Lighted storage compartment for snowmobile
    11.
    发明授权
    Lighted storage compartment for snowmobile 失效
    照明的雪车储存室

    公开(公告)号:US06371233B2

    公开(公告)日:2002-04-16

    申请号:US09746214

    申请日:2000-12-22

    申请人: Kazuhisa Ishii

    发明人: Kazuhisa Ishii

    IPC分类号: B62M2702

    CPC分类号: B62K19/46 B60Q3/30 B62M27/02

    摘要: A snowmobile comprises a seat having a soft cushion layer, a more firm boundary layer, and a rigid support structure. Passages are provided between the soft cushion layer and a chamber such that air can be exchanged from within the seat and the chamber depending upon whether the operator is seated on the seat or standing above the seat. When an operator sits on the seat, air is forced out of the seat cushion material and into the chamber. When the operator stands and the seat cushion rebounds, air is provided to the seat from the chamber. The snowmobile also includes a lit trunk. The trunk is lit by a light bulb used for a rear tail light assembly. The light bulb is secured in a mounting plate that is formed of a translucent material that provides a window into the trunk. The light bulb can have an integrally formed socket, which can be translucent as well, to increase the amount of light transmitted into the trunk. The trunk preferably is not the chamber that communicates with the seat.

    摘要翻译: 雪地车包括具有软垫层,更坚固的边界层和刚性支撑结构的座椅。 在软垫层和室之间提供通道,使得空气可以根据操作者是坐在座椅上还是站在座椅上方而从座椅和室内更换。 当操作者坐在座椅上时,空气被迫离开座垫材料并进入腔室。 当操作员站立并且座垫反弹时,从腔室向座椅提供空气。 雪地摩托车还包括一个点燃的树干。 后备灯组件的灯泡用于灯管的后备灯。 灯泡固定在由半透明材料形成的安装板中,该半透明材料将窗口提供到树干中。 灯泡可以具有一体形成的插座,其也可以是半透明的,以增加传输到树干中的光量。 树干优选地不是与座椅连通的室。

    Acrylic polymer-containing gap filler forming composition for lithography
    13.
    发明申请
    Acrylic polymer-containing gap filler forming composition for lithography 有权
    用于光刻的含丙烯酸聚合物的间隙填料形成组合物

    公开(公告)号:US20060068526A1

    公开(公告)日:2006-03-30

    申请号:US10544129

    申请日:2004-02-20

    IPC分类号: H01L21/48 C08K5/06

    摘要: There is provided a gap fill material forming composition for lithography that is used in dual damascene process and is excellent in flattening property and fill property. Concretely, it is a gap fill material forming composition characterized in that the composition is used in manufacture of semiconductor device by a method comprising coating a photoresist on a semiconductor substrate having a hole with aspect ratio shown in height/diameter of 1 or more, and transferring an image to the semiconductor substrate by use of lithography process, and that comprises a polymer, a crosslinking agent and a solvent.

    摘要翻译: 提供了一种用于光刻的间隙填充材料形成组合物,其用于双镶嵌工艺,并且具有优异的压平性能和填充性能。 具体地说,它是一种间隙填充材料形成组合物,其特征在于该组合物用于制造半导体器件,方法包括在具有高度/直径为1或更大的高宽比的孔的半导体衬底上涂覆光致抗蚀剂,以及 通过使用光刻工艺将图像转印到半导体衬底,并且包括聚合物,交联剂和溶剂。

    Laser machining apparatus
    14.
    发明申请
    Laser machining apparatus 有权
    激光加工设备

    公开(公告)号:US20050161445A1

    公开(公告)日:2005-07-28

    申请号:US11037222

    申请日:2005-01-19

    CPC分类号: B23K26/043

    摘要: There is provided a laser machining apparatus that excels in precision in terms of machining position and shape. The laser machining apparatus is provided with an optical axis adjusting unit disposed on a basal optical axis of a laser beam outputted from a laser oscillator so as to adjust the laser beam outputted from the laser oscillator onto a workpiece. The laser machining apparatus is provided further with mirrors, disposed between the laser oscillator and the optical axis adjusting unit, for freely deflecting the optical axis of the laser beam; and optical axis position detecting means, disposed between the optical axis adjusting unit and the optical axis deflecting means, for detecting the position of the optical axis of the laser beam. The apparatus aligns the optical axis of the laser beam incident on the optical axis adjusting unit with the basal optical axis by means of the mirrors based on a result detected by the optical axis position detecting means.

    摘要翻译: 提供了一种在加工位置和形状方面精度优异的激光加工装置。 激光加工装置设置有光轴调节单元,其设置在从激光振荡器输出的激光束的基础光轴上,以将从激光振荡器输出的激光束调整到工件上。 激光加工装置还设置有设置在激光振荡器和光轴调节单元之间的反射镜,用于自由地偏转激光束的光轴; 以及光轴位置检测装置,设置在光轴调整单元和光轴偏转装置之间,用于检测激光束的光轴的位置。 该装置基于由光轴位置检测装置检测到的结果,通过反射镜将入射在光轴调节单元上的激光束的光轴与基准光轴对准。

    Polyimide precursors and polyimides
    15.
    发明授权
    Polyimide precursors and polyimides 有权
    聚酰亚胺前体和聚酰亚胺

    公开(公告)号:US06489431B1

    公开(公告)日:2002-12-03

    申请号:US09806487

    申请日:2001-04-12

    IPC分类号: C08G7310

    CPC分类号: C08G73/1039 C08G73/10

    摘要: A polyimide precursor having a repeating unit represented by the following general formula (1), wherein R1 contains a bivalent organic group constituting a diamine having a hexafluoropropylidene group in its molecule represented by the following general formula (2), and the reduced viscosity is from 0.05 to 5.0 dl/g (in N-methylpyrrolidone at a temperature of 30° C., concentration: 0.5 g/dl), and a polyimide obtained by imidizing said precursor: (wherein R1 is a bivalent organic group constituting a diamine, A is a hydrogen atom, a linear alkyl group including a methyl group, or a trifluoromethyl group, and n is the number of a substituent on an aromatic ring and an integer of from 1 to 4).

    摘要翻译: 具有由以下通式(1)表示的重复单元的聚酰亚胺前体,其中R1分子由以下通式(2)表示的分子中包含构成具有六氟亚丙基的二胺的二价有机基团,并且比浓粘度来自 0.05〜5.0dl / g(在N-甲基吡咯烷酮中,温度30℃,浓度:0.5g / dl)和通过酰亚胺化所述前体获得的聚酰亚胺(其中R1是构成二胺的二价有机基团,A 是氢原子,包括甲基或三氟甲基的直链烷基,n是芳环上的取代基数和1至4的整数)。

    Laser machining apparatus
    16.
    发明授权
    Laser machining apparatus 有权
    激光加工设备

    公开(公告)号:US07473867B2

    公开(公告)日:2009-01-06

    申请号:US11037222

    申请日:2005-01-19

    IPC分类号: B23K26/02 B23K26/08

    CPC分类号: B23K26/043

    摘要: A laser machining apparatus that excels in precision in terms of machining position and shape is provided with an optical axis adjusting unit disposed on a basal optical axis of a laser beam outputted from a laser oscillator so as to adjust the laser beam outputted from the laser oscillator onto a workpiece. The laser machining apparatus is provided further with mirrors, disposed between the laser oscillator and the optical axis adjusting unit, for freely deflecting the optical axis of the laser beam. The laser machining apparatus also includes an optical axis position detecting means, disposed between the optical axis adjusting unit and the optical axis deflecting means, for detecting the position of the optical axis of the laser beam. The apparatus aligns the optical axis of the laser beam incident on the optical axis adjusting unit with the basal optical axis by means of the mirrors based on a result detected by the optical axis position detecting means.

    摘要翻译: 在加工位置和形状方面精度优异的激光加工装置设置有设置在从激光振荡器输出的激光束的基础光轴上的光轴调节单元,以便调节从激光振荡器输出的激光束 到工件上。 激光加工装置还设置有设置在激光振荡器和光轴调节单元之间的反射镜,用于自由地偏转激光束的光轴。 激光加工装置还包括光轴位置检测装置,设置在光轴调整单元和光轴偏转装置之间,用于检测激光束的光轴的位置。 该装置基于由光轴位置检测装置检测到的结果,通过反射镜将入射在光轴调节单元上的激光束的光轴与基准光轴对准。

    Semiconductor light emitting device having quantum well layer sandwiched between carrier confinement layers
    17.
    发明申请
    Semiconductor light emitting device having quantum well layer sandwiched between carrier confinement layers 失效
    半导体发光器件具有夹在载流子限制层之间的量子阱层

    公开(公告)号:US20050145857A1

    公开(公告)日:2005-07-07

    申请号:US11067190

    申请日:2005-02-24

    CPC分类号: B82Y20/00 H01L33/06 H01L33/30

    摘要: The principal surface of a substrate made of a group III-V compound semiconductor material is about a (100) plane. A light emitting lamination structure is disposed on the principal surface. In the light emitting lamination structure, a quantum well layer is sandwiched by a pair of carrier confinement layers made of a semiconductor material having a band gap wider than a semiconductor material of the quantum well layer. The pair of carrier confinement layers are sandwiched by a pair of clad layers made of a semiconductor material having a band gap wider than the band gap of the semiconductor material of the carrier confinement layers. Thicknesses of the quantum well layer and the carrier confinement layers, as well as compositions of the semiconductor materials thereof, are set such that light emission recombination of electrons and holes occurs in the quantum well layer and not in the carrier confinement layers.

    摘要翻译: 由III-V族化合物半导体材料制成的衬底的主表面为(100)面。 发光层叠结构设置在主表面上。 在发光层叠结构中,量子阱层被由具有比量子阱层的半导体材料宽的带隙的半导体材料制成的一对载流子限制层夹在中间。 一对载流子限制层被由具有比载流子限制层的半导体材料的带隙宽的带隙的半导体材料制成的一对覆盖层夹在中间。 量子阱层和载流子限制层的厚度以及其半导体材料的组成被设定为使得电子和空穴的发光复合发生在量子阱层而不是在载流子限制层中。

    Semiconductor light emitting device having quantum well layer sandwiched between carrier confinement layers
    18.
    发明授权
    Semiconductor light emitting device having quantum well layer sandwiched between carrier confinement layers 有权
    半导体发光器件具有夹在载流子限制层之间的量子阱层

    公开(公告)号:US06900467B2

    公开(公告)日:2005-05-31

    申请号:US10664659

    申请日:2003-09-17

    IPC分类号: H01L33/06 H01L33/30 H01L33/00

    CPC分类号: H01L33/30 B82Y20/00 H01L33/06

    摘要: The principal surface of a substrate made of group III-V compound semiconductor is about (100) plane. A light emitting lamination structure is disposed on the principal surface. The light emitting lamination structure includes a quantum well layer made of group III-V mixed crystal semiconductor containing In, a pair of carrier confinement layers made of semiconductor material having a band gap wider than the quantum well layer and sandwiching the quantum well layer, and a pair of clad layers made of semiconductor material having a band gap wider than the carrier confinement layers and sandwiching the quantum well layer and the carrier confinement layers. A difference of 100 meV or larger exists between an energy level of the carrier confinement layers at a conduction band lower end and a ground level of an electron in the quantum well layer.

    摘要翻译: 由III-V族化合物半导体制成的基片的主表面为(100)面。 发光层叠结构设置在主表面上。 发光层压结构包括由含有In的III-V族混合晶体半导体制成的量子阱层,由具有宽于量子阱层的带隙并夹持量子阱层的半导体材料制成的一对载流子限制层,以及 一对由半导体材料制成的覆盖层,其具有比载流子限制层宽的带隙,并夹持量子阱层和载流子限制层。 在导带下端的载流子限制层的能级和量子阱层中的电子的地平面之间存在100meV或更大的差异。

    LENS ARRAY SHEET
    19.
    发明申请
    LENS ARRAY SHEET 有权
    镜头阵列

    公开(公告)号:US20140043681A1

    公开(公告)日:2014-02-13

    申请号:US14112010

    申请日:2012-04-04

    IPC分类号: G02B27/22 G02B3/00

    摘要: A lens array sheet has a glass base and a resin lens array layer formed on the glass base, wherein the resin lens array layer includes a plurality of resin lenses and preferably includes a composite material having nanoparticles added to a matrix of the resin and the plurality of resin lenses are formed on the glass base substantially independently from each other.

    摘要翻译: 透镜阵列片具有在玻璃基底上形成的玻璃基体和树脂透镜阵列层,其中树脂透镜阵列层包括多个树脂透镜,并且优选地包括具有添加到树脂的基体中的纳米颗粒的复合材料,并且多个 的树脂透镜基本上彼此独立地形成在玻璃基底上。

    Semiconductor light emitting device having quantum well layer sandwiched between carrier confinement layers
    20.
    发明授权
    Semiconductor light emitting device having quantum well layer sandwiched between carrier confinement layers 失效
    半导体发光器件具有夹在载流子限制层之间的量子阱层

    公开(公告)号:US07084422B2

    公开(公告)日:2006-08-01

    申请号:US11067190

    申请日:2005-02-24

    IPC分类号: H01L29/006

    CPC分类号: B82Y20/00 H01L33/06 H01L33/30

    摘要: The principal surface of a substrate made of a group III-V compound semiconductor material is about a (100) plane. A light emitting lamination structure is disposed on the principal surface. In the light emitting lamination structure, a quantum well layer is sandwiched by a pair of carrier confinement layers made of a semiconductor material having a band gap wider than a semiconductor material of the quantum well layer. The pair of carrier confinement layers are sandwiched by a pair of clad layers made of a semiconductor material having a band gap wider than the band gap of the semiconductor material of the carrier confinement layers. Thicknesses of the quantum well layer and the carrier confinement layers, as well as compositions of the semiconductor materials thereof, are set such that light emission recombination of electrons and holes occurs in the quantum well layer and not in the carrier confinement layers.

    摘要翻译: 由III-V族化合物半导体材料制成的衬底的主表面为(100)面。 发光层叠结构设置在主表面上。 在发光层叠结构中,量子阱层被由具有比量子阱层的半导体材料宽的带隙的半导体材料制成的一对载流子限制层夹在中间。 一对载流子限制层被由具有比载流子限制层的半导体材料的带隙宽的带隙的半导体材料制成的一对覆盖层夹在中间。 量子阱层和载流子限制层的厚度以及其半导体材料的组成被设定为使得电子和空穴的发光复合发生在量子阱层而不是在载流子限制层中。