Abstract:
Disclosed is a liquid crystal display (LCD) device capable of enhancing an aperture ratio and a transmittance ratio. The LCD device includes a first substrate and a second substrate; a plurality of gate lines formed on the first substrate, each gate line having a first region and a second region with the width less than that of the first region; a plurality of data lines disposed so as to be perpendicular to the gate lines to define a plurality of pixel regions; a thin film transistor (TFT) formed on the first region of the gate line; a common electrode and a pixel electrode formed on the first substrate, and forming an electric field; a black matrix and a color filter layer formed on the second substrate; and a liquid crystal (LC) layer formed between the first substrate and the second substrate, wherein the first regions and the second regions of the gate lines are alternately disposed in an extending direction of the gate lines and in an extending direction of the data lines, and wherein two TFTs are formed on the first region of the gate line corresponding to the pixel region, two TFTS being respectively connected to pixel electrodes of two pixel regions adjacent to each other based on the gate line
Abstract:
A display device comprises a substrate including a plurality of pixel areas that are spaced apart from each other and a plurality of transmissive areas between the plurality of pixel areas, wherein each of the plurality of pixel areas includes a plurality of sub pixels; and a plurality of signal lines that extend in a first direction on the substrate, wherein the plurality of sub pixels include a plurality of pixel circuits, wherein the plurality of signal lines overlap the plurality of pixel circuits without the plurality of signal lines overlapping the plurality of transmissive areas. Accordingly, the plurality of pixel areas and the plurality of signal lines are in the same area to reduce the size of the opaque area in the entire display device and enlarge a size of the transmissive area to implement a transparent display device.
Abstract:
A light emitting display device includes a substrate, a pixel area having an emission area and a non-emission area on the substrate, a light emitting diode disposed in the pixel area, and a pixel driving circuit electrically connected with the light emitting diode and having a driving thin film transistor disposed in the emission area, wherein light emitted from the light emitting diode can be emitted to the outside of the substrate by passing through the substrate.
Abstract:
According to an aspect of the present disclosure, a display device includes a substrate on which a pixel including a plurality of sub pixels is disposed; a bonding layer on the substrate; a plurality of light-emitting elements in a first subset of the plurality of sub pixels and disposed on the bonding layer; a planarization layer on the bonding layer and the plurality of light-emitting elements; and an additional light-emitting element in a second subset of the plurality of sub pixels and disposed on the planarization layer.
Abstract:
A pixel comprises a pixel circuit connected to gate and data lines, and a light emitting diode having a first electrode connected to the pixel circuit, wherein the pixel circuit may include a driving thin film transistor connected to the first electrode of the light emitting diode, a first capacitor formed in a horizontal direction between a gate electrode and a source electrode of the driving thin film transistor, and a second capacitor formed in a vertical direction between the gate electrode of the driving thin film transistor and the first electrode of the light emitting diode.
Abstract:
A light emitting display device comprises a subpixel having a light emitting element disposed in a light emission area on a substrate and a circuit area in which a circuit for driving the light emitting element is disposed, a gate line disposed in the circuit area in a first direction, and at least one power line disposed in a second direction crossing the first direction, the at least one power line including a first power bridge line and a second power bridge line which are spaced apart from each other in the first direction.
Abstract:
The present disclosure relates to a thin film transistor substrate having a metal oxide semiconductor for the fringe field type flat panel displays and a method for manufacturing the same. The thin film transistor substrate having an oxide semiconductor layer can include a substrate including pixel region; a gate element formed on the substrate; a gate insulating layer covering the gate element; a channel layer on the gate insulating layer, a source area expanded form a first side of the channel layer, a drain area expanded from a second side of the channel layer, and a pixel electrode expanded from the drain area to the pixel region; an etch stopper formed on the channel layer; a data element formed on the etch stopper; and a common electrode formed on the passivation layer and within the pixel region.
Abstract:
A pixel is discussed, which is disposed in a pixel area defined by a gate line, a data line and a pixel power line, and includes a light emission portion and a pixel circuit, wherein the pixel circuit can include a protrusion electrode protruded from the gate line along a length direction of the data line, and first and second thin film transistors disposed in parallel between the light emission portion and the gate line, using the protrusion electrode as a gate electrode.
Abstract:
According to an aspect of the present disclosure, a display device includes: a plurality of substrates disposed in a plurality of subpixels and each configured as one of a transparent conducting oxide layer and an oxide semiconductor layer; a plurality of transistors respectively disposed on the plurality of substrates and provided in the plurality of subpixels, respectively; a plurality of data lines extending in a column direction between the plurality of subpixels and configured to transmit data voltages to the plurality of subpixels; and a plurality of light-emitting elements respectively disposed in the plurality of subpixels and electrically connected to the plurality of transistors, in which the plurality of substrates is disposed to spaced apart from one another, and in which the plurality of data lines is disposed in a region in which the plurality of substrates is spaced apart from one another.
Abstract:
A thin film transistor substrate includes: pluralities of gate lines and data lines arranged to define a plurality of pixel regions, and a plurality of thin film transistors formed on the pixel regions in such a manner as to include first and second thin film transistors connected to the same gate line and the pixel regions adjacent to each other. Each of the first and second thin film transistors includes: a gate electrode connected to the gate line; a semiconductor layer formed on the gate line in an octagon shape; a source electrode connected to the data line; and a drain electrode formed in an opposite shape to the source electrode.