公开(公告)号：US20190051823A1

公开(公告)日：2019-02-14

申请号：US16160518

申请日：2018-10-15

Applicant: Micron Technology, Inc.

Inventor： Timothy A. Quick ,  Eugene P. Marsh ,  Stefan Uhlenbrock ,  Chet E. Carter ,  Scott E. Sills

IPC: H01L45/00

Abstract: Memory cells are disclosed, which cells include a cell material and an ion-source material over the cell material. A discontinuous interfacial material is included between the cell material and the ion-source material. Also disclosed are fabrication methods and semiconductor devices including the disclosed memory cells.

公开(公告)号：US20180197735A1

公开(公告)日：2018-07-12

申请号：US15913218

申请日：2018-03-06

Applicant: Micron Technology, Inc.

Inventor： Timothy A. Quick ,  Sumeet C. Pandey ,  Stefan Uhlenbrock

IPC: H01L21/02 ,  C01B21/068 ,  C07F7/02 ,  C09D7/63 ,  H01L21/768

CPC classification number: H01L21/02208 ,  C01B21/068 ,  C07F7/025 ,  C09D7/63 ,  C23C16/00 ,  C23C16/045 ,  C23C16/345 ,  C23C16/45525 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/76831

Abstract: A silicon chalcogenate precursor comprising the chemical formula of Si(XR1)nR24-n, where X is sulfur, selenium, or tellurium, R1 is hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, each R2 is independently hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, and n is 1, 2, 3, or 4. Methods of forming the silicon chalcogenate precursor, methods of forming silicon nitride, and methods of forming a semiconductor structure are also disclosed.

公开(公告)号：US09929006B2

公开(公告)日：2018-03-27

申请号：US15215102

申请日：2016-07-20

Applicant: Micron Technology, Inc.

Inventor： Timothy A. Quick ,  Sumeet C. Pandey ,  Stefan Uhlenbrock

IPC: H01L21/31 ,  H01L21/02 ,  C01B21/068 ,  C09D7/12 ,  C07F7/02 ,  H01L21/768

CPC classification number: H01L21/02208 ,  C01B21/068 ,  C07F7/025 ,  C09D7/63 ,  C23C16/00 ,  C23C16/045 ,  C23C16/345 ,  C23C16/45525 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/76831

Abstract: A silicon chalcogenate precursor comprising the chemical formula of Si(XR1)nR24-n, where X is sulfur, selenium, or tellurium, R1 is hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, each R2 is independently hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, and n is 1, 2, 3, or 4. Methods of forming the silicon chalcogenate precursor, methods of forming silicon nitride, and methods of forming a semiconductor structure are also disclosed.

公开(公告)号：US20140308776A1

公开(公告)日：2014-10-16

申请号：US14313850

申请日：2014-06-24

Applicant: Micron Technology, Inc.

Inventor： Eugene P. Marsh ,  Timothy A. Quick ,  Stefan Uhlenbrock

IPC: H01L45/00

CPC classification number: H01L45/144 ,  C23C16/28 ,  C23C16/305 ,  C23C16/45523 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1616 ,  H01L45/1683

Abstract: A method of forming a phase change material which having germanium and tellurium therein includes depositing a germanium-containing material over a substrate. Such material includes elemental-form germanium. A gaseous tellurium-comprising precursor is flowed to the germanium-comprising material and tellurium is removed from the gaseous precursor to react with the elemental-form germanium in the germanium-comprising material to form a germanium and tellurium-comprising compound of a phase change material over the substrate. Other implementations are disclosed.

Abstract translation: 形成其中具有锗和碲的相变材料的方法包括在基底上沉积含锗材料。 这种材料包括元素形式的锗。 将含气态碲前驱体流入含锗材料，并从气态前驱体中除去碲以与含锗材料中的元素形式的锗反应，形成含锗和碲化合物的相变材料 在基板上。 公开了其他实现。

公开(公告)号：US20140073084A1

公开(公告)日：2014-03-13

申请号：US14083084

申请日：2013-11-18

Applicant: Micron Technology, Inc.

Inventor： Eugene P. Marsh ,  Timothy A. Quick ,  Stefan Uhlenbrock

IPC: H01L45/00

CPC classification number: H01L45/144 ,  C23C16/28 ,  C23C16/305 ,  C23C16/45523 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1616 ,  H01L45/1683

Abstract: A method of forming a phase change material which having germanium and tellurium therein includes depositing a germanium-containing material over a substrate. Such material includes elemental-form germanium. A gaseous tellurium-comprising precursor is flowed to the germanium-comprising material and tellurium is removed from the gaseous precursor to react with the elemental-form germanium in the germanium-comprising material to form a germanium and tellurium-comprising compound of a phase change material over the substrate. Other implementations are disclosed.

公开(公告)号：US10651375B2

公开(公告)日：2020-05-12

申请号：US16160518

申请日：2018-10-15

Applicant: Micron Technology, Inc.

Inventor： Timothy A. Quick ,  Eugene P. Marsh ,  Stefan Uhlenbrock ,  Chet E. Carter ,  Scott E. Sills

IPC: H01L45/00

Abstract: Memory cells are disclosed, which cells include a cell material and an ion-source material over the cell material. A discontinuous interfacial material is included between the cell material and the ion-source material. Also disclosed are fabrication methods and semiconductor devices including the disclosed memory cells.

公开(公告)号：US10283705B2

公开(公告)日：2019-05-07

申请号：US15915861

申请日：2018-03-08

Applicant: Micron Technology, Inc.

Inventor： Timothy A. Quick ,  Eugene P. Marsh ,  Stefan Uhlenbrock ,  Chet E. Carter ,  Scott E. Sills

IPC: H01L45/00

Abstract: Memory cells are disclosed, which cells include a cell material and an ion-source material over the cell material. A discontinuous interfacial material is included between the cell material and the ion-source material. Also disclosed are fabrication methods and semiconductor devices including the disclosed memory cells.

公开(公告)号：US20180198063A1

公开(公告)日：2018-07-12

申请号：US15915861

申请日：2018-03-08

Applicant: Micron Technology, Inc.

Inventor： Timothy A. Quick ,  Eugene P. Marsh ,  Stefan Uhlenbrock ,  Chet E. Carter ,  Scott E. Sills

IPC: H01L45/00

CPC classification number: H01L45/085 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/1608 ,  H01L45/1616

Abstract: Memory cells are disclosed, which cells include a cell material and an ion-source material over the cell material. A discontinuous interfacial material is included between the cell material and the ion-source material. Also disclosed are fabrication methods and semiconductor devices including the disclosed memory cells.

公开(公告)号：US09935264B2

公开(公告)日：2018-04-03

申请号：US14677571

申请日：2015-04-02

Applicant: Micron Technology, Inc.

Inventor： Timothy A. Quick ,  Eugene P. Marsh ,  Stefan Uhlenbrock ,  Chet E. Carter ,  Scott E. Sills

IPC: H01L45/00

CPC classification number: H01L45/085 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/1608 ,  H01L45/1616

Abstract: Memory cells are disclosed, which cells include a cell material and an ion-source material over the cell material. A discontinuous interfacial material is included between the cell material and the ion-source material. Also disclosed are fabrication methods and semiconductor devices including the disclosed memory cells.

公开(公告)号：US09865456B1

公开(公告)日：2018-01-09

申请号：US15235365

申请日：2016-08-12

Applicant: Micron Technology, Inc.

Inventor： Sumeet C. Pandey ,  Brenda D. Kraus ,  Stefan Uhlenbrock ,  John A. Smythe ,  Timothy A. Quick

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  H01L21/0217 ,  H01L21/02274

Abstract: Methods of forming silicon nitride. Silicon nitride is formed on a substrate by atomic layer deposition at a temperature of less than or equal to about 275° C. The as-formed silicon nitride is exposed to a plasma. The silicon nitride may be formed as a portion of silicon nitride and at least one other portion of silicon nitride. The portion of silicon nitride and the at least one other portion of silicon nitride may be exposed to a plasma treatment. Methods of forming a semiconductor structure are also disclosed, as are semiconductor structures and silicon precursors.