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    Aqueous cleaning solution for removing contaminants surface of circuit substrate cleaning method using the same
    11.
    发明授权
    Aqueous cleaning solution for removing contaminants surface of circuit substrate cleaning method using the same 失效
    用于清除污染物表面的水性清洁溶液使用其清洗方法

    公开(公告)号：US06399552B1

    公开(公告)日：2002-06-04

    申请号：US09451844

    申请日：1999-12-01

    申请人： Kwang-wook Lee ,  Kun-tack Lee ,  Yong-sun Ko ,  Chang-lyong Song

    发明人： Kwang-wook Lee ,  Kun-tack Lee ,  Yong-sun Ko ,  Chang-lyong Song

    IPC分类号： C11D708

    CPC分类号： C11D11/0047 ,  C11D7/06 ,  C11D7/08 ,  C11D7/10 ,  C11D7/265

    摘要： A cleaning solution for removing contaminants from the surface of an integrated circuit substrate includes a fluoride reducing agent, an organic acid containing a carboxyl group, an alkaline pH controller and water. The pH of the cleaning solution is 3.5-8.8. The cleaning solution is used at a low temperature, such as room temperature, which is lower than that for conventional cleaning solutions. Therefore, the cleaning solution does not evaporate. Furthermore, a cleaning method using the cleaning solution does not require a pre-ashing step to reinforce the cleaning agent, nor is an alcohol rinse step required. The cleaning solution is removed by rinsing with deionized water. Therefore, the cleaning method using the cleaning solution is quicker and less costly than conventional cleaning methods.

    摘要翻译： 用于从集成电路基板的表面除去污染物的清洗液包括氟化物还原剂，含有羧基的有机酸，碱性pH控制剂和水。 清洗液的pH值为3.5-8.8。 清洁溶液在比常规清洁溶液低的低温（例如室温）下使用。 因此，清洗液不会蒸发。 此外，使用清洁溶液的清洁方法不需要预灰化步骤来加强清洁剂，也不需要醇漂洗步骤。 通过用去离子水冲洗除去清洁溶液。 因此，使用清洁溶液的清洁方法比常规清洁方法更快，成本更低。

    Method of removing oxide layer and semiconductor manufacturing apparatus for removing oxide layer
    12.
    发明授权
    Method of removing oxide layer and semiconductor manufacturing apparatus for removing oxide layer 有权
    去除氧化物层的方法和用于去除氧化物层的半导体制造装置

    公开(公告)号：US07488688B2

    公开(公告)日：2009-02-10

    申请号：US10997902

    申请日：2004-11-29

    申请人： Seung-pil Chung ,  Kyu-whan Chang ,  Sun-jung Lee ,  Kun-tack Lee ,  Im-soo Park ,  Kwang-wook Lee ,  Moon-hee Lee

    发明人： Seung-pil Chung ,  Kyu-whan Chang ,  Sun-jung Lee ,  Kun-tack Lee ,  Im-soo Park ,  Kwang-wook Lee ,  Moon-hee Lee

    IPC分类号： H01L21/302

    CPC分类号： H01L21/02057 ,  H01L21/31116

    摘要： A method for removing an oxide layer such as a natural oxide layer and a semiconductor manufacturing apparatus which uses the method to remove the oxide layer. A vertically movable susceptor is installed at the lower portion in a processing chamber and a silicon wafer is loaded onto the susceptor when it is at the lower portion of the processing chamber. The air is exhausted from the processing chamber to form a vacuum condition therein. A hydrogen gas in a plasma state and a fluorine-containing gas are supplied into the processing chamber to induce a chemical reaction with the oxide layer on the silicon wafer, resulting in a reaction layer. Then, the susceptor is moved up to the upper portion of the processing chamber, to anneal the silicon wafer on the susceptor with a heater installed at the upper portion of the processing chamber, thus vaporizing the reaction layer. The vaporized reaction layer is exhausted out of the chamber. The oxide layer can be removed with a high selectivity while avoiding damage or contamination of the underlying layer.

    摘要翻译： 用于除去氧化物层的方法，例如天然氧化物层和使用该方法去除氧化物层的半导体制造装置。 垂直移动的基座安装在处理室的下部处，并且当硅晶片位于处理室的下部时，将硅晶片装载到基座上。 空气从处理室排出，在其中形成真空条件。 将等离子体状态的氢气和含氟气体供给到处理室，以引起与硅晶片上的氧化物层的化学反应，产生反应层。 然后，将基座向上移动到处理室的上部，通过安装在处理室上部的加热器对基座上的硅晶片退火，从而使反应层蒸发。 蒸发的反应层被排出室外。 可以以高选择性去除氧化物层，同时避免下层的损坏或污染。

    METHODS OF FORMING ELECTRONIC DEVICES INCLUDING ELECTRODES WITH INSULATING SPACERS THEREON
    13.
    发明申请
    METHODS OF FORMING ELECTRONIC DEVICES INCLUDING ELECTRODES WITH INSULATING SPACERS THEREON 失效
    形成包含绝缘间隔电极的电子器件的方法

    公开(公告)号：US20080096347A1

    公开(公告)日：2008-04-24

    申请号：US11956360

    申请日：2007-12-14

    申请人： In-joon Yeo ,  Tae-hyuk Ahn ,  Kwang-wook Lee ,  Jung-woo Seo ,  Jeong-sic Jeon

    发明人： In-joon Yeo ,  Tae-hyuk Ahn ,  Kwang-wook Lee ,  Jung-woo Seo ,  Jeong-sic Jeon

    IPC分类号： H01L21/8242

    CPC分类号： H01L28/90 ,  H01L27/10817 ,  H01L27/10852 ,  H01L28/91

    摘要： An electronic device may include a substrate, a conductive layer on the substrate, and an insulating spacer. The conductive electrode may have an electrode wall extending away from the substrate. The insulating spacer may be provided on the electrode wall with portions of the electrode wall being free of the insulating spacer between the substrate and the insulating spacer, and portions of the electrode most distant from the substrate may be free of the insulating spacer. Related methods and structures are also discussed.

    摘要翻译： 电子器件可以包括衬底，衬底上的导电层和绝缘间隔物。 导电电极可以具有远离衬底延伸的电极壁。 绝缘间隔物可以设置在电极壁上，电极壁的部分在衬底和绝缘间隔物之间​​没有绝缘间隔物，并且电极最远离衬底的部分可以没有绝缘间隔物。 还讨论了相关的方法和结构。