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    DETECTION DEVICE MANUFACTURING METHOD, DETECTION DEVICE, AND DETECTION SYSTEM
    11.
    发明申请
    DETECTION DEVICE MANUFACTURING METHOD, DETECTION DEVICE, AND DETECTION SYSTEM 有权
    检测装置制造方法，检测装置和检测系统

    公开(公告)号：US20120305785A1

    公开(公告)日：2012-12-06

    申请号：US13477472

    申请日：2012-05-22

    申请人： Kentaro Fujiyoshi ,  Chiori Mochizuki ,  Minoru Watanabe ,  Masato Ofuji ,  Keigo Yokoyama ,  Jun Kawanabe ,  Hiroshi Wayama

    发明人： Kentaro Fujiyoshi ,  Chiori Mochizuki ,  Minoru Watanabe ,  Masato Ofuji ,  Keigo Yokoyama ,  Jun Kawanabe ,  Hiroshi Wayama

    IPC分类号： G01T1/24 ,  H01L27/14 ,  H01L31/18

    CPC分类号： H01L27/14687 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14676

    摘要： In a method of manufacturing a detection device including a plurality of pixels arrayed on a substrate, the pixels each including a switch element and a conversion element including an impurity semiconductor layer disposed on an electrode, which is disposed above the switch element, which is isolated per pixel, and which is made of a transparent conductive oxide joined to the switch element, and further including an interlayer insulating layer, which is made of an organic material, which is disposed between the switch elements and the electrodes, and which covers the switch elements, the method includes insulating members each made of an inorganic material and disposed to cover the interlayer insulating layer between adjacent two of the electrodes in contact with the interlayer insulating layer, and forming an impurity semiconductor film covering the insulating members and the electrodes and becoming the impurity semiconductor layer.

    摘要翻译： 在制造包括排列在基板上的多个像素的检测装置的方法中，每个像素包括开关元件和转换元件，转换元件包括设置在开关元件上方的电极上的杂质半导体层，该杂质半导体层被隔离 并且由连接到开关元件的透明导电氧化物制成，并且还包括设置在开关元件和电极之间的由有机材料制成并且覆盖开关的层间绝缘层 元件，该方法包括各自由无机材料制成的绝缘构件，并设置成覆盖与层间绝缘层接触的相邻的两个电极之间的层间绝缘层，并且形成覆盖绝缘构件和电极的杂质半导体膜，并成为 杂质半导体层。

    Matrix substrate, detection device, detection system, and method for driving detection device
    13.
    发明授权
    Matrix substrate, detection device, detection system, and method for driving detection device 有权
    矩阵基板，检测装置，检测系统和驱动检测装置的方法

    公开(公告)号：US08822939B2

    公开(公告)日：2014-09-02

    申请号：US13323187

    申请日：2011-12-12

    申请人： Chiori Mochizuki ,  Minoru Watanabe ,  Keigo Yokoyama ,  Masato Ofuji ,  Jun Kawanabe ,  Kentaro Fujiyoshi ,  Hiroshi Wayama

    发明人： Chiori Mochizuki ,  Minoru Watanabe ,  Keigo Yokoyama ,  Masato Ofuji ,  Jun Kawanabe ,  Kentaro Fujiyoshi ,  Hiroshi Wayama

    IPC分类号： G01G5/00 ,  H01L27/146 ,  G09G3/36

    CPC分类号： H01L27/14663 ,  G09G3/3659

    摘要： A matrix substrate which realizes high operation speed and high reliability and which is capable of obtaining a high-quality image while the number of connection terminals is limited is provided. The matrix substrate includes pixels arranged in a matrix, N driving lines arranged in a row direction, P connection terminals where P is less than N, a demultiplexer which is disposed between the connection terminals and the driving lines and which includes first polycrystalline semiconductor TFTs and first connection terminals. The demultiplexer further includes second polycrystalline semiconductor TFTs and the second control lines used to maintain the driving lines to have non-selection voltages which bring the pixels to non-selection states between one of the connection terminals and two or more of the driving lines.

    摘要翻译： 提供实现高操作速度和高可靠性并且能够在连接端子数量受限的同时获得高质量图像的矩阵基板。 矩阵基板包括排列成矩阵的像素，排列成行方向的N个驱动线，P小于N的P个连接端子，配置在连接端子与驱动线之间并且包括第一多晶半导体TFT的多路分离器， 第一连接端子。 解复用器还包括第二多晶半导体TFT和第二控制线，其用于将驱动线保持为具有非选择电压，这些非选择电压将像素连接到一个连接端子和两个或更多个驱动线之间的非选择状态。

    Radiation detection apparatus and detection system including same
    14.
    发明授权
    Radiation detection apparatus and detection system including same 有权
    辐射检测装置及其检测系统

    公开(公告)号：US08680478B2

    公开(公告)日：2014-03-25

    申请号：US13544105

    申请日：2012-07-09

    申请人： Masato Ofuji ,  Chiori Mochizuki ,  Minoru Watanabe ,  Keigo Yokoyama ,  Jun Kawanabe ,  Kentaro Fujiyoshi ,  Hiroshi Wayama

    发明人： Masato Ofuji ,  Chiori Mochizuki ,  Minoru Watanabe ,  Keigo Yokoyama ,  Jun Kawanabe ,  Kentaro Fujiyoshi ,  Hiroshi Wayama

    IPC分类号： G01J1/42 ,  G01T1/00 ,  H04N3/14 ,  H04N5/335

    CPC分类号： H04N5/3765 ,  H01L27/14609 ,  H01L27/14663 ,  H01L27/14692 ,  H04N5/32

    摘要： A detection apparatus includes a driving circuit unit in which a plurality of unit circuits each including a first circuit that supplies conducting voltage of a switch element of a pixel based on voltage included in a clock signal to a driving wire in accordance with an initiation signal and a second circuit that supplies non-conducting voltage of the switch element to the driving wire in accordance with a termination signal are provided for the plurality of corresponding driving wires and a control unit that supplies the clock signal to the driving circuit unit. The control unit supplies control voltage to the plurality of unit circuits, and each of the plurality of unit circuits further includes a third circuit that continues to supply the non-conducting voltage to the corresponding driving wire in accordance with the control voltage.

    摘要翻译： 检测装置包括驱动电路单元，其中多个单元电路各自包括第一电路，该第一电路根据启动信号将基于时钟信号中包含的电压的像素的开关元件的导通电压提供给驱动线， 为多个相应的驱动线提供了根据终止信号将开关元件的非导通电压提供给驱动线的第二电路，以及将时钟信号提供给驱动电路单元的控制单元。 控制单元向多个单元电路提供控制电压，并且多个单元电路中的每一个还包括第三电路，其继续根据控制电压向相应的驱动线提供非导通电压。

    Detection device manufacturing method using impurity semiconductor layer in arrayed pixels
    15.
    发明授权
    Detection device manufacturing method using impurity semiconductor layer in arrayed pixels 有权
    在阵列像素中使用杂质半导体层的检测器件制造方法

    公开(公告)号：US08586399B2

    公开(公告)日：2013-11-19

    申请号：US13477401

    申请日：2012-05-22

    申请人： Kentaro Fujiyoshi ,  Chiori Mochizuki ,  Minoru Watanabe ,  Masato Ofuji ,  Keigo Yokoyama ,  Jun Kawanabe ,  Hiroshi Wayama

    发明人： Kentaro Fujiyoshi ,  Chiori Mochizuki ,  Minoru Watanabe ,  Masato Ofuji ,  Keigo Yokoyama ,  Jun Kawanabe ,  Hiroshi Wayama

    IPC分类号： H01L21/00

    CPC分类号： H01L27/1461 ,  H01L27/1462 ,  H01L27/14676 ,  H01L27/14685 ,  H01L27/14692

    摘要： In a method of manufacturing a detection device including pixels on a substrate, each pixel including a switch element and a conversion element including an impurity semiconductor layer on an electrode, which is disposed above the switch element and isolated per pixel, the switch element and the electrode being connected in a contact hole formed in a protection layer and an interlayer insulating layer, which are disposed between the switch elements and the electrodes, the method includes forming insulating members over the interlayer insulating layer between the electrodes in contact with the interlayer insulating layer, forming an impurity semiconductor film covering the insulating members and the electrodes, and forming a coating layer covering an area of the protection layer where an orthographically-projected image of a portion of the electrode is positioned, the portion including a level difference within the contact hole.

    摘要翻译： 在制造包括衬底上的像素的检测装置的方法中，每个像素包括开关元件和包括电极上的杂质半导体层的转换元件，该电容器设置在开关元件上方并且每像素隔离开关元件和 电极被连接在形成在保护层和层间绝缘层中的接触孔中，所述接触孔设置在开关元件和电极之间，该方法包括在与层间绝缘层接触的电极之间的层间绝缘层上形成绝缘构件 形成覆盖所述绝缘构件和所述电极的杂质半导体膜，以及形成覆盖所述电极的一部分的正投影像的所述保护层的区域的覆盖层，所述部分包括所述触点内的电平差 孔。

    DETECTION APPARATUS AND DETECTION SYSTEM
    17.
    发明申请
    DETECTION APPARATUS AND DETECTION SYSTEM 有权
    检测装置和检测系统

    公开(公告)号：US20130099093A1

    公开(公告)日：2013-04-25

    申请号：US13610472

    申请日：2012-09-11

    申请人： Jun Kawanabe ,  Chiori Mochizuki ,  Minoru Watanabe ,  Masato Ofuji ,  Keigo Yokoyama ,  Kentaro Fujiyoshi ,  Hiroshi Wayama

    发明人： Jun Kawanabe ,  Chiori Mochizuki ,  Minoru Watanabe ,  Masato Ofuji ,  Keigo Yokoyama ,  Kentaro Fujiyoshi ,  Hiroshi Wayama

    IPC分类号： G01J1/44 ,  H01L27/00

    CPC分类号： H01L27/14609 ,  H01L27/14665

    摘要： A detection apparatus includes a transistor disposed on a substrate, a conversion element disposed above the transistor and connected to the transistor, a capacitor connected in parallel with conversion element to the transistor, the capacitor including, between the substrate and the conversion element, an ohmic contact part connected to the conversion element, a semiconductor part connected to the ohmic contact part, and an electrically conductive part disposed at a location opposite to the semiconductor part and the ohmic contact part via an insulating layer, and a potential supplying unit configured to selectively supply a first electric potential to the electrically conductive part to accumulate charge carriers in the semiconductor part and a second electric potential to the electrically conductive part to deplete the semiconductor part. The detection apparatus configured in the above-described manner is capable of controlling pixel capacitance thereby achieving a high signal-to-noise ratio.

    摘要翻译： 检测装置包括设置在基板上的晶体管，设置在晶体管上方并连接到晶体管的转换元件，与转换元件并联连接到晶体管的电容器，电容器包括在基板和转换元件之间的欧姆 连接到转换元件的接触部分，连接到欧姆接触部分的半导体部分和经由绝缘层设置在与半导体部分和欧姆接触部分相对的位置处的导电部分，以及电位供给单元，被配置为选择性地 向导电部分提供第一电位，以将半导体部件中的电荷载流子积累，并且向导电部件累积第二电位以耗尽半导体部件。 以上述方式配置的检测装置能够控制像素电容，从而实现高的信噪比。

    METHOD FOR MANUFACTURING DETECTOR, RADIATION DETECTION APPARATUS INCLUDING DETECTOR MANUFACTURED THEREBY, AND RADIATION DETECTION SYSTEM
    18.
    发明申请
    METHOD FOR MANUFACTURING DETECTOR, RADIATION DETECTION APPARATUS INCLUDING DETECTOR MANUFACTURED THEREBY, AND RADIATION DETECTION SYSTEM 审中-公开
    用于制造检测器的方法，包括其制造的检测器的辐射检测装置和辐射检测系统

    公开(公告)号：US20120261581A1

    公开(公告)日：2012-10-18

    申请号：US13444560

    申请日：2012-04-11

    申请人： Kentaro Fujiyoshi ,  Chiori Mochizuki ,  Minoru Watanabe ,  Keigo Yokoyama ,  Masato Ofuji ,  Jun Kawanabe ,  Hiroshi Wayama

    发明人： Kentaro Fujiyoshi ,  Chiori Mochizuki ,  Minoru Watanabe ,  Keigo Yokoyama ,  Masato Ofuji ,  Jun Kawanabe ,  Hiroshi Wayama

    IPC分类号： G01T1/20 ,  H01L31/18

    CPC分类号： H01L27/14632 ,  H01L27/14687

    摘要： A method is provided for manufacturing a high-performance plane-type detector without the increase in cost or decrease in yield accompanying the increase in the number of masks. The method includes the first step of forming a first electrode and a control electrode from a first electroconductive film deposited on a substrate, the second step of depositing an insulating film and a semiconductor film in that order after the first step, the third step of depositing an impurity semiconductor film and a second electroconductive film in that order after the second step, and forming a common electrode wire and a first electroconductive member from the second electroconductive film, and the fourth step of forming with the same mask a second electrode and a second electroconductive member from a transparent electroconductive oxide film formed after the third step, and impurity semiconductor layers from the impurity semiconductor film.

    摘要翻译： 提供了一种用于制造高性能平面型检测器的方法，而不增加成本或随着掩模数量的增加而产量降低。 该方法包括从沉积在基板上的第一导电膜形成第一电极和控制电极的第一步骤，在第一步骤之后依次沉积绝缘膜和半导体膜的第二步骤，第三步骤 杂质半导体膜和第二导电膜，并且从第二导电膜形成公共电极线和第一导电构件，第四步骤，用相同的掩模形成第二电极和第二导电膜 来自在第三步骤之后形成的透明导电氧化物膜的导电构件和来自杂质半导体膜的杂质半导体层。

    RADIATION DETECTING APPARATUS, RADIATION DETECTING SYSTEM, AND METHOD OF MANUFACTURING RADIATION DETECTING APPARATUS
    19.
    发明申请
    RADIATION DETECTING APPARATUS, RADIATION DETECTING SYSTEM, AND METHOD OF MANUFACTURING RADIATION DETECTING APPARATUS 审中-公开
    辐射检测装置，辐射检测系统及制造辐射检测装置的方法

    公开(公告)号：US20120181438A1

    公开(公告)日：2012-07-19

    申请号：US13328915

    申请日：2011-12-16

    申请人： Minoru Watanabe ,  Chiori Mochizuki ,  Keigo Yokoyama ,  Jun Kawanabe ,  Kentaro Fujiyoshi ,  Hiroshi Wayama

    发明人： Minoru Watanabe ,  Chiori Mochizuki ,  Keigo Yokoyama ,  Jun Kawanabe ,  Kentaro Fujiyoshi ,  Hiroshi Wayama

    IPC分类号： G01T1/20 ,  H01L33/50

    CPC分类号： G01T1/2018

    摘要： A radiation detecting apparatus includes a scintillator, a plurality of photoelectric conversion elements, and a substrate having a first surface opposing the scintillator and a second surface opposite from the first surface. The substrate, the photoelectric conversion elements and the scintillator are arranged in this order from the side of the radiation detecting apparatus where radiation enters, and the second surface includes a plurality of depressions arranged in orthogonal projection areas where orthogonal projections of the plurality of projected photoelectric conversion elements are positioned and projections parts of which are positioned in the orthogonal projection areas and the remaining areas other than the parts of which are positioned between the orthogonal projection areas.

    摘要翻译： 辐射检测装置包括闪烁体，多个光电转换元件和具有与闪烁体相对的第一表面的基板和与第一表面相对的第二表面。 基板，光电转换元件和闪烁体从放射线入射的放射线检测装置的一侧依次排列，第二表面包括多个凹凸，布置在正交投影区域中，其中多个投影光电 转换元件被定位并且其突出部分位于正交投影区域中，并且除了其部分之外的其余区域位于正交投影区域之间。

    Detection apparatus and radiation detection system
    20.
    发明授权
    Detection apparatus and radiation detection system 有权
    检测仪器和放射线检测系统

    公开(公告)号：US08405039B2

    公开(公告)日：2013-03-26

    申请号：US13231189

    申请日：2011-09-13

    申请人： Kentaro Fujiyoshi ,  Chiori Mochizuki ,  Minoru Watanabe ,  Takamasa Ishii ,  Jun Kawanabe ,  Hiroshi Wayama

    发明人： Kentaro Fujiyoshi ,  Chiori Mochizuki ,  Minoru Watanabe ,  Takamasa Ishii ,  Jun Kawanabe ,  Hiroshi Wayama

    IPC分类号： G01T1/24 ,  G01T1/20

    CPC分类号： G01T1/247 ,  G01T1/24 ,  H01L27/14663 ,  H04N5/32

    摘要： A stacked-type detection apparatus includes a plurality of pixels arranged in a matrix having row and column directions. Each pixel includes a conversion element configured to convert radiation or light into an electric charge, and a switch element configured to output an electric signal corresponding to the electric charge. A driving line is connected to switch elements arranged in the row direction, and a signal line is connected to switch elements arranged in the column direction. In each pixel, the conversion element is disposed above the switch element. The signal line is formed by a conductive layer embedded in an insulating layer located below an uppermost surface portion of a main electrode of the switch element located below an uppermost surface portion of the driving line located below the conversion element.

    摘要翻译： 层叠型检测装置包括排列成具有列和列方向的矩阵的多个像素。 每个像素包括被配置为将辐射或光转换为电荷的转换元件，以及被配置为输出对应于电荷的电信号的开关元件。 驱动线连接到沿行方向布置的开关元件，并且信号线连接到沿列方向布置的开关元件。 在每个像素中，转换元件设置在开关元件上方。 信号线由位于位于位于转换元件下方的驱动线的最上表面下方的开关元件的主电极的最上表面部分下方的绝缘层中的导电层形成。