公开(公告)号：US5324411A

公开(公告)日：1994-06-28

申请号：US946602

申请日：1992-09-18

申请人： Masahiko Ichishima ,  Yasumi Sasaki ,  Eiichi Toya ,  Masatoshi Kasahara ,  Ritsurou Makita

发明人： Masahiko Ichishima ,  Yasumi Sasaki ,  Eiichi Toya ,  Masatoshi Kasahara ,  Ritsurou Makita

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  H05H1/46

CPC分类号： H01J37/3244 ,  Y10S156/914

摘要： A disc-shaped electrode plate body is made of high-purity glassy carbon and has a large number of very-small-diameter through holes each of which has a plurality of spherical recesses in its internal wall surface.

摘要翻译： 盘状电极板体由高纯度玻璃碳制成，并且具有大量非常小直径的通孔，每个通孔在其内壁表面具有多个球形凹槽。

公开(公告)号：US5076902A

公开(公告)日：1991-12-31

申请号：US291592

申请日：1988-12-29

申请人： Nobuyuki Joshima ,  Yasumi Sasaki ,  Shigeru Abe

发明人： Nobuyuki Joshima ,  Yasumi Sasaki ,  Shigeru Abe

IPC分类号： C03B32/00 ,  C03C23/00 ,  C30B35/00

CPC分类号： C30B35/002 ,  C03B32/00 ,  C03C23/009

摘要： An electrolysis apparatus has a furnace for setting a silica glass component such as a process tube or crucible, a heater for heating the component, a sensor for measuring a temperature of an inside portion of the furnace, an anode and an cathode for applying a voltage across the component so as to electrolyze the component, a tube for holding the anode, a device for supplying an inert gas into a space between the anode and the holding tube, and a DC power source connected to the anode and the cathode.

摘要翻译： 电解装置具有用于设置诸如处理管或坩埚的二氧化硅玻璃部件的炉，用于加热部件的加热器，用于测量炉内部温度的传感器，用于施加电压的阳极和阴极 横跨该部件以电解部件，用于保持阳极的管，用于将惰性气体供应到阳极和保持管之间的空间的装置，以及连接到阳极和阴极的直流电源。

公开(公告)号：US20080173429A1

公开(公告)日：2008-07-24

申请号：US11850230

申请日：2007-09-05

申请人： Yasumi Sasaki ,  Yasuyuki Ooi

发明人： Yasumi Sasaki ,  Yasuyuki Ooi

IPC分类号： F28D15/00

CPC分类号： F28D15/046 ,  F28D15/0241 ,  H01L23/427 ,  H01L2924/0002 ,  H01L2924/00

摘要： A thin sheet type heat pipe is disclosed. The heat pipe may include a hermetically sealed container that is formed of foil sheets opposed and jointed at peripheral portions. The heat pipe may further include at least one spacer including a sheet having a fluid path and exerting a capillary force, which is movably housed in the container without bonding between the spacer and the container for maintaining flexibility to allow the container to be bent smoothly. The heat pipe may also include a working fluid enclosed in the container.

摘要翻译： 公开了一种薄片式热管。 热管可以包括密封容器，该容器由在周边部分相对和接合的箔片形成。 热管可以进一步包括至少一个间隔件，其包括具有流体路径并施加毛细作用力的片材，该片材可移动地容纳在容器中，而不会在间隔件和容器之间粘合，以保持柔性以允许容器平滑地弯曲。 热管还可以包括封装在容器中的工作流体。

公开(公告)号：US6071343A

公开(公告)日：2000-06-06

申请号：US743791

申请日：1996-11-05

申请人： Takeshi Inaba ,  Shuichi Takeda ,  Shigeo Kato ,  Yasumi Sasaki ,  Yukio Ito ,  Masanori Sato

发明人： Takeshi Inaba ,  Shuichi Takeda ,  Shigeo Kato ,  Yasumi Sasaki ,  Yukio Ito ,  Masanori Sato

IPC分类号： C04B41/50 ,  C04B41/87 ,  C23C16/02 ,  C23C16/32 ,  C04B35/36

CPC分类号： C04B41/009 ,  C04B41/5059 ,  C04B41/87 ,  C23C16/0272 ,  C23C16/325

摘要： A heat treatment jig with a silicon carbide coating for production of a semiconductor includes a base material and a silicon carbide film formed on the surface of the base material by a CVD method. The silicon carbide film is formed from a plurality of layers substantially parallel to the surface of the base material, and at least one of the layers is formed as a nucleus formation layer while the other layers are formed as ordinary crystal layers so that crystal growth between the ordinary crystal layers across the nucleus formation layer is discontinuous while crystal growth of the silicon carbide in the ordinary crystal layers are continuous in a direction of thickness of the ordinary crystal layers.

摘要翻译： 具有用于制造半导体的碳化硅涂层的热处理夹具包括通过CVD法在基材的表面上形成的基材和碳化硅膜。 碳化硅膜由基本上平行于基材的表面的多个层形成，并且至少一个层形成为核形成层，而另外的层被形成为普通的晶体层，使得第二层之间的晶体生长在 在核形成层上的普通晶体层是不连续的，而在普通晶体层中的碳化硅的晶体生长在普通晶体层的厚度方向上是连续的。

公开(公告)号：US5200157A

公开(公告)日：1993-04-06

申请号：US668329

申请日：1991-03-14

申请人： Eiichi Toya ,  Masayuki Ohkawa ,  Kazuo Itoh ,  Yasumi Sasaki

发明人： Eiichi Toya ,  Masayuki Ohkawa ,  Kazuo Itoh ,  Yasumi Sasaki

IPC分类号： C30B25/12

CPC分类号： C30B25/12

摘要： The susceptor according to the present invention comprises a main body in the shape of a trapezoidal plate, and which has three circular depressions formed in its surface. The main body is made of silicon carbide having a bulk density of 3.00 g/cm.sup.3 or more. At least 70% of the surface region of the main body is made of crystal particles having a diameter of 5 .mu.m or more. The main body has a thickness of, for example, 700 .mu.m. Six susceptors are attached to a hexagonal upper plate which is fastened to a shaft, and also to a hexagonal lower plate, thereby forming a barrel. Silicon wafers are placed in the circular depressions, so that single-crystal layers may be epitaxially formed on the wafers.

摘要翻译： 根据本发明的感受体包括呈梯形板形状的主体，并且在其表面上形成有三个圆形凹陷。 主体由堆积密度为3.00g / cm 3以上的碳化硅构成。 主体的表面区域的至少70％由直径为5μm以上的结晶粒子构成。 主体的厚度例如为700μm。 六个感受体连接到六角形上板，该六角形上板被固定到轴上，并且还连接到六边形下板，从而形成筒。 将硅晶片放置在圆形凹陷中，使得可以在晶片上外延形成单晶层。

公开(公告)号：US5074017A

公开(公告)日：1991-12-24

申请号：US454782

申请日：1989-12-26

申请人： Eiichi Toya ,  Yukio Itoh ,  Tadashi Ohashi ,  Masayuki Sumiya ,  Yasumi Sasaki

发明人： Eiichi Toya ,  Yukio Itoh ,  Tadashi Ohashi ,  Masayuki Sumiya ,  Yasumi Sasaki

IPC分类号： C30B25/12 ,  C23C16/44 ,  C23C16/458 ,  H01L21/205 ,  H01L21/31

CPC分类号： C23C16/4584 ,  Y10T29/41

摘要： A susceptor for use in a vertical vapor growth apparatus includes a susceptor body (12) having an upper surface, a plurality of wafer receiving portions (17) formed in the upper surface of the susceptor body (12), and plates (16) fixed in the upper surface of the susceptor body (12) near the wafer setting portions (17). The plates (16) have an upper surface such that, when wafers (5) are mounted in the wafer setting portions (17), the upper surfaces of the plates (16) and the wafers (5) are positioned substantially in the same plane. The plates (16) are made of quartz glass or fused silica.

摘要翻译： 用于垂直气相生长装置的基座包括具有上表面的基座体（12），形成在基座体（12）的上表面中的多个晶片接收部分（17），以及固定 在靠近晶片设置部分（17）的基座主体（12）的上表面中。 板（16）具有上表面，使得当晶片（5）安装在晶片设置部分（17）中时，板（16）和晶片（5）的上表面基本上位于同一平面 。 板（16）由石英玻璃或熔融石英制成。