摘要:
A susceptor for use in a vertical vapor growth apparatus includes a susceptor body (12) having an upper surface, a plurality of wafer receiving portions (17) formed in the upper surface of the susceptor body (12), and plates (16) fixed in the upper surface of the susceptor body (12) near the wafer setting portions (17). The plates (16) have an upper surface such that, when wafers (5) are mounted in the wafer setting portions (17), the upper surfaces of the plates (16) and the wafers (5) are positioned substantially in the same plane. The plates (16) are made of quartz glass or fused silica.
摘要:
A ceramic membrane device for a photomask is a ring-shaped base plate constituting a circumferential frame and having a flat front surface, an outer side surface and a rear surface, a front CVD coating supported on the front surface of the base plate and defining a flat surface on which a masking pattern is to be formed, and a rear CVD coating formed on the rear surface of the base plate. The front and rear CVD coatings are made of a silicon compound. The ceramic membrane device is made by providing a plate having a flat front surface, a side surface and a rear surface, forming a front CVD coating made of a silicon compound on the side surface and the front surface of the plate, forming a rear CVD coating made of a silicon compound on a partial area of the rear surface of the plate so that an uncoated area remains, removing the portion of the plate corresponding to the uncoated area by means of etching so that the remaining portion of the plate can function as a circumferential frame for the ceramic membrane formed by the front coating.
摘要:
A ceramic device is disclosed that has a silicon base plate, a first ceramic film formed on a first surface of the silicon base plate, a second ceramic film formed on a second surface of the silicon base plate opposite to the first surface, and an operation opening formed in the silicon base plate between the first and second surfaces. A surface portion of the first ceramic film exposed to the operation opening Is a mirror surface having 0.05 micrometers or less of center line average height Ra. A mirror surface keeping film can be formed between the first surface of the silicon base plate and the first ceramic film for keeping a mirror surface in an etching step to etch the silicon base plate, and the silicon base plate can be reduced partially in the etching step for forming an operation opening thereby exposing a corresponding portion of the mirror surface keeping film to the operation opening.
摘要:
The susceptor according to the present invention comprises a main body in the shape of a trapezoidal plate, and which has three circular depressions formed in its surface. The main body is made of silicon carbide having a bulk density of 3.00 g/cm.sup.3 or more. At least 70% of the surface region of the main body is made of crystal particles having a diameter of 5 .mu.m or more. The main body has a thickness of, for example, 700 .mu.m. Six susceptors are attached to a hexagonal upper plate which is fastened to a shaft, and also to a hexagonal lower plate, thereby forming a barrel. Silicon wafers are placed in the circular depressions, so that single-crystal layers may be epitaxially formed on the wafers.
摘要翻译:根据本发明的感受体包括呈梯形板形状的主体,并且在其表面上形成有三个圆形凹陷。 主体由堆积密度为3.00g / cm 3以上的碳化硅构成。 主体的表面区域的至少70%由直径为5μm以上的结晶粒子构成。 主体的厚度例如为700μm。 六个感受体连接到六角形上板,该六角形上板被固定到轴上,并且还连接到六边形下板,从而形成筒。 将硅晶片放置在圆形凹陷中,使得可以在晶片上外延形成单晶层。
摘要:
End members are located at the top and the bottom of a vertical heat treatment device. A plurality of support members are vertically mounted on the end members. A plurality of wafer hold members are fixed on the support members in a parallel manner, each of which is formed in an approximately circular arc shape. The wafer hold member is made of SiC by a CVD method or Si3N4 by a CVD method. The wafer hold member has a plate portion on which a wafer is to be placed and a reinforce portion connected to the plate portion. The plate portion is 100-1000 microns in thickness.
摘要翻译:端部件位于垂直热处理装置的顶部和底部。 多个支撑构件垂直地安装在端部构件上。 多个晶片保持构件以平行方式固定在支撑构件上,每个晶片保持构件形成为大致圆弧形状。 晶片保持构件通过CVD法由SiC或Si 3 N 4通过CVD法制成。 晶片保持构件具有其上要放置晶片的板部分和连接到板部分的加强部分。 板部的厚度为100-1000微米。
摘要:
A disc-shaped electrode plate body is made of high-purity glassy carbon and has a large number of very-small-diameter through holes each of which has a plurality of spherical recesses in its internal wall surface.
摘要:
A vapor phase growth unit for vapor phase growing on the surface of a wafer under a heated condition, which supports the wafer with a wafer supporter within a reaction chamber and has a heater under the wafer supported by said wafer supporter, wherein a reflection plate for reflecting at least downward heat from said heater is provided, an insulation cylinder is provided surrounding the side periphery of the heater, and the reflection plate consists of vitreous carbon.
摘要:
A carbon wire heating element sealing heater is provided. Therein, a carbon wire heating element using carbon fibers is sealed in a quartz glass member, wherein absorption water quantity of the carbon wire heating element is 2×10−3 g/cm3 or less.
摘要翻译:提供碳丝加热元件密封加热器。 其中,使用碳纤维的碳丝加热元件密封在石英玻璃构件中,其中碳线加热元件的吸收水量为2×10 -3 / cm 3 或更少。
摘要:
A rod-shaped heater provided is composed of a carbon wire heating element 2 sealed in a small or large diameter quartz glass tube, a small diameter quartz glass tube portions 3a and 3b charged with compressed wire carbon members at opposite ends thereof; a sealed terminal section 10 having connection lines 11a and 11b for power supply held between the compressed wire carbon members charged in the small diameter quartz glass tube. The connection lines and the carbon wire heating element are electrically connected by way of the wire carbon members. This rod-shaped heater using the carbon wire heating element is suitable for readily raising the temperature of the agent in the storage tank of the wet etching agent or the grinding agent.
摘要:
A carbon wire heating element sealing heater is provided. Therein, a carbon wire heating element using carbon fibers is sealed in a quartz glass member, wherein absorption water quantity of the carbon wire heating element is 2×10−3 g/cm3 or less.
摘要翻译:提供碳丝加热元件密封加热器。 其中,使用碳纤维的碳丝加热元件密封在石英玻璃构件中,其中碳线加热元件的吸收水量为2×10 -3 / cm 3 或更少。