公开(公告)号：US10741697B2

公开(公告)日：2020-08-11

申请号：US16211151

申请日：2018-12-05

Applicant: LG Display Co., Ltd.

Inventor： Jiyong Noh ,  Jaeman Jang ,  JuHeyuck Baeck ,  PilSang Yun

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L21/02 ,  H01L21/38 ,  G02F1/1368 ,  H01L27/32

Abstract: A thin film transistor is provided. The thin film transistor includes an oxide semiconductor layer on a substrate, a gate electrode insulated from the oxide semiconductor layer to overlap at least a portion of the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode spaced apart from the source electrode and connected to the oxide semiconductor layer. The oxide semiconductor layer includes a first oxide semiconductor layer on the substrate and a second oxide semiconductor layer on the first oxide semiconductor layer, the first oxide semiconductor layer includes nitrogen of 1 at % to 5 at % concentration with respect to number of atoms, and the second oxide semiconductor layer has a nitrogen concentration which is lower than a nitrogen concentration of the first oxide semiconductor layer and a gradient of the nitrogen concentration such that the nitrogen concentration is lowered in a direction closer to the gate electrode.

公开(公告)号：US12087835B2

公开(公告)日：2024-09-10

申请号：US18217147

申请日：2023-06-30

Applicant: LG Display Co., Ltd.

Inventor： Dohyung Lee ,  JuHeyuck Baeck ,  ChanYong Jeong

IPC: H01L29/423 ,  H01L27/146 ,  H01L29/43

CPC classification number: H01L29/42376 ,  H01L27/14614 ,  H01L29/42384 ,  H01L29/435

Abstract: A thin film transistor array substrate and an electronic device including the thin film transistor array are disclosed. The thin film transistor comprises a substrate, a first active layer on the substrate, a gate electrode on the first active layer, a second active layer on the gate electrode such that the gate electrode is between the first active layer and the second active layer. The gate electrode is configured to drive the first active layer and the second active layer. Thereby, it is possible to provide the thin film transistor array substrate including one or more thin film transistors having high current characteristics in a small area, and the electronic device including the thin film transistor array substrate.

公开(公告)号：US11881531B2

公开(公告)日：2024-01-23

申请号：US17950024

申请日：2022-09-21

Applicant: LG Display Co., Ltd.

Inventor： JuHeyuck Baeck ,  Dohyung Lee ,  ChanYong Jeong

IPC: H01L29/786 ,  H10K59/124 ,  H01L27/12

CPC classification number: H01L29/78645 ,  H01L27/124 ,  H01L27/1214 ,  H01L27/1222 ,  H01L29/78603 ,  H01L29/78696 ,  H10K59/124

Abstract: Provided are a thin film transistor array substrate and an electronic device including the same. More specifically, the thin film transistor array includes a first active layer including a first area, a second area spaced apart from the first area, and a channel area provided between the first area and the second area, a first gate electrode disposed on the first active layer, and a second gate electrode disposed on the same layer as the first gate electrode to overlap one end of the first gate electrode and to which a signal corresponding to a signal applied to the first gate electrode is applied. Therefore, it is possible to have a structure for simultaneously controlling the threshold voltage, mobility, and subthreshold (S) parameter of a thin film transistor.

公开(公告)号：US11735638B2

公开(公告)日：2023-08-22

申请号：US17505115

申请日：2021-10-19

Applicant: LG Display Co., Ltd.

Inventor： Dohyung Lee ,  JuHeyuck Baeck ,  ChanYong Jeong

IPC: H01L29/423 ,  H01L27/146 ,  H01L29/43

CPC classification number: H01L29/42376 ,  H01L27/14614 ,  H01L29/42384 ,  H01L29/435

Abstract: A thin film transistor array substrate and an electronic device including the thin film transistor array are disclosed. The thin film transistor comprises a substrate, a first active layer on the substrate, a gate electrode on the first active layer, a second active layer on the gate electrode such that the gate electrode is between the first active layer and the second active layer. The gate electrode is configured to drive the first active layer and the second active layer. Thereby, it is possible to provide the thin film transistor array substrate including one or more thin film transistors having high current characteristics in a small area, and the electronic device including the thin film transistor array substrate.

公开(公告)号：US11728436B2

公开(公告)日：2023-08-15

申请号：US17498246

申请日：2021-10-11

Applicant: LG DISPLAY CO., LTD.

Inventor： JuHeyuck Baeck ,  Dohyung Lee ,  ChanYong Jeong

IPC: H01L29/786 ,  H01L27/12 ,  H10K59/126 ,  H10K59/121

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/78603 ,  H01L29/78633 ,  H01L29/78696 ,  H10K59/126 ,  H10K59/1213

Abstract: A thin film transistor is disclosed. The thin film transistor comprises an active layer, and a gate electrode overlapped with the active layer, wherein the active layer includes a channel portion overlapped with the gate electrode, and the channel portion includes a source boundary portion, a drain boundary portion, and a main channel portion, wherein at least a part of the drain boundary portion have a relatively smaller thickness in comparison to a thickness of the main channel portion. Also, according to one embodiment of the present disclosure, a display apparatus comprising the thin film transistor is provided.

公开(公告)号：US20220123120A1

公开(公告)日：2022-04-21

申请号：US17505115

申请日：2021-10-19

Applicant: LG Display Co., Ltd.

Inventor： Dohyung Lee ,  JuHeyuck Baeck ,  ChanYong Jeong

IPC: H01L29/423 ,  H01L29/43 ,  H01L27/146

Abstract: A thin film transistor array substrate and an electronic device including the thin film transistor array are disclosed. The thin film transistor comprises a substrate, a first active layer on the substrate, a gate electrode on the first active layer, a second active layer on the gate electrode such that the gate electrode is between the first active layer and the second active layer. The gate electrode is configured to drive the first active layer and the second active layer. Thereby, it is possible to provide the thin film transistor array substrate including one or more thin film transistors having high current characteristics in a small area, and the electronic device including the thin film transistor array substrate.

公开(公告)号：US11127353B2

公开(公告)日：2021-09-21

申请号：US16690815

申请日：2019-11-21

Applicant: LG Display Co., Ltd.

Inventor： Dohyung Lee ,  ChanYong Jeong ,  JuHeyuck Baeck ,  Kwangll Chun

IPC: G09G3/3241 ,  G09G3/3266 ,  H01L27/12

Abstract: A display device and a signal inversion device are provided. A display device includes: a display panel including: sub-pixels, and scan lines respectively connected to each of the sub-pixels, and light emission control lines respectively connected to each of the sub-pixels, a scan driver circuit for outputting respective scan signals to the scan lines, and a light emission control driver circuit for outputting respective light emission control signals to the light emission control lines, the light emission control driver circuit including: a resistance device electrically connected between: a first voltage node for receiving a first voltage, and an output node electrically connected to the light emission control lines, and a transistor electrically connected between the output node and a second voltage node for receiving a second voltage that is different from the first voltage, wherein an on/off operation of the transistor is controlled according to an input signal.

公开(公告)号：US12249609B2

公开(公告)日：2025-03-11

申请号：US17977669

申请日：2022-10-31

Applicant: LG Display Co., Ltd.

Inventor： JuHeyuck Baeck

IPC: H01L27/12 ,  G02F1/1368 ,  H10K59/121

Abstract: A display device includes a substrate and multiple thin film transistors, each of which comprises an active layer having a channel portion, and a gate electrode that overlaps the channel portion of the active layer. The gate electrode includes a first part that at least partially overlaps the channel portion, and a second part having a thickness smaller than that of the first part, at least partially overlapping the channel portion, and light transmittance of the second part is greater than that of the first part.

公开(公告)号：US20250040194A1

公开(公告)日：2025-01-30

申请号：US18917872

申请日：2024-10-16

Applicant: LG Display Co., Ltd.

Inventor： ChanYong Jeong ,  JuHeyuck Baeck ,  Dohyung Lee ,  Younghyun Ko

IPC: H01L29/786

Abstract: Embodiments of the present disclosure relate to a thin film transistor array substrate and display device in which a semiconductor layer has a heterogeneous conductorization structure including heterogeneous conductorization portions having different electrical conductivity, and the gate insulator layer is not etched enough to expose the semiconductor layer between the source electrode part and the gate electrode part and between the drain electrode part and the gate electrode part, so that the possibility of damage to the semiconductor layer can be eliminated or reduced.

公开(公告)号：US20230361189A1

公开(公告)日：2023-11-09

申请号：US18217147

申请日：2023-06-30

Applicant: LG Display Co., Ltd.

Inventor： Dohyung Lee ,  JuHeyuck Baeck ,  ChanYong Jeong

IPC: H01L29/423 ,  H01L27/146 ,  H01L29/43

CPC classification number: H01L29/42376 ,  H01L27/14614 ,  H01L29/42384 ,  H01L29/435

Abstract: A thin film transistor array substrate and an electronic device including the thin film transistor array are disclosed. The thin film transistor comprises a substrate, a first active layer on the substrate, a gate electrode on the first active layer, a second active layer on the gate electrode such that the gate electrode is between the first active layer and the second active layer. The gate electrode is configured to drive the first active layer and the second active layer. Thereby, it is possible to provide the thin film transistor array substrate including one or more thin film transistors having high current characteristics in a small area, and the electronic device including the thin film transistor array substrate.