojunction bipolar transistor is disclosed in which a region of a base layer which extends in the vicinity of the interface between the base layer and an emitter layer is doped with an impurity at a higher concentration than that in the inside of the base layer to thereby form a built-in field by which carriers injected from the emitter are caused to drift to the inside of the base layer. In the transistor having this structure, the current gain does not depend on the emitter area, and it is possible to obtain a large current gain with a small emitter area.

摘要翻译： 2A公开了其中在基极层和发射极层之间的界面附近延伸的基极层的区域以比基底层内侧的浓度更高的浓度掺杂杂质的异质结双极晶体管，由此 形成内置的场，通过该场，使从发射器注入的载流子漂移到基层的内部。 在具有这种结构的晶体管中，电流增益不取决于发射极面积，并且可以获得具有小发射极面积的大电流增益。