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公开(公告)号：US20090108731A1
公开(公告)日：2009-04-30
申请号：US11996736
申请日：2007-03-15
申请人： Koji Nitta , Shinji Inazawa , Akihisa Hosoe , Kazuo Yamazaki , Hisashi Tokuda
发明人： Koji Nitta , Shinji Inazawa , Akihisa Hosoe , Kazuo Yamazaki , Hisashi Tokuda
IPC分类号： H01J1/30
CPC分类号： H01J61/0675
摘要： A cold-cathode fluorescent lamp having high brightness with long life and an electrode for this lamp are offered. At least one part of the electrode surface is formed by using one material selected from the group consisting of rhodium, palladium, and alloys of these. For example, a surface layer made of the foregoing material is formed on a base. To increase the bonding strength between the surface layer and the base, a bonding layer made of gold or gold alloy is formed on the base. Because a metal such as rhodium is resistant to alloying with mercury and has a high melting point, a cold-cathode fluorescent lamp provided with an electrode made of the foregoing metal can suppress not only the consumption of the mercury due to the formation of an amalgam but also the reduction in brightness due to insufficient discharging. Furthermore, because the lamp can suppress the consumption of the mercury and electrode, the lamp has long life.
摘要翻译： 提供具有高亮度和长寿命的冷阴极荧光灯和用于该灯的电极。 电极表面的至少一部分通过使用选自铑，钯及其合金中的一种材料形成。 例如，在基材上形成由上述材料制成的表面层。 为了增加表面层与基体的接合强度，在基材上形成由金或金合金构成的接合层。 由于诸如铑的金属对汞的合金化具有高熔点，所以设置有由上述金属制成的电极的冷阴极荧光灯不仅可以抑制由汞齐形成的汞的消耗 而且由于放电不足导致的亮度降低。 此外，因为灯可以抑制水银和电极的消耗，所以灯寿命长。
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公开(公告)号：US07375037B2
公开(公告)日：2008-05-20
申请号：US10639465
申请日：2003-08-13
IPC分类号： H01L21/302
CPC分类号： H01L21/02071 , H01L21/2807 , H01L21/28123 , H01L21/32137 , H01L21/823842 , H01L21/82385
摘要： To improve the shape of a gate electrode having SiGe, after patterning a gate electrode 15G having an SiGe layer 15b by a dry etching process, a plasma processing (postprocessing) is carried out in an atmosphere of an Ar/CHF3 gas. Thereby, the gate electrode 15G can be formed without causing side etching at two side faces (SiGe layer 15b) of the gate electrode 15G.
摘要翻译： 为了改善具有SiGe的栅电极的形状，在通过干蚀刻工艺对具有SiGe层15b的栅电极15G进行图案化之后，等离子体处理（后处理）在Ar / CHF 3气体。 由此，可以在栅电极15G的两个侧面（SiGe层15b）处不形成侧蚀刻而形成栅电极15G。
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公开(公告)号：US06956357B2
公开(公告)日：2005-10-18
申请号：US11102655
申请日：2005-04-11
申请人： Tamiji Nagai , Kazuo Yamazaki , Tadahisa Yamamoto
发明人： Tamiji Nagai , Kazuo Yamazaki , Tadahisa Yamamoto
CPC分类号： H02J7/0055
摘要： In the case of charging by a charging apparatus having a plurality of input terminals to which external power sources for charging a secondary battery are inputted, it is prevented that a current of the inputted power source is outputted to the outside from the other input terminals for charging which are not used. If there are inputs from a plurality of input terminals, the input power sources are controlled so that the battery is optimally charged. pnp-type transistors Q1 and Q2 are arranged between two input terminals of a terminal 11 for an external power adaptor and a terminal 12 for a holder and a secondary battery E1, respectively. When a control IC 13 detects an input power voltage of one of the transistors, the transistor on the detected side is turned on. If the control IC 13 detects both input power voltages, a priority is allocated under predetermined conditions and the secondary battery E1 is charged by the power source of the higher priority.
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公开(公告)号：US20050189925A1
公开(公告)日：2005-09-01
申请号：US11102655
申请日：2005-04-11
申请人： Tamiji Nagai , Kazuo Yamazaki , Tadahisa Yamamoto
发明人： Tamiji Nagai , Kazuo Yamazaki , Tadahisa Yamamoto
CPC分类号： H02J7/0055
摘要： In the case of charging by a charging apparatus having a plurality of input terminals to which external power sources for charging a secondary battery are inputted, it is prevented that a current of the inputted power source is outputted to the outside from the other input terminals for charging which are not used. If there are inputs from a plurality of input terminals, the input power sources are controlled so that the battery is optimally charged. pnp-type transistors Q1 and Q2 are arranged between two input terminals of a terminal 11 for an external power adaptor and a terminal 12 for a holder and a secondary battery E1, respectively. When a control IC 13 detects an input power voltage of one of the transistors, the transistor on the detected side is turned on. If the control IC 13 detects both input power voltages, a priority is allocated under predetermined conditions and the secondary battery E1 is charged by the power source of the higher priority.
摘要翻译： 在具有输入了用于对二次电池充电的外部电源的多个输入端子的充电装置进行充电的情况下，防止输入电源的电流从其他输入端子输出到外部， 充电不使用。 如果存在来自多个输入端子的输入，则控制输入电源以使电池被最佳充电。 pnp型晶体管Q 1和Q 2分别布置在用于外部电源适配器的端子11的两个输入端子和用于保持器的端子12和二次电池E 1之间。 当控制IC13检测到晶体管中的一个的输入电源电压时，检测侧的晶体管导通。 如果控制IC13检测到两个输入电源电压，则在预定条件下分配优先级，并且通过较高优先级的电源对二次电池E 1进行充电。
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公开(公告)号：US06662073B1
公开(公告)日：2003-12-09
申请号：US10049628
申请日：2002-02-22
申请人： Makoto Fujishima , Yasushi Fukaya , Kazuo Yamazaki
发明人： Makoto Fujishima , Yasushi Fukaya , Kazuo Yamazaki
IPC分类号： G05B1940
CPC分类号： G05B19/4069 , G05B2219/34048 , G05B2219/35346 , G05B2219/36252 , G05B2219/37534 , G05B2219/41121
摘要： A machining simulation is performed on a graphic data basis prior to machining. Machining simulation means (17) simulates a forced-vibration frequency and/or a load variation frequency occurring due to interrupted cutting on the basis of machining information, and numerical control command generating means (18) generates a numerical control command on the basis of the frequencies obtained from the machining simulation means (17). A spindle rotation speed can be reflected on the actual machining and the generation of a machining program under conditions optimum for the actual machining. Therefore, the interrupted-cutting forced-vibration frequency and/or load variation frequency, or harmonic frequencies thereof which are integral multiples thereof are prevented from being close to the natural frequency of a machine, a tool, a jig or a workpiece. Thus, chattering due to resonance can be prevented, thereby improving a surface accuracy.
摘要翻译： 在加工之前，以图形数据为基础进行加工仿真。 加工模拟装置（17）基于加工信息模拟由于中断切削而产生的强制振动频率和/或载荷变化频率，并且数值控制指令生成装置（18）基于加工信息生成数值控制命令 从加工仿真装置（17）获得的频率。 主轴转速可以在实际加工中反映出来，并且可以在实际加工条件最佳的条件下生成加工程序。 因此，防止作为其整数倍的中断切削强制振动频率和/或负载变化频率或其谐波频率接近机器，工具，夹具或工件的固有频率。 因此，可以防止由共振引起的抖动，从而提高表面精度。
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16.发明授权Fabrication method for semiconductor integrated circuit devices and semiconductor integrated circuit device 失效半导体集成电路器件和半导体集成电路器件的制造方法公开(公告)号：US06633072B2
公开(公告)日：2003-10-14
申请号：US09811589
申请日：2001-03-20
IPC分类号： H01L2978
CPC分类号： H01L21/02071 , H01L21/2807 , H01L21/28123 , H01L21/32137 , H01L21/823842 , H01L21/82385
摘要： To improve the shape of a gate electrode having SiGe, after patterning a gate electrode 15G having an SiGe layer 15b by a dry etching process, a plasma processing (postprocessing) is carried out in an atmosphere of an Ar/CHF3 gas. Thereby, the gate electrode 15G can be formed without causing side etching at two side faces (SiGe layer 15b) of the gate electrode 15G.
摘要翻译： 为了改善具有SiGe的栅电极的形状，在图案化具有SiGe层
15 的栅电极之后， PDAT> b ，在Ar / CHF <3>气体气氛中进行等离子体处理（后处理）。 因此，可以形成栅极 15 G，而不会在两个侧面（SiGe层 15 b ）栅极电极 15 G。 -
公开(公告)号：US06591156B1
公开(公告)日：2003-07-08
申请号：US09622539
申请日：2000-08-18
IPC分类号： G06F1900
CPC分类号： G05B19/40937 , G05B2219/35528 , G05B2219/36103 , G05B2219/36284 , G05B2219/36307 , Y02P90/265
摘要： An apparatus and method for generating numerical control information for numerically controlling machine tools. Contents of corrective editing or correction to numerical control information by a processing operator is written and stored in a processing method database as processing knowledge of the processing engineer. When a programmer generates new numerical control information, a suitable processing method can be used from the processing method database. The knowledge included processing conditions by the processing operator. The information in the processing method database is updated at each and every processing.
摘要翻译： 一种用于产生数控机床数值控制信息的装置和方法。 作为处理工程师的处理知识，将处理操作者对数控信息进行纠正编辑或校正的内容编写并存储在处理方法数据库中。 当程序员产生新的数字控制信息时，可以从处理方法数据库中使用合适的处理方法。 知识包括处理操作员的处理条件。 处理方法数据库中的信息在每个处理中被更新。
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18.发明授权Automatic washing device for a workpiece to be measured and automatic production system provided with the same 失效自动清洗装置用于要测量的工件和自动生产系统提供的相同公开(公告)号：US06568407B1
公开(公告)日：2003-05-27
申请号：US09529791
申请日：2000-05-15
IPC分类号： G08B302
CPC分类号： G01B21/20 , B08B3/02 , B23Q11/0057 , G01B21/00 , Y02P70/171
摘要： An automatic production system includes an automatic washing device usable to wash off swarf left on a workpiece by an NC machine tool. The automatic washing device is used before measuring a portion of a workpiece using a three dimensional measuring device controlled by a measuring part program controlling the three dimensional measuring device. When automating an operation of the washing device, a washing program is produced based on the a measuring part program controlling the three dimensional measuring device to be able to efficiently wash a minimal area of the work piece encompassing the portion of the workpiece to be measured.
摘要翻译： 一种自动生产系统包括可用于通过NC机床将工件上剩下的切屑清洗掉的自动清洗装置。 在使用由控制三维测量装置的测量部件程序控制的三维测量装置测量工件的一部分之前使用自动清洗装置。 当自动化洗涤装置的操作时，基于控制三维测量装置的测量部件程序产生洗涤程序，以能够有效地清洗包围待测量工件的部分的工件的最小面积。
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公开(公告)号：US06502007B1
公开(公告)日：2002-12-31
申请号：US09530019
申请日：2000-05-15
IPC分类号： G05B194093
CPC分类号： G05B19/40937 , Y02P90/265
摘要： In NC machining in which machining control is performed through An NC program, machining conditions at the time of actual machining are reflected in the NC program. At this time, there are two types of modes comprising an analytic storage mode in which actual machining conditions are reflected in the NC program as they are and an optimization mode in which optimization processing applies to the actual machining conditions and the result is reflected in the NC machining program, and either of them is selected according to conditions.
摘要翻译： 在通过NC程序进行加工控制的NC加工中，实际加工时的加工条件反映在NC程序中。 此时，存在两种类型的模式，包括其中实际加工条件反映在NC程序中的分析存储模式以及优化模式，其中优化处理适用于实际加工条件，并且结果反映在 NC加工程序，并根据条件选择其中任何一种。
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20.发明授权Fabrication method for semiconductor integrated circuit devices and semiconductor integrated circuit device 失效半导体集成电路器件和半导体集成电路器件的制造方法公开(公告)号：US06479392B2
公开(公告)日：2002-11-12
申请号：US09810577
申请日：2001-03-19
IPC分类号： H01L2976
CPC分类号： H01L21/02071 , H01L21/2807 , H01L21/28123 , H01L21/32137 , H01L21/823842 , H01L21/82385
摘要： To improve the shape of a gate electrode having SiGe, after patterning a gate electrode 15G having an SiGe layer 15b by a dry etching process, a plasma processing (postprocessing) is carried out in an atmosphere of an Ar/CHF3 gas. Thereby, the gate electrode 15G can be formed without causing side etching at two side faces (SiGe layer 15b) of the gate electrode 15G.
摘要翻译： 为了改善具有SiGe的栅电极的形状，在通过干蚀刻工艺对具有SiGe层15b的栅电极15G进行图案化之后，在Ar / CHF 3气体的气氛中进行等离子体处理（后处理）。 由此，可以在栅电极15G的两个侧面（SiGe层15b）不形成侧蚀而形成栅电极15G。
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