公开(公告)号：US07821485B2

公开(公告)日：2010-10-26

申请号：US11245279

申请日：2005-10-06

Applicant: Ki-joon Kim

Inventor： Ki-joon Kim

IPC: G09G3/36

CPC classification number: G09G3/3688 ,  G09G2310/0248 ,  G09G2330/023

Abstract: A source driver output circuit of a thin film transistor (TFT) liquid crystal display (LCD) includes first through n-th voltage generators, first through n-th switching portions, first through n-th sub switching portions, and a switching circuit. The voltage generators receive first through n-th corresponding input voltages and generate first through n-th sub input voltages. The switching portions generate the sub input voltages as first through n-th corresponding output voltages when activated, or cut off the sub input voltages when deactivated. The sub switching portions connect predetermined share lines to the output voltages when activated, or cut off the predetermined share lines when deactivated. The switching circuit maintains each of the share line voltages equally at an intermediate voltage level that is between the share line voltages. Therefore, the slew rate of a signal input to the panel from the source driver can be improved, and current consumption in the source driver can be reduced.

Abstract translation: 薄膜晶体管（TFT）液晶显示器（LCD）的源极驱动器输出电路包括第一至第n电压发生器，第一至第n开关部分，第一至第N子切换部分和开关电路。 电压发生器接收第一至第n对应的输入电压，并产生第一至第n子输入电压。 开关部分在激活时产生作为第一至第n对应的输出电压的子输入电压，或者在去激活时切断子输入电压。 子开关部分在激活时将预定的共享线路连接到输出电压，或者在停用时切断预定共享线路。 开关电路将共享线路电压中的每一个均等于在共享线路电压之间的中间电压电平。 因此，可以提高从源极驱动器输入到面板的信号的转换速率，并且可以减少源极驱动器中的电流消耗。

公开(公告)号：US20070170881A1

公开(公告)日：2007-07-26

申请号：US11509001

申请日：2006-08-24

Applicant: Jin-seo Noh ,  Ki-joon Kim ,  Yoon-ho Khang

Inventor： Jin-seo Noh ,  Ki-joon Kim ,  Yoon-ho Khang

IPC: H02H7/08

CPC classification number: G11C13/0069 ,  G11C13/0004 ,  G11C2013/0078 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1625

Abstract: A phase change memory device includes a switch and a storage node connected to the switch. The storage node includes a first electrode, a phase change layer and a second electrode. The phase change layer is formed of an InSbTe compound doped with Ge. In a method of operating a phase change memory including a switch and a storage node, the switch is maintained in an on state, and a first current is applied to the storage node.

Abstract translation: 相变存储器件包括开关和连接到开关的存储节点。 存储节点包括第一电极，相变层和第二电极。 相变层由掺杂有Ge的InSbTe化合物形成。 在操作包括开关和存储节点的相变存储器的方法中，将开关保持在接通状态，并且将第一电流施加到存储节点。

公开(公告)号：US20120099371A1

公开(公告)日：2012-04-26

申请号：US13343383

申请日：2012-01-04

Applicant: Cheol-kyu KIM ,  Yoon-ho Khang ,  Ki-joon Kim

Inventor： Cheol-kyu KIM ,  Yoon-ho Khang ,  Ki-joon Kim

IPC: G11C11/21

CPC classification number: G11C11/5678 ,  G11C13/0004

Abstract: A method of operating a phase-change memory device including a phase-change layer and a unit applying a voltage to the phase-change layer is provided. The method includes applying a reset voltage to the phase-change layer, wherein the reset voltage includes at least two pulse voltages which are continuously applied.

Abstract translation: 提供一种操作包括相变层和向相变层施加电压的单元的相变存储器件的方法。 该方法包括将复位电压施加到相变层，其中复位电压包括连续施加的至少两个脉冲电压。

公开(公告)号：US07994492B2

公开(公告)日：2011-08-09

申请号：US12232661

申请日：2008-09-22

Applicant: Youn-seon Kang ,  Ki-joon Kim ,  Cheol-kyu Kim ,  Tae-yon Lee

Inventor： Youn-seon Kang ,  Ki-joon Kim ,  Cheol-kyu Kim ,  Tae-yon Lee

IPC: H01L45/00

CPC classification number: H01L45/06 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/148 ,  H01L45/1625

Abstract: Disclosed may be a phase change material alloy, a phase change memory device including the same, and methods of manufacturing and operating the phase change memory device. The phase change material alloy may include Si and Sb. The alloy may be a Si—O—Sb alloy further including O. The Si—O—Sb alloy may be SixOySbz, wherein, when x/(x+z) may be x1, 0.05≦x1≦0.30, 0.00≦y≦0.50, and x+y+z may be 1. The Si—O—Sb alloy may further comprise an element other than Si, O, and Sb.

Abstract translation: 公开了相变材料合金，包括该相变材料合金的相变存储器，以及制造和操作相变存储器件的方法。 相变材料合金可以包括Si和Sb。 该合金可以是进一步包括O的Si-O-Sb合金.Si-O-Sb合金可以是SixOySbz，其中当x /（x + z）可以是x1,0.05＆nlE; x1＆nlE; 0.30,0.00＆ y和nl; 0.50和x + y + z可以为1.Si-O-Sb合金还可以包含除Si，O和Sb以外的元素。

公开(公告)号：US07763886B2

公开(公告)日：2010-07-27

申请号：US11980431

申请日：2007-10-31

Applicant: Yoon-ho Khang ,  Daniel Wamwangi ,  Matthias Wuttig ,  Ki-joon Kim ,  Dong-seok Suh

Inventor： Yoon-ho Khang ,  Daniel Wamwangi ,  Matthias Wuttig ,  Ki-joon Kim ,  Dong-seok Suh

IPC: H01L45/00 ,  C01B19/00

CPC classification number: C01B19/007 ,  C01P2002/52 ,  C01P2006/33 ,  C01P2006/34 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/141

Abstract: Provided are a doped phase change material and a phase change memory device including the phase change material. The phase change material, which may be doped with Se, has a higher crystallization temperature than a Ge2Sb2Te5 (GST) material. The phase change material may be InXSbYTeZSe100−(X+Y+Z). The index X of indium (In) is in the range of 25 wt %≦X≦60 wt %. The index Y of antimony (Sb) is in the range of 1 wt %≦Y≦17 wt %. The index Z of tellurium (Te) is in the range of 0 wt %

Abstract translation: 提供了掺杂相变材料和包括相变材料的相变存储器件。 可以掺杂Se的相变材料具有比Ge2Sb2Te5（GST）材料更高的结晶温度。 相变材料可以是InXSbYTeZSe100-（X + Y + Z）。 铟（In）的指数X在25重量％＆lt; lE; X＆lt; lE; 60重量％的范围内。 锑（Sb）的指数Y在1重量％＆lt; 1E; Y＆lt; 1; 17重量％的范围内。 碲（Te）的指数Z在0重量％

公开(公告)号：US20090196089A1

公开(公告)日：2009-08-06

申请号：US12232661

申请日：2008-09-22

Applicant: Youn-seon Kang ,  Ki-joon Kim ,  Cheol-kyu Kim ,  Tae-yon Lee

Inventor： Youn-seon Kang ,  Ki-joon Kim ,  Cheol-kyu Kim ,  Tae-yon Lee

IPC: G11C11/00 ,  C01B33/113 ,  C01B21/068 ,  H01L45/00

CPC classification number: H01L45/06 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/148 ,  H01L45/1625

Abstract: Disclosed may be a phase change material alloy, a phase change memory device including the same, and methods of manufacturing and operating the phase change memory device. The phase change material alloy may include Si and Sb. The alloy may be a Si—O—Sb alloy further including O. The Si—O—Sb alloy may be SixOySbz, wherein, when x/(x+z) may be x1, 0.05≦x1≦0.30, 0.00≦y≦0.50, and x+y+z may be 1. The Si—O—Sb alloy may further comprise an element other than Si, O, and Sb.

Abstract translation: 公开了相变材料合金，包括该相变材料合金的相变存储器，以及制造和操作相变存储器件的方法。 相变材料合金可以包括Si和Sb。 该合金可以是还包含O的Si-O-Sb合金.Si-O-Sb合金可以是SixOySbz，其中当x /（x + z）可以是x1时，0.05 <= x1 <= 0.30,0.00 < = y <= 0.50，x + y + z可以为1.Si-O-Sb合金还可以包含除Si，O和Sb以外的元素。

公开(公告)号：US20090179185A1

公开(公告)日：2009-07-16

申请号：US12285449

申请日：2008-10-06

Applicant: Youn-seon Kang ,  Daniel Wamwangi ,  Matthias Wuttig ,  Ki-joon Kim ,  Yoon-ho Khang ,  Cheol-kyu Kim ,  Dong-seok Suh ,  Tae-yon Lee

Inventor： Youn-seon Kang ,  Daniel Wamwangi ,  Matthias Wuttig ,  Ki-joon Kim ,  Yoon-ho Khang ,  Cheol-kyu Kim ,  Dong-seok Suh ,  Tae-yon Lee

IPC: H01L47/00 ,  C09K5/00

CPC classification number: H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/148 ,  H01L45/1625

Abstract: A phase change material layer includes antimony (Sb) and at least one of indium (In) and gallium (Ga). A phase change memory device includes a storage node including a phase change material layer and a switching device connected to the storage node. The phase change material layer includes Sb and at least one of In and Ga.

Abstract translation: 相变材料层包括锑（Sb）和铟（In）和镓（Ga）中的至少一种。 相变存储器件包括：存储节点，包括相变材料层和连接到存储节点的开关器件。 相变材料层包括Sb和In和Ga中的至少一种。

公开(公告)号：US20060071898A1

公开(公告)日：2006-04-06

申请号：US11245279

申请日：2005-10-06

Applicant: Ki-joon Kim

Inventor： Ki-joon Kim

IPC: G09G3/36

CPC classification number: G09G3/3688 ,  G09G2310/0248 ,  G09G2330/023

Abstract: A source driver output circuit of a thin film transistor (TFT) liquid crystal display (LCD) includes first through n-th voltage generators, first through n-th switching portions, first through n-th sub switching portions, and a switching circuit. The voltage generators receive first through n-th corresponding input voltages and generate first through n-th sub input voltages. The switching portions generate the sub input voltages as first through n-th corresponding output voltages when activated, or cut off the sub input voltages when deactivated. The sub switching portions connect predetermined share lines to the output voltages when activated, or cut off the predetermined share lines when deactivated. The switching circuit maintains each of the share line voltages equally at an intermediate voltage level that is between the share line voltages. Therefore, the slew rate of a signal input to the panel from the source driver can be improved, and current consumption in the source driver can be reduced.

Abstract translation: 薄膜晶体管（TFT）液晶显示器（LCD）的源极驱动器输出电路包括第一至第n电压发生器，第一至第n开关部分，第一至第N子切换部分和开关电路。 电压发生器接收第一至第n对应的输入电压，并产生第一至第n子输入电压。 开关部分在激活时产生作为第一至第n对应的输出电压的子输入电压，或者在去激活时切断子输入电压。 子开关部分在激活时将预定的共享线路连接到输出电压，或者在停用时切断预定共享线路。 开关电路将共享线路电压中的每一个均等于在共享线路电压之间的中间电压电平。 因此，可以提高从源极驱动器输入到面板的信号的转换速率，并且可以减少源极驱动器中的电流消耗。

公开(公告)号：US06954192B2

公开(公告)日：2005-10-11

申请号：US10283974

申请日：2002-10-30

Applicant: Ki-joon Kim

Inventor： Ki-joon Kim

IPC: G02F1/133 ,  G09G3/20 ,  G09G3/36

CPC classification number: G09G3/3688 ,  G09G2310/0248 ,  G09G2330/023

Abstract: A source driver output circuit of a thin film transistor (TFT) liquid crystal display (LCD) includes first through n-th voltage generators, first through n-th switching portions, first through n-th sub switching portions, and a voltage-generating portion. The voltage generators receive first through n-th corresponding input voltages and generate first through n-th sub input voltages. The switching portions generate the sub input voltages as first through n-th corresponding output voltages when activated, or cut off the sub input voltages when deactivated. The sub switching portions connect predetermined share lines to the output voltages when activated, or cut off the predetermined share lines when deactivated. The voltage-generating portion receives predetermined first and second voltages and applies predetermined precharge voltages to the share lines. Therefore, the slew rate of a signal input to the panel from the source driver can be improved, and current consumption in the source driver can be reduced.

Abstract translation: 薄膜晶体管（TFT）液晶显示器（LCD）的源极驱动器输出电路包括第一至第n电压发生器，第一至第n开关部分，第一至第N子切换部分和产生电压 一部分。 电压发生器接收第一至第n对应的输入电压，并产生第一至第n子输入电压。 开关部分在激活时产生作为第一至第n对应的输出电压的子输入电压，或者在去激活时切断子输入电压。 子开关部分在激活时将预定的共享线路连接到输出电压，或者在停用时切断预定共享线路。 电压产生部分接收预定的第一和第二电压并且向共享线路施加预定的预充电电压。 因此，可以提高从源极驱动器输入到面板的信号的转换速率，并且可以减少源极驱动器中的电流消耗。