摘要:
A semiconductor memory device has a SRAM memory cell comprising: a first inverter including a first nMOS transistor and a first pMOS transistor; a second inverter including a second nMOS transistor and a second pMOS transistor; a third nMOS transistor; and a fourth nMOS transistor, wherein a first diffusion region forming the first and third nMOS transistors and a second diffusion region forming the second and fourth nMOS transistors, respectively, are arranged in linear shapes without having any bent part, and driving capabilities of the first and second nMOS transistors are higher than those of the third and fourth nMOS transistors.
摘要:
A power-saving network unit, which is connected to a network made up of a plurality of power-saving network units, includes: network monitoring means; network information memory; power-saving mode setting means; peripheral I/O interface; and digital processor. The network monitoring means monitors a topology of the network, or the interconnection relationship among the power-saving network units. Every time the network has been modified, the network monitoring means stores the modified network topology on the network information memory. The power-saving mode setting means receives the network information stored on the network information memory. If the power-saving network unit is a master or relay node in the network, then the power-saving mode setting means locks the peripheral I/O interface and digital processor of the power-saving network unit to the normal operation mode and prohibits these sections from entering the power-saving mode.
摘要:
A variable delay circuit includes a plurality of delay circuits for delaying an input signal; and a selection circuit for selecting an output from one of the plurality of delay circuits in accordance with a selection signal. The plurality of delay circuits include a first delay circuit for delaying the input signal by a first delay time period and a second delay circuit for delaying the input signal by a second delay time period which is longer than the first delay time period. The difference between the first delay time period and the second delay time period is shorter than a minimum delay time period which is allowed to be set in the first delay circuit.
摘要:
The level of a differential signal is determined such that a system, utilizing the level determined, can operate stably enough even if the intermediate potential of the signal changes. A comparator receives, as differential input, a differential signal to be transmitted. During a level determination interval, a sampler/level determiner samples the output of the comparator a number of times, and outputs a most frequently sampled value as the level of the differential signal.
摘要:
A signal transfer method for transferring a multi-bit signal over a transfer path which is allocated to one bit includes the steps of: respectively assigning a plurality of parameters for a plurality of bits so that a value representing “0” or a value representing “1” is set to each of the plurality of parameters in accordance with a value of a corresponding one of the plurality of bits; outputting an electric signal to the transfer path, the electric signal expressing a combination of the plurality of parameters having the values as set in the assigning step; receiving the electric signal from the transfer path and extracting the plurality of parameters from the electric signal; and detecting the respective values of the plurality of parameters.
摘要:
The semiconductor device of this invention includes: an array section including a plurality of circuit blocks; a leakage current cutoff section for cutting off a leakage current occurring in at least one of the plurality of circuit blocks in the array section; and a control section for controlling the leakage current cutoff section in accordance with leakage current cutoff information.
摘要:
A system of the type including a plurality of circuit blocks is provided with an operation timing controller for controlling the operation timing of these circuit blocks by supplying associated operation control signals thereto. The operation timing controller includes a memory for memorizing respective times when a peak current state arises in these circuit blocks, thereby controlling the timing of the operation control signals in accordance with the memorized times when the peak current state arises. As a result, coincident switching noise can be suppressed no matter when the peak current state arises in these circuit blocks.
摘要:
Image data is transmitted from a memory to a CPU (central processing unit). A transmission circuit of the memory receives an 8-bit source parallel signal, makes reference to transmission histories or to transmission predictions to generate a 2-bit coded parallel signal from the source parallel signal, and sends a serial signal as a result of converting the coded parallel signal, together with a flag signal indicative of the presence of an encoding. If the source parallel signal remains unchanged, the coded parallel signal is made to indicate 00 so that the bit transition probability of the serial signal is reduced. A reception circuit of the CPU receives the serial and flag signals and restores the 8-bit source parallel signal on the basis of reception histories or on the basis of reception predictions. If the transmission circuit fails in performing an encoding, then a serial signal as a result of directly converting the source parallel signal is sent together with a flag signal indicative of the absence of an encoding.
摘要:
A driver circuit which drives a signal line includes a first output section for outputting a reference voltage potential to the signal line during a first period and a second output section for outputting one of a first information voltage potential and a second information voltage potential in accordance with an input signal during a second period.
摘要:
A memory cell includes a first inverter and a second inverter connected with each other through the output node of one of the inverters and the input node of the other inverter, and first and second transistors. Each of the transistors connected with a word line at its gate electrode is interposed between one of a bit line pair and each memory node. This data holding circuit includes an element for increasing a memory cell supply potential for driving the pair of inverters to be higher than a supply potential applied to peripheral circuits, or an element for decreasing a ground voltage for driving the pair of inverters to be lower than a ground voltage applied to the peripheral circuits.