公开(公告)号：US20210225433A1

公开(公告)日：2021-07-22

申请号：US17159706

申请日：2021-01-27

Applicant: Micron Technology, Inc.

Inventor： Stephen Michael Kaminski ,  Anthony D. Veches ,  James S. Rehmeyer ,  Debra M. Bell ,  Dale Herber Hiscock ,  Joshua E. Alzheimer

IPC: G11C11/406 ,  G11C11/4072 ,  G11C11/4091

Abstract: Methods, systems, and devices for refresh-related activation in memory are described. A memory device may conduct a refresh operation to preserve the integrity of data. A refresh operation may be associated with a refresh time where the memory device is unable to execute or issue any commands (e.g., access commands). By posting (e.g., saving) one or more commands and/or row addresses during the refresh time, the memory device may be configured to execute the saved commands and/or re-open one or more rows associated with the saved row addresses at a later time (e.g., upon completion of the refresh operation). Accordingly, fewer commands may be issued to activate the memory cells after the refresh time.

公开(公告)号：US11062755B2

公开(公告)日：2021-07-13

申请号：US16693949

申请日：2019-11-25

Applicant: Micron Technology, Inc.

Inventor： Dale H. Hiscock ,  Debra M. Bell ,  Michael Kaminski ,  Joshua E. Alzheimer ,  Anthony D. Veches ,  James S. Rehmeyer

IPC: G11C7/00 ,  G11C11/406 ,  G11C29/00 ,  G11C11/409 ,  G11C11/4074

Abstract: Memory with partial bank refresh is disclosed herein. In one embodiment, a memory system includes a memory controller and a memory device operably connected to the memory controller. The memory device includes (i) a memory array having a memory bank with a plurality of memory cells arranged in a plurality of memory rows and (ii) circuitry. In some embodiments, the circuitry is configured to disable at least one memory row of the memory bank from receiving refresh commands such that memory cells of the at least one memory row are not refreshed during refresh operations of the memory device. In some embodiments, the memory controller is configured to track memory rows that include utilized memory cells and/or to write data to the memory rows in accordance with a programming sequence of the memory device.

公开(公告)号：US20210149569A1

公开(公告)日：2021-05-20

申请号：US17157797

申请日：2021-01-25

Applicant: Micron Technology, Inc.

Inventor： Erika Prosser ,  Aaron P. Boehm ,  Debra M. Bell

IPC: G06F3/06 ,  G06F11/07

Abstract: Methods, systems, and devices for a memory error indicator related to high-reliability applications are described. A memory device may perform error detection procedures to monitor trends in the quantity of bit errors as an indication of the health of the memory device. A memory device may perform error detection procedures concurrently with refresh procedures to detect a quantity of errors (e.g., in a memory array) without degrading the performance of the device or the memory array. The memory device may compare a quantity of errors detected (e.g., in the memory array) with one or more previously detected quantities of errors to determine one or more differences in the quantities of errors. The memory device may generate an error metric based on the differences, and may determine whether the error metric satisfies a threshold. The memory device may output a status indicator (e.g., to a host device) based on whether the error metric satisfies the threshold.

公开(公告)号：US10990317B2

公开(公告)日：2021-04-27

申请号：US16553859

申请日：2019-08-28

Applicant: Micron Technology, Inc.

Inventor： Anthony D. Veches ,  Debra M. Bell ,  James S. Rehmeyer ,  Robert Bunnell ,  Nathaniel J. Meier

IPC: G06F3/06 ,  G11C17/16 ,  G11C17/18 ,  G11C11/4072 ,  G11C11/4091

Abstract: Memory devices and systems with automatic background precondition upon powerup, and associated methods, are disclosed herein. In one embodiment, a memory device includes a memory array having a plurality of memory cells at intersections of memory rows and memory columns. The memory device further includes sense amplifiers corresponding to the memory rows. When the memory device powers on, the memory device writes one or more memory cells of the plurality of memory cells to a random data state before executing an access command received from a user, a memory controller, or a host device of the memory device. In some embodiments, to write the one or more memory cells, the memory device fires multiple memory rows at the same time without powering corresponding sense amplifiers such that data stored on memory cells of the multiple memory rows is overwritten and corrupted.

公开(公告)号：US20210118490A1

公开(公告)日：2021-04-22

申请号：US17135403

申请日：2020-12-28

Applicant: Micron Technology, Inc.

Inventor： James S. Rehmeyer ,  Debra M. Bell ,  George B. Raad ,  Brian P. Callaway ,  Joshua E. Alzheimer

IPC: G11C11/406 ,  G11C11/408 ,  G11C11/403

Abstract: A memory device may include a phase driver circuit that may output a first voltage for refreshing a plurality of memory cells. The memory device may also include a plurality of word line driver circuits that may receive the first voltage via the phase driver circuit, such that each word line driver circuit of the plurality of word line driver circuits may provide the first voltage to a respective word line associated with a respective portion of the plurality of memory cells. In addition, each word line driver circuit may refresh the respective portion of the plurality of memory cells based on a respective word line enable signal provided to a first switch of the respective word line driver circuit.

公开(公告)号：US10936209B2

公开(公告)日：2021-03-02

申请号：US16433848

申请日：2019-06-06

Applicant: Micron Technology, Inc.

Inventor： Erika Prosser ,  Aaron P. Boehm ,  Debra M. Bell

IPC: G06F11/00 ,  G06F3/06 ,  G06F11/07

Abstract: Methods, systems, and devices for a memory error indicator related to high-reliability applications are described. A memory device may perform error detection procedures to monitor trends in the quantity of bit errors as an indication of the health of the memory device. A memory device may perform error detection procedures concurrently with refresh procedures to detect a quantity of errors (e.g., in a memory array) without degrading the performance of the device or the memory array. The memory device may compare a quantity of errors detected (e.g., in the memory array) with one or more previously detected quantities of errors to determine one or more differences in the quantities of errors. The memory device may generate an error metric based on the differences, and may determine whether the error metric satisfies a threshold. The memory device may output a status indicator (e.g., to a host device) based on whether the error metric satisfies the threshold.

公开(公告)号：US10803969B1

公开(公告)日：2020-10-13

申请号：US16553842

申请日：2019-08-28

Applicant: Micron Technology, Inc.

Inventor： Debra M. Bell ,  Shea M. Morrison ,  Aparna U. Limaye ,  Diana C. Majerus ,  Rachael R. Carlson

IPC: G11C11/409 ,  G11C29/02 ,  G06F21/79 ,  G06F12/14

Abstract: Apparatuses and methods related to authenticating memory. Memory devices can be authenticated utilizing authentication codes. An authentication code can be generated based on information stored in a fuse array of the memory device. The authentication code can be compared to an externally provided authentication code to authenticate the memory device. The memory device may be authenticated to ensure that the memory device is not a security threat.

公开(公告)号：US20200211636A1

公开(公告)日：2020-07-02

申请号：US16237013

申请日：2018-12-31

Applicant: Micron Technology, Inc.

Inventor： Dale H. Hiscock ,  Debra M. Bell ,  Michael Kaminski ,  Joshua E. Alzheimer ,  Anthony D. Veches ,  James S. Rehmeyer

IPC: G11C11/406 ,  G11C11/4072 ,  G11C11/4074 ,  G11C16/10

Abstract: Memory devices and systems with partial array refresh control over memory regions in a memory array, and associated methods, are disclosed herein. In one embodiment, a memory system includes a memory controller and a memory device operably connected to the memory controller. The memory device includes (i) a memory array having a plurality of memory cells arranged in a plurality of memory regions and (ii) inhibit circuitry. In some embodiments, the inhibit circuitry is configured to disable one or more memory regions of the plurality of memory regions from receiving refresh commands such that memory cells of the one or more memory regions are not refreshed during refresh operations of the memory device. In these and other embodiments, the memory controller is configured to track memory regions that include utilized memory cells and/or to write data to the memory regions in accordance with a programming sequence of the memory device.

公开(公告)号：US20190393227A1

公开(公告)日：2019-12-26

申请号：US16427176

申请日：2019-05-30

Applicant: Micron Technology, Inc.

Inventor： Debra M. Bell

IPC: H01L27/11 ,  H01L27/092 ,  G11C11/412 ,  G11C11/419

Abstract: Some embodiments include an integrated assembly having a first pull-down transistor, a second pull-down transistor, a first pull-up transistor and a second pull-up transistor. The first pull-down transistor has a first conductive-gate-body at a first level, and has an n-channel-device-active-region at a second level vertically offset from the first level. The first pull-up transistor has a second conductive-gate-body at the first level, and has a p-channel-device-active-region at the second level. The second pull-down transistor has a third conductive-gate-body at the second level, and has an n-channel-device-active-region at the first level. The second pull-up transistor has a fourth conductive-gate-body at the second level, and has a p-channel-device-active-region at the first level.

公开(公告)号：US20180308853A1

公开(公告)日：2018-10-25

申请号：US15796611

申请日：2017-10-27

Applicant: Micron Technology, Inc.

Inventor： Debra M. Bell ,  Scott J. Derner

IPC: H01L27/11 ,  H01L21/762

CPC classification number: H01L27/1112 ,  G11C11/412 ,  G11C11/419 ,  H01L21/76202 ,  H01L27/1104

Abstract: Some embodiments include memory cells having four transistors supported by a base, and vertically offset from the base. The four transistors are incorporated into first and second inverters having first and second inverter outputs, respectively. A first access transistor gatedly couples the first inverter output to a first comparative bitline, and second access transistor gatedly couples the second inverter output to a second comparative bitline. The first and second access transistors have first and second gates coupled to one another through a wordline. The four transistors are along a first side of the wordline, and are vertically displaced from the wordline. The first and second comparative bitlines are laterally adjacent to one another along a second side of the wordline, and are vertically displaced from the wordline. Some embodiments include memory arrays.