摘要:
A driver circuit which drives a signal line includes a first output section for outputting a reference voltage potential to the signal line during a first period and a second output section for outputting one of a first information voltage potential and a second information voltage potential in accordance with an input signal during a second period.
摘要:
N-piece redundant address comparing circuits are individually composed of impedance converting circuits, so that information using redundancy is transmitted as an impedance value. Consequently, even though the N becomes larger as the capacity of a memory becomes larger, a signal line having large capacitance and the node of a redundant judging circuit are not charged or discharged. A high-speed operation can be realized without being affected by the capacitance of the signal line or by the capacitance of the node of the redundant judging circuit.
摘要:
The semiconductor device of this invention includes: an array section including a plurality of circuit blocks; a leakage current cutoff section for cutting off a leakage current occurring in at least one of the plurality of circuit blocks in the array section; and a control section for controlling the leakage current cutoff section in accordance with leakage current cutoff information.
摘要:
A memory cell includes a first inverter and a second inverter connected with each other through the output node of one of the inverters and the input node of the other inverter, and first and second transistors. Each of the transistors connected with a word line at its gate electrode is interposed between one of a bit line pair and each memory node. This data holding circuit includes an element for increasing a memory cell supply potential for driving the pair of inverters to be higher than a supply potential applied to peripheral circuits, or an element for decreasing a ground voltage for driving the pair of inverters to be lower than a ground voltage applied to the peripheral circuits.
摘要:
A semiconductor device includes: a transmitting section; and a receiving section, wherein the transmitting section and the receiving section are connected to each other through a bus, the transmitting section includes an encoding section for encoding data including a plurality of bits to produce bit-position information which indicates a position of at least one bit selected from the plurality of bits included in the data, and an output section for outputting the bit-position information onto the bus, and the receiving section includes an input section for receiving the bit-position information from the bus, and a decoding section for decoding the bit-position information to produce the data.
摘要:
A semiconductor memory of the present invention includes: a plurality of memory cells; a pair of local bit lines connected to the plurality of memory cells; a local sense amplifier for amplifying a potential difference between the pair of local bit lines; a pair of global bit lines electrically connected to the pair of local bit lines through a switch; and a global sense amplifier for amplifying a potential difference between the pair of global bit lines, wherein the local sense amplifier includes a plurality of transistors, each of the plurality of transistors included in the local sense amplifier is a transistor of a first conductivity type, and the global sense amplifier includes a transistor of a second conductivity type different from the first conductivity type.
摘要:
The semiconductor device of this invention includes: an array section including a plurality of circuit blocks; a leakage current cutoff section for cutting off a leakage current occurring in at least one of the plurality of circuit blocks in the array section; and a control section for controlling the leakage current cutoff section in accordance with leakage current cutoff information.
摘要:
A current problem is that when a DRAM is to be accessed through a data bus, the DRAM is accessed independently of a bank, a row address, etc., and therefore, is inefficient. To solve this problem, an address bus and a data bus are connected to a main memory part independently of each other, a temporary memory part for holding a plurality of addresses in advance is disposed on the address bus side and holds addresses for every access to the main memory part regardless of transfer of data, thereby pipelining address inputting cycles. Further, for the purpose of an effective operation of the main memory part, using the addresses which are held, the addresses are rearranged in such a manner that addresses with the same row addresses become continuous to each other, or when there are not addresses with the same row addresses, addresses different banks from each other become continuous to each other, and the memory is thereafter accessed. This reduces the number of precharges, shortens a standby period which is necessary for a precharge, and realizes accessing while reducing a wasteful use of time.
摘要:
A power-saving network unit, which is connected to a network made up of a plurality of power-saving network units, includes: network monitoring means; network information memory; power-saving mode setting means; peripheral I/O interface; and digital processor. The network monitoring means monitors a topology of the network, or the interconnection relationship among the power-saving network units. Every time the network has been modified, the network monitoring means stores the modified network topology on the network information memory. The power-saving mode setting means receives the network information stored on the network information memory. If the power-saving network unit is a master or relay node in the network, then the power-saving mode setting means locks the peripheral I/O interface and digital processor of the power-saving network unit to the normal operation mode and prohibits these sections from entering the power-saving mode.
摘要:
First and second nodes are coupled together by a bus. The first node includes a detecting circuit for detecting the maximum data transfer capability of a connected node, at least two receiving circuits for receiving data from the bus, and a controlling circuit for selecting, based on an output signal from the detecting circuit and for optimizing the configuration of a receiving unit so as to bring the other of the receiving circuits to a stop. The second node includes a transmitting circuit for transmitting data to the bus and a notifying circuit for notifying the first node of its own maximum transfer capability.