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11.发明授权公开(公告)号：US07488948B2
公开(公告)日：2009-02-10
申请号：US10576349
申请日：2004-11-10
IPC分类号： G01T1/20
CPC分类号： H04N5/3745 , H01L27/14632 , H01L27/14658 , H01L27/14663 , H04N5/35527
摘要： Sensitivity is freely changeable to another one in correspondence to a photographing mode, and both still image photographing and moving image photographing for example which are largely different from each other in dosage of exposure to radiation and which are also different from each other in required sensitivity are carried out so as to meet that request. A source or drain electrode of a TFT 21 is connected to a signal output circuit 3 through a signal line 14a and an IC 5. A source/drain of a TFT 23 is connected to the signal output circuit 3 through a signal line 14b and the IC 5. Thus, in each pixel 6, any one of the signal lines 14a and 14b is freely selectable when a signal is read out.
摘要翻译： 灵敏度可自由地变化为与拍摄模式相对应的灵敏度，并且静止图像拍摄和例如在暴露于辐射的剂量中彼此大不相同并且在所需灵敏度上彼此不同的动态图像拍摄中， 进行，以满足这一要求。 TFT21的源极或漏极通过信号线14a和IC5连接到信号输出电路3. TFT 23的源极/漏极通过信号线14b连接到信号输出电路3，并且 因此，在每个像素6中，当读出信号时，信号线14a和14b中的任何一个可以自由地选择。
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公开(公告)号：US20060071251A1
公开(公告)日：2006-04-06
申请号：US10538774
申请日：2004-02-10
IPC分类号： H01L31/113
CPC分类号： H01L27/12 , H01L27/14643 , H04N5/32
摘要： In a solid state image pickup apparatus with a photodetecting device and one or more thin film transistors connected to the photodetecting device formed in one pixel, a part of the photodetecting device is formed over at least a part of the thin film transistor, and the thin film transistor is constructed by a source electrode, a drain electrode, a first gate electrode, and a second gate electrode arranged on the side opposite to the first gate electrode with respect to the source electrode and the drain electrode, and the first gate electrode is connected to the second gate electrode every pixel, thereby, suppressing an adverse effect of the photodetecting device on the TFT, a leakage at turn-off TFT, variation in a threshold voltage of the TFT due to an external electric field, and accurately transferring photo carrier to a signal processing circuit.
摘要翻译： 在具有与一个像素形成的受光器件连接的受光器件和一个以上的薄膜晶体管的固态摄像装置中，在所述薄膜晶体管的至少一部分上形成有所述受光器件的一部分， 薄膜晶体管由源电极，漏电极，第一栅电极和第二栅电极构成，第二栅电极相对于源电极和漏极布置在与第一栅电极相反的一侧，第一栅极为 连接到每个像素的第二栅电极，从而抑制光检测器件对TFT的不利影响，关断TFT处的泄漏，由于外部电场引起的TFT的阈值电压的变化，以及精确地传输照片 载波到信号处理电路。
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13.发明申请Radiographic imaging substrate, radiographic imaging apparatus, and radiographic imaging system 失效射线照相成像基片，放射成像装置和放射成像系统公开(公告)号：US20050274991A1
公开(公告)日：2005-12-15
申请号：US11147182
申请日：2005-06-08
IPC分类号： G01T1/20 , G01T1/24 , H01L27/14 , H01L27/144 , H01L27/146 , H01L27/148 , H01L31/09 , H04N5/32 , H04N5/335 , H04N5/369 , H04N5/374 , H04N5/376
CPC分类号： H01L27/14636 , H01L27/14603 , H01L27/14609 , H01L27/14663 , H01L27/14676 , H01L27/14687
摘要： A radiographic imaging apparatus, comprising: a photoelectric conversion substrate including a pixel area where there are arranged a plurality of pixels each formed of a photoelectric conversion element and a switching element connected to the photoelectric conversion element in a matrix formed on an insulating substrate, a bias line for applying a bias to the photoelectric conversion element, a gate line for supplying a driving signal to the switching element, and a signal line for reading electric charges converted in the photoelectric conversion element; a wavelength conversion element for converting radiation to light that can be detected by the photoelectric conversion element, the wavelength conversion element being disposed according to a region including the pixel area; and connection wiring having a photoelectric conversion layer connected to at least a plurality of lines of one type, that one type being, the bias lines, the signal lines, and the gate lines, wherein at least a part of the connection wiring is arranged between the region on the insulating substrate and an edge of the insulating substrate. With this arrangement, it becomes possible to provide a panel for a radiographic imaging apparatus and a radiographic imaging apparatus free from deterioration in device performance and device destruction caused by a static electricity even if a substrate is electrically charged in a manufacturing process.
摘要翻译： 一种放射线摄影成像装置，包括：光电转换基板，包括像素区域，其中排列有由光电转换元件形成的多个像素和连接到形成在绝缘基板上的矩阵中的光电转换元件的开关元件， 用于向光电转换元件施加偏压的偏置线，用于向开关元件提供驱动信号的栅极线和用于读取在光电转换元件中转换的电荷的信号线; 波长转换元件，用于将辐射转换成能够由光电转换元件检测的光，所述波长转换元件根据包括像素区域的区域设置; 以及连接布线，其具有连接到至少一种类型的多条线的光电转换层，所述光电转换层的一种类型是偏置线，信号线和栅极线，其中至少一部分连接布线布置在 绝缘基板上的区域和绝缘基板的边缘。 利用这种布置，即使在制造过程中基板被充电，也可以提供一种用于放射线照相成像装置和放射线照相成像装置的面板，其不会因静电而导致的装置性能和装置破坏的劣化。
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14.发明授权Radiation detecting apparatus, manufacturing method therefor, and radiation image pickup system 失效辐射检测装置及其制造方法以及放射线摄像系统公开(公告)号：US07521684B2
公开(公告)日：2009-04-21
申请号：US11723462
申请日：2007-03-20
IPC分类号： G01J1/00
CPC分类号： H01L27/14609 , H01L27/14676 , H01L27/14692
摘要： The present invention provides a radiation detecting apparatus having a radiation conversion element laminated on a switch TFT, including a gate electrode of the switch TFT; a first insulating layer, a first semiconductor layer, and an ohmic contact layer, which are laminated on the gate electrode in order; and a source/drain electrode of the switch TFT laminated on the ohmic contact layer, which all constitute the switch TFT; and a lower electrode of the radiation conversion element, which is formed on the same layer as the source/drain electrode; a second insulating layer, a second semiconductor layer, and a second ohmic contact layer, which are laminated on the lower electrode in order; and a bias wiring for applying a bias to the radiation conversion element. Also, the invention provides a radiation image pickup apparatus including a photoelectric conversion element having a wavelength converter for converting a radiation into a visible light, a pixel electrode for converting the visible light into an electric signal, an insulating layer, and a semiconductor layer; and a transistor for controlling reading of the electric signal converted by the photoelectric conversion element, the photoelectric conversion element being laminated on the wavelength converter side of the transistor, the pixel electrode being divided for each of plural pixels, and the semiconductor layer extending over the plural pixels.
摘要翻译： 本发明提供一种放射线检测装置，具有叠层在开关TFT上的辐射转换元件，包括开关TFT的栅电极; 第一绝缘层，第一半导体层和欧姆接触层，依次层叠在栅电极上; 以及层叠在欧姆接触层上的开关TFT的源极/漏极，其全部构成开关TFT; 和辐射转换元件的下电极，其形成在与源/漏电极相同的层上; 第二绝缘层，第二半导体层和第二欧姆接触层，它们依次层压在下电极上; 以及用于向辐射转换元件施加偏压的偏置布线。 另外，本发明提供了一种包括具有将辐射转换为可见光的波长转换器的光电转换元件，将可见光转换为电信号的像素电极，绝缘层和半导体层的放射线摄像装置; 以及晶体管，用于控制由所述光电转换元件转换的电信号的读取，所述光电转换元件层叠在所述晶体管的波长转换器侧，所述像素电极被分割为多个像素，并且所述半导体层延伸越过 多个像素。
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15.发明授权Radiation detecting apparatus, manufacturing method therefor, and radiation image pickup system 有权辐射检测装置及其制造方法以及放射线摄像系统公开(公告)号：US07214945B2
公开(公告)日：2007-05-08
申请号：US10455457
申请日：2003-06-06
IPC分类号： G01J1/00
CPC分类号： H01L27/14609 , H01L27/14676 , H01L27/14692
摘要： A radiation detecting apparatus having a radiation conversion element arranged on a switch TFT is provided. The apparatus includes a gate electrode of the switch TFT; a first insulating layer, a first semiconductor layer, and an ohmic contact layer, which are arranged on the gate electrode in order; and a source/drain electrode of the switch TFT arranged on the ohmic contact layer, which all constitute the switch TFT. The apparatus also includes a lower electrode of the radiation conversion element formed from the same layer as the source/drain electrode, a second insulating layer, a second semiconductor layer, and a second ohmic contact layer, which are arranged on the lower electrode in order, and a bias wiring for applying a bias voltage to the radiation conversion element.
摘要翻译： 提供具有布置在开关TFT上的辐射转换元件的放射线检测装置。 该装置包括开关TFT的栅电极; 第一绝缘层，第一半导体层和欧姆接触层，其依次布置在栅电极上; 以及布置在欧姆接触层上的开关TFT的源极/漏极，其全部构成开关TFT。 该装置还包括由与源/漏电极相同的层形成的辐射转换元件的下电极，第二绝缘层，第二半导体层和第二欧姆接触层，其按顺序设置在下电极上 以及用于向辐射转换元件施加偏置电压的偏置布线。
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公开(公告)号：US20060255239A1
公开(公告)日：2006-11-16
申请号：US11486102
申请日：2006-07-14
IPC分类号： H01J40/14
CPC分类号： H01L27/14643 , H01L27/14676
摘要： In an image pick-up apparatus, a plurality of pixels, each pairing a semiconductor conversion element for converting an incident electromagnetic wave to an electric signal and a thin film transistor connected to the semiconductor conversion element, is arranged in a two-dimensional state on a substrate. The image pick-up apparatus includes gate wiring to which gate electrodes of thin film transistors of a plurality of pixels arranged in one direction are commonly connected, and signal wiring to which source electrodes or drain electrodes of thin film transistors of a plurality of pixels arranged in a direction different from the one direction are commonly connected on the substrate. Protection layers are arranged on the thin film transistors, the gate wiring and the signal wiring. The protection layers formed at least at the same time. Then, the protection layers are removed in at least a part or all of regions in which the semiconductor conversion elements are formed.
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17.发明申请公开(公告)号：US20050263709A1
公开(公告)日：2005-12-01
申请号：US10954194
申请日：2004-10-01
IPC分类号： G01T1/20 , A61B6/00 , G01T1/24 , H01L27/14 , H01L27/146 , H01L31/036 , H04N5/32
CPC分类号： H01L27/14643 , H01L27/14676
摘要： In an image pick-up apparatus, a plurality of pixels, each pairing a semiconductor conversion element for converting an incident electromagnetic wave to an electric signal and a thin film transistor connected to the semiconductor conversion element, is arranged in a two-dimensional state on a substrate. The image pick-up apparatus includes gate wiring to which gate electrodes of thin film transistors of a plurality of pixels arranged in one direction are commonly connected, and signal wiring to which source electrodes or drain electrodes of thin film transistors of a plurality of pixels arranged in a direction different from the one direction are commonly connected on the substrate. Protection layers are arranged on the thin film transistors, the gate wiring and the signal wiring. The protection layers formed at least at the same time. Then, the protection layers are removed in at least a part or all of regions in which the semiconductor conversion elements are formed.
摘要翻译： 在图像拾取装置中，将与入射电磁波进行转换的半导体转换元件和电连接的半导体转换元件和与半导体变换元件连接的薄膜晶体管的多个像素配置成二维状态 底物。 图像拾取装置包括栅极配线，多个像素排列的多个像素的薄膜晶体管的栅电极共同连接到该栅极布线，多个像素的薄膜晶体管的源电极或漏电极布置在其上 在与该方向不同的方向上共同连接在基板上。 保护层布置在薄膜晶体管，栅极布线和信号布线上。 保护层至少在同一时间形成。 然后，在其中形成有半导体转换元件的区域的至少一部分或全部中去除保护层。
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公开(公告)号：US07750422B2
公开(公告)日：2010-07-06
申请号：US11685044
申请日：2007-03-12
IPC分类号： H01L31/0224
CPC分类号： H01L27/12 , H01L27/14643 , H04N5/32
摘要： In a solid state image pickup apparatus with a photodetecting device and one or more thin film transistors connected to the photodetecting device formed in one pixel, a part of the photodetecting device is formed over at least a part of the thin film transistor, and the thin film transistor is constructed by a source electrode, a drain electrode, a first gate electrode, and a second gate electrode arranged on the side opposite to the first gate electrode with respect to the source electrode and the drain electrode, and the first gate electrode is connected to the second gate electrode every pixel, thereby, suppressing an adverse effect of the photodetecting device on the TFT, a leakage at turn-off TFT, variation in a threshold voltage of the TFT due to an external electric field, and accurately transferring photo carrier to a signal processing circuit.
摘要翻译： 在具有与一个像素形成的受光器件连接的受光器件和一个以上的薄膜晶体管的固态摄像装置中，在所述薄膜晶体管的至少一部分上形成有所述受光器件的一部分， 薄膜晶体管由源电极，漏电极，第一栅电极和第二栅电极构成，第二栅电极相对于源电极和漏极布置在与第一栅电极相反的一侧，第一栅极为 连接到每个像素的第二栅电极，从而抑制光检测器件对TFT的不利影响，关断TFT处的泄漏，由于外部电场引起的TFT的阈值电压的变化，以及精确地传输照片 载波到信号处理电路。
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19.发明申请RADIATION IMAGE PICK-UP DEVICE AND METHOD THEREFOR, AND RADIATION IMAGE PICK-UP SYSTEM 有权辐射图像拍摄装置及其方法，以及辐射图像拾取系统公开(公告)号：US20090185659A1
公开(公告)日：2009-07-23
申请号：US12349733
申请日：2009-01-07
CPC分类号： H04N5/3745 , H01L27/14632 , H01L27/14658 , H01L27/14663 , H04N5/35527
摘要： Sensitivity is freely changeable to another one in correspondence to a photographing mode, and both still image photographing and moving image photographing for example which are largely different from each other in dosage of exposure to radiation and which are also different from each other in required sensitivity are carried out so as to meet that request. A source or drain electrode of a TFT 21 is connected to a signal output circuit 3 through a signal line 14a and an IC 5. A source/drain of a TFT 23 is connected to the signal output circuit 3 through a signal line 14b and the IC 5. Thus, in each pixel 6, any one of the signal lines 14a and 14b is freely selectable when a signal is read out.
摘要翻译： 灵敏度可自由地变化为与拍摄模式相对应的灵敏度，并且静止图像拍摄和例如在暴露于辐射的剂量中彼此大不相同并且在所需灵敏度上彼此不同的动态图像拍摄中， 进行，以满足这一要求。 TFT21的源极或漏极通过信号线14a和IC5连接到信号输出电路3. TFT 23的源极/漏极通过信号线14b连接到信号输出电路3，并且 因此，在每个像素6中，当读出信号时，信号线14a和14b中的任何一个可以自由地选择。
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公开(公告)号：US20090040310A1
公开(公告)日：2009-02-12
申请号：US12245391
申请日：2008-10-03
IPC分类号： H04N5/335
CPC分类号： H04N5/32 , H01L27/14603 , H01L27/14658
摘要： A solid-state image pickup device according to the present invention has a plurality of photoelectric conversion elements and a plurality of switching elements. The photoelectric conversion element is formed above at least one switching element, and a shielding electrode layer is disposed between the switching elements and the photoelectric conversion elements. Further, a radiation image pickup device according to the present invention has a radiation conversion layer for directly converting radiation into electric charges, and a plurality of switching elements, and has the radiation conversion layer formed above one or more switching elements, and a shielding electrode layer disposed between the switching elements and the radiation conversion layer.
摘要翻译： 根据本发明的固态图像拾取装置具有多个光电转换元件和多个开关元件。 光电转换元件形成在至少一个开关元件上方，并且屏蔽电极层设置在开关元件和光电转换元件之间。 此外，根据本发明的放射线摄像装置具有用于将辐射直接转换为电荷的辐射转换层和多个开关元件，并且具有形成在一个或多个开关元件上方的辐射转换层和屏蔽电极 层之间设置在开关元件和辐射转换层之间。
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