Method for manufacturing crystalline semiconductor film
    11.
    发明授权
    Method for manufacturing crystalline semiconductor film 有权
    晶体半导体膜的制造方法

    公开(公告)号:US08216892B2

    公开(公告)日:2012-07-10

    申请号:US13092173

    申请日:2011-04-22

    IPC分类号: H01L21/84

    摘要: There is provided a method for manufacturing a crystalline semiconductor film. An insulating film is formed over a substrate; an amorphous semiconductor film is formed over the insulating film; a cap film is formed over the amorphous semiconductor film; the amorphous semiconductor film is scanned and irradiated with a continuous wave laser beam or a laser beam with a repetition rate of greater than or equal to 10 MHz, through the cap film; and the amorphous semiconductor film is melted and crystallized At this time, an energy distribution in a length direction and a width direction in a laser beam spot is a Gaussian distribution, and the amorphous semiconductor film is scanned with the laser beam so as to be irradiated with the laser beam for a period of greater than or equal to 5 microseconds and less than or equal to 100 microseconds per region.

    摘要翻译: 提供一种制造结晶半导体膜的方法。 在基板上形成绝缘膜; 在绝缘膜上形成非晶半导体膜; 在非晶半导体膜上形成盖膜; 通过盖膜扫描并照射具有大于或等于10MHz的重复率的连续波激光束或激光束的非晶半导体膜; 并且非晶半导体膜熔化和结晶此时,激光束点中的长度方向和宽度方向上的能量分布是高斯分布,并且用激光束扫描非晶半导体膜以便被照射 激光束的周期大于或等于5微秒,并且每个区域小于或等于100微秒。

    Laser irradiation method, laser irradiation apparatus, and method of manufacturing a semiconductor device
    12.
    发明授权
    Laser irradiation method, laser irradiation apparatus, and method of manufacturing a semiconductor device 有权
    激光照射方法,激光照射装置以及半导体装置的制造方法

    公开(公告)号:US07927983B2

    公开(公告)日:2011-04-19

    申请号:US10896007

    申请日:2004-07-22

    IPC分类号: H01L21/20

    摘要: Attenuation regions of laser light are removed or reduced in size using a slit located in the immediate vicinity of a surface to be irradiated so that a steep energy distribution is obtained in the end portions of the laser light. The reason why the slit is located in the immediate vicinity of the surface to be irradiated is to suppress the spread of the laser light. In addition, the attenuation regions of the laser light are folded by using a mirror instead of the slit to increase energy densities in the attenuation regions by one another so that a steep energy density distribution is obtained in the end portions of the laser light.

    摘要翻译: 使用位于要照射的表面附近的狭缝,去除或减小激光的衰减区域,使得在激光的端部获得陡峭的能量分布。 狭缝位于待照射表面附近的原因是为了抑制激光的扩散。 此外,通过使用反射镜而不是狭缝折射激光的衰减区域,以使衰减区域中的能量密度相互增加,使得在激光的端部获得陡峭的能量密度分布。

    Laser treatment device, laser treatment method, and semiconductor device fabrication method
    13.
    发明授权
    Laser treatment device, laser treatment method, and semiconductor device fabrication method 有权
    激光治疗装置,激光治疗方法和半导体器件制造方法

    公开(公告)号:US07682949B2

    公开(公告)日:2010-03-23

    申请号:US11525956

    申请日:2006-09-25

    IPC分类号: H01L21/20

    摘要: A semiconductor film formed on a substrate is crystallized by continuously oscillating type laser. The scanning direction of the continuously oscillating type laser and the crystallization direction are coincident with each other. Adjustment of the crystallization direction and the charge transferring direction of the thin film transistors makes control of the characteristics of the thin film transistors possible. With respect to the laser treatment device for crystallizing the semiconductor film, the beam shape of laser oscillated from the continuously oscillating type laser device is made to be elliptical by a cylindrical lens and said cylindrical lens is made rotatable and said laser beam is scanned on said substrate by a galvanomirror and said laser beam can be focused upon said substrate by f-θlens.

    摘要翻译: 形成在基板上的半导体膜通过连续振荡型激光结晶。 连续振荡型激光的扫描方向与结晶方向一致。 调整薄膜晶体管的结晶方向和电荷转移方向使得可以控制薄膜晶体管的特性。 对于用于使半导体膜结晶的激光治疗装置,由连续摆动式激光装置振荡的激光束的波束形状通过柱面透镜被制成椭圆形,并且所述柱面透镜可旋转,并且所述激光束在所述 基板通过电镜镜和所述激光束可以通过f-和透镜而聚焦在所述基板上。

    Laser irradiation method, laser irradiation apparatus, and method of manufacturing a semiconductor device
    14.
    发明申请
    Laser irradiation method, laser irradiation apparatus, and method of manufacturing a semiconductor device 有权
    激光照射方法,激光照射装置以及半导体装置的制造方法

    公开(公告)号:US20050035104A1

    公开(公告)日:2005-02-17

    申请号:US10866802

    申请日:2004-06-15

    摘要: In the present invention, each laser light emitted from a plurality of lasers is divided, and laser light including at least one laser light that is emitted from a different laser and that has different energy distribution is synthesized with another such laser light, or laser light including at least one laser light that has different energy distribution is synthesized with another such laser light through a convex lens that is set at an angle to the direction each laser light travels, to form laser light having excellent uniformity in energy distribution.

    摘要翻译: 在本发明中,从多个激光器发射的各激光被分割,并且使用另一个这样的激光合成包括从不同激光器发射并且具有不同能量分布的至少一个激光的激光或激光 包括具有不同能量分布的至少一种激光通过与每个激光行进的方向成一定角度的凸透镜与另一激光合成,以形成具有优异的能量分布均匀性的激光。

    Method for manufacturing crystalline semiconductor device
    16.
    发明授权
    Method for manufacturing crystalline semiconductor device 有权
    制造晶体半导体器件的方法

    公开(公告)号:US07935584B2

    公开(公告)日:2011-05-03

    申请号:US11892939

    申请日:2007-08-28

    IPC分类号: H01L21/84

    摘要: There is provided a method for manufacturing a crystalline semiconductor film. An insulating film is formed over a substrate; an amorphous semiconductor film is formed over the insulating film; a cap film is formed over the amorphous semiconductor film; the amorphous semiconductor film is scanned and irradiated with a continuous wave laser beam or a laser beam with a repetition rate of greater than or equal to 10 MHz, through the cap film; and the amorphous semiconductor film is melted and crystallized At this time, an energy distribution in a length direction and a width direction in a laser beam spot is a Gaussian distribution, and the amorphous semiconductor film is scanned with the laser beam so as to be irradiated with the laser beam for a period of greater than or equal to 5 microseconds and less than or equal to 100 microseconds per region.

    摘要翻译: 提供一种制造结晶半导体膜的方法。 在基板上形成绝缘膜; 在绝缘膜上形成非晶半导体膜; 在非晶半导体膜上形成盖膜; 通过盖膜扫描并照射具有大于或等于10MHz的重复率的连续波激光束或激光束的非晶半导体膜; 并且非晶半导体膜熔化和结晶此时,激光束点中的长度方向和宽度方向上的能量分布是高斯分布,并且用激光束扫描非晶半导体膜以便被照射 激光束的周期大于或等于5微秒,并且每个区域小于或等于100微秒。

    Method for manufacturing crystalline semiconductor film and semiconductor device
    17.
    发明授权
    Method for manufacturing crystalline semiconductor film and semiconductor device 有权
    制造晶体半导体膜和半导体器件的方法

    公开(公告)号:US07662703B2

    公开(公告)日:2010-02-16

    申请号:US11892968

    申请日:2007-08-28

    IPC分类号: H01L21/20

    摘要: There is provided a method for manufacturing a crystalline semiconductor film. An insulating film is formed over a substrate; an amorphous semiconductor film is formed over the insulating film; a cap film is formed over the amorphous semiconductor film; the amorphous semiconductor film is scanned and irradiated with a continuous wave laser beam or a laser beam with a repetition rate of greater than or equal to 10 MHz, through the cap film; and the amorphous semiconductor film is melted and crystallized. At that time, an energy period in a length direction in a laser beam spot of the laser beam is 0.5 μm to 10 μm, preferably, 1 μm to 5 μm; an energy distribution in a width direction in a laser beam spot of the laser beam is a Gaussian distribution; and the amorphous semiconductor film is scanned with the laser beam so as to be irradiated with the laser beam for a period of greater than or equal to 5 microseconds and less than or equal to 100 microseconds per region.

    摘要翻译: 提供一种制造结晶半导体膜的方法。 在基板上形成绝缘膜; 在绝缘膜上形成非晶半导体膜; 在非晶半导体膜上形成盖膜; 通过盖膜扫描并照射具有大于或等于10MHz的重复率的连续波激光束或激光束的非晶半导体膜; 并使非晶半导体膜熔融并结晶。 此时,激光束的激光束点的长度方向的能量周期为0.5μm〜10μm,优选为1〜5μm, 激光束的激光束点的宽度方向的能量分布为高斯分布; 并且用激光束扫描非晶半导体膜,以便用激光束照射大于或等于5微秒且小于或等于每个区域100微秒的周期。

    Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
    18.
    发明申请
    Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device 有权
    光束均化器,激光照射装置以及半导体装置的制造方法

    公开(公告)号:US20080230723A1

    公开(公告)日:2008-09-25

    申请号:US12153720

    申请日:2008-05-23

    IPC分类号: G21K5/00 H01S3/10

    摘要: The present invention provides a beam homogenizer being able to form a rectangular beam spot having homogeneous energy distribution in a direction of its major axis without using the optical lens requiring to be manufactured with high accuracy. In addition, the present invention provides a laser irradiation apparatus being able to irradiate the laser beam having homogeneous energy distribution in a direction of its major axis. Furthermore, the present invention provides a method for manufacturing a semiconductor device being able to enhance crystallinity in the surface of the substrate and to manufacture TFT with a high operating characteristic.The beam homogenizer, one of the present invention, is to shape the beam spot on the surface to be irradiated into a rectangular spot having an aspect ratio of 10 or more, preferably 100 or more, and comprises an optical waveguide for homogenizing the energy distribution of the rectangular beam spot in the direction of its major axis.

    摘要翻译: 本发明提供一种光束均化器,其能够在不需要以高精度制造的光学透镜的情况下形成在其长轴方向上具有均匀能量分布的矩形束斑。 此外,本发明提供一种激光照射装置,其能够照射具有在其长轴方向上具有均匀能量分布的激光束。 此外,本发明提供了一种能够提高基板表面的结晶度并制造具有高工作特性的TFT的半导体器件的制造方法。 本发明之一的光束均化器是将待照射的表面上的束斑成形为纵横比为10以上,优选为100以上的矩形斑点,并且包括用于使能量分布均匀化的光波导 的矩形束斑在其长轴方向上。

    Method for manufacturing crystalline semiconductor film and semiconductor device
    19.
    发明申请
    Method for manufacturing crystalline semiconductor film and semiconductor device 有权
    制造晶体半导体膜和半导体器件的方法

    公开(公告)号:US20080171410A1

    公开(公告)日:2008-07-17

    申请号:US11892939

    申请日:2007-08-28

    IPC分类号: H01L21/84

    摘要: There is provided a method for manufacturing a crystalline semiconductor film. An insulating film is formed over a substrate; an amorphous semiconductor film is formed over the insulating film; a cap film is formed over the amorphous semiconductor film; the amorphous semiconductor film is scanned and irradiated with a continuous wave laser beam or a laser beam with a repetition rate of greater than or equal to 10 MHz, through the cap film; and the amorphous semiconductor film is melted and crystallized At this time, an energy distribution in a length direction and a width direction in a laser beam spot is a Gaussian distribution, and the amorphous semiconductor film is scanned with the laser beam so as to be irradiated with the laser beam for a period of greater than or equal to 5 microseconds and less than or equal to 100 microseconds per region.

    摘要翻译: 提供一种制造结晶半导体膜的方法。 在基板上形成绝缘膜; 在绝缘膜上形成非晶半导体膜; 在非晶半导体膜上形成盖膜; 通过盖膜扫描并照射具有大于或等于10MHz的重复率的连续波激光束或激光束的非晶半导体膜; 并且非晶半导体膜熔化和结晶此时,激光束点中的长度方向和宽度方向上的能量分布是高斯分布,并且用激光束扫描非晶半导体膜以便被照射 激光束的周期大于或等于5微秒,并且每个区域小于或等于100微秒。

    Laser treatment device, laser treatment method, and semiconductor device fabrication method
    20.
    发明授权
    Laser treatment device, laser treatment method, and semiconductor device fabrication method 有权
    激光治疗装置,激光治疗方法和半导体器件制造方法

    公开(公告)号:US07112517B2

    公开(公告)日:2006-09-26

    申请号:US10237173

    申请日:2002-09-09

    IPC分类号: H01I21/36 H01I21/00

    摘要: Object of the InventionTo obtain thin film transistors with controlled characteristics on a substrate.MeansA semiconductor film formed on a substrate is crystallized by continuously oscillating type laser. The scanning direction of the continuously oscillating type laser and the crystallization direction are coincident with each other. Adjustment of the crystallization direction and the charge transferring direction of the thin film transistors makes control of the characteristics of the thin film transistors possible. With respect to the laser treatment device for crystallizing the semiconductor film, the beam shape of laser oscillated from the continuously oscillating type laser device is made to be elliptical by a cylindrical lens and said cylindrical lens is made rotatable and said laser beam is scanned on said substrate by a galvanomirror and said laser beam can be focused upon said substrate by f-θ lens.

    摘要翻译: 本发明的目的是获得在基板上具有受控特性的薄膜晶体管。 装置通过连续振荡式激光使基板上形成的半导体膜结晶化。 连续振荡型激光的扫描方向与结晶方向一致。 调整薄膜晶体管的结晶方向和电荷转移方向使得可以控制薄膜晶体管的特性。 对于用于使半导体膜结晶的激光治疗装置,由连续摆动式激光装置振荡的激光束的波束形状通过柱面透镜制成椭圆形,所述柱面透镜可旋转,并且所述激光束在所述 衬底由电镜镜和所述激光束可以通过f-theta透镜聚焦在所述衬底上。