公开(公告)号：US20170338380A1

公开(公告)日：2017-11-23

申请号：US15532349

申请日：2015-12-24

Applicant: LG INNOTEK CO., LTD.

Inventor： Keon Hwa LEE ,  Byeong Kyun CHOI

IPC: H01L33/46 ,  H01L33/00 ,  H01L33/38 ,  H01L33/62 ,  H01L25/075 ,  H01L33/40 ,  H01L33/20

CPC classification number: H01L33/46 ,  H01L25/0753 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/385 ,  H01L33/405 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0066

Abstract: Provided in one embodiment is a light emitting diode comprising: a light emitting structure including a first conductive semiconductor layer, an active layer on top of the first conductive semiconductor layer, and a second conductive semiconductor layer on top of the active layer; a first electrode arranged on a portion of the first conductive semiconductor layer; an insulating layer, which is arranged on a portion of the first electrode, the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer, and which has a DBR structure; and a second electrode arranged on the second conductive semiconductor layer, wherein the first electrode comes into contact with the insulating layer via a first surface and is exposed to the insulating layer via a second surface opposite the first surface.