Abstract:
FIG. 1 is a top perspective view of a drone, showing my new design; FIG. 2 is a bottom perspective view thereof; FIG. 3 is a front view thereof; FIG. 4 is a rear view thereof; FIG. 5 is a left side view thereof; FIG. 6 is a right side view thereof; FIG. 7 is a top view thereof; and, FIG. 8 is a bottom view thereof. The broken lines in the drawings illustrate the portions of the drone, which form no part of the claimed design.
Abstract:
FIG. 1 is a front, left and top perspective view of a camping trailer, showing my new design; FIG. 2 is a rear, right and bottom perspective view thereof; FIG. 3 is a front view thereof; FIG. 4 is a rear view thereof; FIG. 5 is a left side view thereof; FIG. 6 is a right side view thereof; FIG. 7 is a top plan view thereof; FIG. 8 is a bottom plan view thereof; FIG. 9 is an enlarged view of portion of FIG. 1 thereof; FIG. 10 is an enlarged view of portion of FIG. 1 thereof; FIG. 11 is an enlarged view of portion of FIG. 1 thereof; and, FIG. 12 is a perspective view in the using configuration of FIG. 1 thereof. The dot-dash broken lines depict the boundaries of the enlargements that form no part of the claimed design,
Abstract:
A method of restoring a corrupted audio signal comprises the steps of; inputting the corrupted audio signal in a first channel (30-32), inputting one or more further correlated audio signals in one or more further channels (33-35), and restoring the corrupted audio signal (36) using a Multi-Channel Autoregressive (AR) Model that models the corrupted signal as a linear combination of scaled time shifted portions of the further signal (s) and the corrupted signal. Embodiments are described in which the method is used to improve received audio signals in DAB receivers and mobile telephones.
Abstract:
A method for forming a metal oxide semiconductor field-effect transistor (MOSFET) includes forming a III-V compound semiconductor on a substrate with the III-V compound semiconductor being doped with a first dopant type. The method further includes doping a first and second region of the III-V compound semiconductor with a second dopant type to form a drain and a source of the MOSFET. The method further includes forming a gate dielectric on the III-V compound semiconductor through atomic layer deposition. The method further includes applying a metal onto the dielectric to form a gate of the MOSFET. A MOSFET is also disclosed herein.
Abstract:
A scooter including a footboard, a rear wheel, a front wheel rod fastened to the front end of the footboard in conjunction with a folding member, a handlebar fastened to the top end of the front wheel rod, a wheel frame fastened to the bottom end of the front wheel rod, and a front wheel member fastened pivotally to the wheel frame and formed of three front wheels to stabilize the scooter in motion. Two of the three front wheels are in contact with the ground surface, with the remaining one front wheel being pivoted over the two front wheels such that the remaining one front wheel is capable of swiveling to come in contact with the ground surface at the time when one of the two front wheels encounters an obstacle. The folding member enables the front wheel rod to swivel toward the footboard so as to facilitate the storage or transportation of the scooter.
Abstract:
A method for manufacturing SRAM loads comprising the steps of sequentially forming a silicon oxide layer and a silicon nitride layer over a polysilicon layer. Then, the silicon oxide layer and the silicon nitride layer are patterned to form vias exposing a load region. Thereafter, using a thermal oxidation operation, an oxide layer is formed above the load region. Subsequently, the silicon nitride layer and the silicon oxide layer are removed. Through the formation of an oxide layer over the load region, the cross-sectional thickness and width of the load are reduced, thereby moderating the out-diffusion of ions while maintaining the load resistance. Furthermore, the oxide layer, which forms over the load region in the back-end process, can serve as a barrier layer preventing the out-diffusion of ions and blocking incoming moisture.
Abstract:
FIG. 1 is a front, left and top perspective view of a camping trailer, showing my new design; FIG. 2 is a rear, right and bottom perspective view thereof; FIG. 3 is a front view thereof; FIG. 4 is a rear view thereof; FIG. 5 is a left side view thereof; FIG. 6 is a right side view thereof; FIG. 7 is a top plan view thereof; FIG. 8 is a bottom plan view thereof; FIG. 9 is an enlarged view of portion of FIG. 1 thereof; FIG. 10 is an enlarged view of portion shown in FIG. 2 thereof; and, FIG. 11 is an enlarged view of portion shown in FIG. 2 thereof. The dot-dash broken lines depict the boundaries of the enlargements that form no part of the claimed design.
Abstract:
A high voltage ceramic and glass insulator with a function film is provided to resist pollution flashover and a preparation method is provided to produce the high voltage insulators. It is a common high voltage insulator covered with a layer of nano meter level inorganic film with the function of raising pollution flashover resisting, and the film is formed on the high voltage ceramic and glass insulator surface and made of a solution containing the titanium dioxide base, and the solution containing the titanium dioxide base includes a pure titanium dioxide solution or a binary compound oxide solution containing the titanium dioxide. The invention is suitably used for the power transmission and the transform line in the areas with the circumstance seriously polluted or in the remote mountainous areas.
Abstract:
The invention discloses a method and device for image filtering in the field of communication technologies, the method including: acquiring image data of a pixel dot of a current row to be filtered and a corresponding pixel dot of at least one adjacent row; obtaining contrast information containing a transparency value, of the pixel dot of the current row and the pixel dot of the adjacent row respectively by resolving the image data of the pixel dot of the current row and the pixel dot of the adjacent row; generating a filter coefficient according to the transparency value of the pixel dot of the current row and the transparency value of the corresponding pixel dot of the adjacent row; and performing filtering on the pixel dot of the current row with the filter coefficient. The embodiments of the invention effectively avoid image flickering due to a difference between contrasts by adopting the method of at-least-two-row vertical filtering, and by generating the filter coefficients according to the transparencies in filtering.
Abstract:
Field effect transistor devices comprising III-V semiconductors and organic gate dielectric materials, such dielectric materials as can afford flexibility in device design and fabrication.