公开(公告)号：US20220254405A1

公开(公告)日：2022-08-11

申请号：US17697483

申请日：2022-03-17

Applicant: Micron Technology, Inc.

Inventor： Tae H. Kim ,  Brenton P. Van Leeuwen

IPC: G11C11/408 ,  G11C11/22

Abstract: Methods, systems, and devices for driving word lines using sub word line drivers are described. A memory array may include a plurality of sub-arrays arranged with gaps in between. Word lines may be arranged across multiple sub-arrays and drive access transistors that are used to selectively access rows (e.g., rows of memory cells) within the sub-arrays. In some examples, signals applied to selection devices driving the word lines may be over-driven for a duration at or near the desired transitions of the word line, and some signals may be driven to a relatively high level for a duration around the high and low transitions of a global row line. Whether a signal is over driven or driven to a relatively high level may depend on the type or types of transistors used in each word line driver.

公开(公告)号：US11704255B2

公开(公告)日：2023-07-18

申请号：US17530461

申请日：2021-11-19

Applicant: Micron Technology, Inc.

Inventor： Nathaniel J. Meier ,  Brenton P. Van Leeuwen

IPC: G06F12/14 ,  G06F3/06 ,  G06F21/62 ,  H04L9/32 ,  G11C11/4074 ,  G11C17/16 ,  G06F21/79

CPC classification number: G06F12/1433 ,  G06F12/1466 ,  G06F21/79 ,  G11C11/4074 ,  G11C17/16 ,  G06F3/0622 ,  G06F3/0637 ,  G06F12/14 ,  G06F12/1458 ,  G06F2212/1052

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which security measures may be implemented to control access to a fuse array (or other secure features) of the memory devices based on a secure access key. In some cases, a customer may define and store a user-defined access key in the fuse array. In other cases, a manufacturer of the memory device may define a manufacturer-defined access key (e.g., an access key based on fuse identification (FID), a secret access key), where a host device coupled with the memory device may obtain the manufacturer-defined access key according to certain protocols. The memory device may compare an access key included in a command directed to the memory device with either the user-defined access key or the manufacturer-defined access key to determine whether to permit or prohibit execution of the command based on the comparison.

公开(公告)号：US20230073070A1

公开(公告)日：2023-03-09

申请号：US17982403

申请日：2022-11-07

Applicant: Micron Technology, Inc.

Inventor： Nathaniel J. Meier ,  Brenton P. Van Leeuwen

IPC: G06F21/79

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which self-lock security may be implemented to control access to a fuse array (or other secure features) of the memory devices based on a predefined event associated with the memory device operation. The predefined event may include an operating parameter of the memory device, one or more commands directed to the memory device, or both. The memory device may monitor the predefined event and determine that the predefined event satisfies a threshold. The threshold may be related to a time elapsed since the predefined event has occurred or a certain pattern in the one or more commands. Subsequently, the memory device may disable a circuit configured to access the fuse array based on the determination such that an access to the fuse array is no longer allowed.

公开(公告)号：US11302381B1

公开(公告)日：2022-04-12

申请号：US17170743

申请日：2021-02-08

Applicant: Micron Technology, Inc.

Inventor： Tae H. Kim ,  Brenton P. Van Leeuwen

IPC: G11C11/408 ,  G11C11/22

Abstract: Methods, systems, and devices for driving word lines using sub word line drivers are described. A memory array may include a plurality of sub-arrays arranged with gaps in between. Word lines may be arranged across multiple sub-arrays and drive access transistors that are used to selectively access rows (e.g., rows of memory cells) within the sub-arrays. In some examples, signals applied to selection devices driving the word lines may be over-driven for a duration at or near the desired transitions of the word line, and some signals may be driven to a relatively high level for a duration around the high and low transitions of a global row line. Whether a signal is over driven or driven to a relatively high level may depend on the type or types of transistors used in each word line driver.

公开(公告)号：US20220012374A1

公开(公告)日：2022-01-13

申请号：US17482821

申请日：2021-09-23

Applicant: Micron Technology, Inc.

Inventor： Brenton P. Van Leeuwen ,  Nathaniel J. Meier

IPC: G06F21/79 ,  H04L9/06 ,  G06F21/81

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which security measures may be implemented to control access to a fuse array (or other secure features) of the memory devices based on a secure access key. In some cases, a customer may define and store a user-defined access key in the fuse array. In other cases, a manufacturer of the memory device may define a manufacturer-defined access key (e.g., an access key based on fuse identification (FID), a secret access key), where a host device coupled with the memory device may obtain the manufacturer-defined access key according to certain protocols. The memory device may compare an access key included in a command directed to the memory device with either the user-defined access key or the manufacturer-defined access key to determine whether to permit or prohibit execution of the command based on the comparison.

公开(公告)号：US20210141944A1

公开(公告)日：2021-05-13

申请号：US16677486

申请日：2019-11-07

Applicant: Micron Technology, Inc.

Inventor： Nathaniel J. Meier ,  Brenton P. Van Leeuwen

IPC: G06F21/79

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which self-lock security may be implemented to control access to a fuse array (or other secure features) of the memory devices based on a predefined event associated with the memory device operation. The predefined event may include an operating parameter of the memory device, one or more commands directed to the memory device, or both. The memory device may monitor the predefined event and determine that the predefined event satisfies a threshold. The threshold may be related to a time elapsed since the predefined event has occurred or a certain pattern in the one or more commands. Subsequently, the memory device may disable a circuit configured to access the fuse array based on the determination such that an access to the fuse array is no longer allowed.

公开(公告)号：US20210141744A1

公开(公告)日：2021-05-13

申请号：US16677376

申请日：2019-11-07

Applicant: Micron Technology, Inc.

Inventor： Brenton P. Van Leeuwen ,  Nathaniel J. Meier

IPC: G06F12/14 ,  G11C17/16

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which security measures may be implemented to control access to a fuse array (or other secure features) of the memory devices based on a secure access key. In some cases, a customer may define and store a user-defined access key in the fuse array. In other cases, a manufacturer of the memory device may define a manufacturer-defined access key (e.g., an access key based on fuse identification (FID), a secret access key), where a host device coupled with the memory device may obtain the manufacturer-defined access key according to certain protocols. The memory device may compare an access key included in a command directed to the memory device with either the user-defined access key or the manufacturer-defined access key to determine whether to permit or prohibit execution of the command based on the comparison.

公开(公告)号：US10884951B2

公开(公告)日：2021-01-05

申请号：US16204656

申请日：2018-11-29

Applicant: Micron Technology, Inc.

Inventor： Shea M. Morrison ,  Brenton P. Van Leeuwen ,  Blakely N. Frechette

IPC: G06F12/14 ,  G06F21/55 ,  G11C5/14 ,  G11C16/22

Abstract: Apparatuses and methods related to memory disablement for memory security. Disabling the memory for memory security can include, responsive to receiving a trigger signal, provide a voltage, which may be in excess of an operating or nominal voltage, to the access circuitry. The voltage may thus be sufficient to render the access circuitry inoperable for accessing data stored in the memory array.

公开(公告)号：US12216806B2

公开(公告)日：2025-02-04

申请号：US17982403

申请日：2022-11-07

Applicant: Micron Technology, Inc.

Inventor： Nathaniel J. Meier ,  Brenton P. Van Leeuwen

IPC: G06F21/79

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which self-lock security may be implemented to control access to a fuse array (or other secure features) of the memory devices based on a predefined event associated with the memory device operation. The predefined event may include an operating parameter of the memory device, one or more commands directed to the memory device, or both. The memory device may monitor the predefined event and determine that the predefined event satisfies a threshold. The threshold may be related to a time elapsed since the predefined event has occurred or a certain pattern in the one or more commands. Subsequently, the memory device may disable a circuit configured to access the fuse array based on the determination such that an access to the fuse array is no longer allowed.

公开(公告)号：US11644981B2

公开(公告)日：2023-05-09

申请号：US17032542

申请日：2020-09-25

Applicant: Micron Technology, Inc.

Inventor： Nathaniel J. Meier ,  Brenton P. Van Leeuwen

IPC: G06F21/78 ,  G06F21/71 ,  G06F3/06 ,  G06F21/82

CPC classification number: G06F3/0622 ,  G06F3/0653 ,  G06F3/0679 ,  G06F21/78

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which security locks are implemented to control access to secure functions of the memory devices. In one embodiment, the memory device detects a predetermined signal directed to the memory device. The predetermined signals may include one or more commands directed to the memory device, an operating parameter of the memory device, or both. The memory device may track instances of the predetermined signals to compare with a threshold stored in the memory device. If the memory device determines that the predetermined signals satisfy the threshold, the memory device prohibits access to the secure functions.