公开(公告)号：US11035048B2

公开(公告)日：2021-06-15

申请号：US15641756

申请日：2017-07-05

Applicant: MacDermid Enthone Inc.

Inventor： John Commander ,  Kyle Whitten ,  Vincent Paneccasio, Jr. ,  Shaopeng Sun ,  Eric Yakobson ,  Jianwen Han ,  Elie Najjar

IPC: C25D3/16 ,  H01L21/768 ,  C25D5/02 ,  C25D7/12 ,  H01L21/288 ,  C25D3/18 ,  C25D7/00

Abstract: Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.