公开(公告)号：US11094643B2

公开(公告)日：2021-08-17

申请号：US16372950

申请日：2019-04-02

Applicant: Micron Technology, Inc.

Inventor： Kendall Smith ,  Kari McLaughlin ,  Mario J. Di Cino ,  Xue Chen ,  Lane A. Gray ,  Joseph G. Lindsey

IPC: H01L23/544 ,  H01L21/768 ,  H01L21/027 ,  H01L23/528 ,  H01L21/3213

Abstract: Methods, apparatuses, and systems related to determining overlay of features of a memory array are described. An example method includes forming a plurality of contacts on a working surface and selectively forming a first portion of a layer of conductive lines and a second portion of the layer of conductive lines in contact with the contacts. The first portion of the layer of conductive lines formed over the working surface is separated from the second portion of the layer of conductive lines formed over the working surface by a gap. The method includes determining an overlay of at least one of the contacts formed over the working surface in the gap relative to one of the conductive lines formed over the working surface.

公开(公告)号：US20160307839A1

公开(公告)日：2016-10-20

申请号：US15192060

申请日：2016-06-24

Applicant: Micron Technology, Inc.

Inventor： Adam L. Olson ,  Kaveri Jain ,  Lijing Gou ,  William R. Brown ,  Ho Seop Eom ,  Xue Chen ,  Anton J. deVilliers

IPC: H01L23/528 ,  H01L21/308 ,  H01L21/768

CPC classification number: H01L23/528 ,  H01L21/0226 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/441 ,  H01L21/467 ,  H01L21/76804 ,  H01L21/76816 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/52 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming a semiconductor structure comprises forming pools of acidic or basic material in a substrate structure. A resist is formed over the pools of acidic or basic material and the substrate structure. The acidic or basic material is diffused from the pools into portions of the resist proximal to the pools more than into portions of the resist distal to the pools. Then, the resist is exposed to a developer to remove a greater amount of the resist portions proximal to the pools compared to the resist portions distal to the pools to form openings in the resist. The openings have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure. The method may further comprise forming features in the openings of the resist. The features have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure.

Abstract translation: 形成半导体结构的方法包括在衬底结构中形成酸性或碱性材料的集合体。 在酸性或碱性材料和衬底结构的池之上形成抗蚀剂。 酸性或碱性材料从池中扩散到靠近池的抗蚀剂的部分，而不是远离池的抗蚀剂的部分。 然后，与远离池的抗蚀剂部分相比，抗蚀剂暴露于显影剂以除去更靠近池的抗蚀剂部分，以在抗蚀剂中形成开口。 开口具有靠近基板结构的较宽部分和远离基板结构的较窄部分。 该方法还可以包括在抗蚀剂的开口中形成特征。 这些特征具有靠近基底结构的较宽部分和远离基底结构的较窄部分。

公开(公告)号：US09177795B2

公开(公告)日：2015-11-03

申请号：US14040245

申请日：2013-09-27

Applicant: Micron Technology, Inc.

Inventor： Nicholas Hendricks ,  Adam L. Olson ,  William R. Brown ,  Ho Seop Eom ,  Xue Chen ,  Kaveri Jain ,  Scott Schuldenfrei

IPC: H01L21/302 ,  H01L21/027 ,  C08G81/00

CPC classification number: H01L21/0273 ,  B81C1/00031 ,  B81C2201/0149 ,  C08G81/00 ,  C08L53/005 ,  H01L21/02118 ,  H01L21/02175 ,  H01L21/02318 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31058

Abstract: A method of forming nanostructures may include forming a block copolymer composition within a trench in a material on a substrate, wherein the block copolymer composition may comprise a block copolymer material and an activatable catalyst having a higher affinity for a first block of the block copolymer material compared to a second block of the block copolymer material; self-assembling the block copolymer composition into first domains comprising the first block and the activatable catalyst, and second domains comprising the second block; generating catalyst from the activatable catalyst in at least one portion of the first domains to produce a structure comprising catalyst-containing domains and the second domains, the catalyst-containing domains comprising the first block and the catalyst; and reacting a metal oxide precursor with the catalyst in the catalyst-containing domains to produce a metal oxide-containing structure comprising the first block and metal oxide.

Abstract translation: 形成纳米结构的方法可以包括在衬底中的材料中的沟槽内形成嵌段共聚物组合物，其中嵌段共聚物组合物可以包含嵌段共聚物材料和对于嵌段共聚物材料的第一嵌段具有更高亲和力的可活化催化剂 与第二嵌段共聚物材料相比; 将嵌段共聚物组合物自组装成包含第一嵌段和可活化催化剂的第一畴，以及包含第二嵌段的第二畴; 在第一区域的至少一部分中从可活化催化剂产生催化剂以产生包含含催化剂的区域和第二区域的结构，所述含催化剂的区域包含第一嵌段和催化剂; 并使金属氧化物前体与含催化剂的区域中的催化剂反应，以制备包含第一嵌段和金属氧化物的含金属氧化物的结构。

公开(公告)号：US20150091137A1

公开(公告)日：2015-04-02

申请号：US14040245

申请日：2013-09-27

Applicant: Micron Technology, Inc.

Inventor： Nicholas Hendricks ,  Adam L. Olson ,  William R. Brown ,  Ho Seop Eom ,  Xue Chen ,  Kaveri Jain ,  Scott Schuldenfrei

IPC: H01L21/027 ,  C08G81/00

CPC classification number: H01L21/0273 ,  B81C1/00031 ,  B81C2201/0149 ,  C08G81/00 ,  C08L53/005 ,  H01L21/02118 ,  H01L21/02175 ,  H01L21/02318 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31058

Abstract: A method of forming nanostructures may include forming a block copolymer composition within a trench in a material on a substrate, wherein the block copolymer composition may comprise a block copolymer material and an activatable catalyst having a higher affinity for a first block of the block copolymer material compared to a second block of the block copolymer material; self-assembling the block copolymer composition into first domains comprising the first block and the activatable catalyst, and second domains comprising the second block; generating catalyst from the activatable catalyst in at least one portion of the first domains to produce a structure comprising catalyst-containing domains and the second domains, the catalyst-containing domains comprising the first block and the catalyst; and reacting a metal oxide precursor with the catalyst in the catalyst-containing domains to produce a metal oxide-containing structure comprising the first block and metal oxide.

Abstract translation: 形成纳米结构的方法可以包括在衬底中的材料中的沟槽内形成嵌段共聚物组合物，其中嵌段共聚物组合物可以包含嵌段共聚物材料和对于嵌段共聚物材料的第一嵌段具有更高亲和力的可活化催化剂 与第二嵌段共聚物材料相比; 将嵌段共聚物组合物自组装成包含第一嵌段和可活化催化剂的第一畴，以及包含第二嵌段的第二畴; 在第一区域的至少一部分中从可活化催化剂产生催化剂以产生包含含催化剂的区域和第二区域的结构，所述含催化剂的区域包含第一嵌段和催化剂; 并使金属氧化物前体与含催化剂的区域中的催化剂反应，以制备包含第一嵌段和金属氧化物的含金属氧化物的结构。

公开(公告)号：US20140353803A1

公开(公告)日：2014-12-04

申请号：US14457658

申请日：2014-08-12

Applicant: Micron Technology, Inc.

Inventor： Adam L. Olson ,  Kaveri Jain ,  Lijing Gou ,  William R. Brown ,  Ho Seop Eom ,  Xue Chen ,  Anton J. deVilliers

IPC: H01L23/52

CPC classification number: H01L23/528 ,  H01L21/0226 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/441 ,  H01L21/467 ,  H01L21/76804 ,  H01L21/76816 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/52 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of forming features are disclosed. One method comprises forming a resist over a pool of acidic or basic material on a substrate structure, selectively exposing the resist to an energy source to form exposed resist portions and non-exposed resist portions, and diffusing acid or base of the acidic or basic material from the pool into proximal portions of the resist. Another method comprises forming a plurality of recesses in a substrate structure. The plurality of recesses are filled with a pool material comprising acid or base. A resist is formed over the pool material and the substrate structure and acid or base is diffused into adjacent portions of the resist. The resist is patterned to form openings in the resist. The openings comprise wider portions distal to the substrate structure and narrower portions proximal to the substrate structure. Additional methods and semiconductor device structures including the features are disclosed.

Abstract translation: 公开了形成特征的方法。 一种方法包括在衬底结构上的酸性或碱性材料池上形成抗蚀剂，选择性地将抗蚀剂暴露于能量源以形成暴露的抗蚀剂部分和未曝光的抗蚀剂部分，以及将酸性或碱性材料的酸或碱扩散 从池中到抗蚀剂的近端部分。 另一种方法包括在衬底结构中形成多个凹陷。 多个凹部填充有包含酸或碱的池材料。 在池材料上形成抗蚀剂，并且衬底结构和酸或碱扩散到抗蚀剂的相邻部分。 抗蚀剂被图案化以在抗蚀剂中形成开口。 开口包括远离衬底结构的较宽部分和靠近衬底结构的较窄部分。 公开了包括这些特征的附加方法和半导体器件结构。