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    Magnetoresistive effect element and magnetic memory
    1.
    发明授权
    Magnetoresistive effect element and magnetic memory 有权
    磁阻效应元件和磁存储器

    公开(公告)号：US08750029B2

    公开(公告)日：2014-06-10

    申请号：US13233420

    申请日：2011-09-15

    申请人： Eiji Kitagawa ,  Tadaomi Daibou ,  Tadashi Kai ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Hiroaki Yoda

    发明人： Eiji Kitagawa ,  Tadaomi Daibou ,  Tadashi Kai ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Hiroaki Yoda

    IPC分类号： G11C11/15 ,  H01L43/08

    CPC分类号： H01L27/228 ,  G11C11/161 ,  H01L43/08

    摘要： According to one embodiment, a magnetoresistive effect element includes a recording layer including ferromagnetic material with perpendicular magnetic anisotropy to a film surface and a variable orientation of magnetization, a reference layer including ferromagnetic material with perpendicular magnetic anisotropy to a film surface and an invariable orientation of magnetization, a nonmagnetic layer between the recording layer and the reference layer, a first underlayer on a side of the recoding layer opposite to a side on which the nonmagnetic layer is provided, and a second underlayer between the recording layer and the first underlayer. The second underlayer is a Pd film including a concentration of 3×1015 atms/cm2.

    摘要翻译： 根据一个实施例，磁阻效应元件包括记录层，其包括对膜表面具有垂直磁各向异性的铁磁材料和磁化的可变取向，包括具有垂直磁性各向异性的铁磁材料的参考层和膜表面的不变取向 磁化，记录层和参考层之间的非磁性层，与记录层和第一底层之间的第二底层与编码层的与设置非磁性层的一侧相反的一侧的第一底层。 第二底层是包含浓度为3×1015atms / cm 2的Pd膜。

    Magnetoresistive element and magnetic memory using the same
    2.
    发明授权
    Magnetoresistive element and magnetic memory using the same 有权
    磁阻元件和使用其的磁存储器

    公开(公告)号：US08670268B2

    公开(公告)日：2014-03-11

    申请号：US13427732

    申请日：2012-03-22

    申请人： Toshihiko Nagase ,  Eiji Kitagawa ,  Katsuya Nishiyama ,  Tadashi Kai ,  Koji Ueda ,  Daisuke Watanabe

    发明人： Toshihiko Nagase ,  Eiji Kitagawa ,  Katsuya Nishiyama ,  Tadashi Kai ,  Koji Ueda ,  Daisuke Watanabe

    IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C11/15 ,  H01L29/82

    CPC分类号： H01L43/08 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3272 ,  H01F10/3286 ,  H01L43/02 ,  H01L43/10

    摘要： According to one embodiment, a magnetoresistive element includes first and second magnetic layers and a first nonmagnetic layer. The first magnetic layer has an axis of easy magnetization perpendicular to a film plane, and a variable magnetization. The second magnetic layer has an axis of easy magnetization perpendicular to a film plane, and an invariable magnetization. The first nonmagnetic layer is provided between the first and second magnetic layers. The second magnetic layer includes third and fourth magnetic layers, and a second nonmagnetic layer formed between the third and fourth magnetic layers. The third magnetic layer is in contact with the first nonmagnetic layer and includes Co and at least one of Zr, Nb, Mo, Hf, Ta, and W.

    摘要翻译： 根据一个实施例，磁阻元件包括第一和第二磁性层和第一非磁性层。 第一磁性层具有垂直于膜平面的容易磁化的轴和可变磁化。 第二磁性层具有垂直于膜平面的容易磁化的轴和不变的磁化。 第一非磁性层设置在第一和第二磁性层之间。 第二磁性层包括第三和第四磁性层，以及形成在第三和第四磁性层之间的第二非磁性层。 第三磁性层与第一非磁性层接触，包括Co和Zr，Nb，Mo，Hf，Ta和W中的至少一种。

    Magnetoresistive device and magnetic random access memory
    4.
    发明授权
    Magnetoresistive device and magnetic random access memory 有权
    磁阻器件和磁性随机存取存储器

    公开(公告)号：US08169817B2

    公开(公告)日：2012-05-01

    申请号：US12715699

    申请日：2010-03-02

    申请人： Masahiko Nakayama ,  Hiroaki Yoda ,  Tadashi Kai ,  Hisanori Aikawa ,  Katsuya Nishiyama ,  Jyunichi Ozeki

    发明人： Masahiko Nakayama ,  Hiroaki Yoda ,  Tadashi Kai ,  Hisanori Aikawa ,  Katsuya Nishiyama ,  Jyunichi Ozeki

    IPC分类号： G11C11/00

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  G11C7/04 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/126 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H01F10/3295 ,  H01L43/10

    摘要： A magnetoresistive device includes: a magnetic recording layer including a first magnetic layer having perpendicular magnetic anisotropy, and a second magnetic layer having in-plane magnetic anisotropy and being exchange-coupled to the first magnetic layer, Curie temperature of the second magnetic layer being lower than Curie temperature of the first magnetic layer, and the magnetic recording layer having a magnetization direction perpendicular to a film plane; a magnetic reference layer having a magnetization direction which is perpendicular to a film plane and is invariable; and a nonmagnetic layer provided between the magnetic recording layer and the magnetic reference layer. The magnetization direction of the magnetic recording layer is changeable by spin-polarized electrons caused by flowing current between the magnetic recording layer and the magnetic reference layer in a direction perpendicular to the film plane.

    摘要翻译： 磁阻器件包括：包括具有垂直磁各向异性的第一磁性层的磁记录层和具有面内磁各向异性并与第一磁性层交换耦合的第二磁性层，第二磁性层的居里温度较低 第一磁性层的居里温度，磁化方向垂直于膜面的磁记录层; 具有垂直于膜平面的磁化方向且不变的磁参考层; 以及设置在磁记录层和磁参考层之间的非磁性层。 磁记录层的磁化方向可以由磁记录层和磁参考层之间的流动电流在垂直于膜平面的方向上引起的自旋极化电子改变。

    MAGNETORESISTIVE ELEMENT
    6.
    发明申请
    MAGNETORESISTIVE ELEMENT 有权
    磁电元件

    公开(公告)号：US20110116305A1

    公开(公告)日：2011-05-19

    申请号：US13013141

    申请日：2011-01-25

    申请人： Makoto NAGAMINE ,  Toshihiko Nagase ,  Sumio Ikegawa ,  Katsuya Nishiyama ,  Masatoshi Yoshikawa

    发明人： Makoto NAGAMINE ,  Toshihiko Nagase ,  Sumio Ikegawa ,  Katsuya Nishiyama ,  Masatoshi Yoshikawa

    IPC分类号： G11C11/15 ,  H01L29/82

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/224 ,  H01L27/228

    摘要： A magnetoresistive element includes a first magnetic layer which includes a first surface and a second surface and has a first standard electrode potential, a second magnetic layer, a barrier layer which is provided between the second magnetic layer and the first surface of the first magnetic layer, and a nonmagnetic cap layer which contacts the second surface of the first magnetic layer and is formed from an alloy of a first metal material and a second metal material, the first metal material having a second standard electrode potential lower than the first standard electrode potential, the second metal material having a third standard electrode potential higher than the first standard electrode potential.

    摘要翻译： 磁阻元件包括第一磁性层，其包括第一表面和第二表面，并且具有第一标准电极电位，第二磁性层，设置在第二磁性层和第一磁性层的第一表面之间的阻挡层 以及非磁性覆盖层，其与所述第一磁性层的第二表面接触并且由第一金属材料和第二金属材料的合金形成，所述第一金属材料具有低于所述第一标准电极电位的第二标准电极电位 所述第二金属材料具有比所述第一标准电极电位高的第三标准电极电位。

    MAGNETORESISTIVE ELEMENT
    7.
    发明申请
    MAGNETORESISTIVE ELEMENT 有权
    磁电元件

    公开(公告)号：US20090225587A1

    公开(公告)日：2009-09-10

    申请号：US12470786

    申请日：2009-05-22

    申请人： Makoto Nagamine ,  Toshihiko Nagase ,  Sumio Ikegawa ,  Katsuya Nishiyama ,  Masatoshi Yoshikawa

    发明人： Makoto Nagamine ,  Toshihiko Nagase ,  Sumio Ikegawa ,  Katsuya Nishiyama ,  Masatoshi Yoshikawa

    IPC分类号： G11C11/00

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/224 ,  H01L27/228

    摘要： A magnetoresistive element includes a first magnetic layer which includes a first surface and a second surface and has a first standard electrode potential, a second magnetic layer, a barrier layer which is provided between the second magnetic layer and the first surface of the first magnetic layer, and a nonmagnetic cap layer which contacts the second surface of the first magnetic layer and is formed from an alloy of a first metal material and a second metal material, the first metal material having a second standard electrode potential lower than the first standard electrode potential, the second metal material having a third standard electrode potential higher than the first standard electrode potential.

    摘要翻译： 磁阻元件包括第一磁性层，其包括第一表面和第二表面，并且具有第一标准电极电位，第二磁性层，设置在第二磁性层和第一磁性层的第一表面之间的阻挡层 以及非磁性覆盖层，其与所述第一磁性层的第二表面接触并且由第一金属材料和第二金属材料的合金形成，所述第一金属材料具有低于所述第一标准电极电位的第二标准电极电位 所述第二金属材料具有比所述第一标准电极电位高的第三标准电极电位。

    Magneto-resistance effect element, magnetic memory and magnetic head
    8.
    发明授权
    Magneto-resistance effect element, magnetic memory and magnetic head 有权
    磁阻效应元件，磁记忆体和磁头

    公开(公告)号：US07483291B2

    公开(公告)日：2009-01-27

    申请号：US11202318

    申请日：2005-08-12

    申请人： Yoshiaki Saito ,  Katsuya Nishiyama ,  Shigeki Takahashi

    发明人： Yoshiaki Saito ,  Katsuya Nishiyama ,  Shigeki Takahashi

    IPC分类号： G11C11/00

    CPC分类号： H01F10/3254 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/3272 ,  H01L27/224 ,  H01L27/228 ,  H01L43/08

    摘要： A magneto-resistance effect element includes: a first ferromagnetic layer serving as a magnetization fixed layer; a magnetization free layer including a second ferromagnetic layer provided on one side of the first ferromagnetic layer, a third ferromagnetic layer which is formed on an opposite side of the second ferromagnetic layer from the first ferromagnetic layer and has a film face having an area larger than that of the second ferromagnetic layer and whose magnetization direction is changeable by an external magnetic field, and an intermediate layer provided between the second ferromagnetic layer and the third ferromagnetic layer; and a tunnel baffler layer provided between the first ferromagnetic layer and the second ferromagnetic layer. The second ferromagnetic layer and the third ferromagnetic layer are magnetically coupled via the intermediate layer, and an aspect ratio of a plane shape of the third ferromagnetic layer is within a range from 1 to 2.

    摘要翻译： 磁阻效应元件包括：用作磁化固定层的第一铁磁层; 包含设置在第一铁磁层的一侧上的第二铁磁层的无磁化层，第三铁磁层，其形成在第二铁磁层与第一铁磁层相反的一侧上，并具有面积大于 第二铁磁层的磁化方向可由外部磁场变化，以及设置在第二铁磁层与第三铁磁层之间的中间层; 以及设置在所述第一铁磁层和所述第二铁磁层之间的隧道挡板层。 第二铁磁层和第三铁磁层经由中间层磁耦合，并且第三铁磁层的平面形状的纵横比在1至2的范围内。

    Magnetic memory
    10.
    发明授权
    Magnetic memory 失效

    公开(公告)号：US06831857B2

    公开(公告)日：2004-12-14

    申请号：US10329417

    申请日：2002-12-27

    申请人： Minoru Amano ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Tomomasa Ueda ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Yoshihisa Iwata

    发明人： Minoru Amano ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Tomomasa Ueda ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Yoshihisa Iwata

    IPC分类号： G11C1115

    CPC分类号： G11C11/15

    摘要： A highly reliable magnetic memory exhibits enhanced data-holding stability at high storage density in a storage layer of a magnetoresistive effect element used for memory cells. A magnetic memory includes a memory cell array having first wirings, second wirings intersecting the first wirings and memory cells each provided at an intersection area of the corresponding first and second wirings. Each memory cell is selected when the corresponding first and second wirings are selected. Each memory cell includes a magnetoresistive effect element having a storage layer in which data is stored by magnetic fields generated when current flows the selected first and second wirings, a first magnetic member, having two ends, provided as partially surrounding each first wiring and the two ends being situated in a direction of easy axis of magnetization, to form a closed-loop magnetic circuitry with the storage layer, and a second magnetic member, having two ends, provided as partially surrounding each second wiring and the two ends being situated in a direction of hard axis of magnetization, to amplify magnetic fields applied to the storage layer in the direction of hard axis of magnetization. Each end of the first magnetic member is situated as closer than each end of the second magnetic member to the storage layer.