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    OPTICAL TRANSMISSION MODULE
    1.
    发明申请
    OPTICAL TRANSMISSION MODULE 审中-公开

    公开(公告)号：US20200083670A1

    公开(公告)日：2020-03-12

    申请号：US16469968

    申请日：2017-12-13

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Baek Jun KIM ,  Ho Jae KANG ,  Keon Hwa LEE ,  Yong Gyeong LEE

    IPC: H01S5/183 ,  H01S5/022

    Abstract: Embodiments relate to a semiconductor device, an optical transmission module, and an optical transmission apparatus. An optical transmission module according to an embodiment includes a board; a submount disposed on a first surface of the board; a vertical cavity surface emitting laser (VCSEL) semiconductor device disposed on a first surface of the submount; and a module housing including a coupling unit and a body, the coupling unit spaced apart from the vertical cavity surface emitting laser (VCSEL) semiconductor device and facing the first surface of the submount, the body extending from the coupling unit toward the first surface of the board and disposed around the submount and the vertical cavity surface emitting laser (VCSEL) semiconductor device.

    LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING ELEMENT ARRAY COMPRISING THE SAME
    2.
    发明申请
    LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING ELEMENT ARRAY COMPRISING THE SAME 审中-公开

    公开(公告)号：US20170365744A1

    公开(公告)日：2017-12-21

    申请号：US15540507

    申请日：2015-11-27

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Keon Hwa LEE ,  Su Hyoung SON

    IPC: H01L33/38 ,  H01L33/30 ,  H01L33/20 ,  H01L33/40 ,  H01L33/06

    CPC classification number: H01L33/385 ,  H01L33/06 ,  H01L33/20 ,  H01L33/30 ,  H01L33/405

    Abstract: Embodiments of a light-emitting element and a light-emitting element array comprise: a light-emitting structure which includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; first and second electrodes which are disposed respectively on the first and second conductive type semiconductor layers; and an insulation layer which is disposed on the light-emitting structure exposed between the first electrode and the second electrode, wherein the second electrode comprises a light-emitting element including: a first part which overlaps with the second conductive type semiconductor layer in the thickness direction of the light-emitting structure; and a second part which extends from the first part and does not overlap with the second conductive type semiconductor layer in the thickness direction, thereby being capable of improving the productivity of a light-emitting element manufacturing process while minimizing the light leakage phenomenon between the light-emitting structure and the second electrode.

    SEMICONDUCTOR DEVICE PACKAGE AND METHOD FOR PRODUCING SAME
    3.
    发明申请
    SEMICONDUCTOR DEVICE PACKAGE AND METHOD FOR PRODUCING SAME 审中-公开

    公开(公告)号：US20200036161A1

    公开(公告)日：2020-01-30

    申请号：US16465461

    申请日：2017-12-13

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Baek Jun KIM ,  Ho Jae KANG ,  Hui Seong KANG ,  Keon Hwa LEE ,  Yong Gyeong LEE

    IPC: H01S5/024 ,  H01S5/022 ,  H01S5/183

    Abstract: Embodiments pertain to a semiconductor device package, a method of manufacturing the semiconductor device package, and an autofocusing apparatus including the semiconductor device package. The semiconductor device package according to an embodiment may include: a package body; a diffusion unit; and a vertical cavity surface emitting laser (VCSEL) semiconductor device disposed on a support and under the diffusion unit. According to the embodiment, the package body may include the support, a first sidewall protruding to a first thickness from an edge region of an upper surface of the support and having a first upper surface of a first width, and a second sidewall protruding to a second thickness from the first upper surface of the first side wall and having a second upper surface of a second width, wherein the support, the first sidewall, and the second sidewall may be integrally formed with the same material. The diffusion unit may be disposed on the first upper surface of the first sidewall and may be disposed to be surrounded by the second sidewall.

    SEMICONDUCTOR DEVICE
    7.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20190386189A1

    公开(公告)日：2019-12-19

    申请号：US16476773

    申请日：2018-01-25

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Keon Hwa LEE ,  Su Ik PARK ,  Yong Gyeong LEE ,  Baek Jun KIM ,  Myung Sub KIM

    IPC: H01L33/60 ,  H01L33/30 ,  H01L33/40

    Abstract: A semiconductor device according to an embodiment may include a plurality of light emitting structures, a first electrode disposed around the plurality of light emitting structures, a second electrode disposed on an upper surface of the plurality of light emitting structures, a first bonding pad electrically connected to the first electrode, and a second bonding pad electrically connected to the second electrode. The plurality of light emitting structures may include a first light emitting structure that includes a first DBR layer of a first conductivity type, a first active layer disposed on the first DBR layer, and a second DBR layer of a second conductivity type disposed on the first active layer; and a second light emitting structure that includes a third DBR layer of the first conductivity type, a second active layer disposed on the third DBR layer, and a fourth DBR layer of the second conductivity type disposed on the second active layer. The first electrode may be electrically connected to the first DBR layer and the third DBR layer, and disposed between the first light emitting structure and the second light emitting structure. The second electrode may be electrically connected to the second DBR layer and the fourth DBR layer, and disposed on an upper surface of the second DBR layer and an upper surface of the fourth DBR layer.

    LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, LIGHT UNIT, AND METHOD OF MANUFACTURING SAME
    8.
    发明申请
    LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, LIGHT UNIT, AND METHOD OF MANUFACTURING SAME 审中-公开

    公开(公告)号：US20170352785A1

    公开(公告)日：2017-12-07

    申请号：US15539277

    申请日：2015-12-24

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Keon Hwa LEE

    IPC: H01L33/36 ,  H01L21/285 ,  H01L29/16 ,  H01L33/54 ,  H01L33/56 ,  H01L21/18 ,  H01L29/66 ,  H01L21/205

    CPC classification number: H01L33/36 ,  H01L21/182 ,  H01L21/2053 ,  H01L21/28512 ,  H01L29/16 ,  H01L29/66136 ,  H01L33/382 ,  H01L33/486 ,  H01L33/54 ,  H01L33/56 ,  H01L33/62 ,  H01L2933/0016

    Abstract: The embodiment relates to a light emitting device, a method of fabricating the same, a light emitting device package, and a lighting system. According to the embodiment, a light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first electrode electrically connected with the first conductive semiconductor layer, a second electrode electrically connected with the second conductive semiconductor layer, an insulating member provided on the light emitting structure while exposing the first electrode and the second electrode, a third electrode provided on the first electrode, and a fourth electrode provided on the second electrode. The third electrode includes a first part of the third electrode directly making contact with the first electrode and a second part of the third electrode, which is provided on the first part of the third electrode and has a horizontal width wider than the first part of the third electrode, and the fourth electrode includes a first part of the fourth electrode directly making contact with the second electrode and a second part of the fourth electrode, which is provided on the first part of the fourth electrode and has a horizontal width wider than the first part of the fourth electrode. The light extraction efficiency and the heat radiation characteristic may be improved, and the reliability may be improved.

    LIGHT EMITTING DEVICE AND LIGHT UNIT HAVING THE SAME
    9.
    发明申请
    LIGHT EMITTING DEVICE AND LIGHT UNIT HAVING THE SAME 有权
    发光装置和具有该发光装置的光单元

    公开(公告)号：US20150349223A1

    公开(公告)日：2015-12-03

    申请号：US14673501

    申请日：2015-03-30

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Keon Hwa LEE

    IPC: H01L33/62

    CPC classification number: H01L33/62 ,  H01L33/0079 ,  H01L33/486 ,  H01L33/642 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/83101 ,  H01L2924/00

    Abstract: A light emitting device includes a support member having a body, first and second pads spaced apart from each other on the body and a depression in the body; a light emitting chip having a light emitting structure and third and fourth pads under the light emitting structure; and an adhesive member between the support member and the light emitting chip, wherein the third pad is electrically connected to the first pad, the fourth pad is electrically connected to the second pad, the light emitting structure includes a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, and a portion of the adhesive member is disposed in the depression.

    Abstract translation: 发光装置包括具有主体的支撑构件，在主体上彼此间隔开的第一和第二垫以及主体中的凹陷; 具有发光结构的发光芯片和位于所述发光结构下面的第三和第四焊盘; 以及在所述支撑构件和所述发光芯片之间的粘合构件，其中所述第三衬垫电连接到所述第一衬垫，所述第四衬垫电连接到所述第二衬垫，所述发光结构包括第一导电半导体层， 层和第二导电半导体层，并且粘合构件的一部分设置在凹部中。

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