公开(公告)号：US08045300B2

公开(公告)日：2011-10-25

申请号：US12036513

申请日：2008-02-25

申请人： Kazumasa Nishimura ,  Yosuke Ide ,  Naoya Hasegawa ,  Masamichi Saito ,  Yoshihiro Nishiyama ,  Ryo Nakabayashi ,  Hidekazu Kobayashi

发明人： Kazumasa Nishimura ,  Yosuke Ide ,  Naoya Hasegawa ,  Masamichi Saito ,  Yoshihiro Nishiyama ,  Ryo Nakabayashi ,  Hidekazu Kobayashi

IPC分类号： G11B5/39

CPC分类号： G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  H01F10/3254 ,  H01F10/3295 ,  H01F41/302

摘要： A free magnetic layer has a laminated structure in which a first magnetic sublayer composed of Co—Fe or Fe and a second magnetic sublayer composed of Co—Fe—B or Fe—B are formed, in that order, on an insulating barrier layer composed of Mg—O. This effectively improves the rate of change in resistance (ΔR/R) compared with the related art.

摘要翻译： 自由磁性层具有层叠结构，其中由Co-Fe或Fe组成的第一磁性子层和由Co-Fe-B或Fe-B组成的第二磁性子层依次形成在绝缘阻挡层上 的Mg-O。 与现有技术相比，这有效地提高了电阻变化率（＆Dgr; R / R）。

公开(公告)号：US07787221B2

公开(公告)日：2010-08-31

申请号：US11671756

申请日：2007-02-06

申请人： Ryo Nakabayashi ,  Kazumasa Nishimura ,  Yosuke Ide ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Masamichi Saito ,  Naoya Hasegawa

发明人： Ryo Nakabayashi ,  Kazumasa Nishimura ,  Yosuke Ide ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Masamichi Saito ,  Naoya Hasegawa

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/302 ,  H01L43/08

摘要： A first pinned magnetic sublayer 4a has a multilayered structure including a first insertion subsublayer disposed between a lower ferromagnetic subsublayer and an upper ferromagnetic subsublayer. The first insertion subsublayer has an average thickness exceeding 3 Å and 6 Å or less. This results in an interlayer coupling magnetic field Hin lower than a known art while RA and the rate of resistance change (ΔR/R) substantially identical to those of the known structure are maintained.

摘要翻译： 第一固定磁性子层4a具有多层结构，其包括设置在下铁磁共晶层与上部铁磁层之间的第一插入层。 第一个插入次层具有超过3埃和6埃或更小的平均厚度。 这导致层间耦合磁场Hin低于已知技术，而RA和电阻变化率（＆Dgr; R / R）与已知结构基本相同。

公开(公告)号：US20080218913A1

公开(公告)日：2008-09-11

申请号：US12042585

申请日：2008-03-05

申请人： Kazumasa Nishimura ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Naoya Hasegawa

发明人： Kazumasa Nishimura ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Naoya Hasegawa

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3929 ,  H01L43/08

摘要： In a tunneling magnetoresistive element, an insulating barrier layer is made of Mg—O, and a first pinned magnetic layer has a laminated structure in which a nonmagnetic metal sublayer made of Ta is interposed between a lower ferromagnetic sublayer and an upper ferromagnetic sublayer. The nonmagnetic metal sublayer has an average thickness of about 1 Å or more and about 5 Å or less.

摘要翻译： 在隧道磁阻元件中，绝缘阻挡层由Mg-O制成，并且第一被钉扎磁性层具有其中由Ta制成的非磁性金属子层介于下铁磁层和上铁磁层之间的层叠结构。 非磁性金属子层的平均厚度为约1埃以上且约5以下。

公开(公告)号：US20080186638A1

公开(公告)日：2008-08-07

申请号：US12026329

申请日：2008-02-05

申请人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Hidekazu Kobayashi ,  Yoshihiro Nishiyama ,  Yosuke Ide ,  Masamichi Saito ,  Naoya Hasegawa

发明人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Hidekazu Kobayashi ,  Yoshihiro Nishiyama ,  Yosuke Ide ,  Masamichi Saito ,  Naoya Hasegawa

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01L43/08

摘要： A tunneling magnetic sensing element includes a free magnetic layer disposed on an insulating barrier layer, the free magnetic layer including an enhancement layer, a first soft magnetic layer, a first nonmagnetic metal layer, a second soft magnetic layer, a second nonmagnetic metal layer, and a third soft magnetic layer disposed in that order from the bottom. The enhancement layer is, for example, composed of Co—Fe, each of the soft magnetic layers is, for example, composed of Ni—Fe, and each of the nonmagnetic metal layers is, for example, composed of Ta. Consequently, it is possible to stably obtain a high rate of change in resistance (ΔR/R) compared with the known art.

摘要翻译： 隧道磁传感元件包括设置在绝缘阻挡层上的自由磁性层，所述自由磁性层包括增强层，第一软磁层，第一非磁性金属层，第二软磁层，第二非磁性金属层， 以及从底部依次设置的第三软磁性层。 增强层例如由Co-Fe构成，各软磁层例如由Ni-Fe构成，各非磁性金属层例如由Ta构成。 因此，与现有技术相比，可以稳定地获得高电阻变化率（DeltaR / R）。

公开(公告)号：US07969693B2

公开(公告)日：2011-06-28

申请号：US11857921

申请日：2007-09-19

申请人： Kazuaki Ikarashi ,  Eiji Umetsu ,  Kenichi Tanaka ,  Kazumasa Nishimura ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Naoya Hasegawa

发明人： Kazuaki Ikarashi ,  Eiji Umetsu ,  Kenichi Tanaka ,  Kazumasa Nishimura ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Naoya Hasegawa

IPC分类号： G11B5/39

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/16 ,  H01F10/132 ,  H01F10/3254 ,  H01F41/302 ,  H01L43/12

摘要： A tunnel magnetoresistive sensor includes a pinned magnetic layer, an insulating barrier layer formed of Mg—O, and a free magnetic layer. A barrier-layer-side magnetic sublayer constituting at least part of the pinned magnetic layer and being in contact with the insulating barrier layer includes a first magnetic region formed of CoFeB or FeB and a second magnetic region formed of CoFe or Fe. The second magnetic region is disposed between the first magnetic region and the insulating barrier layer.

摘要翻译： 隧道磁阻传感器包括钉扎磁性层，由Mg-O形成的绝缘阻挡层和自由磁性层。 构成被钉扎磁性层的至少一部分并与绝缘阻挡层接触的阻挡层侧磁性子层包括由CoFeB或FeB形成的第一磁性区域和由CoFe或Fe形成的第二磁性区域。 第二磁性区域设置在第一磁性区域和绝缘阻挡层之间。

公开(公告)号：US08124253B2

公开(公告)日：2012-02-28

申请号：US12615689

申请日：2009-11-10

申请人： Kazumasa Nishimura ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Naoya Hasegawa

发明人： Kazumasa Nishimura ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Naoya Hasegawa

IPC分类号： G11B5/39

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3272 ,  Y10T428/1114 ,  Y10T428/1143 ,  Y10T428/1193 ,  Y10T428/266 ,  Y10T428/31678

摘要： A tunneling magnetic sensing element includes a laminate in which an underlayer, a seed layer, an antiferromagnetic layer, a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer are laminated in order from below. The insulating barrier layer is made of Mg—O. The underlayer is made of Ti, and the seed layer is made of one selected from a group consisting of Ni—Fe—Cr and Ru.

摘要翻译： 隧道磁传感元件包括层叠体，其中从下面依次层叠下层，种子层，反铁磁层，钉扎磁性层，绝缘阻挡层和自由磁性层。 绝缘阻挡层由Mg-O制成。 底层由Ti制成，种子层由选自Ni-Fe-Cr和Ru的一种制成。

公开(公告)号：US20100055452A1

公开(公告)日：2010-03-04

申请号：US12615689

申请日：2009-11-10

申请人： Kazumasa Nishimura ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Naoya Hasegawa

发明人： Kazumasa Nishimura ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Naoya Hasegawa

IPC分类号： B32B15/04 ,  B32B5/00

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3272 ,  Y10T428/1114 ,  Y10T428/1143 ,  Y10T428/1193 ,  Y10T428/266 ,  Y10T428/31678

摘要： A tunneling magnetic sensing element includes a laminate in which an underlayer, a seed layer, an antiferromagnetic layer, a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer are laminated in order from below. The insulating barrier layer is made of Mg—O. The underlayer is made of Ti, and the seed layer is made of one selected from a group consisting of Ni—Fe—Cr and Ru.

摘要翻译： 隧道磁传感元件包括层叠体，其中从下面依次层叠下层，种子层，反铁磁层，钉扎磁性层，绝缘阻挡层和自由磁性层。 绝缘阻挡层由Mg-O制成。 底层由Ti制成，种子层由选自Ni-Fe-Cr和Ru的一种制成。

公开(公告)号：US20080225443A1

公开(公告)日：2008-09-18

申请号：US12036513

申请日：2008-02-25

申请人： Kazumasa Nishimura ,  Yosuke Ide ,  Naoya Hasegawa ,  Masamichi Saito ,  Yoshihiro Nishiyama ,  Ryo Nakabayashi ,  Hidekazu Kobayashi

发明人： Kazumasa Nishimura ,  Yosuke Ide ,  Naoya Hasegawa ,  Masamichi Saito ,  Yoshihiro Nishiyama ,  Ryo Nakabayashi ,  Hidekazu Kobayashi

IPC分类号： G11B5/33

CPC分类号： G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  H01F10/3254 ,  H01F10/3295 ,  H01F41/302

摘要： A free magnetic layer has a laminated structure in which a first magnetic sublayer composed of Co—Fe or Fe and a second magnetic sublayer composed of Co—Fe—B or Fe—B are formed, in that order, on an insulating barrier layer composed of Mg—O. This effectively improves the rate of change in resistance (ΔR/R) compared with the related art.

摘要翻译： 自由磁性层具有层叠结构，其中由Co-Fe或Fe组成的第一磁性子层和由Co-Fe-B或Fe-B组成的第二磁性子层依次形成在绝缘阻挡层上 的Mg-O。 与现有技术相比，这有效地提高了电阻变化率（DeltaR / R）。

公开(公告)号：US07961442B2

公开(公告)日：2011-06-14

申请号：US11947315

申请日：2007-11-29

申请人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone

发明人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone

IPC分类号： G11B5/39

CPC分类号： H01F10/3254 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/0005 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/31678

摘要： A tunneling magnetic detecting element includes an insulating barrier layer having a layered structure including a Ti—O sublayer and a Ta—O sublayer. The Ta concentration in the insulating barrier layer is set to be more than 0 at % but not more than about 7 at % with respect to a total of 100 at % of Ti and Ta constituting the insulating barrier layer.

摘要翻译： 隧道磁检测元件包括具有包括Ti-O子层和Ta-O子层的层状结构的绝缘阻挡层。 绝缘阻挡层中的Ta浓度相对于构成绝缘阻挡层的Ti和Ta的总和为100at％，设定为大于0at％但不大于约7at％。

公开(公告)号：US07916436B2

公开(公告)日：2011-03-29

申请号：US11890086

申请日：2007-08-03

申请人： Masahiko Ishizone ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Kazumasa Nishimura

发明人： Masahiko Ishizone ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Kazumasa Nishimura

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3277 ,  H01F10/3295 ,  H01F41/303 ,  H01L43/08

摘要： A tunneling magnetic sensor includes a platinum layer between a pinned magnetic layer and an insulating barrier layer. The platinum layer can probably vary the barrier height (potential height) and barrier width (potential width) of the insulating barrier layer to reduce the absolute value of VCR, thus providing higher operating stability than known tunneling magnetic sensors. In addition, the insulating barrier layer can achieve increased flatness at its bottom interface (where the insulating barrier layer starts to be formed). The tunneling magnetic sensor can therefore provide a higher rate of resistance change (ΔR/R) at low RA than known tunneling magnetic sensors.

摘要翻译： 隧道磁传感器包括在钉扎磁性层和绝缘阻挡层之间的铂层。 铂层可能改变绝缘阻挡层的势垒高度（势高）和势垒宽度（电位宽度），以降低VCR的绝对值，从而提供比已知的隧道磁传感器更高的操作稳定性。 此外，绝缘阻挡层可以在其底部界面（其中开始形成绝缘阻挡层）时实现增加的平坦度。 因此，隧道磁传感器可以在低RA处提供比已知的隧道磁传感器更高的电阻变化率（＆Dgr; R / R）。