公开(公告)号：US09336878B2

公开(公告)日：2016-05-10

申请号：US14566453

申请日：2014-12-10

Applicant: Macronix International Co., Ltd.

Inventor： Win San Khwa ,  Chao-I Wu ,  Tzu-Hsiang Su ,  Hsiang-Pang Li

IPC: G11C13/00 ,  G11C11/56

CPC classification number: G11C13/0097 ,  G11C11/5614 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0021 ,  G11C13/0033 ,  G11C13/0069 ,  G11C29/50008 ,  G11C2213/79 ,  G11C2213/82

Abstract: A first memory cell including a phase change material. The first memory cell is programmable to store one data value of a plurality of data values. The plurality of data values are represented by a plurality of non-overlapping ranges of resistance of the first memory cell. At least one testing pulse is applied to the first memory cell to establish a cell resistance of the first memory cell in an intermediate range of resistance, the intermediate range of resistance in between first and second adjacent ranges in the plurality of non-overlapping ranges of resistance representing the plurality of data values. After applying the at least one testing pulse to the first memory cell, it is determined whether to apply at least one healing pulse to repair the first memory cell, depending on relative values of (i) the cell resistance in the intermediate range of resistance and (ii) a reference resistance in the intermediate range of resistance.

Abstract translation: 包括相变材料的第一存储单元。 第一存储器单元可编程以存储多个数据值的一个数据值。 多个数据值由第一存储单元的多个非重叠的电阻范围表示。 至少一个测试脉冲被施加到第一存储器单元，以在电阻的中间范围内建立第一存储器单元的单元电阻，在多个非重叠范​​围内的第一和第二相邻范围内的电阻的中间范围 表示多个数据值的电阻。 在将至少一个测试脉冲施加到第一存储器单元之后，根据（i）电阻中间范围内的电池电阻的相对值，确定是否施加至少一个愈合脉冲来修复第一存储器单元，以及 （ii）中间电阻范围内的参考电阻。

公开(公告)号：US20150371704A1

公开(公告)日：2015-12-24

申请号：US14566453

申请日：2014-12-10

Applicant: Macronix International Co., Ltd.

Inventor： Win San Khwa ,  Chao-I Wu ,  Tzu-Hsiang Su ,  Hsiang-Pang Li

IPC: G11C13/00

CPC classification number: G11C13/0097 ,  G11C11/5614 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0021 ,  G11C13/0033 ,  G11C13/0069 ,  G11C29/50008 ,  G11C2213/79 ,  G11C2213/82

Abstract: A first memory cell including a phase change material. The first memory cell is programmable to store one data value of a plurality of data values. The plurality of data values are represented by a plurality of non-overlapping ranges of resistance of the first memory cell. At least one testing pulse is applied to the first memory cell to establish a cell resistance of the first memory cell in an intermediate range of resistance, the intermediate range of resistance in between first and second adjacent ranges in the plurality of non-overlapping ranges of resistance representing the plurality of data values. After applying the at least one testing pulse to the first memory cell, it is determined whether to apply at least one healing pulse to repair the first memory cell, depending on relative values of (i) the cell resistance in the intermediate range of resistance and (ii) a reference resistance in the intermediate range of resistance.

Abstract translation: 包括相变材料的第一存储单元。 第一存储器单元可编程以存储多个数据值的一个数据值。 多个数据值由第一存储单元的多个非重叠的电阻范围表示。 至少一个测试脉冲被施加到第一存储器单元，以在电阻的中间范围内建立第一存储器单元的单元电阻，在多个非重叠范​​围内的第一和第二相邻范围内的电阻的中间范围 表示多个数据值的电阻。 在将至少一个测试脉冲施加到第一存储器单元之后，根据（i）电阻中间范围内的电池电阻的相对值，确定是否施加至少一个愈合脉冲来修复第一存储器单元，以及 （ii）中间电阻范围内的参考电阻。