摘要:
A snowmobile comprises a seat having a soft cushion layer, a more firm boundary layer, and a rigid support structure. Passages are provided between the soft cushion layer and a chamber such that air can be exchanged from within the seat and the chamber depending upon whether the operator is seated on the seat or standing above the seat. When an operator sits on the seat, air is forced out of the seat cushion material and into the chamber. When the operator stands and the seat cushion rebounds, air is provided to the seat from the chamber. The snowmobile also includes a lit trunk. The trunk is lit by a light bulb used for a rear tail light assembly. The light bulb is secured in a mounting plate that is formed of a translucent material that provides a window into the trunk. The light bulb can have an integrally formed socket, which can be translucent as well, to increase the amount of light transmitted into the trunk. The trunk preferably is not the chamber that communicates with the seat.
摘要:
A lens array sheet has a glass base and a resin lens array layer formed on the glass base, wherein the resin lens array layer includes a plurality of resin lenses and preferably includes a composite material having nanoparticles added to a matrix of the resin and the plurality of resin lenses are formed on the glass base substantially independently from each other.
摘要:
There is provided a gap fill material forming composition for lithography that is used in dual damascene process and is excellent in flattening property and fill property. Concretely, it is a gap fill material forming composition characterized in that the composition is used in manufacture of semiconductor device by a method comprising coating a photoresist on a semiconductor substrate having a hole with aspect ratio shown in height/diameter of 1 or more, and transferring an image to the semiconductor substrate by use of lithography process, and that comprises a polymer, a crosslinking agent and a solvent.
摘要:
There is provided a laser machining apparatus that excels in precision in terms of machining position and shape. The laser machining apparatus is provided with an optical axis adjusting unit disposed on a basal optical axis of a laser beam outputted from a laser oscillator so as to adjust the laser beam outputted from the laser oscillator onto a workpiece. The laser machining apparatus is provided further with mirrors, disposed between the laser oscillator and the optical axis adjusting unit, for freely deflecting the optical axis of the laser beam; and optical axis position detecting means, disposed between the optical axis adjusting unit and the optical axis deflecting means, for detecting the position of the optical axis of the laser beam. The apparatus aligns the optical axis of the laser beam incident on the optical axis adjusting unit with the basal optical axis by means of the mirrors based on a result detected by the optical axis position detecting means.
摘要:
A polyimide precursor having a repeating unit represented by the following general formula (1), wherein R1 contains a bivalent organic group constituting a diamine having a hexafluoropropylidene group in its molecule represented by the following general formula (2), and the reduced viscosity is from 0.05 to 5.0 dl/g (in N-methylpyrrolidone at a temperature of 30° C., concentration: 0.5 g/dl), and a polyimide obtained by imidizing said precursor: (wherein R1 is a bivalent organic group constituting a diamine, A is a hydrogen atom, a linear alkyl group including a methyl group, or a trifluoromethyl group, and n is the number of a substituent on an aromatic ring and an integer of from 1 to 4).
摘要:
A laser machining apparatus that excels in precision in terms of machining position and shape is provided with an optical axis adjusting unit disposed on a basal optical axis of a laser beam outputted from a laser oscillator so as to adjust the laser beam outputted from the laser oscillator onto a workpiece. The laser machining apparatus is provided further with mirrors, disposed between the laser oscillator and the optical axis adjusting unit, for freely deflecting the optical axis of the laser beam. The laser machining apparatus also includes an optical axis position detecting means, disposed between the optical axis adjusting unit and the optical axis deflecting means, for detecting the position of the optical axis of the laser beam. The apparatus aligns the optical axis of the laser beam incident on the optical axis adjusting unit with the basal optical axis by means of the mirrors based on a result detected by the optical axis position detecting means.
摘要:
The principal surface of a substrate made of a group III-V compound semiconductor material is about a (100) plane. A light emitting lamination structure is disposed on the principal surface. In the light emitting lamination structure, a quantum well layer is sandwiched by a pair of carrier confinement layers made of a semiconductor material having a band gap wider than a semiconductor material of the quantum well layer. The pair of carrier confinement layers are sandwiched by a pair of clad layers made of a semiconductor material having a band gap wider than the band gap of the semiconductor material of the carrier confinement layers. Thicknesses of the quantum well layer and the carrier confinement layers, as well as compositions of the semiconductor materials thereof, are set such that light emission recombination of electrons and holes occurs in the quantum well layer and not in the carrier confinement layers.
摘要:
The principal surface of a substrate made of group III-V compound semiconductor is about (100) plane. A light emitting lamination structure is disposed on the principal surface. The light emitting lamination structure includes a quantum well layer made of group III-V mixed crystal semiconductor containing In, a pair of carrier confinement layers made of semiconductor material having a band gap wider than the quantum well layer and sandwiching the quantum well layer, and a pair of clad layers made of semiconductor material having a band gap wider than the carrier confinement layers and sandwiching the quantum well layer and the carrier confinement layers. A difference of 100 meV or larger exists between an energy level of the carrier confinement layers at a conduction band lower end and a ground level of an electron in the quantum well layer.
摘要:
A lens array sheet has a glass base and a resin lens array layer formed on the glass base, wherein the resin lens array layer includes a plurality of resin lenses and preferably includes a composite material having nanoparticles added to a matrix of the resin and the plurality of resin lenses are formed on the glass base substantially independently from each other.
摘要:
The principal surface of a substrate made of a group III-V compound semiconductor material is about a (100) plane. A light emitting lamination structure is disposed on the principal surface. In the light emitting lamination structure, a quantum well layer is sandwiched by a pair of carrier confinement layers made of a semiconductor material having a band gap wider than a semiconductor material of the quantum well layer. The pair of carrier confinement layers are sandwiched by a pair of clad layers made of a semiconductor material having a band gap wider than the band gap of the semiconductor material of the carrier confinement layers. Thicknesses of the quantum well layer and the carrier confinement layers, as well as compositions of the semiconductor materials thereof, are set such that light emission recombination of electrons and holes occurs in the quantum well layer and not in the carrier confinement layers.