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68 条记录 (耗时 0.038 秒)

    Antireflection layer system with integral UV blocking properties
    11.
    发明授权
    Antireflection layer system with integral UV blocking properties 失效
    具有整体UV阻隔性能的防反射层系统

    公开(公告)号：US5332618A

    公开(公告)日：1994-07-26

    申请号：US832790

    申请日：1992-02-07

    申请人： R. Russel Austin

    发明人： R. Russel Austin

    IPC分类号： G02B1/11 ,  G02B5/28 ,  G02B5/22

    CPC分类号： G02B5/283 ,  G02B1/115 ,  Y10S428/913 ,  Y10T428/24942 ,  Y10T428/24975 ,  Y10T428/265

    摘要： The present invention is directed to an anti-reflection and UV rejection coating. The coating comprises at least eight layers wherein adjoining layers alternate between high and low refractive index materials. The layer adjacent an article on which the coating is formed has a high refractive index greater than about 2.10 at a wavelength of about 520 nanometers and greater than about 2.50 at a wavelength of about 330 nanometers. The index of refraction of the low refractive index material is less than about 1.50 at a wavelength of about 520 nanometers. The two layers of low refractive index material nearest the article each have an optical thickness at a wavelength of about 330 nm of about one-quarter wavelength.

    摘要翻译： 本发明涉及防反射和防紫外线涂层。 该涂层包括至少八层，其中相邻层在高折射率材料和低折射率材料之间交替。 在其上形成有涂层的制品相邻的层在约330纳米的波长处具有大约约2.10的高折射率，约为520纳米，大约为2.50。 在约520纳米的波长处，低折射率材料的折射率小于约1.50。 最接近制品的两层低折射率材料各自具有大约四分之一波长的约330nm波长的光学厚度。

    Multilayer anti-reflection coating using zinc oxide to provide ultraviolet blocking
    12.
    发明授权
    Multilayer anti-reflection coating using zinc oxide to provide ultraviolet blocking 失效
    多层抗反射涂层采用氧化锌提供紫外线阻挡

    公开(公告)号：US5147125A

    公开(公告)日：1992-09-15

    申请号：US398136

    申请日：1989-08-24

    申请人： R. Russel Austin

    发明人： R. Russel Austin

    IPC分类号： C03C17/34 ,  G02B1/11

    CPC分类号： C03C17/3417 ,  C03C17/3452 ,  G02B1/115

    摘要： A multilayer, thin-film, broad-band, anti-reflection structure applicable to transparent substrates. The present invention makes use of the UV absorption properties of zinc oxide to provide UV rejection for wavelengths shorter than 380 nm, while providing anti-reflection properties in the visible region of the spectrum. The structure provides a reflection value less than 0.25% in the visible region of the spectrum, and blocks 99 percent of UV radiation below 380 nm.

    摘要翻译： 适用于透明基板的多层，薄膜，宽带，抗反射结构。 本发明利用氧化锌的紫外线吸收特性，为波长短于380nm的紫外线抑制，同时在光谱可见光区域提供抗反射性能。 该结构在光谱的可见光区域提供小于0.25％的反射值，并阻止低于380nm的99％的紫外线辐射。

    InGaN diode-laser pumped II-VI semiconductor lasers
    18.
    发明授权
    InGaN diode-laser pumped II-VI semiconductor lasers 有权
    InGaN二极管激光泵浦II-VI半导体激光器

    公开(公告)号：US07136408B2

    公开(公告)日：2006-11-14

    申请号：US10866907

    申请日：2004-06-14

    申请人： Luis A. Spinelli ,  Hailong Zhou ,  R. Russel Austin

    发明人： Luis A. Spinelli ,  Hailong Zhou ,  R. Russel Austin

    IPC分类号： H01S3/091

    CPC分类号： B82Y20/00 ,  H01S3/094057 ,  H01S3/0941 ,  H01S5/005 ,  H01S5/041 ,  H01S5/141 ,  H01S5/183 ,  H01S5/34333 ,  H01S5/347 ,  H01S5/4025

    摘要： A semiconductor laser includes a multilayer semiconductor laser heterostructure including at least one active layer of a II-VI semiconductor material and is optically pumped by one or more indium gallium nitride (InGaN) diode-lasers. Group II elements in the II-VI semiconductor material are zinc, cadmium, magnesium, beryllium, strontium, and barium. Group VI elements in the II-VI semiconductor material are Sulfur, Selenium, and Tellurium. In one example of the laser an edge emitting heterostructure includes two active layers of zinc cadmium selenide, two waveguide layers of zinc magnesium sulfoselenide, and two cladding layers, also of zinc magnesium sulfoselenide. Proportions of elements in the cladding layer material and the waveguide layer material are selected such that the waveguide layer material has a higher bandgap than the material of the waveguide layers. In another example, a two dimensional array of InGaN diode-lasers is arranged to optically pump a one dimensional array of II-VI edge-emitting heterostructure lasers.

    摘要翻译： 半导体激光器包括包含至少一个II-VI半导体材料的有源层的多层半导体激光异质结构，并被一个或多个铟镓氮（InGaN）二极管激光器光泵浦。 II-VI族半导体材料中的II族元素是锌，镉，镁，铍，锶和钡。 II-VI族半导体材料中的VI族元素是硫，硒和碲。 在激光器的一个实例中，边缘发射异质结构包括两个硒化锌镉活性层，两个磺酸锌镁纳米波导层和两个包层，也是锌硫酸镁镁。 选择包层材料和波导层材料中的元素的比例使得波导层材料具有比波导层的材料更高的带隙。 在另一个示例中，布置InGaN二极管激光器的二维阵列以光学泵浦II-VI边缘发射异质结构激光器的一维阵列。

    Group-delay-dispersive multilayer-mirror structures and method for designing same
    19.
    发明授权
    Group-delay-dispersive multilayer-mirror structures and method for designing same 有权
    群延迟分散多层镜结构及其设计方法

    公开(公告)号：US06222673B1

    公开(公告)日：2001-04-24

    申请号：US09135972

    申请日：1998-08-18

    申请人： R. Russel Austin ,  R. Ian Edmond

    发明人： R. Russel Austin ,  R. Ian Edmond

    IPC分类号： G02B110

    CPC分类号： G02B5/0883 ,  G02B5/0858

    摘要： Negative Group-delay-dispersion mirror (NGDD-mirror) multilayer structures include a generally-orderly arrangement of layers or groups of layers in which the function of certain individual layers or groups of layers can be recognized and defined. The structures are broadly definable as a rear group of layers which are primarily responsible for providing a desired reflection level and reflection bandwidth together with a low and smoothly varying reflection phase-dispersion, and a front group of layers which are primarily responsible for producing high reflection phase-dispersion necessary for providing a desired NGDD level and bandwidth. The front group of layers relies on multiple resonant trapping mechanisms such as two or more effective resonant-cavities, employing one or more sub-quarter-wave layers to shape the phase-dispersion for providing a substantially-constant NGDD. In certain embodiments of the structures, a base layer or substrate of a highly-reflective metal can be used to reduce the number of dielectric layers needed to provide high reflectivity.

    摘要翻译： 负组延迟分散反射镜（NGDD-mirror）多层结构包括层或层组的一般有序布置，其中可以识别和限定某些单个层或多组层的功能。 这些结构可以广泛地定义为后面的层组，其主要负责提供期望的反射水平和反射带宽以及低和平滑变化的反射相位分散以及主要负责产生高反射的前面的层组 提供所需的NGDD级别和带宽所需的相位色散。 前组的层依赖于多个谐振捕获机构，例如两个或更多个有效的谐振腔，采用一个或多个亚四分之一波长的层来形成相位分散以提供基本上恒定的NGDD。 在结构的某些实施例中，可以使用高反射金属的基底层或衬底来减少提供高反射率所需的电介质层的数量。