公开(公告)号：US20050121697A1

公开(公告)日：2005-06-09

申请号：US10999050

申请日：2004-11-29

申请人： Minoru Ishida ,  Katsuhisa Aratani ,  Akira Kouchiyama ,  Tomohito Tsushima

发明人： Minoru Ishida ,  Katsuhisa Aratani ,  Akira Kouchiyama ,  Tomohito Tsushima

IPC分类号： G11C16/04 ,  G11C13/02 ,  H01L27/10 ,  H01L31/109 ,  H01L45/00

CPC分类号： G11C13/0011 ,  G11C13/0009 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/15 ,  G11C2213/34 ,  G11C2213/51 ,  G11C2213/56 ,  G11C2213/72 ,  G11C2213/79 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1266 ,  H01L45/144 ,  H01L45/146

摘要： A storage device includes a first electrode, a second electrode facing the first electrode, an inter-electrode material layer provided between the first electrode and the second electrode, and a voltage application unit applying a predetermined voltage to the first and the second electrodes. Furthermore, an oxidation-reduction active material changeable into an electrode reaction inhibition layer by applying voltages to the first and the second electrodes is contained in a region that is covered by an electric field, the electric field being generated when the voltage is applied, and the electrode reaction inhibition layer is either formed along an interface region between the second electrode and the inter-electrode material layer, or changes an area thereof, or disappears depending on an application condition of the voltage to the first and the second.

摘要翻译： 存储装置包括第一电极，面对第一电极的第二电极，设置在第一电极和第二电极之间的电极间材料层，以及向第一和第二电极施加预定电压的电压施加单元。 此外，通过向第一和第二电极施加电压而可变化为电极反应抑制层的氧化还原活性物质被包含在被电场覆盖的区域中，电场在施加电压时产生，并且 电极反应抑制层沿着第二电极和电极间材料层之间的界面区域形成，或者改变其面积，或者根据第一和第二电压的施加条件而消失。

公开(公告)号：US6063468A

公开(公告)日：2000-05-16

申请号：US66159

申请日：1998-04-24

申请人： Katsuhisa Aratani ,  Toshiyuki Kashiwagi ,  Minoru Kikuchi

发明人： Katsuhisa Aratani ,  Toshiyuki Kashiwagi ,  Minoru Kikuchi

IPC分类号： G11B7/24 ,  G11B7/254 ,  B32B3/00

CPC分类号： G11B7/252 ,  G11B7/2548 ,  G11B2007/25414 ,  G11B2007/25417 ,  Y10S428/913 ,  Y10S430/146 ,  Y10T428/21

摘要： An improved optical recording medium is provided, and includes a surface of the optical recording medium having at least pits and grooves formed therein, a recording layer formed adjacent the surface of said optical recording medium, and a light transmissive layer formed adjacent the recording layer. Information is recorded and/or reproduced by irradiation of light from an optical pickup employing an objective lens having a numerical aperture of 0.7 or larger through the light transmission layer. At least a surface layer of said light transmissive layer is formed of a material having a Young's modulus of 70 GPa or larger thereby greatly reducing or eliminating scratches from the surface of the optical recording medium while allowing for an increase in the storage capacity of the optical storage medium.

摘要翻译： 提供了一种改进的光学记录介质，并且包括至少具有形成在其中的凹坑和凹槽的光学记录介质的表面，邻近所述光学记录介质的表面形成的记录层以及与记录层相邻形成的透光层。 信息通过照射通过光透射层的数值孔径为0.7以上的物镜的光拾取器的光记录和/或再生。 至少所述透光层的表面层由杨氏模量为70GPa以上的材料形成，从而大大减少或消除了光记录介质表面的划伤，同时允许光学存储容量的增加 存储介质。

公开(公告)号：US5987002A

公开(公告)日：1999-11-16

申请号：US918051

申请日：1997-08-25

申请人： Atsushi Fukumoto ,  Katsuhisa Aratani ,  Shin Masuhara

发明人： Atsushi Fukumoto ,  Katsuhisa Aratani ,  Shin Masuhara

IPC分类号： G11B11/10 ,  G11B7/007 ,  G11B7/135 ,  G11B11/105 ,  G11B7/00

CPC分类号： G11B7/24079 ,  G11B11/10543 ,  G11B11/10584 ,  G11B7/00718 ,  G11B7/1365 ,  G11B7/1369

摘要： A magneto-optical recording medium formed to record an information signal on both of lands and grooves provides a capability of reproducing an excellent signal with a small magnitude of crosstalk even by narrowing a track interval more. In the magneto-optical recording medium, an optical depth d of each groove is in the range of (1/12+n/2).lambda..ltoreq.d.ltoreq.(1/6+n/2).lambda. or {-1/6+(n+1)/2}.lambda..ltoreq.d.ltoreq.{-1/12+(n+1)/2}.lambda., where .lambda. is a wavelength of a light beam to be applied onto the recording medium and n is an integer of 0 or more. When reproducing the information signal from the medium, a phase difference is given to the return light from the medium before detecting the return light.

摘要翻译： 形成为在陆地和凹槽两者上记录信息信号的磁光记录介质提供了即使通过更窄地缩小轨道间隔，也可以再现具有小幅度串扰的优良信号的能力。 在磁光记录介质中，每个凹槽的光学深度d在（1/12 + n / 2）λ/ d =（1/6 + n / 2）λ或{ - 1/6 +（n + 1）/ 2}λ

公开(公告)号：US5694379A

公开(公告)日：1997-12-02

申请号：US697282

申请日：1996-08-27

申请人： Katsuhisa Aratani ,  Atsushi Fukumoto ,  Tatsuya Narahara ,  Shin Masuhara

发明人： Katsuhisa Aratani ,  Atsushi Fukumoto ,  Tatsuya Narahara ,  Shin Masuhara

IPC分类号： G11B11/10 ,  G11B7/007 ,  G11B11/105 ,  G11B11/00

CPC分类号： G11B7/24079 ,  G11B11/10506 ,  G11B11/10582

摘要： A magneto-optical recording medium capable of exhibiting a high track density and preventing occurrence of a crosstalk, is disclosed which is adapted for magneto-optically recording an information signal thereon and reproducing the signal therefrom by radiating a read or write beam through an objective lens, and includes a transparent substrate provided, on a partial or entire surface thereof, with spiral or concentric guide grooves and signal-recording regions located between the spiral or concentric guide grooves; wherein the magneto-optical recording medium is so constructed as to satisfy the following conditions (1) to (4): 0.431(.lambda./NA)

摘要翻译： 公开了一种能够呈现高轨道密度并防止串扰发生的磁光记录介质，其适用于在其上磁信息记录信息信号并通过辐射通过物镜的读或写光束再现信号 并且包括在其部分或整个表面上设置有位于螺旋或同心引导槽之间的螺旋或同心引导槽和信号记录区域的透明基板; 其中磁光记录介质被构造成满足以下条件（1）至（4）：0.431（λ/ NA） / = 0.48-0.53TP /（ λ/ NA）（4）其中W表示导槽的宽度; λ表示用于再现存储在磁光记录介质上的信息信号的读取光的波长（μm）; NA表示物镜的数值孔径; TP表示导槽的轨距（μm）; d表示导槽的深度（nm）; 并且ns表示透明基板的折射率。

公开(公告)号：US5243590A

公开(公告)日：1993-09-07

申请号：US783167

申请日：1991-10-28

申请人： Katsuhisa Aratani

发明人： Katsuhisa Aratani

IPC分类号： G11B7/24 ,  G11B7/0055 ,  G11B7/243 ,  G11B7/257

CPC分类号： G11B7/243 ,  G11B7/00557 ,  G11B7/257 ,  G11B2007/24314 ,  G11B2007/24316

摘要： The present invention is concerned with an optical disc in which a layer of a material undergoing partial phase transitions within a scanning light spot of a readout light so as to be changed in this manner in its optical constants is formed on a base plate, on which phase pits are formed in advance in accordance with information signals, and in which the layer of the material is reset to its initial state, even if the pit period is less than the limit of diffraction, satisfactory reproduction free of crosstalks may be achieved to enable high density recording.

摘要翻译： 本发明涉及一种光盘，其中在读取光的扫描光点内经历部分相变的材料层以其光学常数以这种方式变化的光盘形成在基板上， 相位凹坑根据信息信号预先形成，并且其中材料层被复位到其初始状态，即使凹坑周期小于衍射极限，也可以实现令人满意的没有串扰的再现，以使得能够实现 高密度录音。

公开(公告)号：US4882231A

公开(公告)日：1989-11-21

申请号：US278022

申请日：1988-11-30

申请人： Katsuhisa Aratani

发明人： Katsuhisa Aratani

IPC分类号： G11B11/10 ,  G11B11/105

CPC分类号： G11B11/10586 ,  Y10S428/928 ,  Y10T428/12465 ,  Y10T428/12493 ,  Y10T428/12931 ,  Y10T428/12986

摘要： The magneto-optical recording medium is disclosed which has a laminous structure with a first magnetic film suited to provide a large rotation angle of the plane of polarization by magneto-optical interaction, a third magnetic film having a great coercive force, and a second magnetic film interposed therebetween to magnetically couple the first and third magnetic films at room temperature, wherein such magnetic coupling is substantially interrupted at a temperature in a recording operation.Upon recording signal on the medium, a laser beam is irradiated to the medium and raises the temperature of the medium near Curie temperature Tc3 of the third magnetic film, thus direction of the magnetization is determined by the magnetic field applied to the irradiated portion.Upon cooling the irradiated portion, the second magnetic film serves to magnetically couple the first and third magnetic film, the magnetization of the third film is transferred to the first film. Thus the required magnetic field for recording is greatly reduced, and high C/N can be obtained resulting in high density recording.

公开(公告)号：US09112149B2

公开(公告)日：2015-08-18

申请号：US13310830

申请日：2011-12-05

申请人： Hiroaki Sei ,  Shuichiro Yasuda ,  Masayuki Shimuta ,  Katsuhisa Aratani ,  Akira Kouchiyama ,  Tetsuya Mizuguchi ,  Kazuhiro Ohba

发明人： Hiroaki Sei ,  Shuichiro Yasuda ,  Masayuki Shimuta ,  Katsuhisa Aratani ,  Akira Kouchiyama ,  Tetsuya Mizuguchi ,  Kazuhiro Ohba

IPC分类号： H01L21/20 ,  H01L45/00

CPC分类号： H01L45/14 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/1625 ,  H01L45/1641

摘要： A memory element with reduced degradation of memory characteristics that is caused by deterioration of a memory layer, a method of manufacturing the memory element, and a memory device are provided. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer containing fluoride, and an ion source layer disposed between the resistance change layer and the second electrode.

摘要翻译： 提供了由存储器层的劣化引起的存储器特性降低降低的存储元件，制造存储元件的方法和存储器件。 存储元件依次包括第一电极，存储层和第二电极。 存储层包括含有氟化物的电阻变化层和设置在电阻变化层和第二电极之间的离子源层。

公开(公告)号：US08884397B2

公开(公告)日：2014-11-11

申请号：US12961088

申请日：2010-12-06

申请人： Katsuhisa Aratani ,  Akihiro Maesaka ,  Akira Kouchiyama ,  Tomohito Tsushima

发明人： Katsuhisa Aratani ,  Akihiro Maesaka ,  Akira Kouchiyama ,  Tomohito Tsushima

IPC分类号： H01L29/00 ,  H01L47/00 ,  H01L45/00 ,  G11C13/00 ,  H01L27/24

CPC分类号： G11C13/0011 ,  G11C13/0007 ,  G11C2213/11 ,  G11C2213/15 ,  G11C2213/33 ,  G11C2213/34 ,  G11C2213/56 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/143 ,  H01L45/144 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1625

摘要： A memory device 10 having an arrangement in which a memory thin film is sandwiched between first and second electrodes, the memory thin film contains at least rare earth elements, the memory thin film 4 or a layer in contact with the memory thin film contains any one of elements selected from Cu, Ag, Zn and the memory thin film or the layer in contact with the memory thin film contains any one of elements selected from Te, S, Se.

摘要翻译： 具有这样一种结构的存储器件10，其中存储薄膜夹在第一和第二电极之间，存储薄膜至少含有稀土元素，存储薄膜4或与存储薄膜接触的层包含任何一种 选自Cu，Ag，Zn和记忆薄膜的元素或与记忆薄膜接触的层包含选自Te，S，Se中的任何一种元素。

公开(公告)号：US08674335B2

公开(公告)日：2014-03-18

申请号：US13004976

申请日：2011-01-12

申请人： Shuichiro Yasuda ,  Katsuhisa Aratani ,  Kazuhiro Ohba ,  Hiroaki Sei

发明人： Shuichiro Yasuda ,  Katsuhisa Aratani ,  Kazuhiro Ohba ,  Hiroaki Sei

IPC分类号： H01L47/00 ,  H01L29/04

摘要： A memory component includes: a first electrode; a memory layer; and a second electrode in this order, wherein the memory layer includes a high resistance layer which includes tellurium (Te) as the chief component among anion components and is formed on the first electrode side; and an ion source layer which includes at least one kind of metal element and at least one kind of chalcogen element among tellurium (Te), sulfur (S) and selenium (Se) and is formed on the second electrode side.

公开(公告)号：US08350248B2

公开(公告)日：2013-01-08

申请号：US12349644

申请日：2009-01-07

申请人： Shuichiro Yasuda ,  Tomohito Tsushima ,  Satoshi Sasaki ,  Katsuhisa Aratani

发明人： Shuichiro Yasuda ,  Tomohito Tsushima ,  Satoshi Sasaki ,  Katsuhisa Aratani

IPC分类号： H01L47/00

CPC分类号： G11C13/02 ,  G11C2213/11 ,  G11C2213/56 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/1625

摘要： A memory device of a resistance variation type, in which data retaining characteristic at the time of writing is improved, is provided. The memory device includes: a plurality of memory elements in which a memory layer is provided between a first electrode and a second electrode so that data is written or erased in accordance with a variation in electrical characteristics of the memory layer; and pulse applying means applying a voltage pulse or a current pulse selectively to the plurality of memory elements. The memory layer includes an ion source layer including an ionic-conduction material and at least one kind of metallic element, and the ion source layer further contains oxygen.

摘要翻译： 提供了一种电阻变化型存储器件，其中写入时的数据保持特性得到改善。 存储器件包括：多个存储元件，其中存储层设置在第一电极和第二电极之间，使得根据存储层的电特性的变化来写入或擦除数据; 以及对多个存储元件选择性地施加电压脉冲或电流脉冲的脉冲施加装置。 存储层包括离子源层，其包括离子传导材料和至少一种金属元素，离子源层还含有氧。