利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

70 条记录 (耗时 0.031 秒)

    Solid-state image pickup device
    11.
    发明授权
    Solid-state image pickup device 有权
    固态图像拾取装置

    公开(公告)号：US06188094B1

    公开(公告)日：2001-02-13

    申请号：US09270008

    申请日：1999-03-16

    申请人： Tetsunobu Kochi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Katsuhisa Ogawa ,  Toru Koizumi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    发明人： Tetsunobu Kochi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Katsuhisa Ogawa ,  Toru Koizumi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    IPC分类号： H01L27148

    CPC分类号： H01L27/14629 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/14692 ,  H01L27/14698

    摘要： To achieve a high density, high resolution, or size reduction, there is provided a solid-state image pickup device having a plurality of photoelectric conversion elements formed in a semiconductor substrate, conductive layers formed on the semiconductor substrate between the neighboring photoelectric conversion elements via an interlayer layer, a first interlayer layer formed on the photoelectric conversion elements and conductive layers, a second interlayer layer formed on the first interlayer layer, and microlenses formed above the photoelectric conversion elements, wherein the refraction index of the first interlayer layer located above the photoelectric conversion elements is different from that of the second interlayer layer.

    摘要翻译： 为了实现高密度，高分辨率或尺寸减小，提供了一种固态图像拾取装置，其具有形成在半导体衬底中的多个光电转换元件，在相邻的光电转换元件之间的半导体衬底上形成的导电层经由 层间层，形成在光电转换元件和导电层上的第一层间层，形成在第一层间层上的第二层间层和形成在光电转换元件上方的微透镜，其中位于第一层间层上方的第一层间层的折射率 光电转换元件与第二层间层不同。

    Image pickup apparatus with color filter array and means for adding and subtracting signals
    13.
    发明授权
    Image pickup apparatus with color filter array and means for adding and subtracting signals 失效
    具有滤色器阵列的图像拾取装置和用于加和减信号的装置

    公开(公告)号：US06757016B1

    公开(公告)日：2004-06-29

    申请号：US09219754

    申请日：1998-12-23

    申请人： Isamu Ueno ,  Shigetoshi Sugawa ,  Katsuhisa Ogawa ,  Toru Koizumi ,  Tetsunobu Kochi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    发明人： Isamu Ueno ,  Shigetoshi Sugawa ,  Katsuhisa Ogawa ,  Toru Koizumi ,  Tetsunobu Kochi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    IPC分类号： H04N314

    CPC分类号： H04N9/045

    摘要： To provide an image pickup apparatus that generates an image signal having a high resolution both horizontally and vertically, the filter arrangement for a color filter array used in the apparatus is so designed that the colors of the filters in a cyclic patterned unit of N rows×N columns (4 lines×4 columns) differ from each other not only on the same line but also in the same column. Thus, from all the pixel blocks, pixel signals for each predetermined pixel block unit can be obtained that are required for the generation of a luminance signal and of color signals.

    摘要翻译： 为了提供在水平和垂直方向上产生高分辨率的图像信号的图像拾取装置，用于装置中的滤色器阵列的滤色器装置被设计成使得N行×N列的循环图案化单元中的滤色器的颜色 （4行×4列）彼此不同，不仅在同一行上，而且在同一列中。 因此，从所有像素块，可以获得用于生成亮度信号和颜色信号所需的每个预定像素块单元的像素信号。

    Solid state image pickup device and signal reading method thereof
    15.
    发明授权
    Solid state image pickup device and signal reading method thereof 有权
    固体摄像装置及其信号读取方法

    公开(公告)号：US06784928B1

    公开(公告)日：2004-08-31

    申请号：US09210997

    申请日：1998-12-15

    申请人： Katsuhito Sakurai ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Katsuhisa Ogawa ,  Toru Koizumi ,  Tetsunobu Kochi ,  Hiroki Hiyama

    发明人： Katsuhito Sakurai ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Katsuhisa Ogawa ,  Toru Koizumi ,  Tetsunobu Kochi ,  Hiroki Hiyama

    IPC分类号： H04N5225

    CPC分类号： H04N9/045 ,  H04N5/343 ,  H04N5/3456 ,  H04N5/37213

    摘要： A solid state image pickup device has a drive unit with an all pixel drive mode for reading all pixels in a horizontal direction and a pixel skip drive mode for reading pixels in the horizontal direction by skipping some pixels, and a plurality of read-out systems for reading pixels. In the all pixel drive mode, signals of pixels are divisionally read by the plurality of read-out systems, and in the pixel skip drive mode, signals of pixels are read by one of the plurality of read-out systems. In this manner, in the pixel skip drive mode, the power consumption can be reduced and a difference between output signal levels to be caused by a variation in characteristics of elements of the read-out system can be suppressed.

    摘要翻译： 固态图像拾取装置具有驱动单元，其具有用于读取水平方向上的所有像素的全像素驱动模式和用于通过跳过某些像素来读取水平方向上的像素的像素跳过驱动模式，以及多个读出系统 用于读取像素。 在全像素驱动模式中，由多个读出系统分割地读取像素的信号，并且在像素跳过驱动模式中，多个读出系统之一读取像素的信号。 以这种方式，在像素跳过驱动模式中，可以降低功耗，并且可以抑制由读出系统的元件的特性变化引起的输出信号电平之间的差异。

    Image sensing device using MOS-type image sensing element whose threshold voltage of charge transfer switch and reset switch is different from that of signal output transistor
    16.
    发明授权
    Image sensing device using MOS-type image sensing element whose threshold voltage of charge transfer switch and reset switch is different from that of signal output transistor 有权
    使用MOS电荷感应元件的图像感测装置，其电荷转移开关和复位开关的阈值电压与信号输出晶体管的阈值电压不同

    公开(公告)号：US06670990B1

    公开(公告)日：2003-12-30

    申请号：US09161402

    申请日：1998-09-28

    申请人： Tetsunobu Kochi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Katsuhisa Ogawa ,  Toru Koizumi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    发明人： Tetsunobu Kochi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Katsuhisa Ogawa ,  Toru Koizumi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    IPC分类号： H04N314

    CPC分类号： H04N5/37452 ,  H01L27/14609 ,  H01L27/14643 ,  H04N5/3559 ,  H04N5/363 ,  H04N5/365 ,  H04N5/374 ,  H04N5/3741

    摘要： In a photoelectric conversion device having a plurality of pixel cells each of which includes a photoelectric conversion element, a field effect transistor having the gate area for storing signal charge generated by the photoelectric conversion element and the source-drain path for outputting a signal corresponding to the signal charge stored in the gate, a first power supply line for supplying electric power to the field effect transistor, and a first switch connected between the field effect transistor and the first power supply line, when a reset voltage for resetting the gate of the field effect transistor is Vsig0, a threshold voltage of the field effect transistor is Vth, current flowing through the field effect transistor is Ia, a voltage applied via the first power supply line is Vc1, and a series resistance of the first switch is Ron, each pixel cell is configured to satisfy a condition determined by Vc1−Ron×Ia>Vsig0−Vth.

    摘要翻译： 在具有包括光电转换元件的多个像素单元的光电转换装置中，具有用于存储由光电转换元件生成的信号电荷的栅极区域的场效应晶体管和用于输出与光电转换元件对应的信号的源极 - 漏极路径 存储在栅极中的信号电荷，用于向场效应晶体管提供电力的第一电源线和连接在场效应晶体管和第一电源线之间的第一开关，当用于复位栅极的复位电压 场效应晶体管为Vsig0，场效应晶体管的阈值电压为Vth，流过场效应晶体管的电流为Ia，经由第一电源线施加的电压为Vc1，第一开关的串联电阻为Ron， 每个像素单元被配置为满足由Vc1-RonxIa> Vsig0-Vth确定的条件。

    Solid state image pickup device and manufacturing method therefor
    17.
    发明授权
    Solid state image pickup device and manufacturing method therefor 有权
    固态摄像装置及其制造方法

    公开(公告)号：US07274394B2

    公开(公告)日：2007-09-25

    申请号：US10622540

    申请日：2003-07-21

    申请人： Toru Koizumi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Tetsunobu Kochi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    发明人： Toru Koizumi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Tetsunobu Kochi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    IPC分类号： H04N3/14 ,  H01L21/336 ,  H01L31/062 ,  H01L27/00

    CPC分类号： H01L27/14806 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/035281 ,  Y02E10/50

    摘要： A method of manufacturing a MOS-type solid-state image pickup device having a photoelectric conversion unit, a transfer MOS transistor, a gate electrode disposed on an insulating film and a semiconductor substrate on which the photoelectric conversion unit and the transfer MOS transistor are disposed, includes a first step of forming a second semiconductor region by ion implanting an impurity of a second conductivity type at a first angle with a first energy using the gate electrode as a mask, and a second step of forming a fifth semiconductor region by ion implanting an impurity of the second conductivity type at a second angle with a second energy using the gate electrode as a mask. A fourth semiconductor region is formed by ion implanting an impurity of the second conductivity type. The second energy is smaller than the first energy, and the first and second angles are respectively angles to a direction normal to a surface of the semiconductor substrate, with the second angle being larger than the first angle, and the first and third steps being performed separately.

    摘要翻译： 一种制造具有光电转换单元，转移MOS晶体管，设置在绝缘膜上的栅极电极和设置有光电转换单元和转移MOS晶体管的半导体衬底的MOS型固体摄像器件的方法 包括通过使用栅电极作为掩模以第一角度以第一角度离子注入第二导电类型的杂质形成第二半导体区域的第一步骤，以及通过离子注入形成第五半导体区域的第二步骤 使用栅电极作为掩模，以第二能量以第二角度的第二导电类型的杂质。 通过离子注入第二导电类型的杂质形成第四半导体区域。 第二能量小于第一能量，并且第一和第二角度分别是与垂直于半导体衬底的表面的方向的角度，其中第二角度大于第一角度，并且执行第一和第三步骤 分别。

    Solid state image pickup device and manufacturing method therefor
    19.
    发明授权
    Solid state image pickup device and manufacturing method therefor 有权
    固态摄像装置及其制造方法

    公开(公告)号：US08395193B2

    公开(公告)日：2013-03-12

    申请号：US13364601

    申请日：2012-02-02

    申请人： Toru Koizumi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Tetsunobu Kochi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    发明人： Toru Koizumi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Tetsunobu Kochi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    IPC分类号： H01L29/76

    CPC分类号： H01L27/14806 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/035281 ,  Y02E10/50

    摘要： A MOS-type solid-state image pickup device is provided on a semiconductor substrate and includes a photoelectric conversion unit having a first semiconductor region, a second semiconductor region, and a third semiconductor region. A transfer gate electrode is disposed on an insulation film and transfers a carrier from the second semiconductor region to a fourth semiconductor region, and an amplifying MOS transistor has a gate electrode connected to the fourth semiconductor region. In addition, a fifth semiconductor region is continuously disposed to the second semiconductor region, under the gate electrode. An entire surface of the third semiconductor region is covered with the insulation film, and a side portion of the third semiconductor region that is laterally opposite to the transfer gate is in contact with the first semiconductor region.

    摘要翻译： MOS型固态摄像装置设置在半导体衬底上，并包括具有第一半导体区域，第二半导体区域和第三半导体区域的光电转换单元。 传输栅电极设置在绝缘膜上并将载体从第二半导体区传送到第四半导体区，放大MOS晶体管具有与第四半导体区连接的栅电极。 另外，第五半导体区域在栅极下方连续地设置到第二半导体区域。 第三半导体区域的整个表面被绝缘膜覆盖，并且与传输栅极横向相对的第三半导体区域的侧部与第一半导体区域接触。

    Solid state image pickup apparatus
    20.
    发明授权
    Solid state image pickup apparatus 有权
    固态摄像装置

    公开(公告)号：US07110030B1

    公开(公告)日：2006-09-19

    申请号：US09264719

    申请日：1999-03-09

    申请人： Tetsunobu Kochi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Toru Koizumi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    发明人： Tetsunobu Kochi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Toru Koizumi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    IPC分类号： H04N3/14 ,  H04N5/335

    CPC分类号： H04N5/374

    摘要： In the solid state image pickup apparatus, in order to achieve complete transfer of the charge from the photodiode to the floating diffusion area, there is provided a pickup apparatus having a photoelectric conversion element, a transfer switch consisting of a MOS transistor for transferring the signal charge generated in the photoelectric conversion element, a floating diffusion capacitance for receiving the signal charge through the transfer switch, and a reset switch consisting of a MOS transistor for resetting the potential of the floating diffusion capacitance, the device comprising at least a potential setting circuit for generating a voltage different from the power supply voltage, wherein the output of the potential setting circuit is applied as a pulse to the gate of the transfer switch and/or the gate of the reset switch.

    摘要翻译： 在固态图像拾取装置中，为了实现电荷从光电二极管完全转移到浮动扩散区域，提供了一种拾取装置，其具有光电转换元件，由用于传送信号的MOS晶体管组成的转移开关 在光电转换元件中产生的电荷，用于通过转移开关接收信号电荷的浮动扩散电容，以及由用于复位浮动扩散电容的电位的MOS晶体管组成的复位开关，该器件至少包括电位设置电路 用于产生不同于电源电压的电压，其中电位设置电路的输出作为脉冲施加到转换开关的栅极和/或复位开关的栅极。