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    Cobalt Filling of Interconnects in Microelectronics
    1.
    发明申请
    Cobalt Filling of Interconnects in Microelectronics 有权

    公开(公告)号：US20210222314A1

    公开(公告)日：2021-07-22

    申请号：US17220540

    申请日：2021-04-01

    Applicant: MacDermid Enthone Inc.

    Inventor： John Commander ,  Vincent Paneccasio, JR. ,  Eric Rouya ,  Kyle Whitten ,  Shaopeng Sun ,  Jianwen Han

    IPC: C25D7/12 ,  C25D3/16 ,  C25D3/56

    Abstract: Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising sub-micron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.

    Cobalt filling of interconnects in microelectronics
    3.
    发明授权
    Cobalt filling of interconnects in microelectronics 有权

    公开(公告)号：US11434578B2

    公开(公告)日：2022-09-06

    申请号：US17220540

    申请日：2021-04-01

    Applicant: MacDermid Enthone Inc.

    Inventor： John Commander ,  Vincent Paneccasio, Jr. ,  Eric Rouya ,  Kyle Whitten ,  Shaopeng Sun ,  Jianwen Han

    IPC: C25D3/16 ,  C25D7/12 ,  C25D3/56 ,  C25D5/18

    Abstract: Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising sub-micron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.

    Cobalt filling of interconnects in microelectronics
    7.
    发明授权
    Cobalt filling of interconnects in microelectronics 有权

    公开(公告)号：US10995417B2

    公开(公告)日：2021-05-04

    申请号：US15739314

    申请日：2016-06-30

    Applicant: MacDermid Enthone Inc.

    Inventor： John Commander ,  Vincent Paneccasio, Jr. ,  Eric Rouya ,  Kyle Whitten ,  Shaopeng Sun ,  Jianwen Han

    IPC: C25D3/16 ,  C25D7/12 ,  C25D3/56 ,  C25D5/18

    Abstract: Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising submicron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.

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