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    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
    12.
    发明申请
    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
    磁性元件和磁记忆

    公开(公告)号：US20100244163A1

    公开(公告)日：2010-09-30

    申请号：US12716582

    申请日：2010-03-03

    申请人： Tadaomi Daibou ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Masatoshi Yoshikawa ,  Katsuya Nishiyama ,  Makoto Nagamine ,  Tatsuya Kishi ,  Hiroaki Yoda

    发明人： Tadaomi Daibou ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Masatoshi Yoshikawa ,  Katsuya Nishiyama ,  Makoto Nagamine ,  Tatsuya Kishi ,  Hiroaki Yoda

    IPC分类号： H01L43/08 ,  H01L27/115

    CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  H01L43/08 ,  H01L43/10

    摘要： A magnetoresistive element includes a stabilization layer, a nonmagnetic layer, a spin-polarization layer provided between the stabilization layer and the nonmagnetic layer, the spin-polarization layer having magnetic anisotropy in a perpendicular direction, and a magnetic layer provided on a side of the nonmagnetic layer opposite to a side on which the spin-polarization layer is provided. The stabilization layer has a lattice constant smaller than that of the spin-polarization layer in an in-plane direction. The spin-polarization layer contains at least one element selected from a group consisting of cobalt (Co) and iron (Fe), has a body-centered tetragonal (BCT) structure, and has a lattice constant ratio c/a of 1.10 (inclusive) to 1.35 (inclusive) when a perpendicular direction is a c-axis and an in-plane direction is an a-axis.

    摘要翻译： 磁阻元件包括稳定层，非磁性层，设置在稳定层和非磁性层之间的自旋极化层，垂直方向上具有磁各向异性的自旋极化层和设置在该磁性层的一侧的磁性层 非磁性层与设置有自旋极化层的一侧相反。 稳定层的面内方向的晶格常数小于自旋极化层的晶格常数。 自旋极化层含有选自钴（Co）和铁（Fe）中的至少一种元素，具有体心四方晶（BCT）结构，晶格常数比c / a为1.10（含 ）为1.35（含），当垂直方向为c轴且面内方向为a轴时。

    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
    13.
    发明申请
    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
    磁性元件和磁记忆

    公开(公告)号：US20090243008A1

    公开(公告)日：2009-10-01

    申请号：US12409716

    申请日：2009-03-24

    申请人： Eiji Kitagawa ,  Masatoshi Yoshikawa ,  Toshihiko Nagase ,  Tadaomi Daibou ,  Makoto Nagamine ,  Katsuya Nishiyama ,  Tatsuya Kishi ,  Hiroaki Yoda

    发明人： Eiji Kitagawa ,  Masatoshi Yoshikawa ,  Toshihiko Nagase ,  Tadaomi Daibou ,  Makoto Nagamine ,  Katsuya Nishiyama ,  Tatsuya Kishi ,  Hiroaki Yoda

    IPC分类号： H01L29/82

    CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L27/222

    摘要： A magnetoresistive element includes an underlying layer having a cubic or tetragonal crystal structure oriented in a (001) plane, a first magnetic layer provided on the underlying layer, having perpendicular magnetic anisotropy, and having an fct structure oriented in a (001) plane, a non-magnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the non-magnetic layer, and having perpendicular magnetic anisotropy. An in-plane lattice constant a1 of the underlying layer and an in-plane lattice constant a2 of the first magnetic layer satisfy the following equation in which b is a magnitude of Burgers vector of the first magnetic layer, ν is an elastic modulus of the first magnetic layer, and hc is a thickness of the first magnetic layer. |√{square root over (2)}a1/2−a2|/a2

    摘要翻译： 磁阻元件包括具有在（001）面取向的立方或四方晶体结构的下层，设置在下层上的第一磁性层，具有垂直的磁各向异性，并且具有在（001）面中取向的fct结构， 设置在第一磁性层上的非磁性层以及设置在非磁性层上的具有垂直磁各向异性的第二磁性层。 下层的面内晶格常数a1和第一磁性层的面内晶格常数a2满足以下等式，其中b是第一磁性层的汉堡矢量的大小，nu是第一磁性层的弹性模量 第一磁性层，hc是第一磁性层的厚度。 <？in-line-formula description =“In-line Formulas”end =“lead”？> |√{square root over（2）} a1 / 2-a2 | / a2

    Magnetoresistive element and magnetic memory
    14.
    发明授权
    Magnetoresistive element and magnetic memory 有权
    磁阻元件和磁记忆体

    公开(公告)号：US08218355B2

    公开(公告)日：2012-07-10

    申请号：US12409716

    申请日：2009-03-24

    申请人： Eiji Kitagawa ,  Masatoshi Yoshikawa ,  Toshihiko Nagase ,  Tadaomi Daibou ,  Makoto Nagamine ,  Katsuya Nishiyama ,  Tatsuya Kishi ,  Hiroaki Yoda

    发明人： Eiji Kitagawa ,  Masatoshi Yoshikawa ,  Toshihiko Nagase ,  Tadaomi Daibou ,  Makoto Nagamine ,  Katsuya Nishiyama ,  Tatsuya Kishi ,  Hiroaki Yoda

    IPC分类号： G11C11/14

    CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L27/222

    摘要： A magnetoresistive element includes an underlying layer having a cubic or tetragonal crystal structure oriented in a (001) plane, a first magnetic layer provided on the underlying layer, having perpendicular magnetic anisotropy, and having an fct structure oriented in a (001) plane, a non-magnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the non-magnetic layer, and having perpendicular magnetic anisotropy. An in-plane lattice constant a1 of the underlying layer and an in-plane lattice constant a2 of the first magnetic layer satisfy the following equation in which b is a magnitude of Burgers vector of the first magnetic layer, ν is an elastic modulus of the first magnetic layer, and hc is a thickness of the first magnetic layer. |√{square root over (2)}×a1/2−a2|/a2

    摘要翻译： 磁阻元件包括具有在（001）面取向的立方晶体或四方晶体结构的下层，设置在下层上的第一磁性层，具有垂直的磁各向异性，并且具有在（001）面中取向的fct结构， 设置在第一磁性层上的非磁性层以及设置在非磁性层上的具有垂直磁各向异性的第二磁性层。 下层的面内晶格常数a1和第一磁性层的面内晶格常数a2满足以下等式，其中b是第一磁性层的汉堡矢量的大小，ngr; 是第一磁性层的弹性模量，hc是第一磁性层的厚度。 |√{平方根超过（2）}×a1 / 2-a2 | / a2