摘要:
There is provided a method for manufacturing a crystalline semiconductor film. An insulating film is formed over a substrate; an amorphous semiconductor film is formed over the insulating film; a cap film is formed over the amorphous semiconductor film; the amorphous semiconductor film is scanned and irradiated with a continuous wave laser beam or a laser beam with a repetition rate of greater than or equal to 10 MHz, through the cap film; and the amorphous semiconductor film is melted and crystallized At this time, an energy distribution in a length direction and a width direction in a laser beam spot is a Gaussian distribution, and the amorphous semiconductor film is scanned with the laser beam so as to be irradiated with the laser beam for a period of greater than or equal to 5 microseconds and less than or equal to 100 microseconds per region.
摘要:
Attenuation regions of laser light are removed or reduced in size using a slit located in the immediate vicinity of a surface to be irradiated so that a steep energy distribution is obtained in the end portions of the laser light. The reason why the slit is located in the immediate vicinity of the surface to be irradiated is to suppress the spread of the laser light. In addition, the attenuation regions of the laser light are folded by using a mirror instead of the slit to increase energy densities in the attenuation regions by one another so that a steep energy density distribution is obtained in the end portions of the laser light.
摘要:
A semiconductor film formed on a substrate is crystallized by continuously oscillating type laser. The scanning direction of the continuously oscillating type laser and the crystallization direction are coincident with each other. Adjustment of the crystallization direction and the charge transferring direction of the thin film transistors makes control of the characteristics of the thin film transistors possible. With respect to the laser treatment device for crystallizing the semiconductor film, the beam shape of laser oscillated from the continuously oscillating type laser device is made to be elliptical by a cylindrical lens and said cylindrical lens is made rotatable and said laser beam is scanned on said substrate by a galvanomirror and said laser beam can be focused upon said substrate by f-θlens.
摘要:
In the present invention, each laser light emitted from a plurality of lasers is divided, and laser light including at least one laser light that is emitted from a different laser and that has different energy distribution is synthesized with another such laser light, or laser light including at least one laser light that has different energy distribution is synthesized with another such laser light through a convex lens that is set at an angle to the direction each laser light travels, to form laser light having excellent uniformity in energy distribution.
摘要:
If an optical path length of an optical system is reduced and a length of a laser light on an irradiation surface is increased, there occurs curvature of field which is a phenomenon that a convergent position deviates depending on an incident angle or incident position of a laser light with respect to a lens. To avoid this phenomenon, an optical element having a negative power such as a concave lens or a concave cylindrical lens is inserted to regulate the optical path length of the laser light and a convergent position is made coincident with a irradiation surface to form an image on the irradiation surface.
摘要:
There is provided a method for manufacturing a crystalline semiconductor film. An insulating film is formed over a substrate; an amorphous semiconductor film is formed over the insulating film; a cap film is formed over the amorphous semiconductor film; the amorphous semiconductor film is scanned and irradiated with a continuous wave laser beam or a laser beam with a repetition rate of greater than or equal to 10 MHz, through the cap film; and the amorphous semiconductor film is melted and crystallized At this time, an energy distribution in a length direction and a width direction in a laser beam spot is a Gaussian distribution, and the amorphous semiconductor film is scanned with the laser beam so as to be irradiated with the laser beam for a period of greater than or equal to 5 microseconds and less than or equal to 100 microseconds per region.
摘要:
There is provided a method for manufacturing a crystalline semiconductor film. An insulating film is formed over a substrate; an amorphous semiconductor film is formed over the insulating film; a cap film is formed over the amorphous semiconductor film; the amorphous semiconductor film is scanned and irradiated with a continuous wave laser beam or a laser beam with a repetition rate of greater than or equal to 10 MHz, through the cap film; and the amorphous semiconductor film is melted and crystallized. At that time, an energy period in a length direction in a laser beam spot of the laser beam is 0.5 μm to 10 μm, preferably, 1 μm to 5 μm; an energy distribution in a width direction in a laser beam spot of the laser beam is a Gaussian distribution; and the amorphous semiconductor film is scanned with the laser beam so as to be irradiated with the laser beam for a period of greater than or equal to 5 microseconds and less than or equal to 100 microseconds per region.
摘要:
The present invention provides a beam homogenizer being able to form a rectangular beam spot having homogeneous energy distribution in a direction of its major axis without using the optical lens requiring to be manufactured with high accuracy. In addition, the present invention provides a laser irradiation apparatus being able to irradiate the laser beam having homogeneous energy distribution in a direction of its major axis. Furthermore, the present invention provides a method for manufacturing a semiconductor device being able to enhance crystallinity in the surface of the substrate and to manufacture TFT with a high operating characteristic.The beam homogenizer, one of the present invention, is to shape the beam spot on the surface to be irradiated into a rectangular spot having an aspect ratio of 10 or more, preferably 100 or more, and comprises an optical waveguide for homogenizing the energy distribution of the rectangular beam spot in the direction of its major axis.
摘要:
There is provided a method for manufacturing a crystalline semiconductor film. An insulating film is formed over a substrate; an amorphous semiconductor film is formed over the insulating film; a cap film is formed over the amorphous semiconductor film; the amorphous semiconductor film is scanned and irradiated with a continuous wave laser beam or a laser beam with a repetition rate of greater than or equal to 10 MHz, through the cap film; and the amorphous semiconductor film is melted and crystallized At this time, an energy distribution in a length direction and a width direction in a laser beam spot is a Gaussian distribution, and the amorphous semiconductor film is scanned with the laser beam so as to be irradiated with the laser beam for a period of greater than or equal to 5 microseconds and less than or equal to 100 microseconds per region.
摘要:
Object of the InventionTo obtain thin film transistors with controlled characteristics on a substrate.MeansA semiconductor film formed on a substrate is crystallized by continuously oscillating type laser. The scanning direction of the continuously oscillating type laser and the crystallization direction are coincident with each other. Adjustment of the crystallization direction and the charge transferring direction of the thin film transistors makes control of the characteristics of the thin film transistors possible. With respect to the laser treatment device for crystallizing the semiconductor film, the beam shape of laser oscillated from the continuously oscillating type laser device is made to be elliptical by a cylindrical lens and said cylindrical lens is made rotatable and said laser beam is scanned on said substrate by a galvanomirror and said laser beam can be focused upon said substrate by f-θ lens.