公开(公告)号：US11424322B2

公开(公告)日：2022-08-23

申请号：US16784907

申请日：2020-02-07

申请人： Tatsuji Nagaoka ,  Hiroyuki Nishinaka ,  Masahiro Yoshimoto

发明人： Tatsuji Nagaoka ,  Hiroyuki Nishinaka ,  Masahiro Yoshimoto

IPC分类号： H01L29/06 ,  H01L29/24 ,  H01L21/784 ,  H01L29/872 ,  H01L29/861

摘要： A semiconductor device may include: a gallium oxide substrate including a first side surface constituted of a (100) plane, a second side surface constituted of a plane other than the (100) plane, and an upper surface; and an electrode in contact with the upper surface, in which the gallium oxide substrate may include: a diode interface constituted of a pn interface or a Schottky interface; and an n-type drift region connected to the electrode via the diode interface, and a shortest distance between the first side surface and the diode interface is shorter than a shortest distance between the second side surface and the diode interface.

公开(公告)号：US11270882B2

公开(公告)日：2022-03-08

申请号：US16741060

申请日：2020-01-13

申请人： Tatsuji Nagaoka ,  Hiroyuki Nishinaka ,  Daisuke Tahara ,  Masahiro Yoshimoto

发明人： Tatsuji Nagaoka ,  Hiroyuki Nishinaka ,  Daisuke Tahara ,  Masahiro Yoshimoto

IPC分类号： H01L21/02 ,  B05B17/06

摘要： A film formation apparatus is configured to supply mist of a solution to a surface of a substrate so as to epitaxially grow a film on the surface of the substrate. The film formation apparatus may be provided with: a furnace configured to house and heat the substrate; a reservoir configured to store the solution; a heater configured to heat the solution in the reservoir; an ultrasonic transducer configured to apply ultrasound to the solution in the reservoir so as to generate the mist of the solution in the reservoir; and a mist supply path configured to carry the mist from the reservoir to the furnace.

公开(公告)号：US07855385B2

公开(公告)日：2010-12-21

申请号：US12152016

申请日：2008-05-12

申请人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya ,  Masahiro Yoshimoto ,  Hiroyuki Kinoshita

发明人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya ,  Masahiro Yoshimoto ,  Hiroyuki Kinoshita

IPC分类号： H01L31/0312

CPC分类号： B23K35/262 ,  C22C13/00 ,  H01B1/026

摘要： The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5×1017 cm−3; donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities. The present invention discloses a semiconductor device, comprising: a SiC fluorescent layer having acceptor impurities that are in a concentration greater than 5×1017 cm−3 and donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities; and a light emission layer that is layered on the SiC fluorescent layer and emits excitation light for the SiC fluorescent layer.

摘要翻译： 本发明公开了一种SiC晶体，其包含：浓度大于5×1017cm-3的受主杂质; 供体杂质浓度小于1×1019 cm-3，大于受主杂质的浓度。 本发明公开了一种半导体器件，包括：具有浓度大于5×1017cm-3的受主杂质的SiC荧光层和浓度小于1×1019 cm -3并且大于 受体杂质浓度; 以及层叠在SiC荧光层上并发射用于SiC荧光层的激发光的发光层。

公开(公告)号：US4435202A

公开(公告)日：1984-03-06

申请号：US363023

申请日：1982-03-29

申请人： Masuo Koizumi ,  Norio Shirakawa ,  Hiromi Tomioka ,  Masaki Takeuchi ,  Masanori Okada ,  Masahiro Yoshimoto ,  Yasushi Murakami ,  Yoshitaka Iwane

发明人： Masuo Koizumi ,  Norio Shirakawa ,  Hiromi Tomioka ,  Masaki Takeuchi ,  Masanori Okada ,  Masahiro Yoshimoto ,  Yasushi Murakami ,  Yoshitaka Iwane

IPC分类号： A01N43/40 ,  C07D213/81

CPC分类号： C07D213/81 ,  A01N43/40

摘要： A plant growth regulator containing as an active ingredient one or more compounds represented by the formula ##STR1## wherein R, X, Y and Z are defined in the specification is disclosed. The plant growth regulator is effective for a wide variety of plants, particularly for grassy plants. In addition to such activity, the regulator of this invention acts on plants to thicken the foliage and to aid health growth without causing substantial phytotoxicity.

摘要翻译： 公开了包含作为活性成分的一种或多种由式“IMAGE”表示的化合物的植物生长调节剂，其中R，X，Y和Z在说明书中定义。 植物生长调节剂对于各种各样的植物，特别是对于草本植物而言是有效的。 除了这种活动之外，本发明的调节剂还起作用以增加叶子的厚度并且帮助健康生长而不会引起大量的植物毒性。

公开(公告)号：US20050255713A1

公开(公告)日：2005-11-17

申请号：US10520815

申请日：2003-07-04

申请人： Kohshi Taguchi ,  Masahiro Yoshimoto

发明人： Kohshi Taguchi ,  Masahiro Yoshimoto

IPC分类号： C23C16/34 ,  C23C16/452 ,  H01L21/318 ,  C23C16/00 ,  H05H1/24

CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/452 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/3185

摘要： A method for forming a silicon nitride film which comprises heating a substrate (2) placed in the inner space (3) of a chamber (4) to a desired temperature, feeding a hexamethyl disilazane gas and a gas containing active species formed by the plasma excitation of an N2 gas to the chamber (4) holding the substrate (2), to thereby deposit a reaction product formed by the reaction of the hexaalkyldisilazan gas with the above active species and form the silicon nitride film. The method allows the formation of a silicon nitride film being reduced in the contents of carbon and hydrogen with safety and good efficiency.

摘要翻译： 一种形成氮化硅膜的方法，其包括将放置在室（4）的内部空间（3）中的衬底（2）加热到所需温度，将六甲基二硅氮烷气体和包含由等离子体形成的活性物质的气体 将N 2 O 2气体激发到保持基板（2）的室（4），从而沉积由六烷基二硅氮烷气体与上述活性物质反应形成的反应产物，并形成氮化硅 电影。 该方法允许形成氮化硅膜，其安全性和效率降低了碳和氢的含量。

公开(公告)号：US20050046517A1

公开(公告)日：2005-03-03

申请号：US10926289

申请日：2004-08-26

申请人： Masahiro Yoshimoto ,  Kuniaki Kiyosue ,  Nobuaki Nagai ,  Tokuji Nishino ,  Shinichirou Kaneko

发明人： Masahiro Yoshimoto ,  Kuniaki Kiyosue ,  Nobuaki Nagai ,  Tokuji Nishino ,  Shinichirou Kaneko

IPC分类号： H01F17/00 ,  H01F17/04 ,  H03H1/00 ,  H03H7/01

CPC分类号： H01F17/045 ,  H01F17/0033 ,  H03H2001/005

摘要： An electronic component of the invention has: a substrate; first to third terminal portions disposed on the substrate; and at least one spiral conductor portion disposed between the first and second terminal portions. The third terminal portion is not electrically connected to other portions of the substrate, and the first and second terminal portions are electrically connected to or disconnected from each other. In the electronic component, the number of production steps is smaller, the cost is lower, and a more highly accurate inductor component is realized as compared with a laminated electronic component in which emphasis is put on increase of the capacitor component. It is possible to realize an electronic component having accurate band- or low-pass filter characteristics.

摘要翻译： 本发明的电子部件具有：基板; 设置在基板上的第一至第三端子部分; 以及设置在第一和第二端子部分之间的至少一个螺旋导体部分。 第三端子部分不与衬底的其它部分电连接，并且第一和第二端子部分彼此电连接或断开。 在电子部件中，与层叠电子部件相比，制造步骤的数量更少，成本更低，并且与重视电容器部件的增加的层叠电子部件相比，实现更高精度的电感器部件。 可以实现具有精确的带通或低通滤波特性的电子部件。

公开(公告)号：US4377407A

公开(公告)日：1983-03-22

申请号：US306582

申请日：1981-09-28

申请人： Norio Shirakawa ,  Hiromi Tomioka ,  Masuo Koizumi ,  Masaki Takeuchi ,  Hiroshi Sugiyama ,  Masanori Okada ,  Masahiro Yoshimoto ,  Yoshitaka Iwane ,  Yasushi Murakami

发明人： Norio Shirakawa ,  Hiromi Tomioka ,  Masuo Koizumi ,  Masaki Takeuchi ,  Hiroshi Sugiyama ,  Masanori Okada ,  Masahiro Yoshimoto ,  Yoshitaka Iwane ,  Yasushi Murakami

IPC分类号： C07D213/00 ,  A01N43/40 ,  C07D213/81

CPC分类号： C07D213/81 ,  A01N43/40

摘要： Isonicotinanilide derivatives of the formula ##STR1## (wherein R.sub.1 is a hydrogen atom or a lower alkyl group; X is a halogen atom or methyl; n is an integer of from 0 to 2; R.sub.2 is phenyl, halo-substituted phenyl or a lower alkyl group; and Q is ##STR2## provided that Q is ##STR3## or --CH.sub.2 --when R.sub.2 is phenyl or halo-substituted phenyl, and Q is ##STR4## when R.sub.2 is a lower alkyl group) a process for preparing the same and a plant growth regulator containing the same are disclosed. The derivatives of the formula above have good activity for regulating the growth of various plants, especially of grassy plants.

摘要翻译： 式（I）的异烟酰苯胺衍生物（其中R1是氢原子或低级烷基; X是卤素原子或甲基; n是0-2的整数; R2是苯基，卤素取代的苯基 或低级烷基;且Q为，条件是当R 2为苯基或卤素取代的苯基时Q为“或”-CH 2 - ，当R 2为低级烷基时，Q为“ 公开了其制备方法和含有该植物生长调节剂的植物生长调节剂。 上述配方的衍生物具有良好的调节各种植物，特别是草本植物生长的活性。

公开(公告)号：US11534791B2

公开(公告)日：2022-12-27

申请号：US15931968

申请日：2020-05-14

申请人： Tatsuji Nagaoka ,  Hiroyuki Nishinaka ,  Masahiro Yoshimoto

发明人： Tatsuji Nagaoka ,  Hiroyuki Nishinaka ,  Masahiro Yoshimoto

IPC分类号： B05B17/06 ,  B05B7/00 ,  H01L21/02

摘要： A mist generator may include a reservoir storing a solution, a plurality of ultrasonic vibrators, a mist delivery path, and a mist collector. The plurality of ultrasonic vibrators may be disposed under the reservoir and configured to apply ultrasonic vibration to the solution stored in the reservoir to generate mist of the solution in the reservoir. The mist delivery path may be configured to deliver the mist from an inside of the reservoir to an outside of the reservoir. The mist collector may be disposed above the solution in the reservoir, wherein an upper end of the mist collector may be connected to an upstream end of the mist delivery path, a lower end of the mist collector may include an opening, and a width of the mist collector may increase from the upper end toward the opening. The plurality of ultrasonic vibrators may be located directly under the opening.

公开(公告)号：US11443944B2

公开(公告)日：2022-09-13

申请号：US16859160

申请日：2020-04-27

申请人： Tatsuji Nagaoka ,  Hiroyuki Nishinaka ,  Masahiro Yoshimoto ,  Daisuke Tahara

发明人： Tatsuji Nagaoka ,  Hiroyuki Nishinaka ,  Masahiro Yoshimoto ,  Daisuke Tahara

IPC分类号： H01L21/16 ,  H01L21/02

摘要： A method of growing semiconductor layers may include: growing a first semiconductor layer on a surface of a substrate at which a crystal layer is exposed, wherein the first semiconductor layer is different from the crystal layer in at least one of a material and a crystal structure; cutting the first semiconductor layer such that a cut surface of the first semiconductor layer extends from a front surface of the first semiconductor layer to a rear surface of the first semiconductor layer; and growing a second semiconductor layer on the cut surface of the first semiconductor layer, wherein the second semiconductor layer has a material and a crystal structure that are same as those of the first semiconductor layer.

公开(公告)号：US07936792B2

公开(公告)日：2011-05-03

申请号：US11063196

申请日：2005-02-22

申请人： Masahiro Yoshimoto

发明人： Masahiro Yoshimoto

IPC分类号： H04J3/06

CPC分类号： H04L25/40 ,  H04L25/38

摘要： The present invention relates to serial asynchronous transmission of data of fixed length in which a start bit and a stop bit are inserted at the head and tail, respectively, of the data. The insertion of a fixed bit having a predetermined logical value every predetermined number of bits of the data allows an idle state period to be reduced up to the predetermined number of bits plus 1 bit, resulting in considerable improvement in transmission efficiency.

摘要翻译： 本发明涉及固定长度的数据的串行异步传输，其中起始位和停止位分别插入数据的头部和尾部。 每隔预定数量的位数插入具有预定逻辑值的固定位允许将空闲状态周期减少到预定位数加上1位，导致传输效率显着提高。