公开(公告)号：US20150221540A1

公开(公告)日：2015-08-06

申请号：US14173489

申请日：2014-02-05

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Shu Qin ,  Ming Zhang

IPC: H01L21/683 ,  H01L21/762

CPC classification number: H01L21/6833 ,  H01L21/76251

Abstract: Various embodiments of microelectronic devices and methods of manufacturing are described herein. In one embodiment, a method for enhancing wafer bonding includes positioning a substrate assembly on a unipolar electrostatic chuck in direct contact with an electrode, electrically coupling a conductor to a second substrate positioned on top of the first substrate, and applying a voltage to the electrode, thereby creating a potential differential between the first substrate and the second substrate that generates an electrostatic force between the first and second substrates.

Abstract translation: 这里描述了微电子器件和制造方法的各种实施例。 在一个实施例中，一种用于增强晶片接合的方法包括将基板组件定位在与电极直接接触的单极静电卡盘上，将导体电耦合到位于第一基板顶部的第二基板，以及向电极施加电压 从而在第一基板和第二基板之间产生在第一和第二基板之间产生静电力的电位差。

公开(公告)号：US09034570B2

公开(公告)日：2015-05-19

申请号：US14192410

申请日：2014-02-27

Applicant: Micron Technology, Inc.

Inventor： Scott E. Sills ,  Gurtej S. Sandhu ,  John Smythe ,  Ming Zhang

IPC: G03F7/26 ,  H01L21/027 ,  G03F7/40 ,  H01L21/033 ,  G03F7/20

CPC classification number: H01L21/0274 ,  G03F7/20 ,  G03F7/40 ,  H01L21/0337 ,  H01L21/0338

Abstract: Some embodiments include methods of forming patterns of openings. The methods may include forming spaced features over a substrate. The features may have tops and may have sidewalls extending downwardly from the tops. A first material may be formed along the tops and sidewalls of the features. The first material may be formed by spin-casting a conformal layer of the first material across the features, or by selective deposition along the features relative to the substrate. After the first material is formed, fill material may be provided between the features while leaving regions of the first material exposed. The exposed regions of the first material may then be selectively removed relative to both the fill material and the features to create the pattern of openings.

Abstract translation: 一些实施例包括形成开口图案的方法。 所述方法可以包括在衬底上形成间隔的特征。 特征可以具有顶部并且可以具有从顶部向下延伸的侧壁。 第一材料可以沿着特征的顶部和侧壁形成。 第一材料可以通过将特征上的第一材料的共形层旋转浇铸而形成，或通过相对于基底的特征的选择性沉积来形成。 在形成第一材料之后，可以在特征之间提供填充材料，同时使第一材料的区域暴露。 然后可以相对于填充材料和特征来选择性地去除第一材料的暴露区域以产生开口图案。

公开(公告)号：US10153190B2

公开(公告)日：2018-12-11

申请号：US14173489

申请日：2014-02-05

Applicant: Micron Technology, Inc.

Inventor： Shu Qin ,  Ming Zhang

IPC: H01L21/683 ,  H01L21/762

Abstract: Various embodiments of microelectronic devices and methods of manufacturing are described herein. In one embodiment, a method for enhancing wafer bonding includes positioning a substrate assembly on a unipolar electrostatic chuck in direct contact with an electrode, electrically coupling a conductor to a second substrate positioned on top of the first substrate, and applying a voltage to the electrode, thereby creating a potential differential between the first substrate and the second substrate that generates an electrostatic force between the first and second substrates.

公开(公告)号：US20170194351A1

公开(公告)日：2017-07-06

申请号：US15464060

申请日：2017-03-20

Applicant: Micron Technology, Inc.

Inventor： Sanh D. Tang ,  Ming Zhang ,  Andrew M. Bayless ,  John K. Zahurak

IPC: H01L27/12 ,  H01L21/762 ,  H01L29/04 ,  H01L21/02 ,  H01L29/16 ,  H01L21/84 ,  H01L21/306

CPC classification number: H01L27/1203 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/30604 ,  H01L21/76251 ,  H01L21/76254 ,  H01L21/84 ,  H01L27/1021 ,  H01L27/10802 ,  H01L27/12 ,  H01L27/24 ,  H01L29/04 ,  H01L29/16 ,  H01L29/7841 ,  H01L29/78603 ,  H01L29/78642 ,  H01L29/78645 ,  H01L29/78648

Abstract: Methods for fabricating semiconductor-metal-on-insulator (SMOI) structures include forming an acceptor wafer including an insulator material on a first semiconductor substrate, forming a donor wafer including a conductive material and an amorphous silicon material on a second semiconductor substrate, and bonding the amorphous silicon material of the donor wafer to the insulator material of the acceptor wafer. SMOI structures formed from such methods are also disclosed, as are semiconductor devices including such SMOI structures.

公开(公告)号：US20130102160A1

公开(公告)日：2013-04-25

申请号：US13710729

申请日：2012-12-11

Applicant: Micron Technology, Inc.

Inventor： Scott SIlls ,  Gurtej Sandhu ,  John Smythe ,  Ming Zhang

IPC: G03F7/20 ,  H01L21/027

CPC classification number: H01L21/0274 ,  G03F7/20 ,  G03F7/40 ,  H01L21/0337 ,  H01L21/0338

Abstract: Some embodiments include methods of forming patterns of openings. The methods may include forming spaced features over a substrate. The features may have tops and may have sidewalls extending downwardly from the tops. A first material may be formed along the tops and sidewalls of the features. The first material may be formed by spin-casting a conformal layer of the first material across the features, or by selective deposition along the features relative to the substrate. After the first material is formed, fill material may be provided between the features while leaving regions of the first material exposed. The exposed regions of the first material may then be selectively removed relative to both the fill material and the features to create the pattern of openings.

Abstract translation: 一些实施例包括形成开口图案的方法。 所述方法可以包括在衬底上形成间隔的特征。 特征可以具有顶部并且可以具有从顶部向下延伸的侧壁。 第一材料可以沿着特征的顶部和侧壁形成。 第一材料可以通过将特征上的第一材料的共形层旋转浇铸而形成，或通过相对于基底的特征的选择性沉积来形成。 在形成第一材料之后，可以在特征之间提供填充材料，同时使第一材料的区域暴露。 然后可以相对于填充材料和特征来选择性地去除第一材料的暴露区域以产生开口图案。

公开(公告)号：US20210366758A1

公开(公告)日：2021-11-25

申请号：US17395389

申请日：2021-08-05

Applicant: Micron Technology, Inc.

Inventor： Shu Qin ,  Ming Zhang

IPC: H01L21/683 ,  H01L21/762

Abstract: Various embodiments of microelectronic devices and methods of manufacturing are described herein. In one embodiment, a method for enhancing wafer bonding includes positioning a substrate assembly on a unipolar electrostatic chuck in direct contact with an electrode, electrically coupling a conductor to a second substrate positioned on top of the first substrate, and applying a voltage to the electrode, thereby creating a potential differential between the first substrate and the second substrate that generates an electrostatic force between the first and second substrates.

公开(公告)号：US10325926B2

公开(公告)日：2019-06-18

申请号：US15464060

申请日：2017-03-20

Applicant: Micron Technology, Inc.

Inventor： Sanh D. Tang ,  Ming Zhang ,  Andrew M. Bayless ,  John K. Zahurak

IPC: H01L21/02 ,  H01L21/84 ,  H01L27/12 ,  H01L27/24 ,  H01L29/04 ,  H01L29/16 ,  H01L29/78 ,  H01L21/306 ,  H01L21/762 ,  H01L27/102 ,  H01L27/108 ,  H01L29/786

Abstract: Methods for fabricating semiconductor-metal-on-insulator (SMOI) structures include forming an acceptor wafer including an insulator material on a first semiconductor substrate, forming a donor wafer including a conductive material and an amorphous silicon material on a second semiconductor substrate, and bonding the amorphous silicon material of the donor wafer to the insulator material of the acceptor wafer. SMOI structures formed from such methods are also disclosed, as are semiconductor devices including such SMOI structures.