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公开(公告)号:US09611860B2
公开(公告)日:2017-04-04
申请号:US13998514
申请日:2013-11-07
Applicant: LG ELECTRONICS INC.
Inventor: Sangyuk Son , Junghoon Kim , Minu Son
CPC classification number: F04D29/281 , F04D29/282 , F04D29/30
Abstract: A centrifugal fan and an air conditioner using the same are provided. A gurney flap having a rectangular plate or a S-shaped, twisted gurney flap may be formed in a tip of a blade provided in or on a hub of the centrifugal fan, so that noise may be effectively reduced, and efficiency increased. Further, the blade with the gurney flap may be easily formed integrally with the hub, enhancing productivity.
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公开(公告)号:US12015106B2
公开(公告)日:2024-06-18
申请号:US17834452
申请日:2022-06-07
Applicant: LG ELECTRONICS INC.
Inventor: Junghoon Kim , Byoungkwon Cho
CPC classification number: H01L33/38 , H01L24/95 , H01L25/0753 , H01L33/24 , H01L33/44 , H01L33/62 , H01L2224/95085 , H01L2224/95133 , H01L2924/12041 , H01L2933/0016 , H01L2933/0025 , H01L2933/0066
Abstract: A display device includes a semiconductor light emitting device disposed on a substrate and having a first conductive electrode disposed on a first upper portion of the semiconductor light emitting device and a second conductive electrode disposed on a second upper portion of the semiconductor light emitting device, a passivation layer disposed on the semiconductor light emitting device, a first electrode electrically connected to the first conductive electrode, and a second electrode electrically connected to the second conductive electrode. A part of the second electrode overlaps with a part of the first conductive electrode with the passivation layer interposed therebetween.
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公开(公告)号:US11233169B2
公开(公告)日:2022-01-25
申请号:US16691113
申请日:2019-11-21
Applicant: LG ELECTRONICS INC.
Inventor: Byoungkwon Cho , Junghoon Kim
Abstract: A semiconductor light emitting element according to an embodiment of the present disclosure includes: a n-type semiconductor layer; a p-type semiconductor layer formed in a first region on the n-type semiconductor layer; a p-type electrode formed on the p-type semiconductor layer; a n-type electrode formed in a second region different from the first region on the n-type semiconductor layer; and a magnetic layer formed under the n-type semiconductor layer.
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公开(公告)号:US10443180B2
公开(公告)日:2019-10-15
申请号:US15042818
申请日:2016-02-12
Applicant: LG Electronics Inc.
Inventor: Seungjoon Lee , Namyeong Heo , Chungil Kim , Junghoon Kim
Abstract: A laundry treatment apparatus may include a cabinet defining an appearance of the laundry treatment apparatus, a drum provided in the cabinet and configured to hold laundry, a connecting duct configured to communicate with the drum, a lint filter unit that is mounted to an inner surface of the cabinet that is accessible from a front surface of the cabinet, and that is configured to communicate with the connecting duct to filter pollutant and a lock unit configured to selectively lock the lint filter unit to the connecting duct, where the lock unit includes a rotatable lock body, a shaft configured to rotate together with the lock body, at least one bent portion, and a lock guide with at least one bent section.
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