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公开(公告)号：US20230407467A1
公开(公告)日：2023-12-21
申请号：US18242599
申请日：2023-09-06
Applicant: MacDermid Enthone Inc.
Inventor： Richard W. Hurtubise , Eric Yakobson , Shaopeng Sun , Taylor L. Wilkins , Elie H. Najjar , Wenbo Shao
CPC classification number: C23C16/403 , C23C16/02 , C23C14/081 , C23C14/02 , C25D3/00
Abstract: A method of forming a diffusion barrier layer on a dielectric or semiconductor substrate by a wet process. The method includes the steps of treating the dielectric or semiconductor substrate with an aqueous pretreatment solution comprising one or more adsorption promoting ingredients capable of preparing the substrate for deposition of the diffusion barrier layer thereon; and contacting the treated dielectric or semiconductor substrate with a deposition solution comprising manganese compounds and an inorganic pH buffer (optionally, with one or more doping metals) to the diffusion barrier layer thereon, wherein the diffusion barrier layer comprises manganese oxide. Also included is a two-part kit for treating a dielectric or semiconductor substrate to form a diffusion barrier layer thereon.
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公开(公告)号：US20220259724A1
公开(公告)日：2022-08-18
申请号：US17665871
申请日：2022-02-07
Applicant: MacDermid Enthone Inc.
Inventor： Richard W. Hurtubise , Eric Yakobson , Shaopeng Sun , Taylor L. Wilkins , Elie H. Najjar , Wenbo Shao
Abstract: A method of forming a diffusion barrier layer on a dielectric or semiconductor substrate by a wet process. The method includes the steps of treating the dielectric or semiconductor substrate with an aqueous pretreatment solution comprising one or more adsorption promoting ingredients capable of preparing the substrate for deposition of the diffusion barrier layer thereon; and contacting the treated dielectric or semiconductor substrate with a deposition solution comprising manganese compounds and an inorganic pH buffer (optionally, with one or more doping metals) to the diffusion barrier layer thereon, wherein the diffusion barrier layer comprises manganese oxide. Also included is a two-part kit for treating a dielectric or semiconductor substrate to form a diffusion barrier layer thereon.
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公开(公告)号：US20190010624A1
公开(公告)日：2019-01-10
申请号：US15641756
申请日：2017-07-05
Applicant: MacDermid Enthone Inc.
Inventor： John Commander , Kyle Whitten , Vincent Paneccasio, JR. , Shaopeng Sun , Eric Yakobson
IPC: C25D3/16 , H01L21/768 , C25D5/02 , C25D7/12
Abstract: Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.
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Patent Agency Ranking
公开(公告)号：US11035048B2
公开(公告)日：2021-06-15
申请号：US15641756
申请日：2017-07-05
Applicant: MacDermid Enthone Inc.
Inventor： John Commander , Kyle Whitten , Vincent Paneccasio, Jr. , Shaopeng Sun , Eric Yakobson , Jianwen Han , Elie Najjar
IPC: C25D3/16 , H01L21/768 , C25D5/02 , C25D7/12 , H01L21/288 , C25D3/18 , C25D7/00
Abstract: Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.
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公开(公告)号：US12157944B2
公开(公告)日：2024-12-03
申请号：US18242599
申请日：2023-09-06
Applicant: MacDermid Enthone Inc.
Inventor： Richard W. Hurtubise , Eric Yakobson , Shaopeng Sun , Taylor L Wilkins , Elie H. Najjar , Wenbo Shao
Abstract: A method of forming a diffusion barrier layer on a dielectric or semiconductor substrate by a wet process. The method includes the steps of treating the dielectric or semiconductor substrate with an aqueous pretreatment solution comprising one or more adsorption promoting ingredients capable of preparing the substrate for deposition of the diffusion barrier layer thereon; and contacting the treated dielectric or semiconductor substrate with a deposition solution comprising manganese compounds and an inorganic pH buffer (optionally, with one or more doping metals) to the diffusion barrier layer thereon, wherein the diffusion barrier layer comprises manganese oxide. Also included is a two-part kit for treating a dielectric or semiconductor substrate to form a diffusion barrier layer thereon.
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公开(公告)号：US11846018B2
公开(公告)日：2023-12-19
申请号：US17665871
申请日：2022-02-07
Applicant: MacDermid Enthone Inc.
Inventor： Richard W. Hurtubise , Eric Yakobson , Shaopeng Sun , Taylor L. Wilkins , Elie H. Najjar , Wenbo Shao
CPC classification number: C23C16/403 , C23C14/02 , C23C14/081 , C23C16/02 , C25D3/00
Abstract: A method of forming a diffusion barrier layer on a dielectric or semiconductor substrate by a wet process. The method includes the steps of treating the dielectric or semiconductor substrate with an aqueous pretreatment solution comprising one or more adsorption promoting ingredients capable of preparing the substrate for deposition of the diffusion barrier layer thereon; and contacting the treated dielectric or semiconductor substrate with a deposition solution comprising manganese compounds and an inorganic pH buffer (optionally, with one or more doping metals) to the diffusion barrier layer thereon, wherein the diffusion barrier layer comprises manganese oxide. Also included is a two-part kit for treating a dielectric or semiconductor substrate to form a diffusion barrier layer thereon.
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公开(公告)号：US20210332491A1
公开(公告)日：2021-10-28
申请号：US17222058
申请日：2021-04-05
Applicant: MacDermid Enthone Inc.
Inventor： John Commander , Kyle Whitten , Vincent Paneccasio, JR. , Shaopeng Sun , Eric Yakobson , Jianwen Han , Elie Najjar
IPC: C25D3/16 , H01L21/768 , C25D5/02 , C25D7/12 , H01L21/288 , C25D3/18 , C25D7/00
Abstract: Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.
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公开(公告)号：US20220064811A1
公开(公告)日：2022-03-03
申请号：US17416703
申请日：2020-01-31
Applicant: MacDermid Enthone Inc.
Inventor： Eric Yakobson , Shaopeng Sun , Elie Najjar , Thomas Richardson , Vincent Paneccasio, Jr. , Wenbo Shao , Kyle Whitten
IPC: C25D3/18 , H01L21/768 , H01L21/288 , C25D7/12 , C25D5/02 , C25D21/10
Abstract: A nickel electrodeposition composition for via fill or barrier nickel interconnect fabrication comprising: (a) a source of nickel ions; (b) one or more polarizing additives; and (c) one or more depolarizing additives. The nickel electrodeposition composition may include various additives, including suitable acids, surfactants, buffers, and/or stress modifiers to produce bottom-up filling of vias and trenches.
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