利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

239 条记录 (耗时 0.033 秒)

    Image sensing device using MOS type image sensing elements
    3.
    发明授权
    Image sensing device using MOS type image sensing elements 失效
    图像感测器件采用MOS型摄像元件

    公开(公告)号：US06946637B2

    公开(公告)日：2005-09-20

    申请号：US10680181

    申请日：2003-10-08

    申请人： Tetsunobu Kochi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Katsuhisa Ogawa ,  Toru Koizumi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    发明人： Tetsunobu Kochi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Katsuhisa Ogawa ,  Toru Koizumi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    IPC分类号： H01L27/146 ,  H04N5/355 ,  H04N5/363 ,  H04N5/365 ,  H04N5/374 ,  H04N5/3745 ,  H01J40/14

    CPC分类号： H04N5/37452 ,  H01L27/14609 ,  H01L27/14643 ,  H04N5/3559 ,  H04N5/363 ,  H04N5/365 ,  H04N5/374 ,  H04N5/3741

    摘要： In a photoelectric conversion device having a plurality of pixel cells each of which includes a photoelectric conversion element, a field effect transistor having the gate area for storing signal charge generated by the photoelectric conversion element and the source-drain path for outputting a signal corresponding to the signal charge stored in the gate, a first power supply line for supplying electric power to the field effect transistor, and a first switch connected between the field effect transistor and the first power supply line, when a reset voltage for resetting the gate of the field effect transistor is Vsig0, a threshold voltage of the field effect transistor is Vth, current flowing through the field effect transistor is Ia, a voltage applied via the first power supply line is Vc1, and a series resistance of the first switch is Ron, each pixel cell is configured to satisfy a condition determined by Vc1−Ron×Ia>Vsig0−Vth.

    摘要翻译： 在具有包括光电转换元件的多个像素单元的光电转换装置中，具有用于存储由光电转换元件生成的信号电荷的栅极区域的场效应晶体管和用于输出与光电转换元件对应的信号的源极 - 漏极路径 存储在栅极中的信号电荷，用于向场效应晶体管提供电力的第一电源线和连接在场效应晶体管和第一电源线之间的第一开关，当用于复位栅极的复位电压 场效应晶体管是V Sig0 ，场效应晶体管的阈值电压为V th，则流过场效应晶体管的电流为I / ，经由第一电源线施加的电压为V C1，并且第一开关的串联电阻为R＆lt;＆lt;＆gt;，每个像素单元被配置为满足所确定的条件 通过V c1 <！ - SIPO

    Solid state image pickup device and manufacturing method therefor
    5.
    发明授权
    Solid state image pickup device and manufacturing method therefor 有权
    固态摄像装置及其制造方法

    公开(公告)号：US08395193B2

    公开(公告)日：2013-03-12

    申请号：US13364601

    申请日：2012-02-02

    申请人： Toru Koizumi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Tetsunobu Kochi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    发明人： Toru Koizumi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Tetsunobu Kochi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    IPC分类号： H01L29/76

    CPC分类号： H01L27/14806 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/035281 ,  Y02E10/50

    摘要： A MOS-type solid-state image pickup device is provided on a semiconductor substrate and includes a photoelectric conversion unit having a first semiconductor region, a second semiconductor region, and a third semiconductor region. A transfer gate electrode is disposed on an insulation film and transfers a carrier from the second semiconductor region to a fourth semiconductor region, and an amplifying MOS transistor has a gate electrode connected to the fourth semiconductor region. In addition, a fifth semiconductor region is continuously disposed to the second semiconductor region, under the gate electrode. An entire surface of the third semiconductor region is covered with the insulation film, and a side portion of the third semiconductor region that is laterally opposite to the transfer gate is in contact with the first semiconductor region.

    摘要翻译： MOS型固态摄像装置设置在半导体衬底上，并包括具有第一半导体区域，第二半导体区域和第三半导体区域的光电转换单元。 传输栅电极设置在绝缘膜上并将载体从第二半导体区传送到第四半导体区，放大MOS晶体管具有与第四半导体区连接的栅电极。 另外，第五半导体区域在栅极下方连续地设置到第二半导体区域。 第三半导体区域的整个表面被绝缘膜覆盖，并且与传输栅极横向相对的第三半导体区域的侧部与第一半导体区域接触。

    Solid-state image pickup element
    6.
    发明授权
    Solid-state image pickup element 失效
    固态摄像元件

    公开(公告)号：US06831685B1

    公开(公告)日：2004-12-14

    申请号：US09316947

    申请日：1999-05-24

    申请人： Isamu Ueno ,  Shigetoshi Sugawa ,  Katsuhisa Ogawa ,  Toru Koizumi ,  Tetsunobu Kochi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    发明人： Isamu Ueno ,  Shigetoshi Sugawa ,  Katsuhisa Ogawa ,  Toru Koizumi ,  Tetsunobu Kochi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    IPC分类号： H04N964

    CPC分类号： H04N5/3698 ,  H04N5/3595 ,  H04N5/376 ,  H04N5/378

    摘要： This invention is to provide a solid-state image pickup element including a sensor unit including a plurality of lines of photoelectric conversion units for generating charges from received light by photoelectric conversion, a memory unit including a plurality of lines of storage units for storing signals from the plurality of lines of photoelectric conversion units, a transfer unit for transferring a signal from the sensor unit to the memory unit, a control unit for causing storage units of an arbitrary block in the memory unit to output an image signal from the photoelectric conversion units and causing the photoelectric conversion units corresponding to the storage units of the arbitrary block to output a noise signal, and a subtracting unit for calculating a difference between the image signal and the noise signal.

    摘要翻译： 本发明提供一种固态摄像元件，包括：传感器单元，包括多条光电转换单元，用于通过光电转换从接收的光产生电荷;存储单元，包括多行存储单元，用于存储来自 多条光电转换单元，用于将信号从传感器单元传送到存储单元的转移单元，用于使存储单元中的任意块的存储单元输出来自光电转换单元的图像信号的控制单元 并且使与所述任意块的存储单元对应的光电转换单元输出噪声信号，以及用于计算图像信号和噪声信号之间的差的减法单元。

    Solid-state image pickup device
    8.
    发明授权
    Solid-state image pickup device 有权
    固态图像拾取装置

    公开(公告)号：US06188094B1

    公开(公告)日：2001-02-13

    申请号：US09270008

    申请日：1999-03-16

    申请人： Tetsunobu Kochi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Katsuhisa Ogawa ,  Toru Koizumi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    发明人： Tetsunobu Kochi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Katsuhisa Ogawa ,  Toru Koizumi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    IPC分类号： H01L27148

    CPC分类号： H01L27/14629 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/14692 ,  H01L27/14698

    摘要： To achieve a high density, high resolution, or size reduction, there is provided a solid-state image pickup device having a plurality of photoelectric conversion elements formed in a semiconductor substrate, conductive layers formed on the semiconductor substrate between the neighboring photoelectric conversion elements via an interlayer layer, a first interlayer layer formed on the photoelectric conversion elements and conductive layers, a second interlayer layer formed on the first interlayer layer, and microlenses formed above the photoelectric conversion elements, wherein the refraction index of the first interlayer layer located above the photoelectric conversion elements is different from that of the second interlayer layer.

    摘要翻译： 为了实现高密度，高分辨率或尺寸减小，提供了一种固态图像拾取装置，其具有形成在半导体衬底中的多个光电转换元件，在相邻的光电转换元件之间的半导体衬底上形成的导电层经由 层间层，形成在光电转换元件和导电层上的第一层间层，形成在第一层间层上的第二层间层和形成在光电转换元件上方的微透镜，其中位于第一层间层上方的第一层间层的折射率 光电转换元件与第二层间层不同。

    Solid state image pickup device and manufacturing method therefor
    9.
    发明授权
    Solid state image pickup device and manufacturing method therefor 有权
    固态摄像装置及其制造方法

    公开(公告)号：US07274394B2

    公开(公告)日：2007-09-25

    申请号：US10622540

    申请日：2003-07-21

    申请人： Toru Koizumi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Tetsunobu Kochi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    发明人： Toru Koizumi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Tetsunobu Kochi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    IPC分类号： H04N3/14 ,  H01L21/336 ,  H01L31/062 ,  H01L27/00

    CPC分类号： H01L27/14806 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/035281 ,  Y02E10/50

    摘要： A method of manufacturing a MOS-type solid-state image pickup device having a photoelectric conversion unit, a transfer MOS transistor, a gate electrode disposed on an insulating film and a semiconductor substrate on which the photoelectric conversion unit and the transfer MOS transistor are disposed, includes a first step of forming a second semiconductor region by ion implanting an impurity of a second conductivity type at a first angle with a first energy using the gate electrode as a mask, and a second step of forming a fifth semiconductor region by ion implanting an impurity of the second conductivity type at a second angle with a second energy using the gate electrode as a mask. A fourth semiconductor region is formed by ion implanting an impurity of the second conductivity type. The second energy is smaller than the first energy, and the first and second angles are respectively angles to a direction normal to a surface of the semiconductor substrate, with the second angle being larger than the first angle, and the first and third steps being performed separately.

    摘要翻译： 一种制造具有光电转换单元，转移MOS晶体管，设置在绝缘膜上的栅极电极和设置有光电转换单元和转移MOS晶体管的半导体衬底的MOS型固体摄像器件的方法 包括通过使用栅电极作为掩模以第一角度以第一角度离子注入第二导电类型的杂质形成第二半导体区域的第一步骤，以及通过离子注入形成第五半导体区域的第二步骤 使用栅电极作为掩模，以第二能量以第二角度的第二导电类型的杂质。 通过离子注入第二导电类型的杂质形成第四半导体区域。 第二能量小于第一能量，并且第一和第二角度分别是与垂直于半导体衬底的表面的方向的角度，其中第二角度大于第一角度，并且执行第一和第三步骤 分别。